10-EZ126TA025SC-L858F43T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-EZ126TA025SC-L858F43T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总18页 (文件大小：6574K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EZ126TA025SC-L858F43T
datasheet
flowPACK E1
1200 V / 25 A
Topology features
flow E1 12 mm housing
● Inverter
● Kelvin Emitter for improved switching performance
● Tandem inverter diode
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Compact housing
Schematic
● CTI600 housing material
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Embedded Drives
● Servo Drives
Types
● 10-EZ126TA025SC-L858F43T
Copyright Vincotech
1
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
34
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
75
A
Ptot
96
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1300
28
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
86
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,62
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
2
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00085 25
25
5,3
5,8
6,3
V
V
1,58
1,83
2,12
2,18
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
25
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
2,4
µA
nA
Ω
20
25
120
None
1450
50
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
200
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,99
K/W
25
67,84
67,84
67,68
22,56
24,16
24,64
174,4
227,52
242,08
136,42
175,02
203,55
0,958
1,39
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 12,8 Ω
Rgoff = 12,8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
25
tf
125
150
25
ns
QrFWD=0,878 µC
QrFWD=1,7 µC
QrFWD=2,06 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,52
1,51
Eoff
125
150
2,4
2,7
Copyright Vincotech
3
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,46
3,4
3,18
3,1
3,74(1)
0,36
VF
IR
Forward voltage
30
125
150
V
Reverse leakage current
Thermal
Vr = 1300 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,11
K/W
25
11,4
14,02
15,02
206,56
290,78
327,56
0,878
1,7
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=794 A/µs
di/dt=808 A/µs
di/dt=783 A/µs
Qr
Recovered charge
±15
600
25
125
150
25
μC
2,06
0,371
0,703
0,859
667,57
66,42
63,82
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
4
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
70
70
VGE
:
7 V
8 V
60
50
40
30
20
10
60
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
20
10
15
10
5
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,987
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,10E-01
4,47E-01
2,86E-01
8,93E-02
5,44E-02
8,55E-01
8,90E-02
2,76E-02
5,06E-03
6,62E-04
Copyright Vincotech
6
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,11
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,60E-02
9,61E-02
4,91E-01
3,68E-01
1,08E-01
4,31E+00
7,11E-01
7,98E-02
1,98E-02
1,69E-03
Copyright Vincotech
8
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
5
4
3
2
1
0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eoff
Eon
Eoff
Eon
0
10
20
30
40
50
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
12,8
12,8
V
V
Ω
Ω
125 °C
150 °C
600
±15
25
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
12,8
V
V
Ω
125 °C
150 °C
600
±15
25
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
10
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
tf
td(off)
-1
10
-2
10
-3
10
tf
td(on)
tr
td(on)
-1
10
tr
-2
10
0
10
20
30
40
50
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
°C
V
150
600
±15
25
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
±15
12,8
12,8
V
Ω
Ω
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
12,8
V
V
Ω
125 °C
150 °C
600
±15
25
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
11
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
12,8
V
V
Ω
125 °C
150 °C
600
±15
25
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
IRM
5,0
5,0
2,5
2,5
0,0
0,0
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
12,8
V
V
Ω
125 °C
150 °C
600
±15
25
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1200
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
500
250
0
0
10
20
30
40
50
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
12,8
V
V
Ω
125 °C
150 °C
600
±15
25
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
60
IC MAX
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
12,8
12,8
Ω
Copyright Vincotech
13
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
14
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-EZ126TA025SC-L858F43T
10-EZ126TA025SC-L858F43T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
9,6
9,6
9,6
9,6
9,6
6,4
3,2
0
Function
DC+
DC+
Therm1
Therm2
DC-2
S13
12,8
16
2
3
22,4
25,6
32
4
5
6
32
7
32
DC-1
S11
8
32
9
28,8
6,4
3,2
0
0
G11
10
11
12
13
14
15
16
17
18
19
20
21
22
0
Ph1
0
Ph1
0
G12
0
6,4
16
G14
0
Ph2
0
19,2
25,6
25,6
25,6
25,6
25,6
22,4
16
Ph2
0
G16
3,2
6,4
28,8
32
Ph3
Ph3
G15
S15
32
DC-3
G13
32
Copyright Vincotech
16
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Pinout
DC+
1,2
D11-1
D11-2
D13-1
D13-2
D15-1
D15-2
T12
T14
T16
G14
13
G16
G12
12
16
Ph1
10,11
Ph2
14,15
Ph3
17,18
D12-1
D12-2
D14-1
D14-2
D16-1
T11
T13
T15
G13
22
G15
G11
9
19
D16-2
Rt
S11
8
S13
6
S15
20
DC-1
7
DC-2
5
DC-3
21
Therm1
3
Therm2
4
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
T15, T16
D11, D12, D13, D14,
D15, D16
IGBT
1200 V
1300 V
25 A
30 A
Inverter Switch
FWD
NTC
Inverter Diode
Thermistor
Rt
Copyright Vincotech
17
01 May. 2022 / Revision 2
10-EZ126TA025SC-L858F43T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E1 packages see vincotech.com website.
Package data
Package data for flow E1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EZ126TA025SC-L858F43T-D2-14
1 May. 2022
New Datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
01 May. 2022 / Revision 2
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