VS-800-EG-U-E-A [VECTRON]
Ultra-Low Jitter High Frequency VCSO;
| 型号： | VS-800-EG-U-E-A |
| 厂家： | 
Vectron International, Inc |
| 描述： | Ultra-Low Jitter High Frequency VCSO |
| 文件： | 总9页 (文件大小：1116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-800
Ultra-Low Jitter High Frequency VCSO
VS-800
Description
TheVS-800isaVoltageControlledSAWOscillatorthatoperatesatthefundamentalfrequencyoftheinternalSAWresonator.TheSAWresonator
is a high-Q Quartz device that enables the circuit to achieve ultra-low phase jitter performance over a wide operating temperature range. An
internal multiplier circuit is deployed for output frequencies above 1.6 GHz. The oscillator is housed in a hermetically sealed leadless surface
mountpackageandofferedontapeandreel.IthasaOutputEnablefunctionthatprovidestheconditions:OutputsEnabled,orOutputsDisabled.
Features
Applications
• Industry Standard Package: 5.0 x 3.2 x 1.8 mm³
• Output Frequencies: 800 MHz to 3.2 GHz
• Next Generation ASIC Technology for Ultra-Low Jitter
60 fs-rms (fN = 1.56897 GHz, 1 kHz to 40 MHz)
6 fs-rms (fN = 1.56897 GHz, 12 kHz to 20 MHz)
10 fs-rms (fN = 1.56897 GHz, 10 kHz to 100 MHz)
• Absolute Pull Range: ±20 ppm
• High Speed Data Converters (ADC / DAC)
• Optical Transport Networks (40G / 100G / 200G / 400G / 1.2T)
• Wireless Communication
• Cable Modem Termination Systems (DOCSIS)
• High-Rel. Military Applications
• Supply Voltage: 3.3 V
• Differential or Single Ended Sinewave Output
• Output Enable / Disable (OE / OD)
• Compliant to EU RoHS6 Directive
Block Diagram
GND
COUT/SE
OUT
OE
Vcc
Single Ended /
Diffential
SAW
Sinewave
N
N = 1,2
Vcc
GND
GND
GND
Vc
Figure 1. Functional block diagram
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Performance Specifications
Electrical Performance
Parameter
Symbol
Minimum
Typical
Maximum
Units
Notes
Frequency
800-1600
1600-3200
100
MHz
MHz
ppm
ppm
ppm
ppm
Fundamental Frequency
fN
fN
2x Frequency Multiplier
Temperature Stability (-40°C to +85°C)
Supply Voltage Sensitivity
Load pull
fTEMP
-10
+10
10
1
3
1
APR
20
Absolute Pull Range
Supply
VCC
ICC
3.14
3.3
75
3.46
150
V
Voltage ( 5ꢀ)
mA
6
Current (Typical 50 Ω Load)
Control Voltage Input
VC
0
VCC
V
ppm/V
ppm
ꢀ
Control Voltage Range
Gain Transfer
Kv
TPull
+110
300
2
2
2
2
Total Pull
LVC
7
Linearity
KvMAX / KvMIN
BW
< 2.75:1
100
Gain Transfer Ratio
Modulation Bandwidth
kHz
RF Output (Sinewave)
CLK
CLK
CLK
CLK
3
-3
5
8
3
dBm
dBm
3
Output Power (Single Ended, 1x)
Output Power (Differential, 1x)
Output Power (Single Ended, 2x)
Output Power (Differential, 2x)
Sub-Harmonics Suppression (2x Multiplier)
Phase Noise @ 10 Hz
0
3,7
3
TBD
-3
TBD
0
TBD
3
dBm
dBm
3,7
>25
-33
-65
-95
-125
-145
-164
-172
-164
60
dBc
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
fs-rms
fs-rms
fs-rms
°C
4
4
Phase Noise @ 100 Hz
4
Phase Noise @ 1 kHz
4
Phase Noise @ 10 kHz
4
Phase Noise @ 100 kHz
Phase Noise @ 1 MHz
4
4
Phase Noise @ 10 MHz
4
Phase Noise @ 100 MHz
Jitter (1 kHz - 40 MHz)
ΦJ
ΦJ
ΦJ
TOP
4,5
4,5
4,5
6
Jitter (12 kHz - 20 MHz)
Jitter (10 kHz - 100 MHz)
Operating Temperature
Package Size
10
-40
+85
5.0 x 3.2 x 1.8
mm3
Notes:
1. VCC : 3.3 V 5ꢀ
2. VC : 0 V to VCC
3. Load Impedance 50 Ohm with VSWR ≤ 1.5:1
4. For carrier frequency 1.56897 GHz, DIFF1X output configuration
5. Place 1 µF, 10 nF bypass capacitors close to VCC pads
6. Maximum current consumption is depending on output configuration
7. Output power measured single ended with other output terminated to 50 Ohm
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Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Symbol
VCC
Ratings
Unit
V
Power Supply
4
150
Input Current
IIN
mA
mA
V
Output Current
Voltage Control
Output Enable
Storage Temperature
IOUT
25
VC
VCC
OE
VCC
V
TSTR
-55 to +95
260 / 40
°C
Soldering Temperature / Duration
TPEAK / tP
°C ꢁ s
Stresses in excess of the absolute maximum ratings can permanently damage the device. Also, exposure to these absolute maximum
ratings for extended periods may adversely affect device reliability. Functional operation is not implied at these or any other conditions in
excess of those represented in the operational sections of this datasheet.
Typical Performance Characteristics: Vc Pull (DIFF 1x output configuration)
Figure 2. Vc Pull Performance Characteristics @ 1.56897 GHz
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Typical Characteristics: Phase Noise @ 1.56897 GHz (DIFF 1X output configuration)
Figure 3. Typical Phase Noise Performance @ 1.56897 GHz (BW 10 kHz to 100 MHz)
Typical Characteristics: Phase Noise @ 1.56897 GHz (DIFF 1X output configuration)
Figure 4. Typical Phase Noise Performance @ 1.56897 GHz (BW 12 kHz to 20 MHz)
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Typical Characteristics: Phase Noise @ 2.94912 GHz (DIFF 2X output configuration)
Figure 5. Typical Phase Noise Performance @ 2.94912 GHz (BW 10 kHz to 100 MHz)
Typical Characteristics: Phase Noise @ 2.94912 GHz (DIFF 2X output configuration)
Figure 6. Typical Phase Noise Performance @ 2.94912 GHz (BW 12 kHz to 20 MHz)
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Reliability
VI qualification includes aging at various extreme temperatures, shock and vibration, temperature cycling, and IR reflow simulation. The
VS-800 family is capable of meeting the following qualification tests:
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Conditions
MIL-STD-883, Method 2002
MIL-STD-883, Method 2007
MIL-STD-883, Method 2003
MIL-STD-883, Method 1014
MIL-STD-883, Method 2016
IPC/JEDEC J-STD-020, MSL1
Gross and Fine Leak
Resistance to Solvents
Moisture Sensitivity Level
Handling Precautions
Although ESD protection circuitry has been designed into the VS-800 proper precautions should be taken when handling and mounting.
VI employs a Human Body Model (HBM), a Charged Device Model (CDM), and a Machine Model (MM) for ESD susceptibility testing and
design protection evaluation.
ESD Ratings
Model
Minimum
2000 V
Conditions
Human Body Model
Charged Device Model
Machine Model
MIL-STD 883, Method 3015
JEDEC, JESD22-C101
JEDEC, JESD22-A115-A
1000 V
200 V
Reflow Profile (IPC/JEDEC J-STD-020)
Parameter
PreHeat Time
Symbol
t S
Value
60 s min., 180 s max.
Ramp Up
R UP
3°C / s max.
Time Above 217°C
Time To Peak Temperature
Time At 260°C
t L
60 s min., 150 s max.
480 s max.
t AMB-P
t P
20 s min., 40 s max.
6°C / s max.
Ramp Down
R DN
The device has been qualified to meet the JEDEC standard for
Pb-free assembly. The temperatures and time intervals listed are
based on the Pb-free small body requirements. The temperatures
refer to the topside of the package, measured on the package
body surface. The VS-800 device is hermetically sealed so an
aqueous wash is not an issue.
Terminal Plating: Electroless Au > 1.50 µm over
Electroless Ni > 1.90 µm
Figure 7. Recommended Reflow Profile
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Outline Drawing&Pad Layout
Pin Out
Output Enable
Voltage Range
Pin
1
Symbol
GND
VC
Function
Level
Result
Output Enabled
(OE)
Case and Electrical Ground
H
> VCC -0.5 V
2
Control Voltage
Case and Electrical Ground
Supply Voltage
Output Disabled
(OD)
L
< 0.5V
3
GND
VCC
4
5
VCC
Supply Voltage
6
OUT
Differential Output
Complementary Differential Output /
Single Ended Output
7
COUT/SE
8
9
GND
OE
Case and Electrical Ground
Output Enable
10
GND
GND
Case and Electrical Ground
Case and Electrical Ground
Center
Tape and Reel (EIA-481-2-A)
Suggested OE schemaic
Tape Dimensions (mm)
Reel Dimensions (mm)
Dimension
Tolerance
VS-800
W
Typ.
16
F
Do
Typ.
1.5
Po
Typ.
4
P1
Typ.
8
A
B
C
D
N
Min.
50
W1
Typ.
16.4
W2
#Per
Reel
Typ.
7.5
Typ.
178
Min.
1.5
Typ.
13
Min.
20.2
Max.
22.4
200
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Ordering Information
Standard Frequencies (MHz)
800.000000
983.040000
1.47456000
993.409690
Standard Frequencies (GHz)
1.22880000
2.94912000
1.56897000
1.60000000
1.96608000
2.45760000
2.50000000
Other Frequencies Available Upon Request
Ordering Information
VS- 800 - E G U - A A N N - xGxxxxxxxx
Product Family
VS: VCSO
Frequency (See Above)
800M000000 - 3G20000000
Package
800: 5.0 x 3.2 x 1.8 mm³
Factory Use
N: N/A
Supply Voltage
E: 3.3 V
Output
E: Single Ended Sinewave
G: Differential Sinewave
Factory Use
N: N/A
Operating Temperature
U: 0°C to 85°C
E: -40°C to 85°C
Control Logic (Float Condition)
A: L=OD, H=OE, Float = OE
Absolute Pull Range
A: 5 ppm
E: 20 ppm
Example: VS-800-EGE-AANN-2G45760000
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Revision History
Date
03Nov2016
Approved
MK
Description
Change the Layout of development specification
02Jun2017
MK, TM
Change from preliminary version to final version; remove the suggested OE schematic and the pre-
production remark for the OE function, changed PN plots
For Additional Information, Please Contact
USA:
Europe:
Asia:
Vectron International
267 Lowell Road, Suite 102
Hudson, NH 03051
Vectron International
Potsdamer Strasse, D-14513
Teltow, Germany
Vectron International
68 Yin Cheng Road (C), 22nd Floor
One LuJiaZui
Tel: 1.888.328.7661
Tel: +49 (0) 3328.4784.17
Pudong, Shanghai, 200120 China
Tel: +86.21.6194.6886
Fax: +86.21.6194..6699
Fax: 1.888.329.8328
Fax: +49 (0) 3328.4784.30
Disclaimer
Vectron International reserves the right to make changes to the product(s) and or information contained herein without notice. No liability is assumed as a result of their use or application.
No rights under any patent accompany the sale of any such product(s) or information.
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