80-M3166BA140SC03-K489G42 [VINCOTECH]
High inrush current capability;
| 型号： | 80-M3166BA140SC03-K489G42 |
| 厂家： | 
VINCOTECH |
| 描述： | High inrush current capability |
| 文件： | 总22页 (文件大小：1765K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M3166BA140SC03-K489G42
datasheet
MiniSKiiP®CON 3
1600 V / 140 A
MiniSkiip®3 housing
Features
● Three-phase input rectifier with Brake
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
● Si3N4 ceramic material
Schematic
Target applications
● Industrial drives
● UPS
Types
● 80-M3166BA140SC03-K489G42
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Brake Switch
VCES
IC
Collector-emitter voltage
1200
190
450
559
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
1
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Brake Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
130
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
900
A
50 Hz Single Half Sine Wave
tp = 10 ms
4050
306
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
151
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
1380
9520
219
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
150
Rectifier Thyristor
VRRM
IFAV
IFSM
I2t
Repetitive peak reverse voltage
1600
163
V
A
sine, d = 0,5
Forward average current
Surge forward current
I2t value
Ts = 80 °C
Tj = 130 °C
Ts = 80 °C
Tj = Tjmax
1250
7810
286
A
tp = 10 ms
Tj = Tjmax
A2s
W
°C
Ptot
Power dissipation
Tjmax
Maximum Junction Temperature
130
Copyright Vincotech
2
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
5500
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min 12,7
min 12,7
> 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
VGE = VCE
0,0052 25
5,3
5,8
6,3
V
V
25
150
1,58
1,93
2,39
2,07
15
0
150
1200
0
25
25
2
µA
nA
Ω
IGES
rg
20
240
5
Cies
Input capacitance
8600
320
f = 1 MHz
0
25
25
pF
Cres
Reverse transfer capacitance
Thermal
Thermal grease
λ = 2,5 W/mK
(Silicone-based)
Rth(j-s)
Thermal resistance junction to sink
0,17
K/W
Dynamic
25
64
65
66
td(on)
Turn-on delay time
125
150
25
71
tr
Rise time
125
150
25
71
70
597
Rgoff = 4 Ω
Rgon = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
681
708
28
45
15/0
700
149
tf
90
26,612
35,580
38,379
11,669
16,842
18,783
Qr
FWD
Qr
FWD
Qr
FWD
= 9,6 μC
= 19,7 μC
= 24,5 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
4
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
150
2,50
2,53
2,7
Forward voltage
Reverse leakage current
Thermal
VF
IR
V
150
25
180
1200
150
µA
28000
Thermal grease
λ = 2,5 W/mK
(Silicone-based)
Rth(j-s)
Thermal resistance junction to sink
0,31
K/W
Dynamic
25
41
54
61
IRRM
125
150
25
Peak recovery current
A
461
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
625
713
ns
di/dt = 800 A/μs
di/dt = 1170 A/μs
di/dt = 1197 A/μs
9,606
19,735
24,477
3,568
7,410
9,263
98
Recovered charge
15/0
700
149
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
61
66
Rectifier Diode
Static
25
1,46
1,41
Forward voltage
Reverse leakage current
Thermal
VF
IR
140
V
125
25
50
1600
µA
150
1100
Thermal grease
λ = 2,5 W/mK
(Silicone-based)
Rth(j-s)
Thermal resistance junction to sink
0,32
K/W
Copyright Vincotech
5
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Thyristor
Static
25
125
1,11
1,06
1,2
VF
Forward voltage
V
V
125
Vto
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
130
130
130
130
130
25
0,85
3,2
rt
mΩ
V/µs
A/µs
µs
(dv/dt)cr
1000
100
(di/dt)cr
tq
IH
150
220
550
1,98
100
mA
mA
V
IL
Latching current
25
VGT
IGT
VGD
IGD
Gate trigger voltage
25
Gate trigger current
25
mA
V
Gate non-trigger voltage
Gate non-trigger current
Thermal
130
115
0,25
6
mA
Thermal grease
λ = 2,5 W/mK
(Silicone-based)
Rth(j-s)
Thermal resistance chip to sink
0,27
1
K/W
Thermistor
Rated resistance
R
ΔR/R
R
25
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
A(25/50)
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
6
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,17
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,70E-02
2,42E-02
6,55E-02
1,51E-02
7,58E-03
1,07E-02
1,97E+00
3,38E-01
7,73E-02
1,74E-02
2,43E-03
3,85E-04
Copyright Vincotech
7
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
I
I
I
I
At
D =
single pulse
80 ºC
Ts
VGE
Tj
=
=
±15
V
=
Tjmax
Copyright Vincotech
8
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
150 °C
tp / T
0,31
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,61E-02
5,67E-02
1,31E-01
3,13E-02
1,79E-02
1,66E-02
1,62E+00
3,07E-01
6,80E-02
1,30E-02
1,79E-03
3,53E-04
Copyright Vincotech
9
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
tp / T
0,32
Tj:
K/W
Diode thermal model values
R (K/W)
τ
(s)
5,79E-02
5,86E-02
1,36E-01
3,23E-02
1,85E-02
1,71E-02
1,62E+00
3,07E-01
6,80E-02
1,30E-02
1,79E-03
3,53E-04
Copyright Vincotech
10
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Rectifier Thyristor Characteristics
figure 1.
Thyristor
figure 2.
Thyristor
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
10-1
10-2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-5
10-4
10-3
10-2
10-1
100
101
tp =
Tj=
250
25, 125
μs
°C
D =
R th(j-s)
tp / T
=
0,27
K/W
FWD thermal model values
R (K/W)
4,97E-02
5,02E-02
1,16E-01
2,77E-02
1,59E-02
1,31E-02
Tau (s)
1,62E+00
3,07E-01
6,80E-02
1,30E-02
1,79E-03
3,53E-04
Rectifier Thyristor Characteristics
figure 3.
Thyristor
Gate trigger characteristics
Copyright Vincotech
11
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
PTC Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
12
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
700
15/0
4
V
V
Ω
Ω
T
j
:
125 °C
150 °C
VCE
VGE
I C
=
=
=
700
15/0
149
V
V
A
Tj:
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
700
15/0
4
V
V
Ω
:
700
15/0
149
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
13
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
700
15/0
4
°C
150
700
15/0
149
°C
V
Tj =
Tj =
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
25 °C
At
VCE
=
700
15/0
4
V
V
Ω
25 °C
At
VCE
=
700
15/0
149
V
V
A
:
Tj
125 °C
150 °C
:
Tj
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
14
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
700
25 °C
V
700
15/0
149
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
15/0
4
V
:
Tj
125 °C
150 °C
=
:
Tj
=
=
Ω
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
700
25 °C
At
VCE
=
V
V
At
VCE
=
700
V
V
A
25 °C
15/0
4
:
Tj
125 °C
150 °C
15/0
149
:
125 °C
150 °C
VGE
=
=
VGE
I C
=
Tj
Ω
R gon
=
Copyright Vincotech
15
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
d
iF
/
/
dt
dt
diF/dt
t
t
t
t
dirr
t
t
t
t
dir r/dt
i
i
i
i
i
i
i
i
25 °C
At
VCE
=
700
15/0
4
V
V
Ω
At
VCE
VGE
I C
=
700
15/0
149
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
4
4
Ω
Copyright Vincotech
16
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
T j
Rgon
R goff
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VCE
VGE
VGE
tEoff
VCE
tEon
0
VGE (0%) =
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
700
V
700
151
0,065
0,626
V
151
A
A
0,681
1,021
μs
μs
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
700
V
700
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
151
A
151
A
0,045
μs
0,071
μs
tr
=
Copyright Vincotech
17
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eon
Eoff
tEoff
tEon
P off (100%) =
Eoff (100%) =
105,38
kW
mJ
μs
P on (100%) =
Eon (100%) =
105,38
35,58
0,63
kW
mJ
μs
16,84
1,02
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
700
V
151
A
-54
A
0,625
μs
t rr
=
Copyright Vincotech
18
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
IF
Qr
Erec
tErec
Prec
151
A
105,38
7,41
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
19,74
1,00
μC
μs
mJ
μs
t Qr
=
tErec
=
1,00
Copyright Vincotech
19
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Ordering Code & Marking
Version
Ordering Code
with std lid (black V23990-K32-T-2-PM)
with std lid (black V23990-K32-T-2-PM)+PCM
80-M3166BA140SC03-K489G42-/0A/
80-M3166BA140SC03-K489G42-/3A/
80-M3166BA140SC03-K489G42-/5A/
with std lid (black V23990-K32-T-2-PM)+thermal grease
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTV V
LLLLL
SSSS
WWYY
Outline
PCB pad table
PCB pad table
Function
Pad positions refers to center point. For more informations on pad design please see package data.
Pin
1
X
Y
Function
G36
Pin
52
X
Y
15,83 -25,3
Not assembled
Not assembled
2
3
53
54
55
56
57
58
59
60
61
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
3,42
3,42
3,42
3,42
-15,7
-12,5
-9,3
ACIn1
ACIn1
ACIn1
ACIn1
4
5
6
-6,1
7
DC-
15,83
15,83
15,83
15,83
15,7
18,9
22,1
25,3
Not assembled
Not assembled
8
DC-
DC-
DC-
9
-39,32 22,1
-39,32 25,3
Not assembled
Not assembled
Br
10
Br
11
12
13
Therm1
Therm2
DC-
62
63
64
8,13
8,13
-25,3
-22,1
8,13
8,13
22,1
25,3
-40,22 -15,7
ACIn1
ACIn1
ACIn1
ACIn1
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
DC-
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
-40,22 -12,5
-40,22 -9,3
-40,22 -6,09
ACIn3
ACIn3
ACIn3
ACIn3
DC-
41,82 -15,38
41,82 -12,18
41,82 -8,98
41,82 -5,79
-10,18 -25,3 DC+Rect
-10,18 -22,1 DC+Rect
-10,18 -18,9 DC+Rect
-10,18 -15,7 DC+Rect
0,43
0,43
22,1
25,3
DC-
G34
-1,07 -25,3
-1,82 -15,38
-1,82 -12,18
-1,82 -8,98
-1,82 -5,79
-10,18 -9,5
-10,18 -6,3
DC+Br
DC+Br
DC+Br
DC+Br
Br
ACIn3
ACIn3
ACIn3
ACIn3
-10,18
-10,18
6,3
9,5
-10,18 22,1
-10,18 25,3
Not assembled
Br
Not assembled
Not assembled
Not assembled
Not assembled
-53,82 -25,3 DC+Rect
-53,82 -22,1 DC+Rect
-53,82 -18,9 DC+Rect
-53,82 -15,7 DC+Rect
ACIn2
23,95 -15,02
23,95 -11,82
23,95 -8,63
23,95 -5,42
-19,22 -25,3
-19,7 -15,02
-19,7 -11,82
-53,82 -9,5
-53,82 -6,3
DC+Br
DC+Br
ACIn2
ACIn2
ACIn2
G32
Not assembled
-53,82
-53,82
6,3
9,5
DC+Br
DC+Br
ACIn2
ACIn2
ACIn2
ACIn2
-53,82 22,1
88 -53,82 25,3
Br
Br
-19,7 -8,62
-19,7 -5,42
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
S27
-32,82 8,74
-32,82 11,94
G27
Br
4,32
4,32
22,1
25,3
Br
Copyright Vincotech
20
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T27
IGBT
1200 V
150 A
150 A
140 A
125 A
Brake Switch
Brake Diode
D27
D31, D33, D35
Th32, Th34, Th36
PTC
FWD
Rectifier
Thyristor
PTC
1200 V
1600 V
1600 V
Rectifier Diode
Rectifier Thyristor
Thermistor
Copyright Vincotech
21
12 Jun. 2017 / Revision 2
80-M3166BA140SC03-K489G42
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M3166BA140SC03-K489G42-D2-14
10 Aug. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
12 Jun. 2017 / Revision 2
相关型号：
80.000MHZ49SMD/3/10/-20+70/8
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49SMD/3/7.5/0+50/8
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/3/10/-20+70/32
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/3/100/0+50/SR
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/3/7.5/-10+60/SR
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/3/7.5/0+50/SR
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/50/30/-20+70/8
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/50/30/0+50/32
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZHC-50/3/10/0/30PF/AT5
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, RESISTANCE WELDED, HERMATIC SEALED PACKAGE-2
EUROQUARTZ
80.000MHZHC-50/3/10/0/50PF/AT5
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, RESISTANCE WELDED, HERMATIC SEALED PACKAGE-2
EUROQUARTZ
80.000MHZHC-50/3/10/0/SR/AT5
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, RESISTANCE WELDED, HERMATIC SEALED PACKAGE-2
EUROQUARTZ
80.000MHZHC-50/3/10/10/30PF/AT5
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, RESISTANCE WELDED, HERMATIC SEALED PACKAGE-2
EUROQUARTZ
©2020 ICPDF网 联系我们和版权申明