10-TY12NMB030SM-L394L08 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-TY12NMB030SM-L394L08 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总18页 (文件大小：3167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-TY12NMB030SM-L394L08
10-PY12NMB030SM-L394L08Y
datasheet
flow3xNPFC 1
1200 V / 30 A
Features
flow 1 12 mm housing
● Very high switching speed
● Very compact module
● 3 phases in one housing
Solder pin
Press-fit pin
Schematic
Target applications
● Industrial Drives
● Power Supply
● UPS
Types
● 10-TY12NMB030SM-L394L08
● 10-PY12NMB030SM-L394L08Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
29
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
60
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
26
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
92
A
Tj = Tjmax
61
W
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
36
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
11,89
mm
mm
mm
Solder pin
Clearance
Press-fit pin
min. 12,7
> 200
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0003 25
3,3
4
4,7
V
V
25
1,69
1,92
2,22
15
0
30
125
650
0
25
25
40
µA
nA
Ω
20
120
none
2100
7,7
Cies
f = 1 Mhz
0
25
25
25
pF
Cres
Qg
Reverse transfer capacitance
Gate charge
15
520
30
70
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,57
K/W
Dynamic
25
17
18
18
7
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
9
9
Rgon = 8 Ω
Rgoff = 8 Ω
ns
90
104
107
8
10
11
td(off)
Turn-off delay time
Fall time
15 / 0
350
30
tf
125
150
25
0,416
0,407
0,419
Qr
Qr
= 0,3 μC
= 0,3 μC
FWD
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
FWD
Qr
FWD
= 0,3 μC
mWs
25
0,140
Eoff
125
150
0,210
0,240
Copyright Vincotech
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,43
1,74
1,85
1,6
VF
IR
125
150
Forward voltage
20
V
Reverse leakage current
1200
25
400
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,56
K/W
Dynamic
25
20
18
17
IRRM
125
150
25
Peak recovery current
A
18
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
19
19
ns
di/dt = 3525 A/μs
di/dt = 3125 A/μs
di/dt = 3075 A/μs
0,254
0,270
0,266
0,026
0,033
0,033
2663
1607
1656
15 / 0
350
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Buck Diode
Static
25
1,48
1,40
1,37
1,92
1,6
VF
IR
125
150
Forward voltage
30
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Copyright Vincotech
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B(25/100)
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
tp
=
250
#VALUE!
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
V
125 °C
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
V
125 °C
=
1,57
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,66E-02
2,00E-01
6,54E-01
3,77E-01
1,51E-01
1,13E-01
1,73E+00
2,58E-01
5,93E-02
1,31E-02
2,99E-03
3,69E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C =
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,56
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
6,74E-02
1,50E-01
8,23E-01
2,55E-01
1,66E-01
9,79E-02
2,96E+00
4,20E-01
8,31E-02
2,65E-02
5,49E-03
1,07E-03
Copyright Vincotech
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10-PY12NMB030SM-L394L08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
=
1,92
K/W
FWD thermal model values
R (K/W)
τ (s)
9,41E-02
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic
as a function of temperature
R = f(T)
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datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
15 / 0
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
15 / 0
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
15 / 0
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
15 / 0
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
15 / 0
8
°C
V
Tj =
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
15 / 0
30
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
t
t
25 °C
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
15 / 0
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
15 / 0
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
=
=
=
350
15 / 0
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
15 / 0
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
=
=
=
350
15 / 0
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
15 / 0
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
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Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
25 °C
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
15 / 0
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
350
15 / 0
30
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
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Boost Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
350
30
104
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
V
350
30
V
A
A
tdoff
=
ns
tdon
=
18
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
30
V
VC (100%) =
I C (100%) =
350
30
9
V
A
A
10
ns
tr
=
ns
Copyright Vincotech
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Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
30
V
I F (100%) =
Q r (100%) =
30
0
A
A
μC
18
A
trr
=
19
ns
Copyright Vincotech
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datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
with thermal paste 12mm housing with solder pins
without thermal paste 12mm housing with Press-fit pins
with thermal paste 12mm housing with Press-fit pins
Ordering Code
10-TY12NMB030SM-L394L08
10-TY12NMB030SM-L394L08-/3/
10-PY12NMB030SM-L394L08Y
10-PY12NMB030SM-L394L08Y-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
2,8
0
Function
DC+2
53
1
2
53
DC+2
N3
3
4
46,5
43,7
37,2
34,4
27,9
25,1
18,6
15,8
0
0
N3
5
0
DC-2
DC-2
N2
6
0
7
0
L394L08
8
0
N2
9
0
DC+1
DC+1
10
0
11
12
13
9,3
6,5
0
0
0
0
N1
N1
DC-1
14
15
16
17
18
19
20
21
22
0
0
2,8
29
29
29
29
29
29
29
29
DC-1
L1
L394L08Y
2,8
22,35
25,15
33,2
36
L1
L2
L2
L3
L3
50
NTC1
NTC2
53
23
24
25
26
27
28
29
30
31
44,25
44,25
44,25
25,95
25,95
25,95
8,35
12,8
9,8
G5
E5
G6
G3
E3
G4
G1
E1
G2
6,8
10,5
7,5
4,5
12,8
9,8
6,8
8,35
8,35
Copyright Vincotech
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datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1, T2, T3, T4, T5,
T6
IGBT
650 V
30 A
20 A
30 A
Boost Switch
Boost Diode
Buck Diode
Thermistor
D1, D2, D3, D4, D5,
D6
FWD
FWD
NTC
1200 V
650 V
D7, D8, D9, D10,
D11, D12
NTC
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of Buck Diode
Change of Boost Diode static values
4, 9
2, 4, 8
10-xY12NMB030SM-L394L08x-D2-14
11 Jan. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
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Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
11 Jan. 2019 / Revision 2
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