10-PY12PMA025SH01-P589A81Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PY12PMA025SH01-P589A81Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总29页 (文件大小：8850K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY12PMA025SH01-P589A81Y
datasheet
flowPIM 1
1200 V / 25 A
Topology features
flow 1 12 mm housing
● Kelvin Emitter for improved switching performance
● Open Emitter configuration
● Temperature sensor
● Converter+Brake+Inverter
● Tandem diode
Component features
● Easy paralleling
● High speed switching
● Low switching losses
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Schematic
Extra features
● Tandem FWD concept
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PY12PMA025SH01-P589A81Y
Copyright Vincotech
1
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
31
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
75
A
Ptot
94
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1300
31
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
91
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
22
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
65
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
19
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
46
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
46
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
56
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
7,96
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
3
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00085 25
25
5,3
5,8
6,3
V
V
1,78
1,98
2,38
2,48
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
25
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
2,4
µA
nA
Ω
20
25
120
None
1430
115
75
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 960 V
15
25
115
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,01
K/W
25
43,2
43,68
43,84
18,72
20
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
20,64
138,24
192,16
202,88
46,38
96,22
108,98
0,87
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
25
tf
125
150
25
ns
QrFWD=0,784 µC
QrFWD=1,59 µC
QrFWD=1,86 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,3
mWs
mWs
1,47
1,04
Eoff
125
150
1,69
1,92
Copyright Vincotech
4
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
3,19
3,01
2,93
3,84(1)
VF
IR
Forward voltage
30
125
150
V
Reverse leakage current
Thermal
Vr = 1300 V
25
1,6
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,04
K/W
25
13,29
18,55
19,84
78,2
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
130,09
149,56
0,784
1,59
ns
di/dt=1369 A/µs
di/dt=1305 A/µs
di/dt=1250 A/µs
Qr
Recovered charge
±15
600
25
125
150
25
μC
1,86
0,277
0,561
0,656
479,77
174,01
151,66
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
15
25
5,3
5,8
6,3
V
V
25
1,58
1,87
2,14
2,21
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
120
None
890
30
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
20
0
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,45
K/W
25
86,8
86,6
88
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
24,2
27,8
28,6
193,6
256
tr
125
150
25
Rgon = 32 Ω
Rgoff = 32 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
257,8
76,6
102,03
110,95
0,95
1,29
1,38
0,824
1,17
1,27
±15
600
15
tf
125
150
25
ns
QrFWD=1,38 µC
QrFWD=2,27 µC
QrFWD=2,53 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,35
1,79
1,77
1,73
2,05(1)
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
2,7
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,07
K/W
25
10,02
11,64
12,03
323,77
488,88
537,51
1,38
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=611 A/µs
di/dt=482 A/µs
di/dt=484 A/µs
Qr
Recovered charge
±15
600
15
125
150
25
2,27
μC
2,53
0,581
0,965
1,08
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
45,97
45,75
44,44
(dirf/dt)max
125
150
Copyright Vincotech
7
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,988
0,899
1,21(1)
1,1(1)
VF
IR
Forward voltage
13
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,25
K/W
Thermistor
Static
R
Rated resistance
Deviation of R25
25
22
kΩ
%
R25 = 22 kΩ
25
-5
5
ΔR/R
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
100
-12
14
P
d
200
2
mW
mW/K
K
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
70
70
VGE
:
7 V
8 V
60
50
40
30
20
10
60
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
2
4
6
8
10
2
4
6
8
10
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
25
10
0
20
15
10
5
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,009
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,44E-02
2,46E-01
4,48E-01
1,38E-01
5,48E-02
3,85E-02
1,03E+00
1,79E-01
5,38E-02
1,04E-02
1,66E-03
8,73E-04
Copyright Vincotech
9
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,043
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,84E-02
9,18E-02
2,98E-01
4,70E-01
1,65E-01
3,09E+01
1,45E+00
1,55E-01
4,05E-02
4,35E-03
Copyright Vincotech
11
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,453
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,02E-01
3,31E-01
5,63E-01
2,92E-01
8,13E-02
8,53E-02
1,17E+00
1,69E-01
5,65E-02
1,03E-02
1,50E-03
4,00E-04
Copyright Vincotech
12
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
2,066
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,09E-02
1,55E-01
7,75E-01
5,33E-01
3,54E-01
1,97E-01
4,26E+00
5,03E-01
7,89E-02
2,68E-02
5,03E-03
9,09E-04
Copyright Vincotech
14
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,254
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
8,00E-02
1,56E-01
6,95E-01
2,23E-01
9,97E-02
5,22E+00
4,18E-01
8,82E-02
3,07E-02
5,99E-03
Copyright Vincotech
15
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eoff
0
10
20
30
40
50
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
25
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
25
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
td(on)
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
25
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
25
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
25
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
5,0
IRM
2,5
0,0
0
0
10
20
30
40
50
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
25
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1750
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1500
1250
1000
750
500
250
0
0
10
20
30
40
50
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
25
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
60
IC MAX
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
20
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
32
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
td(off)
-1
10
tr
tf
td(on)
-1
10
tr
-2
10
10
-2
10
-3
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,2
1,0
0,8
0,6
0,4
0,2
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12,5
10,0
7,5
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
700
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
500
250
0
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
Copyright Vincotech
24
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY12PMA025SH01-P589A81Y
10-PY12PMA025SH01-P589A81Y-/7/
10-PY12PMA025SH01-P589A81Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
Lot
Serial
SSSS
Text
UL
LLLLL
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
G27
52,55
47,7
44,8
37,8
37,8
35
2
0
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Inv
DC+Inv
Therm1
Therm2
DC-3
G15
3
0
4
0
5
2,8
0
6
7
35
2,8
0
8
28
9
25,2
22,4
19,6
16,8
14
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
0
0
S15
0
DC-2
G13
11,2
8,4
0
0
S13
5,6
0
DC-1
G11
2,8
0
0
0
S11
0
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
25
16,9
8,6
2,8
Ph1
2,8
G12
7,5
S12
14,5
17,3
22
Ph2
G14
S14
29
Ph3
31,8
36,5
43,5
52,55
52,55
52,55
52,55
G16
S16
ACIn1
ACIn2
ACIn3
Br
DC-Br
Copyright Vincotech
27
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Pinout
DC+Rect
4,5
DC+Inv
6,7
D11-1
D13-1
D13-2
D15-1
D15-2
T12
T14
T16
G16
26
D27
G14
23
G12
20
D32
D34
D36
D11-2
S14
S16
27
S12
21
AcIn1
28
24
Ph1
19
Br
31
AcIn2
29
Ph2
22
AcIn3
30
Ph3
25
D12-1
D14-1
D14-2
D16-1
D16-2
D31
D33
D35
T27
T11
T13
T15
G27
1
G11
17
G13
14
G15
11
D12-2
S13
S15
S11
18
15
12
Rt
DC-2
13
DC-3
10
DC-1
16
DC-Br
32
DC-Rect
2,3
Therm1
8
Therm2
9
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
25 A
Inverter Switch
T15, T16
D11-1, D11-2, D12-1,
D12-2, D13-1, D13-2,
D14-1, D14-2, D15-1,
D15-2, D16-1, D16-2
T27
FWD
1300 V
30 A
Inverter Diode
IGBT
FWD
1200 V
1200 V
15 A
10 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
NTC
1600 V
35 A
Rectifier Diode
Thermistor
Rt
Copyright Vincotech
28
03 Aug. 2022 / Revision 2
10-PY12PMA025SH01-P589A81Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY12PMA025SH01-P589A81Y-D1-14
10-PY12PMA025SH01-P589A81Y-D2-14
3 Mar. 2020
3 Aug. 2022
Vf condition of Rectifier Diode changed according to chip
datasheet
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
03 Aug. 2022 / Revision 2
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High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ074PA075SM-L625F08Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07ANA100RG02-LK39L88Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
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