10-E1066PA050SA-L855F38Z [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 10-E1066PA050SA-L855F38Z |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总16页 (文件大小:3100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
flowPACK E1
600 V / 50 A
Features
flow E1 12 mm housing
● Trenchstop™ IGBT3 technology
● Standard industrial housing
● Optimized Rth(j-s) with Phase Change Material
● Built-in NTC
Press-fit pin
Solder pin
Schematic
Target applications
● Industrial Drives
Types
● 10-EZ066PA050SA-L855F38T
● 10-E1066PA050SA-L855F38Z
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
Collector-emitter voltage
VCES
IC
600
51
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Ptot
VGES
tSC
tp limited by Tjmax
Tj = Tjmax
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
150
95
A
Ts = 80 °C
W
V
±20
6
Short circuit ratings
VGE = 15 V
Vcc = 360 V
Tj = 150 °C
µs
°C
Maximum junction temperature
Tjmax
175
Copyright Vincotech
1
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
600
46
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
67
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
General Properties
LP
Stray inductance
25
nH
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
8,62
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
2
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0008 25
25
5
5,8
6,5
V
V
1,05
1,57
1,76
1,80
1,85
VCEsat
Collector-emitter saturation voltage
15
50
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
2,6
µA
nA
Ω
20
600
none
3140
200
93
Cies
Coes
Cres
f = 1 Mhz
0
25
25
pF
Output capacitance
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,00
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
150
95
100
14
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
18
Rgon = 8 Ω
Rgoff = 8 Ω
ns
161
184
109
131
0,675
1,02
1,30
1,76
Turn-off delay time
Fall time
±15
300
50
Qr
Qr
= 2,3 μC
= 4,4 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)*
FWD
mWs
Turn-off energy (per pulse)*
* Ls = 14 nH
Copyright Vincotech
3
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,64
1,56
1,54
1,9
27
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
600
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,41
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
52
62
130
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
172
di/dt = 3939 A/μs
di/dt = 3496 A/μs
2,29
4,37
0,515
0,92
3909
2375
±15
300
50
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50) Tol. ±2 %
B(25/100) Tol. ±2 %
3375
3437
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
4
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,00
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,45E-01
5,28E-01
2,00E-01
8,09E-02
4,17E-02
7,02E-01
9,42E-02
2,95E-02
5,41E-03
5,79E-04
Copyright Vincotech
5
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80 ºC
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
6
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,41
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
7,38E-02
1,47E-01
6,53E-01
3,22E-01
1,24E-01
9,40E-02
2,82E+00
4,00E-01
7,18E-02
2,02E-02
4,33E-03
4,82E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
7
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
150 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
300
±15
8
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
300
±15
50
V
V
A
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
300
±15
8
V
V
Ω
VCE
VGE
I C
=
=
=
300
±15
50
V
V
A
150 °C
150 °C
R gon
Copyright Vincotech
8
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
300
±15
8
°C
V
Tj =
150
300
±15
50
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
300
At
VCE
=
V
V
Ω
At
VCE
=
300
±15
50
V
V
A
25 °C
25 °C
150 °C
Tj:
Tj:
VGE
=
=
±15
VGE
I C
=
150 °C
R gon
8
=
Copyright Vincotech
9
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
300
±15
8
V
V
Ω
At
VCE
VGE
I C
=
300
±15
50
V
V
A
25 °C
25 °C
150 °C
Tj:
Tj:
=
=
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
300
±15
8
V
V
Ω
At
VCE
VGE
I C
=
300
±15
50
V
V
A
25 °C
25 °C
150 °C
Tj:
Tj:
VGE
=
=
=
150 °C
R gon
=
Copyright Vincotech
10
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dir r/dt
t
t
i
300
At
VCE
=
V
V
Ω
At
VCE
VGE
I C
=
300
±15
50
V
25 °C
25 °C
150 °C
Tj:
Tj:
VGE
=
=
±15
=
V
A
150 °C
R gon
8
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
150
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
11
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
300
50
V
300
50
V
A
A
tdoff
=
184
ns
tdon
=
100
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
300
50
V
VC (100%) =
I C (100%) =
300
50
V
A
A
131
ns
tr
=
18
ns
Copyright Vincotech
12
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
300
50
V
I F (100%) =
Q r (100%) =
50
A
A
4,37
μC
62
A
trr
=
172
ns
Copyright Vincotech
13
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
Ordering Code
10-EZ066PA050SA-L855F38T
10-EZ066PA050SA-L855F38T-/3/
10-E1066PA050SA-L855F38Z
10-E1066PA050SA-L855F38Z-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
Function
DC+
Solder pin
12,8
16
9,6
9,6
9,6
9,6
9,6
6,4
3,2
0
1
2
DC+
Therm1
Therm2
DC-2
S13
3
4
22,4
25,6
32
5
6
32
7
32
DC-1
S11
8
32
9
28,8
6,4
0
G11
Press-fit pin
10
0
Ph1
11
12
13
3,2
0
0
0
0
6,4
Ph1
G12
G14
14
15
16
17
18
19
20
21
22
0
0
16
Ph2
Ph2
G16
Ph3
Ph3
G15
S15
DC-3
G13
19,2
25,6
25,6
25,6
25,6
25,6
22,4
16
0
3,2
6,4
28,8
32
32
32
Copyright Vincotech
14
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
600 V
50 A
50 A
Inverter Switch
D11, D12, D13, D14,
D15, D16
FWD
NTC
600 V
Inverter Diode
Thermistor
Rt
Copyright Vincotech
15
30 May. 2019 / Revision 3
10-EZ066PA050SA-L855F38T
10-E1066PA050SA-L855F38Z
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E1 packages see vincotech.com website.
Package data
Package data for flow E1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correction of Ic/If values
Outline updated
1
14
10-Ex066PA050SA-L855F38x-D3-14
30 May. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
30 May. 2019 / Revision 3
相关型号:
10-E106PMA030SA-L926A38Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-E1126PA025M7-L858F78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E1126PA035M7-L859F78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E1126PA050M7-L850F78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E112PMA010M7-L927A78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E112PMA015M7-L928A78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E112PMA025M7-L929A78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E112PNA010M7-L927C78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E112PNA015M7-L928C78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E206PMA050SA-L184A38Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-E2126PA050M7-L196F78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-E2126PA075M7-L197F78Z
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明