10-FY12S2A040SH-L868L48 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-FY12S2A040SH-L868L48 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总22页 (文件大小：10172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY12S2A040SH-L868L48
datasheet
flowBOOST 1 symmetric dual
1200 V / 40 A
Features
flow 1 12 mm housing
● Symmetric Boost for 1500 Vdc applications
● Latest IGBT technology for high speed frequencies
● Low inductance package
● Integrated NTC
● Cost efffective alternative to L869L08
● Same package and pin-out as L869L08
Target applications
● Solar Inverters
● 10-FY12S2A040SH-L868L48
Copyright Vincotech
1
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
1200
43
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
111
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
28
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
92
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
66
A
Tj = Tjmax
87
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
25
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
200
200
37
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
2
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
ByPass Diode
VRRM
Peak repetitive reverse voltage
1600
38
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
47
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
9,6
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
3
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0015
40
25
5,3
5,8
6,3
V
25
1,78
1,95
2,29
2,42(1)
15
0
V
125
1200
0
25
25
5
µA
nA
Ω
20
120
None
2330
150
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 960 V
15
40
185
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,86
K/W
25
25,6
24,64
24,48
16,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
18,24
18,56
236,64
300,48
315,84
41,88
82,25
97,94
1,11
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
700
40
tf
125
150
25
ns
QrFWD=0,108 µC
QrFWD=0,079 µC
QrFWD=0,08 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,24
mWs
mWs
1,26
1,75
Eoff
125
150
2,84
3,1
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,43
1,74
1,84
20
1,6(1)
400
VF
IR
Forward voltage
20
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
160
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,09
K/W
25
13,46
13,33
13,38
11,28
11,68
11,81
0,108
0,079
0,08
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2497 A/µs
di/dt=2455 A/µs
Qr
Recovered charge
0/15
700
40
125
150
25
μC
0,025
0,013
0,013
3711
3575
3448
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,12
1,03
1,02
1,1(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,87
K/W
ByPass Diode
Static
25
1,15
1,1
1,1(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Vr = 1600 V
µA
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,5
K/W
Copyright Vincotech
6
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
7
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
125
125
VGE
:
7 V
8 V
9 V
100
75
50
25
0
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
40
10
-1
30
20
10
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,856
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,40E-01
4,53E-01
1,58E-01
7,23E-02
3,25E-02
8,31E-01
1,26E-01
3,84E-02
8,41E-03
8,46E-04
Copyright Vincotech
8
16 Oct. 2020 / Revision 1
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
9
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10-FY12S2A040SH-L868L48
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,093
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,73E-02
1,05E-01
5,77E-01
1,79E-01
1,16E-01
6,86E-02
2,96E+00
4,20E-01
8,31E-02
2,65E-02
5,49E-03
1,07E-03
Copyright Vincotech
10
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,869
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,65E-02
1,70E-01
6,15E-01
6,94E-01
2,16E-01
1,19E-01
8,90E+00
1,08E+00
1,58E-01
5,21E-02
6,16E-03
1,06E-03
Copyright Vincotech
11
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datasheet
ByPass Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,5
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
9,44E-02
3,47E-01
7,44E-01
2,04E-01
1,11E-01
2,48E+00
3,51E-01
7,63E-02
1,21E-02
1,25E-03
Copyright Vincotech
12
16 Oct. 2020 / Revision 1
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datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
13
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datasheet
Boost Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eoff
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
Ω
125 °C
150 °C
700
0/15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
14
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datasheet
Boost Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
tf
-1
10
-1
10
td(on)
tr
tr
td(on)
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
8
°C
V
150
700
0/15
40
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
125 °C
150 °C
700
0/15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
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datasheet
Boost Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
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16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Boost Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Boost Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-FY12S2A040SH-L868L48
10-FY12S2A040SH-L868L48-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-In2
S25
52,5
50,6
47,6
43,8
35,9
31,3
21,2
16,6
8,7
0
7,6
6,2
6,2
0
2
3
G25
4
Boost-2
DC+In2
Boost+2
Boost+1
DC+In1
Boost-1
G15
5
6
6,5
6,5
0
7
8
9
6,2
6,2
7,6
0
10
11
12
13
14
15
4,9
1,9
S15
0
DC-In1
G17
10,1
10,1
0
21
24
S17
25,8
DC-
Boost1
DC-
16
0
28,5
Boost1
N1
17
18
19
20
21
22
23
24
25
26
9,7
28,5
28,5
28,5
28,5
28,5
28,5
28,5
24
12,4
22,1
24,8
27,5
37,1
39,8
39,4
39,4
49,5
N1
DC+Boost
DC+Boost
DC+Boost
N2
N2
S27
21
G27
28,5
DC-
Boost2
DC-
27
49,5
25,8
Boost2
Therm1
Therm2
28
29
52,5
52,5
28,5
21,3
Copyright Vincotech
20
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Pinout
DC+Boost
19,20,21
D18
D28
DC+In2
DC+In1
8
5
D17
D47
D27
Boost+2
Boost+1
7
6
T27
T17
D57
G27
G17
13
25
S27
S17
14
24
N1
17,18
N2
22,23
T15
T25
D55
D45
D15
G25
G15
3
S25
10
S15
2
11
D25
Boost-2
Boost-1
4
9
D26
DC-In2
DC-In1
1
12
D16
15,16
DC-Boost1
26,27
DC-Boost2
Rt
Therm1
28
Therm2
29
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T17, T25, T27
D15, D17, D25, D27
D45, D47, D55 , D57
D16, D18, D26, D28
Rt
IGBT
FWD
1200 V
1200 V
1600 V
1600 V
40 A
20 A
18 A
28 A
Boost Switch
Boost Diode
Rectifier
Rectifier
Thermistor
Boost Sw. Protection Diode
ByPass Diode
Thermistor
Copyright Vincotech
21
16 Oct. 2020 / Revision 1
10-FY12S2A040SH-L868L48
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY12S2A040SH-L868L48-D1-14
16 Oct. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
16 Oct. 2020 / Revision 1
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