20-1B12IPA015SC-L579F09 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 20-1B12IPA015SC-L579F09 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总15页 (文件大小：3214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20-1B12IPA015SC-L579F09
datasheet
flowIPM 1B
1200 V / 15 A
Features
flow1B 17 mm housing
Power
● Three Phase Inverter
● Emitter Shunts
Gate Driver
● Booststrap circuit
● Overcurrent protection
● Undervoltage lockout
NTC
● Temperature sensor
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 20-1B12IPA015SC-L579F09
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
12
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj ≤ 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
45
A
31
W
V
±20
10
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
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20-1B12IPA015SC-L579F09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
11
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
30
A
Tj = Tjmax
19
W
°C
Tjmax
Maximum junction temperature
175
Gate Driver
VCC
Supply voltage
-0,5...+24
V
UH, UL, VH, VL,
WH, WL, FO, RST
Vin
Logic input voltage
Internal current limit
Junction Temperature
-0,5...Vcc+0,5
16,7
V
A
IMAX
Tjmax
125
°C
Inverter Shunt
IMAX
Ptot
Max DC current
Tc = 25 °C
9
A
Power dissipation
Tc = 105 °C
2,43
W
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
5,3
5,8
6,3
2,3
V
V
2,10
2,28
2,46
VCEsat
Collector-emitter saturation voltage
15
12
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
10
µA
nA
Ω
20
120
none
890
30
Cies
Cres
Qg
f = 1 Mhz
0
25
25
pF
Reverse transfer capacitance
Gate charge
20
#VALUE! #VALUE! 25
0,12
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
3,07
K/W
Dynamic
25
125
150
25
1480
1912
2007
19
td(on)
Turn-on delay time*
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
23
24
1508
2011
2119
79
Rgon = 16 Ω
Rgoff = 32 Ω
ns
td(off)
Turn-off delay time*
Fall time
0 / 15
600
11
tf
133
159
0,676
1,107
1,240
0,879
1,440
Qr
FWD
Qr
FWD
Qr
FWD
= 1,2 μC
= 2,2 μC
= 2,6 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,600
* times include gate driver propagation delay
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
150
1,93
1,91
1,90
2,3
3,5
VF
IR
Forward voltage
12
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
4,92
K/W
Dynamic
25
12
13
14
IRRM
125
150
25
Peak recovery current
A
245
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
394
437
ns
di/dt = 730 A/μs
di/dt = 539 A/μs
di/dt = 478 A/μs
1,226
2,228
2,557
0,453
0,829
0,965
80
0 / 15
600
11
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
42
39
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Gate Driver*
Static
Vcc
VPOR
IMAX
Iq
Recommended supply voltage
Power on reset trip voltage
Internal current limit
13,5
4,0
15
5,5
16,7
3
20
7,5
20
V
V
13,3
A
Quiescent supply current
Logic "1" input voltage
4,5
4
mA
V
VIH
VIL
2,2
0,6
0,6
0
3
UH, UL, VH,
VL, WH, WL, RST
V
Logic "0" input voltage
1,5
1
2,1
1,4
0,01
500
0,95
2,1
4
Logic "1" input current
Iin
Vin = 5 V
Vin = 0 V
mA
mA
ns
V
H
IinL
Logic "0" input current
0
UH, UL, VH, VL, WH,
WL, FO (in), RST (pulse)
tFilt
Input signal filter time
80
200
VoutFAULTH
VinFAULTH
VinFAULTL
VUVreset
VUVtrip
Logic "1" FAULT output**
Logic "1" FAULT input treshold voltage**
Logic "0" FAULT input treshold voltage**
Under voltage reset voltage
Under voltage trip voltage
0,6
2,2
10
1,5
3
V
V
10,8
11,3
11,6
12,1
V
10,5
V
VUVhysteresis
Under voltage hysteresis voltage
0,2
0,5
0,8
V
tUVfilt
tUVfilt
tUVfilt
Under voltage filter time
Internal dead time
4
8
16
µs
ns
ns
Delay matching, high side turn-on and low side turn off
Delay matching, low side turn-on and high side turn off
-100
-20
80
300
400
Internal dead time
180
*
For more information see Mitshubishi's M81738FP datasheet. The recommended minimum input pulse width is 2.12 µs.
** FAULT active low with pull up resistor to Vcc.
Inverter Shunt
R
Resistance
30
mΩ
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B(25/100)
B-value
K
Vincotech NTC Reference
B
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
16
16
VGE
:
I
13
V
V
V
V
V
V
I
14
15
16
17
18
12
8
12
8
4
4
0
0
0
0
0,5
1
1,5
2
2,5
3
0,5
1
1,5
2
2,5
3
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
13 V to 18 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Transient thermal impedance as function of pulse duration
Safe operating area
I C = f(VCE
)
Z th(j-s) = f(tp)
100
1
10
1ms
100µs
10µs
10ms
I
I
100ms
DC
Z
Z
10
100
1
0,5
10-1
0,1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0,01
10-5
10-4
10-3
10-2
10-1
100
101
102
1
10
100
1000
10000
tp(s)
V
(V)
C E
D =
R th(j-s)
tp / T
D =
single pulse
80
=
3,07
K/W
Ts
=
ºC
VGE
=
IGBT thermal model values
±15
V
Tj =
Tjmax
R (K/W)
τ (s)
1,26E-01
4,34E-01
1,94E+00
4,50E-01
1,19E-01
1,14E+00
2,04E-01
6,00E-02
6,48E-03
9,59E-04
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
50
40
30
20
10
0
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
4,92
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
1,83E-01
4,86E-01
2,86E+00
7,18E-01
5,14E-01
1,52E-01
2,10E+00
2,84E-01
6,82E-02
1,40E-02
3,30E-03
6,79E-04
Thermistor Characteristics
figure 1.
Typical NTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
Erec = f(I c)
E = f(I C
)
3
1,5
Eon
Eoff
Eon
Eoff
E
Erec
Erec
E
2,5
1,2
2
1,5
1
0,9
0,6
0,3
0
Eon
Eoff
Erec
0,5
0
0
5
10
15
20
25
0
5
10
15
20
25
IC (A)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
=
600
0 / 15
16
V
V
Ω
Ω
Tj:
VCE
=
=
=
600
0 / 15
16
V
V
Ω
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
VGE
R gon
R goff
R gon
32
figure 3.
IGBT
figure 4.
FWD
Typical switching times as a function of collector current
Typical reverse recovery time as a function of collector current
t = f(I C
)
trr = f(I C
)
0,6
10
trr
trr
t
td(off)
td(on)
t
E
0,48
1
0,36
0,24
0,12
0,1
tf
trr
tr
0,01
0
0,001
0
5
10
15
20
25
0
5
10
15
20
25
IC (A)
IC(A)
At
VCE
=
600
V
V
Ω
With an inductive load at
25 °C
Tj =
150
600
0 / 15
16
°C
V
VGE
R gon
=
=
0 / 15
16
Tj:
125 °C
150 °C
VCE
=
=
=
=
VGE
R gon
R goff
V
Ω
Ω
32
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datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Typical recovered charge as a function of collector current
Typical peak reverse recovery current current as a function of collector current
Q r = f(I C
)
I RM = f(I C
)
4
16
IRM
IRM
Q
Qr
Qr
I
IRM
3
12
2
1
8
4
Qr
0
0
0
0
5
10
15
20
25
5
10
15
20
25
IC (A)
IC (A)
At
VCE
VGE
R gon
=
600
0 / 15
16
V
V
Ω
At
VCE
=
600
0 / 15
16
V
V
Ω
25 °C
25 °C
=
Tj:
VGE
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
R gon
figure 7.
FWD
figure 7.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Reverse bias safe operating area
di F/dt, di rr/dt = f(I C
)
I C = f(VCE
)
36
1000
diF/dt
dir r/dt
IC MAX
I
t
i
30
800
I
24
18
12
6
600
400
200
I
V
0
0
0
0
300
600
900
1200
1500
VC E (V)
5
10
15
20
25
IC (A)
At
VCE
=
600
V
V
Ω
At
25 °C
VGE
R gon
=
=
0 / 15
16
Tj =
175
°C
Ω
Tj:
125 °C
150 °C
R gon
R goff
=
=
16
32
Ω
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datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
16 Ω
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t ( s)
t ( s)
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
11
V
600
11
V
A
A
tdoff
=
2011
ns
tdon
=
1912
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t ( s)
t ( s)
VC (100%) =
I C (100%) =
600
11
V
VC (100%) =
I C (100%) =
600
11
V
A
A
tf
=
133
ns
tr
=
23
ns
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datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t ( s)
t ( s)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
11
V
I F (100%) =
Q r (100%) =
11
A
A
2,23
μC
13
A
trr
=
394
ns
Copyright Vincotech
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20-1B12IPA015SC-L579F09
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
20-1B12IPA015SC-L579F09
20-1B12IPA015SC-L579F09-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
0
0
0
0
0
0
0
0
0
0
Function
WH
45,1
42,4
39,7
37
2
WL
3
RW+
RW-
GND
VCC
VH
4
5
34,3
31,6
28,9
26,2
23,5
20,8
6
7
8
VL
9
RV+
RV-
10
11
12
13
18,1
15,4
12,7
0
0
0
RST
FO
UH
14
15
16
17
18
19
20
21
22
23
24
25
26
10
7,3
0
0
UL
RU+
RU-
4,6
0
1,9
0
THERM1
EU
1,45
18,15
33,6
37,9
32,3
9,3
9,3
9,3
18,75
26,1
EV
EW
DC+3
W
22,35 19,35
DC+2
V
16,15
6,05
0
26,1
18,75
26,1
DC+1
U
Pin Descriptions
Power pin descriptions
Function
Pin
1
Function
Description
Description
WH
WL
Signal input for high-side W phase
Signal input for low-side W phase
W phase shunt +
Pin
18
19
20
21
22
23
24
25
26
Open emitter U phase
Open emitter V phase
Open emitter W phase
Inverter input DC+
Output W phase
2
EU
EV
3
RW+
RW-
GND
VCC
VH
4
W phase shunt -
EW
5
Signal ground
DC+3
W
6
Driver circuit supply voltage
Signal input for high-side V phase
Signal input for low-side V phase
V phase shunt +
Inverter input DC+
Output V phase
7
DC+2
V
8
VL
Inverter input DC+
Output U phase
9
RV+
RV-
DC+1
U
10
11
12
13
14
15
16
17
V phase shunt -
RST
FO
Fault latch reset (min. 500ns pulse)
Fault latch input/output (negative logic, open drain)
Signal input for high-side U phase
Signal input for low-side U phase
U phase shunt +
UH
UL
RU+
RU-
U phase shunt -
THERM1
Temperature sensor connector
Copyright Vincotech
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20-1B12IPA015SC-L579F09
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
12 A
Inverter Switch
Inverter Diode
D11, D12, D13, D14,
D15, D16
FWD
1200 V
12 A
9 A
SH1, SH2, SH3
Rt
Shunt
NTC
Inverter Shunt
Thermistor
Copyright Vincotech
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20-1B12IPA015SC-L579F09
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1B packages see vincotech.com website.
Package data
Package data for flow 1B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
20-1B12IPA015SC-L579F09-D3-14
26 July. 2019
Modified remark on Gate Driver, VoutFAULTH condition
5
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
15
26 . 2019 / Revision 3
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