30-F206NBA200SG-M235L25 [VINCOTECH]
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage;
| 型号： | 30-F206NBA200SG-M235L25 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage |
| 文件： | 总19页 (文件大小：1651K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-F206NBA200SG-M235L25
datasheet
flow BOOST 2
600 V / 200 A
Features
flow 2 17mm housing
● High efficiency symmetric boost
● Ultra fast switching frequency
● Low Inductance Layout
Target Applications
Schematic
● Solar inverter
Types
● 30-F206NBA200SG-M235L25
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Bypass Diode
Repetitive peak reverse voltage
Forward current
V RRM
I FAV
I FSM
1600
130
V
A
T s = 80 °C
DC current
t p = 10 ms
T j = T jmax
Surge (non-repetitive) forward current
I2t-value
2000
13600
209
A
I 2
t
A2s
W
°C
P tot
T s = 80 °C
Power dissipation
T jmax
Maximum Junction Temperature
150
Input Boost IGBT
Collector-emitter breakdown voltage
DC collector current
V CE
I C
600
140
800
297
±20
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Repetitive peak collector current
Power dissipation
A
W
V
Gate-emitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
5
µs
V
400
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Boost Inverse Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
70
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
200
154
175
A
W
°C
T jmax
Maximum Junction Temperature
Input Boost Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
166
240
226
150
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
A
W
°C
T jmax
Maximum Junction Temperature
Thermal Properties
Storage temperature
T stg
T op
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Isolation Properties
t
t
= 2 s
DC Test Voltage *
AC Voltage
6000
2500
V
V is
Isolation voltage
= 1 min
V
Creepage distance
Clearance
min 12,7
min 12,7
mm
mm
* 100% tested in production
copyright Vincotech
2
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V GS [V]
V CE [V] I F [A]
V DS [V] I D [A]
T j [°C]
Min
Max
Bypass Diode
25
125
25
125
25
125
1,17
1,11
0,95
0,75
0,002
0,003
1,21
V F
V to
r t
Forward voltage
200
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
200
200
Ω
I r
1600
25
0,1
mA
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
0,33
K/W
Input Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
0,0032
25
4,2
5,1
5,6
V
V
25
150
1,38
2,10
2,41
2,22
±15
0
200
600
0
25
25
0,011
600
mA
nA
Ω
20
none
25
150
25
150
25
150
25
150
25
150
25
53
50
46
Rise time
47
ns
616
666
33
t d(off)
t f
Turn-off delay time
R goff = 4 Ω
R gon = 4 Ω
±15
350
200
Fall time
26
5,38
7,28
4,56
5,16
E on
Turn-on energy loss
Turn-off energy loss
Input capacitance
mWs
pF
E off
C ies
C oes
C res
Q G
150
12400
464
Output capacitance
f
= 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
360
±15
480
200
1260
nC
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
0,32
K/W
Input Boost Inverse Diode
25
125
1,2
1,90
1,84
1,9
V F
Diode forward voltage
200
V
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
0,62
K/W
Input Boost Diode
Forward voltage
25
125
2,27
1,96
2,8
80
V F
I rm
240
200
V
µA
Reverse leakage current
Peak recovery current
±15
±15
350
350
25
25
125
25
125
25
125
25
125
25
125
79
144
34
122
2,03
8,32
0,22
1,25
5246
3886
I RRM
A
t rr
Reverse recovery time
ns
Q rr
R gon = 4 Ω
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
200
µC
E rec
mWs
A/µs
( di rf/dt )max
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
0,42
K/W
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
100
25
25
25
25
22000
Ω
%
R 100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B (25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
3
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Input BOOST Inverse Diode
figure 25.
Boost Inverse Diode
figure 26.
Boost Inverse Diode
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
350
300
250
200
150
100
10-1
D = 0,5
0,2
100
0,1
Tj = Tjmax-25°C
0,05
0,02
0,01
0,005
0,000
t p (s)
50
Tj = 25°C
0
10-2
10-5
0
0,5
1
1,5
2
2,5
3
3,5
10-4
10-3
10-2
10-1
100
101 10
VF (V)
At
At
t p / T
t p
=
250
μs
D =
R th(j-s)
=
0,62
K/W
figure 27.
Power dissipation as a
Boost Inverse Diode
figure 28.
Forward current as a
Boost Inverse Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T j)
I F = f(T j)
300
250
200
150
100
50
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T j
(
o C)
T j (
o C)
At
T j =
At
T j =
175
ºC
175
ºC
copyright Vincotech
4
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I D = f(V DS
)
I D = f(V DS)
600
600
500
400
300
200
100
500
400
300
200
100
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
250
25
μs
°C
250
125
μs
°C
T j =
T j =
V GS from
V GS from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I D = f(V GS
)
250
600
500
400
300
200
200
150
100
50
Tj = Tjmax-25°C
100
Tj = Tjmax-25°C
Tj = 25°C
Tj = 25°C
0
0
0
0
0,5
1
1,5
2
2,5
3
3,5
2
4
6
8
10
VGS (V)
VF (V)
At
At
t p
=
t p
=
250
10
μs
V
250
μs
V DS
=
copyright Vincotech
5
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I D)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
15
12
9
15
12
9
Eon High T
Eon Low T
Eon High T
Eoff High T
Eon Low T
Eoff Low T
Eoff High T
Eoff Low T
6
6
3
3
0
0
0
2
4
6
8
10
0
100
200
300
I
C (A)
400
R G
(
Ω
)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
°C
V
25/125
350
°C
V
V DS
V GS
=
V DS
V GS
=
350
15
4
=
=
V
15
V
R gon
R goff
=
I D =
Ω
Ω
200
A
=
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector (drain) current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
2
1,6
1,2
0,8
0,4
0
2
1,6
1,2
0,8
0,4
0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
2
4
6
8
10
0
100
200
300
400
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
°C
V
25/125
350
°C
V
V DS
V GS
=
V DS
V GS
=
350
15
4
=
=
V
15
V
R gon
R goff
=
I D =
Ω
Ω
200
A
=
4
copyright Vincotech
6
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I D)
Typical switching times as a
function of gate resistor
t = f(R G)
10
10
tdoff
1
1
tdoff
tr
0,1
0,1
tdon
tdon
tf
tf
tr
0,01
0,01
0,001
0,001
I D (A)
R G ( Ω )
0
2
4
6
8
10
0
100
200
300
400
With an inductive load at
With an inductive load at
T j =
T j =
125
350
15
4
°C
V
125
350
15
°C
V
V DS
V GS
=
V DS
V GS
=
=
=
V
V
R gon
R goff
=
I C =
Ω
Ω
200
A
=
4
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,15
0,12
0,09
0,06
0,03
0
0,25
trr High T
trr High T
0,2
0,15
0,1
trr Low T
0,05
trr Low T
0
0
100
200
300
400
0
2
4
6
8
10
I C (A)
R Gon ( Ω )
At
At
T j =
T j =
V R =
I F =
25/125
350
15
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V
200
A
R gon
=
V GS =
4
Ω
15
V
copyright Vincotech
7
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
12
10
8
10
Qrr High T
Qrr High T
8
6
4
2
6
4
Qrr Low T
2
Qrr Low T
0
0
0
I C (A)
2
4
6
8
R
Gon ( Ω) 10
0
100
200
300
400
At
At
T j =
T j =
V R =
I F =
25/125
350
15
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
=
V
200
A
=
4
Ω
V GS
=
15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
200
160
120
80
300
IRRM High T
250
200
150
100
50
IRRM Low T
IRRM High T
IRRM Low T
40
0
0
0
0
100
200
300
I C (A)
400
2
4
6
8
R Gon ( Ω )
10
At
At
T j =
T j =
V R =
I F =
25/125
350
15
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
=
V
200
A
=
V GS =
4
Ω
15
V
copyright Vincotech
8
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
8000
12000
dI0/dt
dI0/dt
dIrec/dt
7000
dIrec/dt
10000
8000
6000
4000
2000
0
6000
5000
4000
3000
2000
1000
0
0
100
200
300
400
I
C (A)
0
2
4
6
8
R Gon ( Ω)
10
At
At
T j =
T j =
V R =
I F =
25/125
350
15
°C
V
25/125
°C
V
V CE
V GE
R gon
=
350
200
15
=
V
A
=
4
Ω
V GS
=
V
figure 19.
IGBT
figure 20.
FWD
IGBT/MOSFET transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,1
0,05
0,02
0,01
0,005
0,000
0,005
0,000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101 10
10-5
10-4
10-3
10-2
10-1
100
101 10
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,32
K/W
0,42
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
3,80E-02
7,45E-02
5,88E-02
6,30E-02
7,23E-02
1,31E-02
Tau (s)
6,34E+00
R (K/W)
2,51E-02
8,11E-02
7,23E-02
8,79E-02
1,05E-01
2,58E-02
Tau (s)
9,71E+00
1,65E+00
3,72E-01
8,42E-02
2,60E-02
3,72E-03
2,16E+00
5,30E-01
1,27E-01
3,93E-02
5,33E-03
copyright Vincotech
9
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T j)
Collector/Drain current as a
function of heatsink temperature
I C = f(T j)
600
500
400
300
200
100
0
175
150
125
100
75
50
25
0
0
50
100
150
200
T j
(
o C)
T j (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GS
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T j)
I F = f(T j)
500
400
300
200
100
0
250
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
T j
(
o C)
T j (
o C)
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
10
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
INPUT BOOST
figure 25.
IGBT
figure 26.
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of drain-source voltage
I D = f(V DS
)
V GS = f(Q g)
16
103
14
12
10
8
1mS
10uS
120 V
100uS
102
480 V
10mS
100mS
101
6
DC
4
100
2
0
10-1
100
0
200
400
600
800
1000
1200
1400
103
101
102
VDS (V)
Qg (nC)
At
At
D =
single pulse
I D
=
200
A
T s =
80
ºC
V GS
=
15
V
T jmax
T j =
copyright Vincotech
11
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Bypass Diode
figure 1.
Bypass diode
figure 2.
Bypass diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
500
400
300
100
10-1
200
Tj = Tjmax-25°C
D = 0,5
0,2
Tj = 25°C
0,1
100
0,05
0,02
0,01
0,005
0
0,000
10-2
10-5
0
0,4
0,8
1,2
1,6
2
t p (s)
VF (V)
10-4
10-3
10-2
10-1
100
101
At
At
t p / T
t p
=
250
μs
D =
R th(j-s)
=
0,33
K/W
figure 3.
Power dissipation as a
Bypass diode
figure 4.
Forward current as a
Bypass diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T j)
I F = f(T j)
500
400
300
200
100
0
140
120
100
80
60
40
20
0
0
50
100
150
200
o C)
T j (
o C)
0
50
100
150
200
T j
(
At
At
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
12
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
copyright Vincotech
13
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Switching Definitions BOOST IGBT
General conditions
T j
=
=
=
125 °C
4 Ω
4 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
150
%
200
%
IC
125
tdoff
150
100
VGE 90%
VCE 90%
VCE
100
75
IC
VGE
VGE
tdon
50
IC 1%
50
tEoff
25
V CE3%
VGE 10%
IC 10%
VCE
0
tEon
0
-25
-50
-0,3
-0,1
0,1
0,3
0,5
0,7
time (us)
0,9
3,9
4
4,1
4,2
4,3
4,4
time(us)
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
350
199
0,67
0,74
V
350
199
0,05
0,30
V
A
A
t doff
=
=
μs
μs
t don
=
=
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
150
200
%
%
VCE
IC
125
150
fitted
IC
100
VCE
IC 90%
100
75
IC 90%
IC 60%
tr
50
50
IC 40%
25
IC 10%
IC10%
0
0
tf
-25
-50
0,45
0,5
0,55
0,6
0,65
0,7
0,75
3,9
4
4,1
4,2
4,3
time(us)
time (us)
V C (100%) =
I C (100%) =
t f =
350
199
0,03
V
V C (100%) =
I C (100%) =
t r =
350
199
0,05
V
A
A
μs
μs
copyright Vincotech
14
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Switching Definitions BOOST IGBT
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
%
125
Pon
%
IC 1%
Eoff
Eon
100
75
50
25
0
100
75
50
25
VGE 90%
VCE 3%
VGE 10%
Poff
0
tEoff
tEon
-25
-25
-0,2
0
0,2
0,4
0,6
0,8
3,9
4
4,1
4,2
4,3
4,4
4,5
time (us)
time(us)
P off (100%) =
E off (100%) =
69,74
kW
P on (100%) =
E on (100%) =
69,74
7,28
0,30
kW
mJ
μs
5,16
0,74
mJ
μs
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
Vd
fitted
0
-40
IRRM 10%
IRRM 90%
IRRM 100%
-80
-120
4
4,05
4,1
4,15
4,2
4,25
4,3
time(us)
V d (100%) =
I d (100%) =
350
V
199
A
I RRM (100%) =
t rr
-144
0,12
A
=
μs
copyright Vincotech
15
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Switching Definitions BOOST IGBT
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
%
125
%
Erec
Id
100
100
tErec
75
50
25
0
tQrr
50
Qrr
0
Prec
-50
-100
-25
4
4,1
4,2
4,3
4,4
4
4,1
4,2
4,3
4,4
4,5
time(us)
time(us)
I d (100%) =
Q rr (100%) =
199
A
P rec (100%) =
E rec (100%) =
69,74
kW
mJ
μs
8,32
0,24
μC
μs
1,25
0,24
t Q rr
=
t E rec =
copyright Vincotech
16
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 17 mm housing
30-F206NBA200SG-M235L25
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
1
Function
X
Y
Function
Pin
X
Y
70,8
70,8
68,2
68,2
65,6
65,6
58,6
58,6
21,8
19,2
16,6
14
2,6
0
SOL-
SOL-
SOL-
SOL-
SOL-
SOL-
NTC1
NTC2
DC-
DC-
DC-
DC-
DC-
DC-
DC-
DC-
G6
29
30
0
36,8
36,8
36,8
36,8
36,8
36,8
36,8
36,8
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
2
6,2
3
2,6
0
31
8,8
4
32
11,4
14
5
2,6
0
33
6
34
16,6
19,2
21,8
7
2,9
0
35
8
36
9
0
37, 38
39
Not assembled
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
0
65,6
65,6
68,2
68,2
70,8
70,8
68,2
70,8
68,2
70,8
68,2
70,8
68,2
70,8
68,2
70,8
68,2
70,8
36,8
34,2
36,8
34,2
36,8
34,2
27,2
27,2
24,6
24,6
22
SOL+
0
40
SOL+
SOL+
0
41
11,4
8,8
6,2
0
0
42
SOL+
0
43
SOL+
0
44
SOL+
0
45
BOOST+
BOOST+
BOOST+
BOOST+
BOOST+
BOOST+
BOOST-
BOOST-
BOOST-
BOOST-
BOOST-
BOOST-
19,6
19,6
19,6
0
13,3
10,4
7,5
7
46
S46
G4
47
48
GND
GND
GND
GND
GND
GND
G5
49
0
19,4
22
24,6
27,2
29,8
23,5
26,4
29,3
50
22
0
51
14,8
14,8
12,2
12,2
9,6
0
52
0
53
0
54
2,9
2,9
2,9
55
S35
G3
56
9,6
57, 58
Not assembled
copyright Vincotech
17
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
D9 , D10
T1 , T2 , T5 , T6
D11 , D12 , D13 , D14
D1 , D3
FWD
IGBT
1600 V
650 V
600 V
600 V
170 A
100 A
Bypass Diode
Input Boost IGBT
FWD
50 A
Input Boost Inverse Diode
Input Boost Diode
Thermistor
FWD
240 A
NTC
Thermistor
copyright Vincotech
18
15 Feb. 2019 / Revision 5
30-F206NBA200SG-M235L25
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
36
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
1,17
30-F206NBA200SG-M235L25-D5-14
15 Feb. 2019
flow2 frame modification
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
19
15 Feb. 2019 / Revision 5
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