V23990-K219-F40-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-K219-F40-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总16页 (文件大小：2288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K219-F40-PM
datasheet
MiniSKiiP PACK 1
1200 V / 15 A
Features
MiniSkiip 1 housing
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
Schematic
Target applications
● Servo Drives
● Industrial Motor Drives
● UPS
Types
● V23990-K219-F40-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
25
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
VCE ≤ 1200 V, Tj ≤ Topmax
Tj = Tjmax
45
A
30
A
Ptot
VGES
tSC
Ts = 80 °C
88
W
V
±20
10
Short circuit ratings
VGE = 15 V
Vcc = 800 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
21
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
45
A
66
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
6,3
mm
mm
For more informations see handling in-
structions
With std lid
For more informations see handling in-
structions
6,3
CTI
Comparative Tracking Index
*100 % tested in production
> 200
Copyright Vincotech
2
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0005 25
5
5,8
6,5
V
V
25
1,6
2,1
2,15
15
0
15
150
2,39
1200
0
25
25
60
µA
nA
Ω
20
200
none
900
80
Cies
Coes
Cres
Qg
f = 1 Mhz
Output capacitance
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
55
±15
120
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,08
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
150
97
98
30
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
35
Rgon = 32 Ω
Rgoff = 32 Ω
ns
216
288
91
134
1
1,52
0,9
1,48
Turn-off delay time
Fall time
±15
600
15
Qr
Qr
= 1 μC
= 2,4 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
3
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,3
2,56
2,51
2,8
Forward voltage
VF
15
V
150
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,44
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
8,13
11,5
289
536
0,98
2,38
0,37
0,98
71
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
di/dt = 392 A/μs
di/dt = 390 A/μs
±15
600
15
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
54
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
A(25/50)
7,635*10-3
1,731*10-5
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
4
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
50
50
VGE
:
7
V
V
V
I
I
8
9
40
30
20
10
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
40
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
150 °C
tp
=
250
150
μs
°C
Tj:
VGE
=
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
15
I
12
Z
100
9
6
3
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
V
25 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
1,08
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,02E-02
7,53E-02
2,00E-01
5,79E-01
1,08E-01
7,24E-02
4,99E-03
8,05E+00
6,86E-01
1,22E-01
4,09E-02
7,96E-03
1,22E-03
5,90E-04
Copyright Vincotech
5
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
16
100
1ms
10µs
10ms
100µs
240 V
100ms
V
I
DC
14
960 V
12
10
8
10
1
6
4
0,1
2
0
0
0,01
1
20
40
60
80
100
QG (nC)
10
100
1000
10000
VC E (V)
D =
single pulse
80
IC
=
15
A
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
6
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
50
40
30
20
10
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
150 °C
D =
tp / T
1,44
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
6,32E-02
1,25E-01
4,72E-01
4,73E-01
2,06E-01
1,06E-01
2,64E+00
3,53E-01
5,08E-02
1,56E-02
2,93E-03
3,09E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical PTC characteristic
Thermistor
as a function of temperature
R = f(T)
PTC-typical temperature characteristic
2000
1500
1000
500
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
4
4
E
E
Eon
3
3
Eon
Eon
Eoff
Eon
2
1
0
2
1
0
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
0
40
80
120
160
Rg (Ω)
IC (A)
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
150 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
600
±15
32
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
600
±15
15
V
V
A
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1,2
1,5
E
E
Erec
1,2
0,9
Erec
0,9
0,6
0,3
0
0,6
0,3
0
Erec
Erec
0
40
80
120
160
0
5
10
15
20
25
30
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
150 °C
150 °C
R gon
Copyright Vincotech
8
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
1
1
td(off )
td(on)
t
t
td(off )
tf
tf
0,1
td(on)
0,1
tr
tr
0,01
0,01
0,001
0,001
0
40
80
120
160
0
5
10
15
20
25
30
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
600
±15
32
°C
V
Tj =
150
600
±15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
0,8
0,8
trr
trr
t
t
0,6
0,6
trr
trr
0,4
0,2
0
0,4
0,2
0
0
0
5
10
15
20
25
30
40
80
120
160
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
150 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
=
=
=
VCE
VGE
I C
=
=
=
150 °C
VGE
R gon
Copyright Vincotech
9
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
3,5
2,5
Qr
Qr
Q
Q
3
2
2,5
2
1,5
1
1,5
1
Qr
Qr
0,5
0,5
0
0
0
0
5
10
15
20
25
30
40
80
120
160
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
150 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
VGE
=
=
=
VCE=
VGE =
I C=
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
12
20
IRM
I
I
9
15
IRM
10
5
6
3
IRM
IRM
0
0
0
0
40
80
120
160
Rgo n (Ω)
5
10
15
20
25
30
IC (A)
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
150 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
V
A
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
10
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
1500
500
d
iF/dt
d
iF/
dt
t
t
i
dirr/dt
dir r
/
dt
i
400
1000
300
200
100
500
0
0
0
0
40
80
120
160
Rg on (Ω)
5
10
15
20
25 °C
25
30
IC (A)
With an inductive load at
With an inductive load at
25 °C
150 °C
Tj:
Tj:
600
±15
32
V
V
Ω
600
±15
15
V
VCE
VGE
=
=
=
VCE
VGE
I C
=
=
=
150 °C
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
35
IC MAX
I
30
I
25
20
15
10
5
I
V
0
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj
=
=
=
150
°C
Ω
32
32
R gon
R goff
Ω
Copyright Vincotech
11
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
32 Ω
32 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
15
V
600
15
V
A
A
288
ns
98
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
600
15
V
600
15
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
134
ns
tr
=
35
ns
Copyright Vincotech
12
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
15
V
I F (100%) =
Q r (100%) =
15
A
A
2,38
μC
11
A
t rr
=
536
ns
Copyright Vincotech
13
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
Ordering Code
V23990-K219-F40-/0A/-PM
V23990-K219-F40-/0B/-PM
V23990-K219-F40-/1A/-PM
V23990-K219-F40-/1B/-PM
V23990-K219-F40-/4A/-PM
V23990-K219-F40-/4B/-PM
V23990-K219-F40-/5A/-PM
V23990-K219-F40-/5B/-PM
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
VIN
LLLLL
SSSS
Type&Ver
NNNNNNNVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
PCB pad table
Pin
X
Y
Function
G5
15,93 -14,6
1
2
15,93
15,93
-9,8
-5
W
W
3
4
Not assembled
7,62 G6
5
15,93
6
15,93 12,62
+T
-T
7
15,93
15,8
8
Not assembled
9
8,23
8,23
7,73
12,62
15,8
-DC/W
10
-DC/W
G3
11
12
13
14
15
16
17
-14,6
Not assembled
Not assembled
0,53
0,53
0,53
9,45
12,62
15,8
G4
-DC/V
-DC/V
V
-0,47 -14,6
-0,47 -9,8
18
19
20
21
22
V
Not assembled
Not assembled
-7,17 12,62
-7,17 15,8
-8,07 -14,6
-8,07 -9,8
-DC/U
-DC/U
23
24
+DC
+DC
G1
U
25 -15,02 -15,8
26 -15,02 -9,8
27 -15,02
28
0
U
Not assembled
29 -15,02 15,8
G2
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
14
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T2, T1, T4, T3, T6,
T5
IGBT
1200 V
20 A
15 A
Inverter Switch
D1, D2, D3, D4, D5,
D6
FWD
PTC
1200 V
Inverter Diode
Thermistor
PTC1
Copyright Vincotech
15
01 Mar. 2019 / Revision 4
V23990-K219-F40-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 120
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 1 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-K219-F40-D4-14
01 Mar. 2019
Correction of Ic/If values
1,2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
01 Mar. 2019 / Revision 4
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