20-FB12IPA008SC-L239C08Y [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
20-FB12IPA008SC-L239C08Y
型号: 20-FB12IPA008SC-L239C08Y
厂家: VINCOTECH    VINCOTECH
描述:

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

文件: 总18页 (文件大小:3859K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
flowIPM 1B-CI  
1200 V / 8 A  
Features  
flow 1B 17 mm and 12 mm housing  
Power  
3 Phase Inverter  
3 Phase Input Rectifier  
● Open emitter or Emitter Shunt  
Gate Driver  
● Booststrap circuit  
● Overcurrent protection  
● Undervoltage lockout  
NTC  
with solder pins 17 mm  
with Press-fit pins 12mm  
● Temperature sensor  
Schematic  
Target applications  
● Embedded Drives  
● Industrial Drives  
Types  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Rectifier Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak Repetitive Reverse Voltage  
1600  
13  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 45 °C  
Ts = 80 °C  
150  
110  
15  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum Junction Temperature  
150  
Copyright Vincotech  
1
26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
Collector-emitter voltage  
1200  
9
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Ptot  
VGES  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
24  
A
23  
W
V
±20  
tSC  
Tj ≤ 150 °C  
VGE = 15 V  
10  
µs  
Short circuit ratings  
VCC  
800  
V
Tjmax  
Maximum Junction Temperature  
175  
°C  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
1200  
8
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
15  
A
Tj = Tjmax  
12  
W
°C  
Tjmax  
Maximum Junction Temperature  
150  
Gate Driver  
Supply voltage  
VCC  
Vin  
24  
V
V
U-Hin, U-Lin, V-Hin, V-Lin,  
W-Hin, W-Lin FAULT, RESET  
Logic input voltage  
Internal current limit  
Junction Temperature  
-0,5...Vcc+0,5  
I MAX  
Tjmax  
5
A
125  
°C  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Shunt  
DC forward current  
I F  
9
A
Power dissipation  
Ptot  
2,43  
W
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
Isolation voltage  
-40…(Tjmax - 25)  
Visol  
DC Test Voltage  
tp = 2 s  
4000  
min. 12,7  
V
Creepage distance  
mm  
mm  
Clearance  
Press-fit pins / solder pins  
min. 12,7 / 12,69  
> 200  
Comparative Tracking Index  
CTI  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Rectifier Diode  
Static  
25  
125  
1,04  
0,97  
1,11  
10  
VF  
Ir  
Forward voltage  
7
V
Reverse leakage current  
1600  
25  
µA  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
4,56  
K/W  
Inverter Switch  
Static  
VGE(th)  
VCEsat  
ICES  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
VGE = VCE  
0,00015 25  
5,3  
5,8  
6,3  
V
V
25  
150  
1,58  
1,85  
2,25  
2,07  
15  
0
8
1200  
0
25  
25  
1
µA  
nA  
Ω
IGES  
rg  
20  
120  
none  
490  
30  
Cies  
Input capacitance  
f = 1 MHz  
0
25  
25  
pF  
Cres  
Reverse transfer capacitance  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
4,22  
K/W  
Dynamic  
25  
125  
25  
125  
25  
125  
25  
125  
25  
125  
25  
125  
1484  
1909  
12  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time*  
Rise time  
16  
ns  
Vcc = 15 V  
1436  
1916  
77  
Turn-off delay time*  
Fall time  
600  
8
136  
0,399  
0,630  
0,520  
0,844  
QrFWD = 1 μC  
QrFWD = 1,7 μC  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
* times include gate driver deadtime  
mWs  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
125  
1,65  
1,61  
VF  
Ir  
Forward voltage  
7,5  
V
Reverse leakage current  
1200  
25  
250  
µA  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
5,69  
K/W  
Dynamic  
25  
125  
25  
125  
25  
125  
25  
125  
25  
125  
8
8
IRRM  
Peak recovery current  
Reverse recovery time  
Recovered charge  
A
320  
514  
0,975  
1,748  
0,433  
0,785  
56  
trr  
Qr  
ns  
di/dt = 336 A/μs  
di/dt = 481 A/μs  
15  
600  
8
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
37  
Inverter Shunt  
Resistance  
R
30  
mΩ  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Gate Driver*  
Static  
Vcc  
VPOR  
IMAX  
Iq  
Recommended supply voltage  
Power on reset trip voltage  
Internal current limit  
13,5  
4,0  
15  
5,5  
16,7  
3
20  
7,5  
20  
V
V
13,3  
A
Quiescent supply current  
Logic "1" input voltage  
Logic "0" input voltage  
Logic "1" input current  
Logic "0" input current  
4,5  
4
mA  
V
VIH  
VIL  
2,2  
0,6  
0,6  
0
3
UH, UL, VH,  
VL, WH, WL, RST  
V
1,5  
1
2,1  
1,4  
0,01  
IinH  
IinL  
Vin = 5 V  
Vin = 0 V  
mA  
mA  
0
UH, UL, VH, VL, WH,  
WL, FO (in), RST (pulse)  
tFilt  
VoutFAULTH  
VinFAULTH  
VinFAULTL  
VUVreset  
VUVtrip  
Input signal filter time  
80  
200  
500  
0,95  
2,1  
4
ns  
V
Logic "1" FAULT output**  
Logic "1" FAULT input treshold voltage**  
Logic "0" FAULT input treshold voltage**  
Under voltage reset voltage  
Under voltage trip voltage  
Under voltage hysteresis voltage  
Under voltage filter time  
0,6  
2,2  
10  
1,5  
3
V
V
10,8  
11,3  
0,5  
8
11,6  
12,1  
0,8  
16  
V
10,5  
0,2  
4
V
VUVhysteresis  
tUVfilt  
V
µs  
ns  
ns  
Delay matching, high side turn-on and low side  
turn off  
tUVfilt  
Internal dead time  
-100  
-20  
80  
300  
400  
Delay matching, low side turn-on and high side  
turn off  
tUVfilt  
Internal dead time  
180  
*
For more information see Mitshubishi's M81738FP datasheet. The recommended minimum input pulse width is 2 µs.  
** FAULT active low with pull up resistor to Vcc.  
Copyright Vincotech  
6
26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Thermistor  
R
ΔR/R  
P
Rated resistance  
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1486 Ω  
-12  
+14  
200  
2
mW  
mW/K  
K
B(25/50)  
Tol. ±3%  
Tol. ±3%  
3950  
3998  
B(25/100)  
B-value  
K
Vincotech NTC Reference  
B
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Rectifier Diode Characteristics  
figure 1.  
Rectifier Diode  
figure 2.  
Rectifier Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
100  
D = 0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
D =  
R th(j-s)  
tp / T  
4,56  
T j:  
125 °C  
K/W  
Diode thermal model values  
R (K/W)  
τ (s)  
1,1300E-01  
2,5930E-01  
1,9540E+00  
1,7280E+00  
5,0510E-01  
8,9590E+00  
8,4330E-01  
1,0960E-01  
3,6370E-02  
3,4450E-03  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
I
I
tp  
=
250  
15  
μs  
25 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
V
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
Typical transfer characteristics  
IGBT  
figure 4.  
IGBT  
Transient Thermal Impedance as function of Pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
25 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
V
Tj:  
=
4,22  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
2,57E+00  
7,15E-01  
5,14E-01  
9,91E-02  
6,96E-02  
1,68E-02  
3,47E-03  
7,30E-04  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
100  
D = 0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
D =  
R th(j-s)  
tp / T  
5,69  
T j:  
125 °C  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
1,733E-01  
1,301E+00  
2,883E+00  
9,535E-01  
3,778E-01  
2,116E+00  
1,400E-01  
4,111E-02  
5,372E-03  
1,029E-03  
Thermistor Characteristics  
figure 1.  
Typical NTC characteristic  
Thermistor  
Typical Thermistor resistance values  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
FWD  
Typical switching energy losses as a function of collector current  
Typical reverse recovered energy loss as a function of collector current  
Erec = f(I c)  
E = f(I C  
)
E
E
25 °C  
125 °C  
25 °C  
With an inductive load at  
With an inductive load at  
VCE  
VCC  
VIN  
=
=
=
600  
15  
5
V
V
V
T j:  
VCE  
VCC  
VIN  
=
=
=
600  
15  
5
V
V
V
T j:  
125 °C  
figure 3.  
IGBT  
figure 4.  
FWD  
Typical switching times as a function of collector current  
Typical reverse recovery time as a function of collector current  
t = f(I C  
)
trr = f(I C  
)
t
t
E
At  
VCE  
=
600  
V
V
V
A
25 °C  
With an inductive load at  
Tj =  
125  
600  
15  
°C  
V
VCC  
=
=
=
15  
5
Tj:  
125 °C  
VCE  
=
=
=
VIN  
I C  
VCC  
VIN  
V
8
5
V
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Typical recovered charge as a function of collector current  
Typical peak reverse recovery current current as a function of collector current  
Q r = f(I C  
)
I RM = f(I C)  
Q
t
I
At  
VCE  
VCC  
VIN  
=
600  
15  
5
V
V
V
25 °C  
At  
VCE  
=
600  
15  
5
V
V
V
V
A
25 °C  
=
T j:  
125 °C  
VCC  
VIN  
=
=
=
=
T j:  
125 °C  
=
VGE  
I C  
15  
8
figure 7.  
FWD  
figure 8.  
IGBT  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Reverse bias safe operating area  
di F/dt,di rr/dt = f(I c)  
diF/dt  
t
t
i
dirr/dt  
IC MAX  
I
I
I
V
At  
VCE  
=
600  
15  
5
V
V
V
25 °C  
VCC  
VIN  
=
=
T j:  
125 °C  
At  
Tj =  
175  
°C  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Switching Characteristics  
General conditions  
T j  
V CC  
=
=
125 °C  
15 V  
Figure 1.  
IGBT  
Figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
VCE  
VIN  
IC  
IC  
VIN  
VCE  
tEoff  
tEon  
VIN (0%) =  
0
V
VIN (0%) =  
0
V
VIN (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VIN (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
8
V
600  
8
V
A
A
tdoff  
tEoff  
=
=
1,916  
2,308  
μs  
μs  
tdon  
tEon  
=
=
1,909  
2,116  
μs  
μs  
Figure 3.  
IGBT  
Figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
VCE  
tr  
VCE  
IC  
tf  
600  
VC (100%) =  
I C (100%) =  
tf =  
600  
8
V
VC (100%) =  
I C (100%) =  
V
A
8
A
0,136  
μs  
tr  
=
0,016  
μs  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Switching Characteristics  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Inverter Switching Characteristics  
Figure 8.  
FWD  
Figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr  
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Id  
Qrr  
Erec  
tErec  
Prec  
I d (100%) =  
8
A
P rec (100%) =  
Erec (100%) =  
4,85  
0,79  
1,13  
kW  
mJ  
μs  
Q rr (100%) =  
1,75  
1,13  
μC  
μs  
tQrr  
=
tErec =  
Copyright Vincotech  
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26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 17 mm housing with solder pins  
without thermal paste 12 mm housing with press-fit pins  
with thermal paste 17 mm housing with solder pins  
with thermal paste 12 mm housing with press-fit pins  
Ordering Code  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
20-1B12IPA008SC-L239C09-/3/  
20-FB12IPA008SC-L239C08Y-/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
Function  
WH  
WL  
45,1  
42,4  
39,7  
37  
2
0
3
0
RW+  
RW-  
GND  
VCC  
VH  
4
0
17 mm Solder pin  
5
34,3  
31,6  
28,9  
26,2  
23,5  
20,8  
18,1  
15,4  
12,7  
10  
0
6
0
7
0
8
0
VL  
9
0
RV+  
RV-  
UH  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
0
0
0
12 mm Press-fit  
UL  
0
RU+  
RU-  
RST  
FO  
0
7,3  
0
4,6  
0
1,9  
0
NTC  
L3  
0
8,8  
17,8  
26,1  
13,3  
18,7  
26,1  
17,8  
26,1  
21,6  
16,7  
26,1  
21,9  
0
L2  
3,8  
L1  
7,8  
EU  
9
DC1-  
DC1+  
EV  
14,2  
20,6  
24,7  
28,7  
36,2  
37,5  
45,1  
U
DC2+  
EW  
V
W
Pin Descriptions  
Pin  
1
Function  
W-HIN  
W-LIN  
RW+  
RW-  
Description  
Power pin descriptions  
Function Description  
Signal input for high-side W phase  
Signal input for low-side W phase  
W phase shunt +  
Pin  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
2
L3  
L2  
Rectifier input L3  
Rectifier input L2  
Rectifier input L1  
Open emitter U phase  
Rectifier output DC-  
Rectifier output DC+  
Open emitter V phase  
Output U phase  
3
4
W phase shunt -  
L1  
5
GND  
Signal ground  
EU  
6
VCC  
Driver circuit supply voltage  
Signal input for high-side V phase  
Signal input for low-side V phase  
V phase shunt +  
DC1-  
DC1+  
EV  
7
V-HIN  
V-LIN  
RV+  
8
9
U
10  
11  
12  
13  
14  
15  
16  
17  
RV-  
V phase shunt -  
DC2+  
EW  
V
Inverter input DC+  
Open emitter W phase  
Output V phase  
U-HIN  
U-LIN  
RU+  
Signal input for high-side U phase  
Signal input for low-side U phase  
U phase shunt +  
W
Output W phase  
RU-  
U phase shunt -  
RESET  
¬FAULT  
NTC  
Fault latch reset (min. 500ns pulse)  
Fault latch input/output (negative logic, open drain)  
Temperature sensor connector  
Copyright Vincotech  
16  
26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Pinout  
Identification  
ID  
Component  
FWD  
Voltage  
1600 V  
1200 V  
1200 V  
Current  
Function  
Comment  
D7-D12  
T1-T6  
D1-D6  
R1-R3  
NTC  
12 A  
8 A  
Rectifier Diode  
Inverter Switch  
Inverter Diode  
Inverter Shunt  
Thermistor  
IGBT  
FWD  
7,5 A  
Resistor  
Thermistor  
Copyright Vincotech  
17  
26 July. 2019 / Revision 2  
20-1B12IPA008SC-L239C09  
20-FB12IPA008SC-L239C08Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1B packages see vincotech.com website.  
Package data  
Package data for flow 1B packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
20-xB12IPA008SC-L239C0xx-D2-14  
26 July. 2019  
Modified remark on Gate Driver, VoutFAULTH condition  
6
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
18  
26 July. 2019 / Revision 2  

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