IQE022N06LM5SC
IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5SC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.
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INFINEON
IRFSL7437
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
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INFINEON
