V23990-K203-B10-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-K203-B10-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总30页 (文件大小：1423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K203-B10-PM
datasheet
MiniSKiiP® 1 PIM + PFC
Features
600 V / 15 A
MiniSKiiP® 1 housing
● Solderless interconnection
● IGBT Trench 3 technology
Target Applications
● Industrial drives
Schematic
Types
● V23990-K203-B10-PM
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
30
V
A
T j = T jmax
t p = 10 ms
T j = T jmax
T s = 80 °C
T j=150°C
T s = 80 °C
I FSM
Surge (non-repetitive) forward current
I2t-value
200
200
A
I 2
t
A2s
P tot
Power dissipation
46
W
T jmax
Maximum Junction Temperature
150
°C
PFC Switch
V CE
I C
Collector-emitter breakdown voltage
650
26
V
A
T j = T jmax
T s = 80 °C
DC collector current
I CRM
t p limited by T jmax
Repetitive peak collector current
Turn off safe operating area
90
60
A
A
V CE ≤ 650V, T j ≤ T op max
T j = T jmax
P tot
V GE
T s = 80 °C
Power dissipation
68
20
W
V
Gate-emitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
5
µs
V
400
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
650
37
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
90
A
67
W
°C
T jmax
Maximum Junction Temperature
175
Inverter Switch
V CE
I C
Collector-emitter breakdown voltage
600
21
V
A
T j = T jmax
T s = 80 °C
DC collector current
I CRM
t p limited by T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
45
A
V CE ≤ 600V, T j ≤ T op max
T j = T jmax
30
A
P tot
V GE
T s = 80 °C
53
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
20
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
40
A
38
W
°C
T jmax
Maximum Junction Temperature
175
Thermal Properties
T stg
T op
Storage temperature
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Isolation Properties
Isolation voltage
V is
t
= 2 s
DC Test Voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
2
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Rectifier Diode
25
125
25
125
25
125
25
1
1,51
1,42
0,86
0,79
26
1,75
V F
V to
r t
Forward voltage
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
25
25
mΩ
mA
25
0,1
I r
1600
125
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
1,51
PFC Switch
25
125
25
125
25
125
25
4,2
1
5,1
5,6
2,6
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
0,00043
30
V
V
2,1
2,3
15
0
0,01
400
650
0
mA
nA
Ω
20
125
none
25
125
25
125
25
125
25
125
25
125
25
22
21
28,2
27,8
197
222
6
ns
t d(off)
t f
Turn-off delay time
Fall time
R goff = 8 Ω
R gon = 16 Ω
±15
300
15
37
0,278
0,507
0,15
0,228
E on
Turn-on energy loss
Turn-off energy loss
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
125
1630
108
50
Output capacitance
Reverse transfer capacitance
Gate charge
f
= 1 MHz
0
25
25
25
±15
480
30
167
nC
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
K/W
Thermal resistance junction to sink
1,40
PFC Diode
25
1
2,1
2,9
10
V F
I rm
I RRM
Forward voltage
30
V
125
25
125
25
125
25
125
25
125
25
125
25
1,83
Reverse leakage current
Peak recovery current
650
300
µA
A
8,06
14,94
94,2
128,9
0,31
1,11
0,05
0,16
526
t rr
Reverse recovery time
ns
Q rr
R gon = 16 Ω
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
±15
15
µC
E rec
mWs
A/µs
( di rf/dt )max
125
195
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
K/W
Thermal resistance junction to sink
1,42
copyright Vincotech
3
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Inverter Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
25
125
25
125
25
125
25
5
5,8
6,5
2,2
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,00021
15
V
V
1,1
1,73
1,87
15
0
0,05
300
600
0
mA
nA
Ω
20
125
none
25
125
25
125
25
125
25
125
25
125
25
17,8
17,8
18,2
22,5
135
155
100
103
0,39
0,5
Rise time
ns
t d(off)
t f
Turn-off delay time
R goff = 8 Ω
R gon = 16 Ω
±15
300
15
Fall time
E on
Turn-on energy loss
mWs
pF
0,35
0,45
E off
C ies
C oss
C rss
Q G
Turn-off energy loss
125
Input capacitance
860
55
Output capacitance
f
= 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
24
±15
480
15
87
nC
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
K/W
Thermal resistance junction to sink
1,81
Inverter Diode
25
125
25
125
25
125
25
125
25
125
25
0,8
1,8
1,86
8,25
10,6
217,5
332,1
0,81
1,45
43
2,1
V F
I RRM
Diode forward voltage
20
15
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
Q rr
R gon = 16 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
300
µC
( di rf/dt )max
E rec
A/µs
mWs
63
0,15
0,29
125
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
R th(j-s)
K/W
Thermal resistance junction to sink
2,51
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
1000
Ω
%
R 100 = 1670 Ω
100
100
25
-3
3
1670,3125
Ω
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
B (25/50)
25
B (25/100)
B-value
25
Vincotech NTC Reference
E
copyright Vincotech
4
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 1.
Typical output characteristics
IGBT
figure 2.
Typical output characteristics
I C = f(V CE
IGBT
I C = f(V CE
)
)
60
60
50
40
30
20
10
0
50
40
30
20
10
0
0
VCE (V)
VCE (V)
1
2
3
4
5
0
1
2
3
4
5
At
At
t p
T j =
V GE from
t p
=
=
250
25
μs
°C
250
125
μs
°C
T j =
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
16
50
40
30
20
10
0
12
8
4
0
0
2
4
6
8
10
VGE (V)
VF (V)
0
0,5
1
1,5
2
2,5
3
At
At
T j =
t p
25/125
250
25/125
250
T j =
°C
μs
V
°C
μs
t p
=
=
V CE
=
10
copyright Vincotech
5
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
1,6
1,2
0,8
0,4
0,0
1,2
Eon High T
1
Eon High T
Eon Low T
Eon Low T
0,8
0,6
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
0,4
0,2
0
0
32
64
96
128
160
R G ( Ω )
0
5
10
15
20
25
30
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
16
Ω
Ω
15
A
=
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,5
0,4
0,3
0,2
0,1
0
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
32
64
96
128
160
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
V
=
I C =
16
Ω
15
A
copyright Vincotech
6
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
1,00
tdoff
tdoff
tf
tf
0,10
0,10
0,01
0,00
tdon
tr
tdon
0,01
tr
0,00
I
C (A)
R G ( Ω )
160
0
5
10
15
20
25
30
0
32
64
96
128
With an inductive load at
With an inductive load at
T j =
T j =
125
300
15
°C
V
125
300
15
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
16
Ω
Ω
15
A
=
8
figure 11.
FWD
figure 12.
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon
)
0,6
0,5
0,4
0,3
0,2
0,1
0
0,5
trr
trr
0,4
0,3
0,2
0,1
trr
trr
0
0
I
C (A)
R gon ( Ω )
160
0
5
10
15
20
25
30
32
64
96
128
At
T j =
At
T j =
V R =
I F =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
=
V
A
=
V GE =
16
Ω
15
V
copyright Vincotech
7
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
2,4
2
1,6
Qrr
Qrr
1,2
0,8
0,4
1,6
1,2
0,8
0,4
0
Qrr
Qrr
0
0
0
5
10
15
20
25
30
32
64
96
128
160
R gon ( Ω)
I
C (A)
At
At
T j =
T j =
V R =
I F =
°C
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
=
=
V
V
Ω
A
R gon
=
V GE =
16
15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
12
10
8
12
10
8
IRRM
IRRM
IRRM
IRRM
6
6
4
4
2
2
0
0
0
0
5
10
15
20
25
30
32
64
96
128
160
R gon ( Ω )
I C (A)
At
At
T j =
T j =
°C
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
=
=
V R =
I F =
V
V
Ω
A
R gon
=
V GE =
16
15
V
copyright Vincotech
8
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
700
750
dI0/dt
dIrec/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
600
500
400
300
200
100
0
600
dIo/dtLow T
di0/dtHigh T
450
300
150
0
dIrec/dtHigh T
dIo/dtLow T
dIrec/dtLow T
dIrec/dtHigh T
dIrec/dtLow T
di0/dtHigh T
0
5
10
15
20
25
30
0
32
64
96
128
160
I C (A)
R gon ( Ω )
At
T j =
At
T j =
V R =
I F =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
=
V
A
=
V GE =
16
Ω
15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-4
10-3
10-2
10-1
100
10110
At
At
t
p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
1,81
K/W
2,51
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
4,79E-02 6,42E+00
2,09E-01 5,50E-01
7,40E-01 1,07E-01
5,03E-01 1,63E-02
1,67E-01 2,67E-03
1,40E-01 2,31E-04
R (K/W) Tau (s)
5,06E-02 9,02E+00
2,53E-01 6,56E-01
8,83E-01 1,18E-01
7,35E-01 2,86E-02
3,35E-01 4,82E-03
2,57E-01 6,88E-04
copyright Vincotech
9
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
100
80
60
40
20
0
30
25
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
80
60
40
20
0
30
25
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
10
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 25.
IGBT
figure 26.
IGBT
Safe operating area as a function
of collector-emitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
102
20
10uS
17,5
15
100uS
1mS
101
100
10-1
12,5
120V
480V
10mS
10
7,5
5
100mS
DC
2,5
0
10-2
100
0
20
40
60
80
100
Q g (nC)
101
102
VCE (V)
103
At
At
D =
single pulse
I C
=
15
A
T s =
80
ºC
V
V GE
=
15
T jmax
T j =
ºC
figure 27.
IGBT
figure 28.
IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
t sc = f(V GE
)
I C(sc) = f(V GE)
14
250
225
200
175
150
125
100
75
12
10
8
6
4
50
2
25
0
0
10
11
12
13
14
15
12
13
14
15
16
17
18
19
20
VGE (V)
V GE(V)
At
At
V CE
=
600
175
V
V CE
≤
600
175
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
11
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Inverter Characteristics
figure 29.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
40
IC MAX
30
20
10
0
0
200
400
600
800
VCE (V)
At
T j =
125 °C
16 Ω
8 Ω
R gon
R goff
=
=
copyright Vincotech
12
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 1.
IGBT
figure 2.
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
60
60
45
30
15
45
30
15
0
0
0
0
VDS (V)
VDS (V)
1
2
3
4
5
1
2
3
4
5
6
At
At
t p
=
t p =
250
25
μs
°C
250
126
μs
T j =
T j =
°C
V CE from
V CE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V CE
)
30
90
75
60
45
30
15
0
25
20
15
10
5
0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
VF (V)
VGS (V)
2
4
6
8
10
At
At
t p
=
T j =
t p
=
T j =
250
10
μs
V
°C
250
μs
°C
25/125
25/125
V CE
=
copyright Vincotech
13
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
1,2
1,2
Eon
1
1
Eon
0,8
0,6
0,8
0,6
0,4
0,2
0
Eon
Eon
Eoff
0,4
Eoff
Eoff
Eoff
0,2
0
0
16
32
48
64
80
I C (A)
R G ( Ω )
0
5
10
15
20
25
30
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
16
Ω
Ω
15
A
=
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,2
0,15
0,1
0,2
0,15
0,1
Erec
Erec
Erec
0,05
0,05
Erec
0
0
0
16
32
48
64
80
R G ( Ω )
I C (A)
0
5
10
15
20
25
30
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
16
Ω
Ω
15
A
=
8
copyright Vincotech
14
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdoff
tf
0,1
0,1
tdon
tr
tf
tdon
0,01
0,01
tr
0,001
0,001
R
G ( Ω )
80
I C (A)
0
5
10
15
20
25
30
0
16
32
48
64
With an inductive load at
With an inductive load at
T j =
T j =
125
300
15
°C
V
125
300
15
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
16
Ω
Ω
15
A
=
8
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,18
0,16
0,14
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,24
trr
trr
0,20
0,16
0,12
0,08
0,04
trr
trr
0,00
0
10
20
30
40
50
60
70
R gon ( Ω )
I C (A)
0
5
10
15
20
25
30
At
T j =
At
T j =
V R =
I F =
°C
V
°C
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
V
A
V
=
V
=
V GS =
16
Ω
15
copyright Vincotech
15
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
1,5
1,2
0,9
0,6
0,3
0,0
1,5
Qrr
1,2
0,9
0,6
0,3
Qrr
Qrr
Qrr
0,0
0
I
C (A)
R
gon ( Ω)
70
0
5
10
15
20
25
30
10
20
30
40
50
60
At
At
T j =
T j =
V R =
I F =
°C
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
V
V
Ω
=
A
=
16
V GS
=
15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
16
14
12
10
8
25
IRRM
20
15
10
5
IRRM
IRRM
6
IRRM
4
2
0
0
0
10
20
30
40
50
60
70
I C (A)
R gon ( Ω )
0
5
10
15
20
25
30
At
T j =
At
T j =
°C
V
°C
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
V R =
I F =
V
A
V
=
V
=
16
Ω
V GS
=
15
copyright Vincotech
16
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
2000
1000
900
800
700
600
500
400
300
200
100
0
dI0/dt
dIrec/dt
dI0/dt
dIrec/dt
1750
1500
1250
1000
750
500
250
0
0
10
20
30
40
50
60
70
gon ( Ω)
I C (A)
R
0
5
10
15
20
25
30
At
At
T j =
T j =
V R =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
=
I F
=
V
A
=
V GS
=
16
Ω
15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,1
0,05
0,02
0,01
0,02
0,01
0,005
0.000
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
10110
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
1,40
K/W
1,42
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
7,09E-02
2,04E-01
6,77E-01
2,25E-01
1,65E-01
5,35E-02
Tau (s)
R (K/W)
2,89E-02
1,06E-01
6,58E-01
3,38E-01
1,58E-01
1,27E-01
Tau (s)
8,41E+00
2,80E+00
4,27E-01
1,13E-01
3,41E-02
8,19E-03
1,40E-03
9,99E-01
1,49E-01
4,10E-02
8,96E-03
1,55E-03
copyright Vincotech
17
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
150
120
90
60
30
0
40
30
20
10
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
150
120
90
60
30
0
50
40
30
20
10
0
T s (
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
18
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
PFC Characteristics
figure 25.
IGBT
figure 26.
IGBT
Safe operating area as a function
of collector-emitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
102
17,5
10uS
15
100uS
101
12,5
120 V
1mS
10
7,5
5
10mS
480 V
100
DC
100mS
10-1
2,5
0
10-2
0
25
50
75
100
125
150
175
Qg (nC)
200
100
102
103
101
VCE (V)
At
At
D =
single pulse
I C
=
15
A
T s =
80
ºC
V GE
=
15
V
T jmax
T j =
figure 27.
IGBT
figure 28.
IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
t sc = f(V GE
)
I C(sc) = f(V GE)
14
500
12
10
8
400
300
200
100
6
4
2
0
0
10
11
12
13
14
15
VGE (V)
12
14
16
18
VGE (V) 20
At
At
V CE
=
600
175
V
V CE
≤
600
175
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
19
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
figure 29.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
80
IC MAX
60
40
20
0
0
200
400
600
800
VCE (V)
At
T j =
125 °C
16 Ω
8 Ω
R gon
R goff
=
=
copyright Vincotech
20
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
50
40
30
20
10
0
101
100
10-1
10-2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
t p (s)
VF (V)
0
0,5
1
1,5
2
2,5
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
T j =
°C
μs
D =
R th(j-s) =
25/125
250
t p
=
1,51
K/W
figure 3.
Power dissipation as a
Rectifier Diode
figure 4.
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
100
80
60
40
20
0
50
40
30
20
10
0
T s
(
o C)
T s (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
At
T j =
At
T j =
150
ºC
150
ºC
copyright Vincotech
21
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Thermistor
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R T = f(T )
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
25
50
75
100
125
T (°C)
copyright Vincotech
22
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Switching Definitions Inverter
General conditions
T j
=
=
=
125 °C
16 Ω
8 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
150
200
%
IC
%
125
tdoff
VCE
150
100
VGE 90%
VCE 90%
VCE
75
50
25
0
100
IC
VGE
tdon
tEoff
50
IC 1%
VCE 3%
VGE10%
IC10%
0
-25
-50
VGE
tEon
-50
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (us)
0,6
2,7
2,78
2,86
2,94
3,02
3,1
time(us)
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
300
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V
300
15
V
A
A
t doff
=
=
0,15
0,44
μs
μs
t don
=
=
0,02
0,20
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
140
175
%
%
Ic
120
fitted
IC
150
VCE
100
125
IC 90%
VCE
80
100
IC90%
IC
60%
60
75
tr
IC 40%
40
50
20
25
IC10%
IC10%
0
0
tf
-20
-25
0,05
0,1
0,15
0,2
0,25
0,3
0,35
2,8
2,83
2,86
2,89
2,92
2,95
time(us)
time (us)
V C (100%) =
I C (100%) =
t f =
300
15
V
V C (100%) =
I C (100%) =
t r =
300
15
V
A
A
0,10
μs
0,02
μs
copyright Vincotech
23
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Switching Definitions Inverter
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
120
175
Pon
%
Poff
Eoff
%
150
125
100
75
100
80
60
40
20
0
Eon
50
25
VGE 90%
VCE
3%
IC
1%
VGE 10%
0
tEoff
tEon
-25
-20
2,7
2,8
2,9
3
3,1
3,2
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
time (us)
time(us)
P off (100%) =
E off (100%) =
4,50
0,45
0,44
kW
P on (100%) =
E on (100%) =
4,50
0,50
0,20
kW
mJ
μs
mJ
μs
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
0
IRRM10%
fitted
-50
-100
-150
IRRM90%
IRRM100%
2,7
2,8
2,9
3
3,1
3,2
3,3
3,4
time(us)
V d (100%) =
I d (100%) =
300
V
15
A
I RRM (100%) =
t rr
11
A
=
0,33
μs
copyright Vincotech
24
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Switching Definitions Inverter
figure 8.
FWD
figure 9.
Turn-on Switching Waveforms & definition of t Erec
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
125
%
%
Erec
Id
Qrr
100
75
100
50
tQrr
tErec
50
0
25
Prec
-50
-100
0
-25
2,6
2,8
3
3,2
3,4
3,6
3,8
2,6
2,8
3
3,2
3,4
3,6
3,8
time(us)
time(us)
I d (100%) =
Q rr (100%) =
15
A
P rec (100%) =
E rec (100%) =
4,50
0,29
0,71
kW
mJ
μs
1,45
0,71
μC
μs
t Q rr
=
t E rec =
copyright Vincotech
25
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Switching Definitions PFC
General conditions
T j
=
=
=
125 °C
16 Ω
8 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
140
250
%
%
120
IC
tdoff
200
150
100
VGE
VCE
90%
90%
80
60
IC
VCE
100
40
tdon
VGE
tEoff
50
20
0
IC
1%
VCE
VCE3%
VGE10%
IC10%
0
-20
VGE
tEon
-50
-40
2,9
2,95
3
3,05
3,1
3,15
3,2
3,25
time(us)
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (us)
V GE (0%) =
0
V
V
V
A
V GE (0%) =
0
V
V
V
A
V GE (100%) =
V C (100%) =
I C (100%) =
15
V GE (100%) =
V C (100%) =
I C (100%) =
15
300
15
300
15
t doff
=
=
0,22
0,33
μs
μs
t don
=
=
0,02
0,16
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
140
250
%
%
Ic
120
VCE
fitted
200
IC
100
Ic 90%
80
150
VCE
Ic
60%
60
100
IC90%
tr
Ic
40%
40
50
20
IC10%
Ic10%
0
0
tf
-20
-50
0,1
0,13
0,16
0,19
0,22
0,25
0,28
0,31
time (us)
2,95
2,99
3,03
3,07
3,11
3,15
3,19
time(us)
V C (100%) =
I C (100%) =
t f =
300
V
V C (100%) =
I C (100%) =
t r =
300
15
V
15
A
A
0,04
μs
0,03
μs
copyright Vincotech
26
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Switching Definitions PFC
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
%
200
Pon
%
Poff
Eoff
100
75
50
25
0
150
Eon
100
50
Uce 3%
Ic 1%
U ge90%
U ge10%
0
tEon
tEoff
0,16
-25
-50
-0,2
-0,08
0,04
0,28
0,4
0,52
2,8
2,9
3
3,1
3,2
3,3
3,4
time (us)
time(us)
P off (100%) =
E off (100%) =
4,52
0,23
0,33
kW
mJ
μs
P on (100%) =
E on (100%) =
4,5177
0,51
kW
mJ
μs
t E off
=
t E on
=
0,16
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Ud
0
IRRM10%
fitted
-50
IRRM90%
-100
IRRM100%
-150
2,9
2,98
3,06
3,14
3,22
3,3
3,38
time(us)
V d (100%) =
I d (100%) =
300
15
V
A
I RRM (100%) =
t rr
-15
0,13
A
=
μs
copyright Vincotech
27
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Switching Definitions PFC
figure 8.
FWD
figure 9.
Turn-on Switching Waveforms & definition of t Erec
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Qrr= integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
120
%
%
Erec
Id
Qrr
100
100
50
80
60
40
20
0
tErec
tQint
0
Prec
-50
-100
-20
2,9
3
3,1
3,2
3,3
3,4
2,9
3
3,1
3,2
3,3
3,4
time(us)
time(us)
I d (100%) =
Q rr (100%) =
15
A
P rec (100%) =
E rec (100%) =
4,52
kW
mJ
μs
1,11
0,26
μC
μs
0,16
0,26
t Qint
=
t E rec =
copyright Vincotech
28
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Ordering Code & Marking
Version
Ordering Code
with std lid (black V23990-K12-T-PM)
V23990-K203-B10-/0A/-PM
V23990-K203-B10-/1A/-PM
V23990-K203-B10-/0B/-PM
V23990-K203-B10-/1B/-PM
with std lid (black V23990-K12-T-PM) and P12
with thin lid (white V23990-K13-T-PM)
with thin lid (white V23990-K13-T-PM) and P12
VIN
Date code
Name&Ver
UL
Lot
Serial
Text
VIN
WWYY
Lot number
LLLLL
NNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Serial
Date code
Datamatrix
TTTTTTTVV
SSSS
WWYY
Outline
PCB pad table
Pad
X
Y
Function
1
2
3
4
5
6
15,93
15,93
-14,6
-9,8
G5
W
Not assembled
15,93
-0,2
7,62
12,62
15,8
+T
-T
15,93
15,93
15,93
PCB pad table
G6
Pad
X
Y
Function
7
-DC/W
20
21
22
23
24
25
26
27
28
29
-5,47
-7,17
-7,17
5,35
B
8
Not assembled
12,62
12,62
GB
-B
9
8,23
8,23
7,73
7,73
G4
-DC/V
G3
15,8
10
11
12
13
14
15
16
15,8
Not assembled
-14,6
-8,07
-9,8
+DC
-9,8
V
-15,02
-15,8
+RECT
Not assembled
Not assembled
12,62
Not assembled
-15,02
-15,02
-15,02
0
L2
L1
0,53
0,53
G2
9,8
15,8
15,8
-DC/U
-RECT
17
18
19
-0,47
-0,47
-5,47
-14,6
-9,8
-5
G1
U
Pad positions refers to center point.
For more informations on pad design
please see package data
+B
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1-T6
T7
IGBT
IGBT
600 V
15 A
30 A
10 A
30 A
25 A
Inverter Switch
PFC Switch
650 V
600 V
650 V
1600 V
D1-D6
D7
FWD
Inverter Diode
PFC Diode
FWD
D8, D9, D10, D12
PTC1
Rectifier
PTC
Rectifier Diode
Thermistor
copyright Vincotech
29
19 Jul. 2016 / Revision 4
V23990-K203-B10-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
198
Handling instructions for MiniSkiiP® 0 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-K203-B10-D4-14
19 Jul. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
30
19 Jul. 2016 / Revision 4
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