80-M006PNB006SA01-K614D [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 80-M006PNB006SA01-K614D |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总17页 (文件大小：940K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80ꢀM006PNB006SA*ꢀK614*
datasheet
MiniSKiiP® PIM 0
Features
600 V / 6 A
MiniSKiiP®0 housing
● Solderless interconnection
● Trench Fieldstop IGBT's for low saturation losses
● Optional 2ꢀ and 3ꢀleg rectifier
Target Applications
Schematic
● Industrial Drives
● Embedded Drives
Types
80ꢀM006PNB006SA01ꢀK614D, 2ꢀleg rectifier
80ꢀM006PNB006SAꢀK614C, 3ꢀleg rectifier
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
V
A
T s = 80 °C
T c = 80 °C
25
25
T j = T jmax
t p = 10 ms
T j = T jmax
I FSM
Surge (nonꢀrepetitive) forward current
I2tꢀvalue
220
240
A
T j = 25 °C
I 2
t
A2s
T s = 80 °C
T c = 80 °C
46
70
P tot
Power dissipation
W
T jmax
Maximum Junction Temperature
150
°C
Inverter Switch
V CE
I C
Collectorꢀemitter break down voltage
600
V
A
T s = 80 °C
T c = 80 °C
10
10
T j = T jmax
DC collector current
I CRM
t p limited by T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
18
18
A
V CE ≤ 1200V, T j ≤ T op max
T j = T jmax
A
T s = 80 °C
T c = 80 °C
40
60
P tot
V GE
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
V
A
T s = 80 °C
T c = 80 °C
10
10
T j = T jmax
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
22
A
T s = 80 °C
T c = 80 °C
31
47
W
°C
T jmax
Maximum Junction Temperature
175
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
ꢀ40…+(T jmax ꢀ 25)
Operation temperature under switching condition
Isolation Properties
Insulation voltage
V is
t p=2s
DC Voltage
4000
min 12,7
min 12,7
<200
V
Creepage distance
Clearance
mm
mm
Comparative Tracking Index
CTI
copyright Vincotech
2
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
I C [A]
or
V GE [V]
or
or
V CE [V] I F [A]
T j [°C]
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Rectifier Diode
25
125
25
125
25
125
25
1,43
1,44
0,92
0,79
20,29
26,11
1,64
0,05
V F
V to
r t
Forward voltage
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
25
25
mꢁ
mA
I r
1500
125
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
1,5
K/W
Inverter Switch
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
25
150
25
150
25
150
25
5
5,8
6,5
2,04
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,00009
V
V
1,24
1,59
1,84
15
0
6
0,0004
300
600
0
mA
nA
ꢁ
20
150
none
25
150
25
150
25
150
25
150
25
150
25
105
102,4
21,8
Rise time
27,8
ns
142,2
163,6
102,7
132,4
0,15
0,22
0,15
0,19
t d(off)
t f
Turnꢀoff delay time
R goff = 64 ꢁ
R gon = 64 ꢁ
±15
300
6
Fall time
E on
Turnꢀon energy loss
mWs
pF
E off
C ies
C oss
C rss
Q G
Turnꢀoff energy loss
150
Input capacitance
368
28
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
11
15
480
6
62
42
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
2,4
K/W
Inverter Diode
25
150
25
150
25
150
25
150
25
150
25
1,42
1,36
3,92
5,82
182,7
288,1
0,32
0,77
45
V F
I RRM
Diode forward voltage
6
6
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
Q rr
R gon = 64 ꢁ
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
300
µC
( di rf/dt )max
E rec
A/µs
mWs
57
0,06
0,16
150
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
3
K/W
Thermistor
Rated resistance
Deviation of R
R100
R
25
1000
ꢁ
%
R 25 = 1000 ꢁ
R 100 = 1670 ꢁ
25
100
ꢀ3
ꢀ2
3
2
Δ R/R
R 100
25
1670
0,76
ꢁ
Temperature coefficient
Aꢀvalue
% /K
1/K
1/K²
7,635*10ꢀ3
1,731*10ꢀ5
B (25/50)
25
25
B (25/100)
Bꢀvalue
Vincotech PTC Reference
E
copyright Vincotech
3
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 1
Typical output characteristics
IGBT
Figure 2
Typical output characteristics
IGBT
I C = f(V CE
)
I C = f(V CE)
20
20
16
12
8
16
12
8
4
4
0
0
0
0
V
CE (V)
V
CE (V)
1
2
3
4
5
1
2
3
4
5
t p
=
t p =
250
25
ꢂs
°C
250
150
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
6
20
16
12
8
Tj = 25°C
5
4
3
2
1
4
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
0,0
0,5
1,0
1,5
2,0
2,5
t p
=
t p =
250
10
ꢂs
V
250
ꢂs
V CE
=
copyright Vincotech
4
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 5
IGBT
Figure 6
Typical switching energy losses
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
as a function of gate resistor
E = f(R G)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff Low T
Eoff High T
Eoff Low T
I C (A)
R G ( Ω )
0
3
6
9
12
0
64
128
192
256
320
inductive load
inductive load
T j =
T j =
25/150
°C
V
25/150
°C
V
300
±15
6
V CE
=
V CE
V GE
=
300
±15
64
V GE
R gon
R goff
=
=
V
V
=
I C =
ꢁ
ꢁ
A
=
64
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,3
0,2
0,2
0,25
Erec
0,20
Tj = Tjmax -25°C
0,15
Tj = Tjmax -25°C
Erec
Erec
0,1
0,10
Tj = 25°C
0,1
0,05
0,00
Erec
Tj = 25°C
0,0
I C (A)
R G ( Ω )
0
3
6
9
12
0
64
128
192
256
320
inductive load
inductive load
T j =
T j =
25/150
300
°C
V
25/150
300
±15
6
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
±15
64
V
V
=
I C =
ꢁ
A
copyright Vincotech
5
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 9
IGBT
Figure 10
Typical switching times as a
IGBT
Typical switching times as a
function of collector current
t = f(I C)
function of gate resistor
t = f(R G)
1,00
1,00
tdoff
tdoff
tf
tf
0,10
0,10
tdon
tr
tr
tdon
0,01
0,01
0,00
0,00
I C (A)
R G ( Ω )
0
3
6
9
12
0
64
128
192
256
320
inductive load
inductive load
T j =
T j =
150
300
±15
64
°C
V
150
300
±15
6
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
ꢁ
ꢁ
A
=
64
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon
)
0,5
0,4
0,3
0,5
trr
0,4
0,3
0,2
trr
Tj = Tjmax -25°C
trr
trr
Tj = Tjmax -25°C
0,2
Tj = 25°C
0,1
0,1
0,0
Tj = 25°C
0,0
I C (A)
R g on ( Ω )
320
0
3
6
9
12
0
64
128
192
256
T j =
T j =
25/150
300
°C
V
25/150
°C
V
V CE
V GE
=
=
V R =
I F =
300
6
±15
64
V
A
R gon
=
V GE =
ꢁ
±15
V
copyright Vincotech
6
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 13
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Q rr = f(R gon
)
1,2
1,0
0,8
1,2
Qrr
1,0
0,8
0,6
Tj = Tjmax -25°C
Qrr
0,6
Tj = Tjmax -25°C
Qrr
Tj = 25°C
0,4
0,4
0,2
0,0
Qrr
Tj = 25°C
0,2
0,0
I C (A)
R g on ( Ω)
320
0
3
6
9
12
0
64
128
192
256
T j =
T j =
V R =
I F =
25/150
300
°C
V
25/150
°C
V
V CE
V GE
R gon
=
300
6
=
±15
64
V
A
=
V GE =
ꢁ
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
8
8
Tj = Tjmax - 25°C
6
6
4
2
0
IRRM
Tj = Tjmax -25°C
IRRM
IRRM
4
Tj = 25°C
Tj = 25°C
IRRM
2
0
I C (A)
R gon ( Ω )
0
3
6
9
12
0
64
128
192
256
320
T j =
T j =
V R =
I F =
25/150
300
°C
V
25/150
300
6
°C
V
V CE
V GE
R gon
=
=
±15
64
V
A
=
V GE =
ꢁ
±15
V
copyright Vincotech
7
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 17
FWD
Figure 18
Typical rate of fall of forward
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
400
900
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
750
320
240
160
80
dIo/dtLow T
600
dIo/dtLow T
450
300
150
di0/dtHigh T
dIrec/dtHigh T
di0/dtHigh T
dIrec/dtLow T
dIrec/dtHigh T
dIrec/dtLow T
0
0
0
64
128
192
256
320
I
C (A)
R gon ( Ω )
0
3
6
9
12
T j =
T j =
V R =
I F =
25/150
300
°C
V
25/150
300
6
°C
V
V CE
V GE
R gon
=
=
±15
64
V
A
=
V GE =
ꢁ
±15
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
t p / T
t p / T
D =
R th(j-s)
D =
R th(j-s)
=
=
2,40
K/W
1,95
3
K/W
2,47
IGBT thermal model values
FWD thermal model values
Thermal grease
Phase change interface
Thermal grease
Phase change interface
R (K/W) τ (s)
R (K/W) Tau (s)
R (K/W) τ (s)
R (K/W) Tau (s)
0,08
0,18
0,82
0,59
0,43
0,30
9,7E+00
0,00
0,00
0,00
0,00
0,00
0,00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,17
0,87
0,95
0,56
0,50
1,2E+00
0,00
0,00
0,00
0,00
0,00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
4,8Eꢀ01
7,5Eꢀ02
1,5Eꢀ02
2,9Eꢀ03
3,0Eꢀ04
1,1Eꢀ01
2,6Eꢀ02
4,6Eꢀ03
8,4Eꢀ04
copyright Vincotech
8
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 21
IGBT
Figure 22
Collector current as a
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
function of heatsink temperature
I C = f(T s)
80
60
40
20
0
12
10
8
6
4
2
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T j =
T j =
V GE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
60
40
20
0
12
10
8
6
4
2
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T j =
T j =
175
°C
175
°C
copyright Vincotech
9
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Inverter
Figure 25
IGBT
Figure 26
Gate voltage vs Gate charge
IGBT
Safe operating area as a function
of collectorꢀemitter voltage
I C = f(V CE
)
V GE = f(Q G)
102
18
16
14
12
10
8
10mS
1mS
10uS
100uS
100mS
DC
120V
101
100
10-1
480V
6
4
2
0
0
11
22
33
44
55
100
VCE (V)
103
101
102
Q G (nC)
D =
single pulse
I C
=
6
A
T s =
80
ºC
V GE
=
±15
T jmax
V
T j =
ºC
Figure 27
IGBT
Figure 28
IGBT
Short circuit withstand time as a function of
gateꢀemitter voltage
Typical short circuit collector current as a function of
gateꢀemitter voltage
t sc = f(V GE
)
I sc = f(V GE)
17,5
1000
15
800
12,5
600
10
7,5
400
5
200
2,5
0
0
12
12,6
13,2
13,8
14,4
15
VGE (V)
12
14
16
18
20
VGE (V)
V CE
=
300
175
V
V CE
≤
300
175
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
10
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Rectifier Diode
Figure 1
Rectifier Diode
Figure 2
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
100
10-1
10-2
75
60
45
30
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
15
Tj = Tjmax-25°C
Tj = 25°C
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10-5
10-4
10-3
10-2
10-1
100
1011
VF (V)
t p (s)
t p / T
t p
=
250
ꢂs
D =
R th(j-s)
=
1,5
K/W
Figure 3
Power dissipation as a
Rectifier Diode
Figure 4
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
120
90
60
30
0
30
25
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
11
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Thermistor
Figure 1
Thermistor
Thermistor
Typical PTC characteristic
as a function of temperature
R T = f(T )
Equation of PTC resistance temperature dependency
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
R (T ) = 1000 Ω[1+ A *(T ꢀ25°C) +B *(T ꢀ25°C) 2]
[Ω]
25
45
65
85
105
125
T (°C)
copyright Vincotech
12
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Switching Definitions Inverter
General conditions
T j
=
=
=
150 °C
64 ꢁ
64 ꢁ
R gon
R goff
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
250
%
140
%
120
tdoff
200
IC
VCE
100
VGE 90%
VCE 90%
150
80
60
40
20
0
VCE
IC
100
tdon
tEoff
VGE
50
IC10%
VCE 3%
VGE10%
IC 1%
VGE
0
tEon
-50
-20
2,8
2,9
3
3,1
3,2
3,3
3,4
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (µs)
time(µs)
V GE (0%) =
ꢀ15
V
V GE (0%) =
ꢀ15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
300
6
V
300
6
V
A
A
t doff
=
=
0,16
0,52
ꢂs
ꢂs
t don
=
=
0,10
0,27
ꢂs
ꢂs
t E off
t E on
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
140
250
%
%
120
fitted
IC
Ic
200
VCE
100
IC 90%
80
150
VCE
100
IC
60%
60
IC90%
tr
40
20
0
IC 40%
50
IC10%
IC10%
0
tf
-20
-50
-0,05
0
0,05
0,1
0,15
0,2
0,25
0,3
time (µs)
3
3,05
3,1
3,15
3,2
3,25
time(µs)
V C (100%) =
I C (100%) =
t f =
300
V
V C (100%) =
I C (100%) =
t r =
300
6
V
6
A
A
0,13
ꢂs
0,03
ꢂs
copyright Vincotech
13
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
120
180
Pon
%
%
Eoff
100
150
120
Poff
80
60
40
20
Eon
90
60
30
0
VGE 90%
IC
VCE
1%
VGE 10%
3%
0
tEon
tEoff
-20
-30
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
time (µs)
2,9
3
3,1
3,2
3,3
3,4
time(µs)
P off (100%) =
E off (100%) =
1,80
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
1,80
0,23
0,27
kW
mJ
ꢂs
0,19
0,52
t E off
=
t E on =
Figure 7
Output inverter FWD
Turnꢀoff Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
Vd
fitted
IRRM10%
0
-40
-80
IRRM90%
IRRM100%
-120
2,95
3,1
3,25
3,4
3,55
3,7
time(µs)
V d (100%) =
I d (100%) =
300
6
V
A
A
I RRM (100%) =
ꢀ6
t rr
=
0,29
ꢂs
copyright Vincotech
14
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
120
%
Erec
%
Qrr
Id
100
100
tQrr
80
tErec
50
60
40
20
0
0
-50
Prec
-100
-150
-20
3
3,2
3,4
3,6
3,8
4
4,2
time(µs)
2,9
3,1
3,3
3,5
3,7
3,9
4,1
4,3
time(µs)
I d (100%) =
Q rr (100%) =
6
A
P rec (100%) =
E rec (100%) =
1,80
kW
mJ
ꢂs
0,78
1,00
ꢂC
ꢂs
0,16
1,00
t Q rr
=
t E rec =
copyright Vincotech
15
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout ꢀ Identification
Ordering Code & Marking
Version
Ordering Code
with 2ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM)
with 2ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM) and P12
with 2ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM)
with 2ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM) and P12
with 3ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM)
with 3ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM) and P12
with 3ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM)
with 3ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM) and P12
80ꢀM006PNB006SA01ꢀK614Dꢀ/0A/
80ꢀM006PNB006SA01ꢀK614Dꢀ/1A/
80ꢀM006PNB006SA01ꢀK614Dꢀ/0B/
80ꢀM006PNB006SA01ꢀK614Dꢀ/1B/
80ꢀM006PNB006SAꢀK614Cꢀ/0A/
80ꢀM006PNB006SAꢀK614Cꢀ/1A/
80ꢀM006PNB006SAꢀK614Cꢀ/0B/
80ꢀM006PNB006SAꢀK614Cꢀ/1B/
Name
Type&Ver
Date code
Vinco&Lot Serial&UL
Text
NNꢀNNNNNNNNNNNNNN
TTTTTTTVV
WWYY
Vinco LLLLL
SSSS UL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1ꢀT6
D1ꢀD6
D7ꢀD12
PTC
IGBT
FWD
600 V
600 V
1600 V
ꢀ
6 A
6 A
25 A
ꢀ
Inverter Switch
Inverter Diode
Rectifier Diode
Thermistor
Rectifier Diode
PTC
copyright Vincotech
16
13 Jan. 2016 / Revision 3
80ꢀM006PNB006SA*ꢀK614*
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
198
Handling instructions for MiniSkiiP ® 0 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 0 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80ꢀM006PNB010SAxꢀK614xꢀD3ꢀ14
12 Jan. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in la
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
13 Jan. 2016 / Revision 3
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