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MSYSTEM
TI
MSYSTEM
PSC-12300A-C
Rechargeable Sealed Lead Acid Battery PS â General Purpose Series
POWER-SONIC
MSYSTEM
TLV9064IPWT
适用于成本优化型应用的四路、5.5V、10MHz、RRIO 运算放大器 | PW | 14 | -40 to 125
TI
SUNTSU
HVF-5W0-R
Space-saving Plug-in Signal Conditioners H-UNIT
MSYSTEM
MSYSTEM
MURATA
MURATA
EATON
SWT7-J2BTR
Model SWT7 Tactile Switches, 6.2 X 6.3 mm Low Profile, SMD RoHS Compliant
TTELEC
M2TG-5D-P/N
Super-mini Signal Conditioners Mini-M Series
MSYSTEM
MSYSTEM
TE
ECE
HVF-52-R/Q
Space-saving Plug-in Signal Conditioners H-UNIT
MSYSTEM
SUNTSU
NANYA
M2TG-4A-R
Super-mini Signal Conditioners Mini-M Series
MSYSTEM
NANYA
XTAITQ
NANYA
MSYSTEM
NANYA
PCIMX6X4CVM10AC
i.MX 6SoloX Applications Processors for Industrial Products
NXP
NANYA
MSYSTEM
IPB330P10NM
D²PAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持正常电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
INFINEON
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KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
