A0-VS126PA100M7-L997F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | A0-VS126PA100M7-L997F7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总17页 (文件大小：1724K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
1200 V / 100 A
VINcoPACK E3
Features
VINco E3 housing
● IGBT M7 technology with low V CEsat
and improved EMC behavior
● New SoLid Cover Technology for higher reliability
● Industry standard housing
● Press-fit pin and pre-applied phase-change
Thermal Interface Material available
Schematic
Target applications
● Industrial Drives
Types
● A0-VS126PA100M7-L997F70
● A0-VP126PA100M7-L997F70T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
114
200
245
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
1
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
92
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
174
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
9
mm
mm
Clearance
min. 12,7
> 200
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
2
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,01
100
25
5,4
6
6,6
V
V
25
1,61
1,82
1,91
2,05
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
110
500
µA
nA
Ω
20
none
21000
700
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
280
15
600
100
650
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,39
K/W
Dynamic
25
118
118
118
10
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
12
13
174
200
206
83
Rgoff = 2 Ω
Rgon = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
100
tf
96
107
3,255
4,868
5,368
6,605
8,774
9,490
Qr
FWD
Qr
FWD
Qr
FWD
= 11,6 ꢀC
= 17,3 ꢀC
= 19,2 ꢀC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
3
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
150
1,82
1,96
1,97
2,15
60
Forward voltage
VF
IR
100
V
Reverse leakage current
1200
25
µA
Thermal
phase-change
material
Rth(j-s)
Thermal resistance junction to sink
0,55
K/W
λ = 3,4 W/mK
Dynamic
25
178
166
165
IRRM
125
150
25
Peak recovery current
A
149
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
312
339
ns
di/dt = 9387 A/ꢀs
di/dt = 7872 A/ꢀs ±15
di/dt = 8350 A/ꢀs
11,601
17,270
19,181
5,138
7,753
8,588
4044
2649
2147
600
100
Recovered charge
ꢀC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50) Tol. ±2 %
B(25/100) Tol. ±2 %
3375
3437
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
4
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
ꢀs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
ꢀs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
ꢀs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,39
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,95E-02
5,41E-02
7,95E-02
1,43E-01
5,57E-02
2,51E-02
4,23E+00
1,02E+00
2,16E-01
5,11E-02
1,37E-02
5,61E-04
Copyright Vincotech
5
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 5.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80
IC=
VGE
VCC
100
A
V
V
Ts
=
ºC
V
=
=
±15
600
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
6
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
ꢀs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,55
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,06E-02
6,23E-02
1,10E-01
2,00E-01
1,04E-01
4,09E-02
4,12E+00
8,89E-01
1,86E-01
4,16E-02
1,19E-02
8,48E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
7
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
2
V
V
Ω
:
600
±15
100
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
8
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
2
°C
V
150
600
±15
100
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
100
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
9
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
600
±15
100
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I I
I I
I
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
100
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
10
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
d
iF
/
d
t
diF/dt
dirr/dt
t
t
t
t
t
t
t
t
i
i
i
i
dirr
/dt
i
i
i
i
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
2
2
Ω
Copyright Vincotech
11
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
VCE
IC
IC
VGE
VCE
tEoff
VGE
tEon
-15
VGE (0%) =
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
V
600
V
100
A
100
A
0,200
0,717
ꢀs
ꢀs
0,118
0,318
ꢀs
ꢀs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
V
600
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
100
A
100
A
0,096
µs
0,012
µs
tr
=
Copyright Vincotech
12
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
59,87
8,77
0,72
kW
mJ
ꢀs
P on (100%) =
Eon (100%) =
59,87
4,87
0,32
kW
mJ
ꢀs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
600
V
100
A
-166
0,312
A
I RRM (100%) =
t rr
ꢀs
=
Copyright Vincotech
13
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qr
Erec
IF
Prec
tErec
100
A
59,87
7,75
0,69
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
17,27
0,69
ꢀC
ꢀs
mJ
ꢀs
t Qr
=
tErec =
160
Copyright Vincotech
14
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
with thermal paste
A0-VS126PA100M7-L997F70
A0-VS126PA100M7-L997F70-/3/
A0-VP126PA100M7-L997F70T
A0-VP126PA100M7-L997F70T-/3/
without thermal paste and press-fit pins
with thermal paste and press-fit pins
Name
Date code
WWYY
Serial
VIN
VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
VIN WWYY LLLLL SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
0
0
0
0
0
0
Function
G12
19,05
22,86
34,29
38,1
2
S12
3
G11
4
S11
5
49,53
53,34
64,77
68,58
80,01
83,82
95,25
99,06
G14
6
S14
7
G13
8
S13
9
G16
10
11
12
S16
G15
S15
13 118,11 15,865
14 118,11 19,675
15 118,11 23,485
16 118,11 34,915
17 118,11 38,725
18 118,11 42,535
19 100,97 58,4
20 97,155 58,4
21 81,915 58,4
22 78,105 58,4
23 74,295 58,4
24 59,055 58,4
25 55,245 58,4
26 51,435 58,4
27 36,195 58,4
28 32,385 58,4
29 28,575 58,4
DC-123
DC-123
DC-123
DC+123
DC+123
DC+123
Therm1
Therm2
Ph3
Ph3
Ph3
Ph2
Ph2
Ph2
Ph1
Ph1
Ph1
30
31
32
33
34
35
0
0
0
0
0
0
42,535
38,725
34,915
23,485
19,675
15,865
DC+123
DC+123
DC+123
DC-123
DC-123
DC-123
Copyright Vincotech
15
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12 , T13 ,
T14 , T15 , T16
IGBT
1200 V
100 A
100 A
Inverter Switch
D11 , D12 , D13 ,
D14 , D15 , D16
FWD
1200 V
Inverter Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
16
06 Sep. 2017 / Revision 2
A0-VS126PA100M7-L997F70
A0-VP126PA100M7-L997F70T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 24
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
A0-Vx126PA100M7-L997F70x-D2-14
06 Sep. 2017
Marketing-name correction
All
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
06 Sep. 2017 / Revision 2
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