WNM2020-3TR [VBSEMI]
N-Channel 20 V (D-S) MOSFET;型号: | WNM2020-3TR |
厂家: | VBsemi Electronics Co.,Ltd |
描述: | N-Channel 20 V (D-S) MOSFET |
文件: | 总9页 (文件大小:1051K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WNM2020-3/TR
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N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
ID (A)e
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
6a
0.028 at VGS = 4.5 V
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
•
•
6a
20
8.8 nC
• Compliant to RoHS Directive 2002/95/EC
5.6
APPLICATIONS
•
DC/DC Converters
•
Load Switch for Portable Applications
SOT-23
G
S
1
2
3
D
Top View
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
12
6a
TC = 25 °C
T
C = 70 °C
A = 25 °C
5.1
Continuous Drain Current (TJ = 150 °C)
ID
5b, c
4b, c
20
T
A
TA = 70 °C
Pulsed Drain Current
IDM
IS
TC = 25 °C
1.75
1.04b, c
Continuous Source-Drain Diode Current
T
A = 25 °C
TC = 25 °C
TC = 70 °C
2.1
1.3
1.25b, c
Maximum Power Dissipation
PD
W
TA = 25 °C
0.8b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
80
Maximum
100
Unit
Maximum Junction-to-Ambientb, d
t ≤ 5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
40
60
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Based on TC = 25 °C.
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SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
20
V
V
DS Temperature Coefficient
25
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.6
VDS = VGS , ID = 250 µA
V
0.45
20
1.0
100
1
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 70 °C
VDS ≤ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.0 A
VGS = 2.5 V, ID = 4.7 A
VGS = 1.8 V, ID = 4.3 A
VDS = 10 V, ID = 5.0 A
IDSS
µA
A
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
10
ID(on)
0.028
0.042
0.050
24
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
RDS(on)
gfs
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
865
105
55
12
8.8
1.1
0.7
2.4
8
V
DS = 10 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 10 V, VGS = 5 V, ID = 5.0 A
18
14
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
f = 1 MHz
Gate-Drain Charge
Ω
Gate Resistance
0.5
4.8
16
26
47
16
10
20
32
12
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 10 V, RL = 2.2 Ω
Rise Time
17
31
8
ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
5
VDD = 10 V, RL = 2.2 Ω
Rise Time
13
21
6
ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
1.75
20
A
IS = 4 A, VGS = 0 V
0.75
12
5
1.2
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
7
ns
tb
5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
4
3
2
1
0
V
= 1 0 V t h r u 3 V
GS
15
10
5
V
= 2 . 5 V
GS
T
= 25 °C
C
T
= 125 °C
C
V
= 1 V
1.5
GS
T
= - 55 °C
C
0
0.0
0.5
1.0
2.0
0.0
0.3
V
0.6
0.9
1.2
1.5
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Transfer Characteristics
Output Characteristics
0.045
0.040
0.035
0.030
0.025
0.020
1200
900
600
300
0
V
GS
= 1.8 V
= 2.5 V
C
iss
V
GS
V
= 4.5 V
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
I
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
D
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
1.70
1.45
1.20
0.95
0.70
I
= 5 A
D
V
= 2.5 V, I = 4.7 A
D
GS
V
= 10 V
DS
V
= 5 V
DS
V
= 4.5 V, I = 5 A
D
GS
V
= 16 V
DS
0
2
4
6
8
10
- 50 - 25
0
25
50
75
100 125 150
T
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
J
g
On-Resistance vs. Junction Temperature
Gate Charge
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
0.05
0.04
0.03
0.02
I
= 5 A
D
T
= 150 °C
J
10
T
= 125 °C
J
T
= 25 °C
J
1
T
= 25 °C
J
0.1
0.0
0.3
0.6
0.9
1.2
0
2
4
6
8
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.9
0.7
0.5
0.3
0.1
32
24
16
8
I
= 250 μA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power (Junction-to-Ambient)
T
- Temperature (°C)
J
Threshold Voltage
100
Limited by R
*
DS(on)
10
100 μs
1 ms
1
10 ms
T
= 25 °C
A
100 ms
Single Pulse
0.1
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V
> minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7.5
6.0
Package Limited
4.5
3.0
1.5
0.0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
2.5
2.0
1.5
1.0
0.5
0.0
1.2
0.9
0.6
0.3
0.0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
C
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
10 000
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0.05
0.1
10
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
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RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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