10-FY07NIB200S504-LH46F58 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FY07NIB200S504-LH46F58 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总30页 (文件大小：3332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07NIB200S504-LH46F58
datasheet
flowNPC 1
1200 V / 200 A
Features
flow 1 12 mm housing
● Three-level topology
● Optimized for Solar applications
● Enhanced efficiency
● Low inductive package
Schematic
Target applications
● Industrial Drives
● Solar Inverters
● UPS
Types
● 10-FY07NIB200S504-LH46F58
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
115
600
145
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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10-FY07NIB200S504-LH46F58
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
118
400
136
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
151
450
165
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
81
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
116
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Sw.Inv.Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
81
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
116
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-FY07NIB200S504-LH46F58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,002
200
25
3,2
4
4,8
V
V
25
1,39
1,48
1,51
1,75
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
none
12400
352
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
48
15
520
200
480
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,66
K/W
Dynamic
25
64
72
71
Turn-on delay time
td(on)
125
150
25
13
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
14
15
183
207
218
11
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
120
tf
20
22
1,063
1,492
1,614
1,504
2,277
Qr
FWD
Qr
FWD
Qr
FWD
= 4,4 μC
= 8,6 μC
= 10,1 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
2,570
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,50
1,44
1,42
1,92
10,6
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,70
K/W
Dynamic
25
126
181
194
IRRM
Peak recovery current
125
150
25
A
49
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
70
78
ns
di/dt = 6128 A/μs
di/dt = 5716 A/μs -5 / 15
di/dt = 6273 A/μs
4,434
8,609
10,066
0,791
1,728
2,134
8291
5871
4983
350
120
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,002
150
25
4,2
5
5,8
V
V
25
1,10
1,08
1,09
1,45
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
200
none
23250
60
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
150
872
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,58
K/W
Dynamic
25
95
94
94
Turn-on delay time
td(on)
125
150
25
7
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
9
9
356
397
412
74
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
90
tf
73
65
0,450
0,682
0,849
4,431
6,677
Qr
FWD
Qr
FWD
Qr
FWD
= 3,2 μC
= 5,9 μC
= 6,7 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
7,032
Copyright Vincotech
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16 May. 2019 / Revision 2
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,61
1,58
1,57
1,92
5,3
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
650
350
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,82
K/W
Dynamic
25
103
130
137
51
86
IRRM
Peak recovery current
125
150
25
125
150
25
125
150
25
125
150
25
A
trr
Qr
Reverse recovery time
ns
94
di/dt = 8581 A/μs
di/dt = 8320 A/μs -5 / 15
di/dt = 7500 A/μs
3,178
5,859
6,736
0,763
1,449
1,630
2631
2254
2303
90
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
Boost Sw.Inv.Diode
Static
25
1,61
1,58
1,57
1,92
5,3
VF
IR
125
150
Forward voltage
100
V
Reverse leakage current
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,82
K/W
Copyright Vincotech
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16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
8
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
600
600
VGE
:
7 V
I
I
8 V
500
9 V
500
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
400
300
200
100
0
400
300
200
100
0
0
0
1
2
3
4
5
0,5
1
1,5
2
2,5
3
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
200
I
Z
150
10-1
100
50
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
VGE (V)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,66
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
1,51E-01
2,63E-01
1,76E-01
4,82E-02
1,72E-02
1,15E+00
1,39E-01
4,50E-02
6,73E-03
8,69E-04
Copyright Vincotech
9
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
15
1000
130 V
V
I
12,5
100
520 V
10
7,5
5
10
1
0,1
2,5
0
0
0,01
100
200
300
400
500
QG (nC)
1
10
100
1000
VC E (V)
D =
single pulse
80 ºC
I C
=
200
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
10
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
600
Z
450
300
150
0
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,70
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,31E-02
1,11E-01
2,38E-01
2,33E-01
5,20E-02
2,09E-02
6,27E+00
1,20E+00
1,96E-01
6,03E-02
9,00E-03
1,31E-03
Copyright Vincotech
11
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
450
450
VGE
:
7 V
I
I
8 V
9 V
375
375
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
225
150
75
300
225
150
75
0
0
0
0
0,5
1
1,5
2
2,5
0,5
1
1,5
2
2,5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
120
I
Z
90
10-1
60
30
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
VGE (V)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,58
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
5,98E-02
1,01E-01
1,46E-01
1,95E-01
5,46E-02
1,61E-02
4,01E-03
4,17E+00
1,16E+00
1,69E-01
5,36E-02
9,70E-03
1,88E-03
1,49E-03
Copyright Vincotech
12
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
17,5
1000
V
I
15
100
130 V
520 V
12,5
10
10
1
7,5
5
0,1
2,5
0
0
0,01
200
400
600
800
1000
1200
1
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
I C
=
150
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
300
250
200
150
100
50
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,82
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,00E-02
8,76E-02
3,17E-01
2,26E-01
1,07E-01
3,28E-02
7,83E+00
1,08E+00
9,41E-02
2,94E-02
6,25E-03
1,16E-03
Copyright Vincotech
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datasheet
Boost Sw.Inv.Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
300
250
200
150
100
50
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,82
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,00E-02
8,76E-02
3,17E-01
2,26E-01
1,07E-01
3,28E-02
7,83E+00
1,08E+00
9,41E-02
2,94E-02
6,25E-03
1,16E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
5
3
Eoff
Eoff
Eon
Eon
E
E
Eoff
Eoff
4
2,25
Eon
3
2
1
0
Eoff
Eoff
1,5
0,75
0
Eon
Eon
Eon
0
45
90
135
180
225
IC (A)
0
2
4
6
8
10
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
120
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
4
4
R gon
R goff
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
2,5
4
E
E
2
Erec
Erec
Erec
Erec
3
1,5
1
2
1
0
Erec
Erec
0,5
0
0
2
4
6
8
10
0
45
90
135
180
225
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
350
-5 / 15
4
V
V
Ω
350
-5 / 15
120
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(off)
0,1
0,1
td(on)
td(on)
tf
tf
tr
tr
0,01
0,01
0,001
0,001
0
2
4
6
8
10
0
45
90
135
180
225
IC (A)
Rg (Ω)
With an inductive load at
With an inductive load at
150
350
-5 / 15
4
°C
V
150
350
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
120
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
0,1
0,1
trr
trr
t
t
trr
trr
0,08
0,08
0,06
0,04
0,02
0
0,06
0,04
0,02
trr
trr
0
0
0
45
350
90
135
180
225
2
4
6
8
10
Rg on (Ω)
IC (A)
At
VCE
=
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
25 °C
VGE
=
=
-5 / 15
4
Tj:
VGE
I C
=
-5 / 15
120
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
17
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
16
12
Q
Q
Qr
Qr
Qr
Qr
12
9
8
4
6
3
Qr
Qr
0
0
0
0
45
90
135
180
225
2
4
6
8
10
Rg on (Ω)
IC (A)
350
-5 / 15
4
V
V
Ω
350
-5 / 15
120
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
250
250
IRM
IRM
I
I
200
200
IRM
IRM
150
100
50
150
100
50
IRM
IRM
0
0
0
0
2
4
6
8
10
Rgo n (Ω)
45
90
135
180
225
IC (A)
350
-5 / 15
4
V
V
Ω
350
-5 / 15
120
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
18
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
20000
16000
diF/dt
diF/
dt
t
i
t
dirr/dt
dirr
/
dt
i
16000
12000
8000
4000
12000
8000
4000
0
0
0
0
2
4
6
8
10
Rg on (Ω)
45
350
90
135
180
225
IC (A)
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
-5 / 15
4
:
Tj
-5 / 15
120
:
Tj
125 °C
150 °C
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
500
I
IC MAX
400
I
300
200
100
0
I
V
0
150
300
450
600
750
VC E (V)
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
19
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
4 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-5
V
VGE (0%) =
-5
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
120
207
V
350
120
72
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
t f =
350
120
20
V
VC (100%) =
I C (100%) =
350
120
14
V
A
A
ns
tr
=
ns
Copyright Vincotech
20
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
350
120
181
70
V
120
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
8,61
μC
A
ns
t rr
=
Copyright Vincotech
21
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
12
8
Eoff
Eoff
Eoff
Eoff
E
E
9
6
Eoff
Eoff
6
3
0
4
2
0
Eon
Eon
Eon
Eon
Eon
Eon
0
35
70
105
140
175
0
2
4
6
8
10
Rg (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
350
V
V
Ω
Ω
350
-5 / 15
90
V
V
A
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
2
2,5
Erec
Erec
E
E
2
Erec
Erec
1,5
1,5
1
1
0,5
0
Erec
Erec
0,5
0
0
2
4
6
8
10
0
35
70
105
140
175
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
350
-5 / 15
2
V
V
Ω
350
-5 / 15
90
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
22
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(off )
t
t
td(off )
td(on)
tf
0,1
td(on)
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
2
4
6
8
10
0
35
70
105
140
175
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
150
350
-5 / 15
2
°C
V
150
°C
V
Tj =
Tj =
350
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
90
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
0,16
0,12
trr
trr
t
t
trr
trr
0,12
0,09
0,08
0,04
0
0,06
0,03
trr
trr
0
0
0
35
350
70
105
140
175
2
4
6
8
10
Rg on (Ω)
IC (A)
V
V
Ω
350
V
V
A
At
VCE
=
At
VCE =
25 °C
25 °C
-5 / 15
2
-5 / 15
90
VGE
=
=
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
23
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
12
8
Q
Q
Qr
Qr
Qr
Qr
9
6
6
3
4
2
Qr
Qr
0
0
0
0
35
70
105
140
175
2
4
6
8
10
Rg on (Ω)
IC (A)
350
-5 / 15
2
V
V
Ω
350
-5 / 15
90
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
160
160
IRM
IRM
I
I
120
120
IRM
IRM
IRM
IRM
80
40
80
40
0
0
0
0
2
4
6
8
10
Rgo n (Ω)
35
70
105
140
175
IC (A)
350
-5 / 15
2
V
V
Ω
350
-5 / 15
90
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
24
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
12000
12000
d
iF/dt
d
iF/
dt
t
i
t
i
dirr/dt
dirr
/
dt
9000
6000
3000
9000
6000
3000
0
0
0
0
2
4
6
8
10
Rg on (Ω)
35
350
70
105
140
175
IC (A)
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
-5 / 15
2
:
Tj
-5 / 15
90
:
Tj
125 °C
150 °C
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
375
I
IC MAX
300
I
225
150
75
I
V
0
0
150
300
450
600
750
VC E (V)
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
2
2
Ω
Copyright Vincotech
25
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
2 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-5
V
VGE (0%) =
-5
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
90
V
350
90
V
A
A
397
ns
94
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
t f =
350
90
V
VC (100%) =
I C (100%) =
350
90
9
V
A
A
73
ns
tr
=
ns
Copyright Vincotech
26
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
350
90
V
90
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
5,86
μC
130
86
A
t rr
=
ns
Copyright Vincotech
27
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
Ordering Code
10-FY07NIB200S504-LH46F58
10-FY07NIB200S504-LH46F58-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
Function
Ph
31,45
28,75
26,05
23,35
20,65
17,95
6,8
1
2
0
Ph
Ph
3
4
0
0
Ph
5
0
Ph
6
0
Ph
7
0
Therm1
Therm2
DC+
DC+
8
0
0
9
0
28,5
28,5
10
2,7
11
12
13
14
15
16
17
5,4
8,1
28,5
28,5
28,5
28,5
28,5
28,5
28,5
DC+
DC+
DC+
DC+
GND
GND
GND
10,8
13,5
20,85
23,55
26,25
18
19
20
21
22
28,95
31,65
39
28,5
28,5
28,5
28,5
28,5
GND
GND
DC-
DC-
DC-
41,7
44,4
23
24
25
26
27
28
29
30
31
32
33
47,1
49,8
52,5
44,5
44,5
8
28,5
28,5
28,5
25,5
22,5
16,5
13,5
5,5
DC-
DC-
DC-
S12
G12
G11
S11
G13
S13
S14
G14
8
14,05
15,55
41,8
41,8
2,5
10,6
7,6
Copyright Vincotech
28
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
650 V
200 A
200 A
150 A
100 A
100 A
Buck Switch
Buck Diode
D11, D12
T13, T14
D13, D14
D15, D16
Rt
FWD
IGBT
FWD
FWD
NTC
650 V
650 V
650 V
650 V
Boost Switch
Boost Diode
Boost Sw.Inv.Diode
Thermistor
Copyright Vincotech
29
16 May. 2019 / Revision 2
10-FY07NIB200S504-LH46F58
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY07NIB200S504-LH46F58-D2-14
16 May. 2019
Correction of Ic/If values
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
16 May. 2019 / Revision 2
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