70-W624NIA1K2M702-L400FP7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 70-W624NIA1K2M702-L400FP7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总35页 (文件大小：8489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W624NIA1K2M702-L400FP70
datasheet
1500 V / 1200 A
VINcoNPC X12
Features
VINco X12 housing
● Low inductive package
● Enables four-quadrant operation
● High efficiency
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 70-W624NIA1K2M702-L400FP70
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
1270
2400
2375
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
175
°C
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
826
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
2400
1358
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
1200
104
270
175
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
W
°C
Maximum junction temperature
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
1270
2400
2375
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
175
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
826
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
2400
1358
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw.Inv.Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
826
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
2400
1358
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Total power dissipation
1200
104
270
175
V
A
IF
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Storage temperature
-40…+125
°C
Tjop
Operation temperature under switching condition
Maximum allowed PCB temperature
Isolation Properties
-40…(Tjmax - 25)
°C
°C
TPCB
125
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
08 July 2021 / Revision 3
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70-W624NIA1K2M702-L400FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,12
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
2,05
VCEsat
Collector-emitter saturation voltage
15
1200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1320
6
µA
µA
Ω
20
none
252
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
8,4
nF
Reverse transfer capacitance
Gate charge
3,36
7800
15
600
1200
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,040
K/W
Dynamic
25
166
152
154
42
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
45
47
217
249
257
74
85
101
88
110
117
77
Rgoff = 0,417 Ω
Rgon = 0,417 Ω
ns
td(off)
Turn-off delay time
Fall time
16/-8
600
1190
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 122 μC
= 194 μC
= 207 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
25
125
150
Eoff
108
117
08 July 2021 / Revision 3
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70-W624NIA1K2M702-L400FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1200
1,82
1,96
2,1
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
1200
25
720
µA
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Dynamic
Rth(j-s)
0,07
K/W
25
1081
1228
1262
270
IRRM
125
150
25
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
408
431
122
194
ns
di/dt = 20584 A/μs
di/dt = 24636 A/μs 16/-8
di/dt = 23099 A/μs
600
1190
Recovered charge
μC
207
42,0
73,7
78,2
13899
12695
12576
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Buck Sw. Protection Diode
Static
VF
IR
Forward voltage
Reverse leakage current
Thermal
90
25
2,38
0,35
2,71
V
25
150
0,36
10,8
1200
mA
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
K/W
08 July 2021 / Revision 3
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70-W624NIA1K2M702-L400FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,12
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
2,05
VCEsat
Collector-emitter saturation voltage
15
1200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1320
6
µA
µA
Ω
20
none
252
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
8,4
nF
Reverse transfer capacitance
Gate charge
3,36
7800
15
600
1200
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,040
K/W
Dynamic
25
163
156
157
44
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
42
45
227
250
263
71
95
103
85
98
104
Rgoff = 0,417 Ω
Rgon = 0,417 Ω
ns
td(off)
Turn-off delay time
Fall time
16/-8
600
1179
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 119 μC
= 192 μC
= 216 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
25
125
150
76
107
114
Eoff
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1200
1,82
1,96
2,1
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
1200
25
720
µA
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
0,07
K/W
Dynamic
25
951
1173
1199
286
413
452
119
192
216
41
IRRM
125
150
25
125
150
25
125
150
25
Peak recovery current
A
trr
Qr
Reverse recovery time
ns
di/dt = 21875 A/μs
di/dt = 26999 A/μs 16/-8
di/dt = 25438 A/μs
600
1179
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
125
150
72
82
7710
8389
8083
mWs
A/µs
(dirf/dt)max
Boost Sw.Inv.Diode
Static
25
125
1,82
1,96
2,1
VF
IR
Forward voltage
Reverse leakage current
Thermal
1200
V
1200
25
720
µA
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
0,07
K/W
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Sw. Protection Diode
Static
VF
IR
Forward voltage
Reverse leakage current
Thermal
90
25
2,38
2,71
V
25
150
0,36
10,8
1200
mA
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
0,35
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
I
I
I
I
Z
Z
Z
Z
10-2
10-3
10-4
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,040
K/W
IGBT thermal model values
R (K/W)
τ
(s)
4,77E-03
7,48E-03
7,36E-03
1,45E-02
3,81E-03
8,43E-04
1,21E-03
9,47E-01
2,04E-01
3,92E-02
8,36E-03
2,61E-03
3,68E-04
8,72E-05
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
10-1
Z
Z
Z
Z
10-2
10-3
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,07
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,91E-03
1,02E-02
1,57E-02
2,42E-02
8,72E-03
2,15E-03
4,02E-03
1,04E+00
2,14E-01
4,54E-02
7,86E-03
2,17E-03
3,47E-04
7,64E-05
08 July 2021 / Revision 3
Copyright Vincotech
11
70-W624NIA1K2M702-L400FP70
datasheet
Buck Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
0,35
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,68E-02
3,42E-02
1,32E-01
9,39E-02
3,70E-02
3,86E-02
5,53E-01
7,61E-02
1,28E-02
3,66E-03
9,02E-04
2,43E-04
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
I
I
I
I
Z
Z
Z
Z
10-2
10-3
10-4
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,040
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,77E-03
7,48E-03
7,36E-03
1,45E-02
3,81E-03
8,43E-04
1,21E-03
9,47E-01
2,04E-01
3,92E-02
8,36E-03
2,61E-03
3,68E-04
8,72E-05
08 July 2021 / Revision 3
Copyright Vincotech
13
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
10-1
Z
Z
Z
Z
10-2
10-3
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,07
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,91E-03
1,02E-02
1,57E-02
2,42E-02
8,72E-03
2,15E-03
4,02E-03
1,04E+00
2,14E-01
4,54E-02
7,86E-03
2,17E-03
3,47E-04
7,64E-05
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Boost Sw.Inv.Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
10-1
Z
Z
Z
Z
10-2
10-3
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,07
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,91E-03
1,02E-02
1,57E-02
2,42E-02
8,72E-03
2,15E-03
4,02E-03
1,04E+00
2,14E-01
4,54E-02
7,86E-03
2,17E-03
3,47E-04
7,64E-05
08 July 2021 / Revision 3
Copyright Vincotech
16
70-W624NIA1K2M702-L400FP70
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
0,35
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,68E-02
3,42E-02
1,32E-01
9,39E-02
3,70E-02
3,86E-02
5,53E-01
7,61E-02
1,28E-02
3,66E-03
9,02E-04
2,43E-04
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Characteristics
figure 1.
IGBT
Typical switching energy losses as a function of collector current
E = f(I C
)
E
E
E
E
25 °C
With an inductive load at
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
:
Tj
125 °C
150 °C
16/-8
0,417
0,417
R gon
R goff
figure 2.
FWD
Typical reverse recovered energy loss as a function of collector current
Erec = f(I c)
E
E
E
E
25 °C
125 °C
150 °C
With an inductive load at
VCE
VGE
=
=
=
600
V
V
Ω
Tj:
16/-8
0,417
R gon
08 July 2021 / Revision 3
Copyright Vincotech
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70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Characteristics
figure 3.
IGBT
Typical switching times as a function of collector current
t = f(I C)
t
t
t
t
With an inductive load at
Tj =
150
600
°C
V
VCE
=
=
=
=
16/-8
0,417
0,417
V
VGE
R gon
R goff
Ω
Ω
figure 4.
FWD
Typical reverse recovery time as a function of collector current
t rr = f(I C
)
t
t
t
t
At
VCE
=
600
V
V
Ω
25 °C
125 °C
150 °C
16/-8
0,417
:
Tj
VGE
R gon
=
=
08 July 2021 / Revision 3
Copyright Vincotech
20
70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Characteristics
figure 5.
FWD
Typical recovered charge as a function of collector current
Q r = f(I C
)
Q
Q
Q
Q
25 °C
600
V
V
Ω
At
VCE
VGE
R gon
=
16/-8
0,417
:
Tj
125 °C
150 °C
=
=
figure 6.
FWD
Typical peak reverse recovery current current as a function of collector current
I RM = f(I C
)
I
I
I
I
600
V
V
Ω
25 °C
125 °C
150 °C
At
VCE =
16/-8
0,417
:
Tj
VGE
=
=
R gon
08 July 2021 / Revision 3
Copyright Vincotech
21
70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Characteristics
figure 7.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
di F/dt, di rr/dt = f(I C
)
diF
/
dt
t
t
t
t
i
i
i
i
dir r
/dt
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
16/-8
0,417
:
Tj
VGE
R gon
=
=
figure 8.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
0,417
0,417
R gon
R goff
Ω
08 July 2021 / Revision 3
Copyright Vincotech
22
70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
T j
Rgon
R goff
0,417 Ω
0,417 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-8
V
VGE (0%) =
-8
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
V
600
V
1209
0,249
0,754
A
1209
0,152
0,604
A
μs
μs
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
tr
VCE
IC
tf
600
V
600
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
1209
A
1209
A
0,085
μs
tr
=
0,045
μs
08 July 2021 / Revision 3
Copyright Vincotech
23
70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eon
Eoff
Pon
Poff
tEon
tEoff
P off (100%) =
Eoff (100%) =
725,65
kW
mJ
μs
P on (100%) =
Eon (100%) =
725,65
109,70
0,60
kW
mJ
μs
108,21
0,75
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
V
1209
A
-1228
0,408
A
μs
t rr
=
08 July 2021 / Revision 3
Copyright Vincotech
24
70-W624NIA1K2M702-L400FP70
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qr
Erec
tErec
IF
Prec
1209
A
725,65
73,73
0,83
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
194,17
0,83
μC
μs
mJ
μs
t Qr
=
tErec =
Gate Driver at measurement
For more information see L40x gate driver application note
GD-L400FP70 in SLAVE-MASTER-SLAVE configuration
08 July 2021 / Revision 3
Copyright Vincotech
25
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Characteristics
figure 1.
IGBT
Typical switching energy losses as a function of collector current
E = f(I C
)
E
E
E
E
25 °C
With an inductive load at
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
:
Tj
125 °C
150 °C
16/-8
0,417
0,417
R gon
R goff
figure 2.
FWD
Typical reverse recovered energy loss as a function of collector current
Erec = f(I c)
E
E
E
E
25 °C
125 °C
150 °C
With an inductive load at
VCE
VGE
=
=
=
600
V
V
Ω
Tj:
16/-8
0,417
R gon
08 July 2021 / Revision 3
Copyright Vincotech
26
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Characteristics
figure 3.
IGBT
Typical switching times as a function of collector current
t = f(I C
)
t
t
t
t
With an inductive load at
Tj =
150
°C
V
VCE
=
=
=
=
600
16/-8
0,417
0,417
V
VGE
R gon
R goff
Ω
Ω
figure 4.
FWD
Typical reverse recovery time as a function of collector current
t rr = f(I C
)
t
t
t
t
At
VCE
=
600
V
V
Ω
25 °C
125 °C
150 °C
16/-8
0,417
:
Tj
VGE
R gon
=
=
08 July 2021 / Revision 3
Copyright Vincotech
27
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Characteristics
figure 5.
FWD
Typical recovered charge as a function of collector current
Q r = f(I C
)
Q
Q
Q
Q
25 °C
600
V
V
Ω
At
VCE
VGE
R gon
=
16/-8
0,417
:
Tj
125 °C
150 °C
=
=
figure 6.
FWD
Typical peak reverse recovery current current as a function of collector current
I RM = f(I C
)
I
I
I
I
600
V
V
Ω
25 °C
125 °C
150 °C
At
VCE =
16/-8
0,417
:
Tj
VGE
=
=
R gon
08 July 2021 / Revision 3
Copyright Vincotech
28
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Characteristics
figure 7.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
di F/dt, di rr/dt = f(I C
)
diF/d
t
t
t
t
t
i
i
i
i
d
ir r/d
t
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
16/-8
0,417
:
Tj
VGE
R gon
=
=
figure 8.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
0,417
0,417
R gon
R goff
Ω
08 July 2021 / Revision 3
Copyright Vincotech
29
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
T j
Rgon
R goff
0,417 Ω
0,417 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VGE
IC
VCE
tEoff
VCE
tEon
VGE (0%) =
-8
V
V
GE (0%) =
-8
V
VGE (100%) =
VC (100%) =
I C (100%) =
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
16
V
600
V
600
V
1180
0,250
0,772
A
1180
0,156
0,582
A
μs
μs
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
tr
IC
VCE
tf
600
V
A
600
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
1180
1180
0,042
A
0,095
μs
tr
=
μs
08 July 2021 / Revision 3
Copyright Vincotech
30
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eon
Eoff
Pon
Poff
tEon
tEoff
P off (100%) =
Eoff (100%) =
707,96
kW
mJ
μs
P on (100%) =
Eon (100%) =
707,96
kW
107,48
0,77
97,83
0,58
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
600
V
1180
-1173
0,413
A
A
μs
t rr
=
08 July 2021 / Revision 3
Copyright Vincotech
31
70-W624NIA1K2M702-L400FP70
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
IF
Qr
tErec
Prec
1180
A
707,96
72,46
0,83
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
192,45
0,83
μC
μs
mJ
μs
t Qr
=
tErec =
Gate Driver at measurement
For more information see L40x gate driver application note
GD-L400FP70 in SLAVE-MASTER-SLAVE configuration
08 July 2021 / Revision 3
Copyright Vincotech
32
70-W624NIA1K2M702-L400FP70
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
70-W624NIA1K2M702-L400FP70
Name
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
YK/Date code
Lot
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Serial
Vincotech
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
UL
TTTTTTTVV
LLLLL
SSSS
Outline
08 July 2021 / Revision 3
Copyright Vincotech
33
70-W624NIA1K2M702-L400FP70
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
1200 A
Buck Switch
D11, D12
D41, D42
T13, T14
D13, D14
D16, D15
D43, D44
Rt
FWD
FWD
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 A
90 A
Buck Diode
Buck Sw. Protection Diode
Boost Switch
IGBT
1200 A
1200 A
1200 A
90 A
FWD
Boost Diode
FWD
Boost Sw.Inv.Diode
Boost Sw. Protection Diode
Thermistor
FWD
Thermistor
08 July 2021 / Revision 3
Copyright Vincotech
34
70-W624NIA1K2M702-L400FP70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 4
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco X12 packages see vincotech.com website.
Package data
Package data for VINco X12 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Pin coordinates corrected
70-W624NIA1K2M702-L400FP70-D3-14
08 July 2021
33
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
08 July 2021 / Revision 3
Copyright Vincotech
35
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