FTVACB

更新时间:2024-09-18 08:30:20
品牌:VECTRON
描述:Voltage Controlled Crystal Oscillator (VCXO)

FTVACB 概述

Voltage Controlled Crystal Oscillator (VCXO) 压控晶体振荡器( VCXO )

FTVACB 数据手册

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Product Data Sheet  
F-Type  
Voltage Controlled Crystal Oscillator (VCXO)  
Features  
nIndustry Common Pinout  
nCommercial or Industrial Temperature Range  
nTTL or CMOS Drive Capability  
nHermetic Package  
n5.0 V or 3.3 V Supply  
Description  
The F-Type Voltage Controlled Crystal Oscillator  
(VCXO) is used in a phase lock loop applications  
including clock recovery and frequency translation  
applications. The metal package is grounded for  
improved EMI performance.  
The FTV Voltage Controlled Crystal Oscillator  
Pin Information  
Table 1. Pin Function  
Pin  
1
7
8
14  
Symbol  
VC  
GND  
Output  
VDD  
Function  
VCXO Control Voltage  
Case Ground  
14  
1
8
7
VCXO Output  
Power Supply Voltage (3.3 or 5.0 V ±10%)  
Performance Characteristics  
Table 2. Electrical Performance  
Parameter  
Symbol  
To  
f0  
Minimum  
Typical  
Maximum  
Units  
°C  
MHz  
ppm  
V
Operating Temperature Range  
Center Frequency1  
Absolute Pull Range  
Supply Voltage2  
Supply Current  
Output Voltage Levels3  
Output High  
0 to 70, -20 To 70, or -40 to 85  
-
1
52  
+/- 20 to +/-100  
3.3 or 5.0 (+/-10%)  
0.45 mA/MHz  
VDD  
IDD  
-
35  
mA  
VOH  
VOL  
0.9 VDD  
-
V
V
Output Low  
0.1 VDD  
Transition times3  
Rise Time  
TR  
TF  
-
-
-
-
5.0  
5.0  
ns  
ns  
Fall Time  
Fanout  
Start-Up Time  
-
-
-
2
-
10  
-
0.9 VDD  
10 TTL  
TTL  
ms  
V
tsu  
VC  
Fo  
Control Voltage  
Fanout  
0.1 VDD  
-
-
Loads  
1. Other frequencies may be available, please contact factory with your special requirements.  
2. A 0.1 mF low frequency tantalum bypass capacitor in parallel with a 0.01 mF high frequency ceramic capacitor is recommended. Both should be located as close to the FTU-Type bias pin as is practical  
3. Figure 1 defines these parameters. Figure 2 illustrates the equivalent TTL load and operating conditions under which these parameters are specified and tested.  
TF  
TR  
I
DD  
650W  
VOH  
VS  
14  
1
+
-
8
VDD  
7
VOL  
I
C
15pF  
1.83k  
W
On Time  
+
-
V
0V  
C
Period  
Figure 1. Output Waveform  
Figure 2. Output Test Conditions (25±5°C)  
Vectron International · 267 Lowell Road, Hudson, NH 03051 · Tel: 1-88-VECTRON-1· http://www.vectron.com  
1
F-Type VCXO  
Table 3. ESD Threshold Voltage  
Handling Precautions  
Model  
Threshold  
Unit  
Volts Min.  
Volts Min.  
Although protection circuitry has been designed into this  
device, proper precautions should be taken to avoid exposure  
to electrostatic discharge (ESD) during handling and mounting.  
VTI employs a human-body model (HBM) and a charged-  
device model (CDM) for ESD-susceptibility testing and  
protection design evaluation.  
Human-Body (HBM)  
1000*  
500  
Charged-Device (CDM)  
*Mil-STD-883D, Method 3015, Class 1  
Table 4. Mechanical and Environmental Compliance  
Parameter  
Mechanical Shock  
Mechanical Vibration  
Temperature Cycle  
Gross Leak  
Conditions  
MIL-STD-883C, 2002.3, A  
MIL-STD-883C, 2007.1, A  
MIL-STD-883C, 1010, A  
100% Deionized Water  
MIL-STD-883C, 1014.7  
2 lbs Perpendicular to Top and Bottom  
MIL-STD-202E, 211A, C  
MIL-STD-202E, 215  
ESD voltage thresholds are dependent on the circuit  
parameters used to define the mode. Although no industry-  
wide standard has been adopted for the CDM, a standard HBM  
(resistance = 1500W, capacitance = 100pF) is widely used and  
therefore can be used for comparison purposes. The HBM  
ESD threshold presented here was obtained by using these  
circuit parameters.  
Fine Leak  
Seal Strength  
Bend Test  
Marking  
Storage Temperature  
-55°C to 125°C  
Outline Diagram  
VTI  
FTVGCA  
35.3280  
743  
Figure 3 Outline Diagram  
Ordering Information  
Table 5. Part Numbering  
Example Part #  
F
T
V
G
C
A
Package  
Supply  
Voltage (V)  
VCXO  
Type  
Pull (ppm)  
Operating  
Temp. (°C)  
Output  
Load  
4 pin DIP  
VCXO  
0 to 70  
-40 to 85  
-20 to 70  
TTL  
50 ±5%  
TTL  
50 ±10%  
CMOS  
50 ±5%  
CMOS  
50 ±10%  
F
T
V
F
C
L
I
A
B
J
5.0±10%  
±32  
±50  
D
G
H
A
3.3±10%  
±100  
K
±100  
TPR  
Other specifications may be available on request.  
For Additional Information Please Contact:  
USA: Vectron International · 267 Lowell Road, Hudson, NH 03051 · Tel: 1-88-VECTRON-1 · Fax: 1-888-FAX-VECTRON  
EUROPE:  
Tel: 49 (0) 3328 4784 17 • Fax: 49 (0) 3328 4784 30  
ASIA:  
Tel: +86 21 28909740 / 41 / 42 • Fax: +86 21 28909240 / 2890999  
I
rev 1.2, 4/27/98, 08/16/02  
Vectron International reserves the right to make changes to the product(s) and/or information contained herein without notice. No liability is assumed as a result of their use or  
application. No rights under any patent accompany the sale of any such product(s) or information.  
2

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