V23990-K200-A41-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-K200-A41-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总17页 (文件大小：3185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K200-A41-PM
datasheet
MiniSKiiP® 1 PIM
1200 V / 15 A
Features
MiniSkiip® 1 housing
● Solderless interconnection
● Trenchstop™ IGBT4 technology
Schematic
Target applications
● Industrial drives
Types
● V23990-K200-A41-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter / Brake Switch
VCES
IC
Collector-emitter voltage
1200
21
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
45
A
88
W
V
±20
10
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter / Brake Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
21
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
65
A
50 Hz Single Half Sine Wave
tp = 10 ms
21
A2s
W
°C
Total power dissipation
Tj = Tjmax
64
Maximum junction temperature
175
Rectifier Diode
VRRM
IF
Peak repetitive reverse voltage
1600
49
V
A
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
270
50 Hz Single Half Sine Wave
tp = 10 ms
Surge current capability
370
A2s
I2t
Ptot
Total power dissipation
Tj = Tjmax
64
W
Tjmax
Maximum junction temperature
150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
6,3
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
V
Creepage distance
mm
mm
For more informations see handling instructions
With std lid
Clearance
6,3
For more informations see handling instructions
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter / Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
5,3
5,8
6,3
V
V
1,58
1,86
2,14
2,22
2,07
Collector-emitter saturation voltage
VCEsat
15
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
120
none
890
30
Cies
Cres
f = 1 Mhz
0
25
25
pF
Reverse transfer capacitance
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,08
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
150
102
102
33
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
37
Rgon = 32 Ω
Rgoff = 32 Ω
ns
216
284
90
133
0,986
1,53
0,904
1,47
Turn-off delay time
Fall time
±15
600
15
Qr
Qr
= 1 μC
= 2,3 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
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04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter / Brake Diode
Static
25
2,37
2,47
2,71
Forward voltage
Reverse leakage current
Thermal
VF
IR
15
V
125
25
60
1200
150
µA
1800
λpaste = 3,4 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,48
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
8
11
IRRM
trr
Peak recovery current
Reverse recovery time
Recovered charge
A
299
541
0,976
2,33
0,381
0,966
73
ns
di/dt = 309 A/μs
di/dt = 352 A/μs
Qr
±15
600
15
μC
Reverse recovered energy
Erec
mWs
A/µs
(dirf/dt)max
Peak rate of fall of recovery current
47
Rectifier Diode
Static
25
1,17
1,13
Forward voltage
VF
IR
35
V
125
Reverse leakage current
1600
25
50
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,10
K/W
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
A(25/50)
7,635*10-3
1,731*10-5
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
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04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter / Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,08
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,02E-02
7,53E-02
2,00E-01
5,79E-01
1,08E-01
7,24E-02
4,99E-03
8,05E+00
6,86E-01
1,22E-01
4,09E-02
7,96E-03
1,22E-03
5,90E-04
Copyright Vincotech
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04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter / Brake Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80
IC
=
15
A
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
I
t
VCE
Tj
=
VCE
Tj
≤
600
175
V
ºC
600
175
V
ºC
≤
≤
Copyright Vincotech
6
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter / Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
1,44
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
6,32E-02
1,25E-01
4,72E-01
4,73E-01
2,06E-01
1,06E-01
2,64E+00
3,53E-01
5,08E-02
1,56E-02
2,93E-03
3,09E-04
Copyright Vincotech
7
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
tp / T
1,10
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,03E-01
1,17E-01
5,19E-01
2,38E-01
7,64E-02
4,71E-02
7,04E+00
3,94E-01
5,87E-02
2,15E-02
3,49E-03
6,93E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
8
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
600
±15
32
V
V
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
150 °C
Ω
Ω
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
150 °C
150 °C
R gon
Copyright Vincotech
9
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
32
°C
V
150
600
±15
15
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
t
t
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
=
=
=
600
±15
32
V
V
Ω
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
150 °C
150 °C
VGE
R gon
Copyright Vincotech
10
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
32
V
V
Ω
VCE=
VGE =
I C=
600
±15
15
V
V
A
150 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
150 °C
R gon
Copyright Vincotech
11
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
d
iF/dt
d
iF/
dt
t
t
i
dirr/dt
dirr
/
dt
i
With an inductive load at
25 °C
With an inductive load at
25 °C
150 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
150 °C
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
150
°C
Ω
R gon
R goff
=
=
32
32
Ω
Copyright Vincotech
12
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
32 Ω
32 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
15
V
600
15
V
A
A
284
ns
102
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
600
15
V
600
15
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
133
ns
tr
=
37
ns
Copyright Vincotech
13
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
15
V
I F (100%) =
Q r (100%) =
15
A
A
2,33
μC
11
A
541
ns
t rr
=
Copyright Vincotech
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04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
Ordering Code
V23990-K200-A41-/0A/-PM
V23990-K200-A41-/0B/-PM
V23990-K200-A41-/1A/-PM
V23990-K200-A41-/1B/-PM
V23990-K200-A41-/4A/-PM
V23990-K200-A41-/4B/-PM
V23990-K200-A41-/5A/-PM
V23990-K200-A41-/5B/-PM
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
VIN
LLLLL
SSSS
Type&Ver
NNNNNNNVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
PCB pad table
Pin
X
Y
Function
G5
15,93 -14,6
1
2
15,93
-9,8
W
3
4
Not assembled
15,93
15,93
-0,2
7,62
+T
5
-T
G6
6
15,93 12,62
7
15,93
15,8
-DC/W
8
Not assembled
9
8,23
8,23
7,73
7,73
12,62
15,8
G4
10
-DC/V
G3
V
11
12
13
-14,6
-9,8
Not assembled
Not assembled
14
15
16
17
18
19
20
21
22
0,53
0,53
12,62
15,8
G2
-DC/U
G1
U
-0,47 -14,6
-0,47
-5,47
-5,47
-9,8
-5
+B
B
5,35
-7,17 12,62
GB
-B
-7,17
15,8
23
24
Not assembled
-9,8 +DC
-8,07
25 -15,02 -15,8
26 -15,02 -9,8
+RECT
L3
27 -15,02
28 -15,02
0
L2
9,8
L1
29 -15,02 15,8
-RECT
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
15
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1, T2, T3, T4, T5,
T6, T7
IGBT
1200 V
15 A
15 A
35 A
Inverter / Brake Switch
D1, D2, D3, D4, D5,
D6, D7
FWD
1200 V
1600 V
Inverter / Brake Diode
D8, D9, D10, D11,
D12, D13
Rectifier
PTC
Rectifier Diode
Thermistor
PTC1
Copyright Vincotech
16
04 Jul. 2019 / Revision 3
V23990-K200-A41-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 120
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 1 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-K200-A41-D3-14
04 Jul. 2019
Correction of Ic/If values
1,2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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04 Jul. 2019 / Revision 3
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