-SP12NAA008ME01-LR88F78T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | -SP12NAA008ME01-LR88F78T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总37页 (文件大小：14512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP12NAA008ME01-LR88F78T
datasheet
flowANPC S3
1200 V / 8 mΩ
Features
flow S3 12 mm housing
● Active NPC topology
● Ultra-high switching frequency with SiC MOSFETs
● Optimized for 1500Vdc applications
● Low inductive mid-power package
● Supports interleaved operation
Schematic
Target applications
● Solar Inverters
Types
● B0-SP12NAA008ME01-LR88F78T
Copyright Vincotech
1
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC Switch
VDSS
Drain-source voltage
1200
148
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
480
A
Ptot
Total power dissipation
262
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Neutral Point Switch
VCES
Collector-emitter voltage
1200
128
300
226
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
DC-Link Diode
VRRM
Peak repetitive reverse voltage
1200
104
300
172
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
2
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Switch
VCES
Collector-emitter voltage
1200
128
300
226
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Neutral Point Diode
VRRM
Peak repetitive reverse voltage
1200
104
300
172
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
9,53
V
mm
mm
8,19
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
3
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Switch
Static
25
5,6
1,8
9
10,4(1)
rDS(on)
Drain-source on-state resistance
15
160
125
150
11
12
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,046
25
25
25
2,5
40
3,6
1000
76
V
15
0
0
nA
µA
Ω
1200
4
0,425
472
13428
516
32
Qg
Gate charge
-4/15
800
160
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
0
pF
V
80
4,6
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,36
K/W
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
34,24
30,4
td(on)
Turn-on delay time
125
150
25
ns
ns
29,76
14,4
tr
td(off)
tf
Rise time
125
150
25
12,8
12,16
154,88
177,28
183,36
41,56
43,02
42,14
0,973
0,818
0,801
0,431
0,464
0,482
57,38
66,88
70,09
35,15
35,4
Rgon = 4 Ω
Rgoff = 4 Ω
Turn-off delay time
125
150
25
ns
Fall time
125
150
25
ns
QrFWD=1,16 µC
QrFWD=1,37 µC
QrFWD=1,46 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
mWs
mWs
A
Eoff
0/15
600
40
125
150
25
IRRM
125
150
25
trr
125
150
25
ns
35,88
1,16
di/dt=3489 A/µs
di/dt=4139 A/µs
di/dt=4327 A/µs
Qr
125
150
25
1,37
μC
1,46
0,357
0,571
0,635
4007
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
4266
4436
Copyright Vincotech
5
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,015
150
25
5,4
6
6,6
V
V
25
1,58
1,8
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 600 V
15
150
1000
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,42
K/W
Dynamic
25
319,36
334,72
338,56
62,08
74,24
77,76
247,36
287,04
296,64
77,11
104,65
111,69
13,91
18,53
20,08
10,68
14,39
15,49
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
Rise time
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
135
tf
125
150
25
ns
QrFWD=11,82 µC
QrFWD=19,01 µC
QrFWD=21,51 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Diode
Static
25
1,79
1,9
2,1(1)
VF
IR
Forward voltage
150
125
150
V
1,9
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,55
K/W
25
82,45
86,04
88,02
325,48
489,27
540,31
11,82
19,01
21,51
3,99
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=1925 A/µs
di/dt=1659 A/µs
di/dt=1643 A/µs
Qr
Recovered charge
±15
600
135
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
6,77
mWs
A/µs
7,72
433,38
360,37
331,11
(dirf/dt)max
125
150
Copyright Vincotech
7
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,015
150
25
5,4
6
6,6
V
V
25
1,58
1,8
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 600 V
15
150
1000
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,42
K/W
25
304,32
318,72
322,56
46,72
56,64
60,48
256,96
298,88
308,16
79,44
113,41
120,75
8,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
125
tf
125
150
25
ns
QrFWD=12,64 µC
QrFWD=20,51 µC
QrFWD=23,29 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
12,8
mWs
mWs
14,42
9,87
Eoff
125
150
13,56
14,96
Copyright Vincotech
8
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Diode
Static
25
1,79
1,9
2,1(1)
VF
IR
Forward voltage
150
125
150
V
1,9
Reverse leakage current
Vr = 1200 V
25
40
µA
Thermal
λpaste = 4,4 W/mK
(PTM)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,55
K/W
Dynamic
25
118,78
118,84
120,44
257,69
416,79
467,22
12,64
20,51
23,29
4,91
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2704 A/µs
di/dt=2202 A/µs
di/dt=2119 A/µs
Qr
Recovered charge
±15
600
125
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
8,12
mWs
A/µs
9,22
1287
(dirf/dt)max
125
150
694,05
634,74
Copyright Vincotech
9
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
4,7
kΩ
%
R100 = 401 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,3
B(25/50)
Tol. ±3 %
Tol. ±3 %
3612
3650
B(25/100)
B-value
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
300
300
250
200
150
100
50
VGS
:
-4 V
-2 V
0 V
250
200
150
100
50
2 V
4 V
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
-50
-100
-150
-200
-250
-300
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
DS(V)
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
VDS(V)
tp
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
=
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
350
10
300
250
200
150
100
50
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,363
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
3,12E-02
5,80E-02
1,74E-01
6,98E-02
3,03E-02
3,34E+00
6,26E-01
6,78E-02
1,25E-02
1,39E-03
Copyright Vincotech
11
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 7.
IGBT
figure 8.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,42
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,01E-02
7,90E-02
2,16E-01
5,52E-02
1,93E-02
3,17E+00
5,66E-01
8,74E-02
2,28E-02
1,55E-03
Copyright Vincotech
12
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Switch Characteristics
figure 9.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Diode Characteristics
figure 10.
FWD
figure 11.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,554
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,67E-02
9,06E-02
2,74E-01
9,64E-02
3,58E-02
2,72E+00
4,39E-01
6,77E-02
1,56E-02
1,06E-03
Copyright Vincotech
14
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 14.
IGBT
figure 15.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,42
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,01E-02
7,90E-02
2,16E-01
5,52E-02
1,93E-02
3,17E+00
5,66E-01
8,74E-02
2,28E-02
1,55E-03
Copyright Vincotech
15
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Switch Characteristics
figure 16.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
16
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,554
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,67E-02
9,06E-02
2,74E-01
9,64E-02
3,58E-02
2,72E+00
4,39E-01
6,77E-02
1,56E-02
1,06E-03
Copyright Vincotech
17
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
18
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switching Characteristics
figure 20.
MOSFET
figure 21.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
4
V
V
Ω
Ω
125 °C
150 °C
600
0/15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 22.
MOSFET
figure 23.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Copyright Vincotech
19
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switching Characteristics
figure 24.
MOSFET
figure 25.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tf
tr
td(on)
tf
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
4
°C
V
150
600
0/15
40
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 26.
MOSFET
figure 27.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
0/15
40
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
20
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switching Characteristics
figure 28.
MOSFET
figure 29.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
0/15
40
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 30.
MOSFET
figure 31.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
100
80
60
40
20
0
175
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0,0
0
10
20
30
40
50
60
70
80
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
0/15
40
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
21
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switching Characteristics
figure 32.
MOSFET
figure 33.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
7000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
80
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
0/15
40
125 °C
150 °C
Tj:
Tj:
Rgon
figure 34.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
350
ID MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
22
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
35
30
25
20
15
10
5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
10
10
Erec
Erec
8
8
Erec
Erec
6
6
Erec
4
4
Erec
2
2
0
0
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tr
tf
tr
tf
-1
10
-1
10
-2
10
-2
10
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
135
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
24
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
35
30
25
20
15
10
5
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Neutral Point Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
2250
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
0
50
100
150
200
250
300
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
26
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Switching Characteristics
figure 50.
IGBT
figure 51.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
40
35
30
25
20
15
10
5
25
20
15
10
5
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eoff
Eoff
0
0
0
50
100
150
200
250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
125
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 52.
FWD
figure 53.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
12,5
10,0
7,5
Erec
Erec
Erec
Erec
Erec
5,0
5,0
Erec
2,5
2,5
0,0
0,0
0
50
100
150
200
250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
125
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Switching Characteristics
figure 54.
IGBT
figure 55.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tf
tr
-1
10
-1
10
tf
tr
-2
10
-2
10
0
50
100
150
200
250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
125
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 56.
FWD
figure 57.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
125
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Switching Characteristics
figure 58.
FWD
figure 59.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
35
30
25
20
15
10
5
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
50
100
150
200
250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
125
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 60.
FWD
figure 61.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
50
100
150
200
250
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
125
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
29
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
DC-Link Switching Characteristics
figure 62.
FWD
figure 63.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3500
4500
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
0
50
100
150
200
250
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
125
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 64.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Switching Definitions
figure 65.
IGBT
figure 66.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 67.
IGBT
figure 68.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Switching Definitions
figure 69.
FWD
figure 70.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switching Definitions
figure 65.
MOSFET
figure 66.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 67.
MOSFET
figure 68.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
AC Switching Definitions
figure 69.
FWD
figure 70.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 71.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Ordering Code
Marking
Version
Ordering Code
With thermal paste (4,4 W/mK, PTM6000)
B0-SP12NAA008ME01-LR88F78T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
not assembled
9,5
2
0
0
DC-
DC-
3
12,7
4
not assembled
15,4
5
0
DC-
DC-
6
2,7
0
15,4
7
21,2
GND
GND
8
2,7
21,2
9
not assembled
not assembled
29,3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
0
2,7
0
GND
GND
DC+
DC+
DC+
29,3
35,1
2,7
0
35,1
37,8
not assembled
41
0
DC+
not assembled
44,1
8
P
16
45,95
S15
G15
G16
S16
N
19
45,95
22,15
22,15
22,15
30,8
30,8
37,55
40,55
37,7
37,7
52,4
52,4
27,2
24,2
15,5
6,2
G12
S12
S13
G13
G14
S14
S11
G11
3,2
35,25
36,25
23,8
20,8
50,4
47,4
not assembled
23,25
52,4
52,4
52,4
52,4
Ph
Ph
Ph
Ph
20,55
17,85
15,15
not assembled
49,4
52,4
0
0
Therm2
Therm1
Copyright Vincotech
35
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Pinout
DC+
13, 14, 15, 17
T11
D15
G11
32
S11
31
P
19
T15
D11
D12
T13
T14
G15
21
S15
20
G13
28
S13
27
GND
Ph
34-37
7, 8, 11, 12
T16
G14
29
G16
22
S16
23
S14
30
N
24
T12
D16
G12
25
Rt
S12
26
Therm1
40
Therm2
39
2, 3, 5, 6
DC-
Identification
Component
Voltage
Current
Function
Comment
ID
D11, D12
T13, T14
T15, T16
D15, D16
T11, T12
Rt
FWD
MOSFET
IGBT
1200 V
1200 V
1200 V
1200 V
1200 V
150 A
8 mΩ
150 A
150 A
150 A
Neutral Point Diode
AC Switch
Neutral Point Switch
DC-Link Diode
DC-Link Switch
Thermistor
FWD
IGBT
Thermistor
Copyright Vincotech
36
07 Jul. 2021 / Revision 2
B0-SP12NAA008ME01-LR88F78T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP12NAA008ME01-LR88F78T-D1-14
B0-SP12NAA008ME01-LR88F78T-D2-14
26 Feb. 2021
7 Jul. 2021
Module marking is updated with UL logo, product is
unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
37
07 Jul. 2021 / Revision 2
相关型号：
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
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