TM9435BGN [VBSEMI]
P-Channel 30-V (D-S) MOSFET;
| 型号： | TM9435BGN |
| 厂家： | 
VBsemi Electronics Co.,Ltd |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：1687K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM9435BFS
www.VBsemi.tw
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 5.8
- 5.0
- 4.4
Definition
0.042 at VGS = - 10 V
0.055 at VGS = - 6 V
0.060 at VGS = - 4.5 V
•
•
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
- 30
S
SO-8
G
S
S
D
D
1
2
3
4
8
7
6
5
S
D
D
G
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 30
V
VGS
± 20
TA = 25 °C
TA = 70 °C
- 5.8
- 4.6
- 4.1
- 3.2
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
- 30
Continuous Source Current (Diode Conduction)a
- 2.3
2.5
- 1.1
1.3
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
1.6
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
40
Maximum
Unit
t ≤ 10 s
50
95
30
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
70
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
24
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
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SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
Gate Threshold Voltage
- 0.7
- 2.0
± 100
- 1
V
Gate-Body Leakage
nA
VDS = - 30 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
VDS ≤ - 10 V, VGS = - 10 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 10 V, ID = - 5.8 A
- 5
- 20
- 5
ID(on)
0.033
0.043
0.056
13
0.042
0.055
0.060
Drain-Source On-State Resistanceb
RDS(on)
VGS = - 6 V, ID = - 5 A
Ω
VGS = - 4.5 V, ID = - 4.4 A
VDS = - 15 V, ID = - 5.8 A
IS = - 2.3 A, VGS = 0 V
Forward Transconductanceb
Diode Forward Voltageb
gfs
S
V
VSD
- 0.8
- 1.1
24
Dynamica
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
16
2.3
4.5
8.8
14
14
42
30
30
VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A
nC
Ω
td(on)
tr
td(off)
tf
25
25
70
50
60
V
DD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
ns
trr
IF = - 1.2 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
30
V
GS
= 10 V thru 6 V
5 V
25
20
15
10
5
4 V
T
= 125 °C
C
25 °C
2
3 V
- 55 °C
0
0
0
0
1
3
4
5
1
2
3
4
5
oltage (V)
- Gate-to-Source V
V
V
- Drain-to-Source Voltage (V)
GS
DS
Transfer Characteristics
Output Characteristics
1100
880
660
440
220
0
0.15
0.12
0.09
0.06
0.03
C
iss
V
GS
= 4.5 V
V
= 6 V
GS
C
oss
V
GS
= 10 V
16
C
rss
0.00
0
0
5
10
15
20
25
30
4
8
12
20
V
- Drain-to-Source Voltage (V)
DS
I
- Drain Current (A)
D
Capacitance
On-Resistance vs. Drain Current
1.6
1.4
1.2
1.0
0.8
0.6
10
V
= 10 V
= 5.7 A
GS
V
= 15 V
= 3.5 A
DS
I
D
I
D
8
6
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0.0
3.2
6.4
9.6
12.8
16.0
T
- Junction Temperature (°C)
J
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
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TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.20
0.16
0.12
0.08
0.04
0.00
50
I
D
= 5.8 A
T
= 25 °C
J
T
= 150 °C
J
10
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
0.4
150
120
90
I
D
= 250 µA
0.2
0.0
60
30
0
- 0.2
- 0.4
-3
-2
10
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25 °C
C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Foot
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TM9435BFS
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
-2
10
-1
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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TM9435BFS
www.VBsemi.tw
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
0.004"
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
E-mail：China@VBsemi TEL:86-755-83251052
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TM9435BFS
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