V23990-K243-A-0B-PM [VINCOTECH]
IGBT3 technology for low saturation losses;
| 型号： | V23990-K243-A-0B-PM |
| 厂家： | 
VINCOTECH |
| 描述： | IGBT3 technology for low saturation losses 双极性晶体管 |
| 文件： | 总17页 (文件大小：2287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K243-A-PM
MiniSKiiP® 3 PIM
600V/100A
MiniSkiip® 3 housing
Features
● IGBT3 technology for low saturation losses
● Solderless spring contact mounting system
Target Applications
Schematic
● Industrial motor drives
Types
● V23990-K243-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
V
A
A
Th=80°C
69
93
Tj=Tjmax
tp=10ms
Tj=Tjmax
Tc=80°C
IFSM
Surge forward current
700
Tj=25°C
I2t
A2s
W
I2t-value
2450
Th=80°C
Tc=80°C
77
Ptot
Power dissipation per Diode
Maximum Junction Temperature
117
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
600
V
A
Th=80°C
Tc=80°C
85
85
Tj=Tjmax
300
ICpulse
tp limited by Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
VCE ≤ 1200V, Tj ≤ Top max
300
A
Th=80°C
Tc=80°C
154
224
Ptot
Tj=Tjmax
W
V
VGE
±20
tSC
Tj≤150°C
6
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
Copyright by Vincotech
1
Revision: 3.1
V23990-K243-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
600
V
A
Th=80°C
Tc=80°C
75
75
Tj=Tjmax
985
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
Th=80°C
Tc=80°C
119
181
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
-40…+125
°C
°C
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
Copyright by Vincotech
2
Revision: 3.1
V23990-K243-A-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,02
0,94
0,88
0,75
4
1,35
VF
Vto
rt
35
35
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
6
0,1
2
Ir
1500
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
0,90
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,85
VGE(th) VCE=VGE
0,008
100
V
V
1,05
1,58
1,78
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,0052
1200
600
0
mA
nA
ꢀ
±25
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
187,2
187,2
31,5
32,8
222,5
241,8
53,3
86,9
2,29
2,92
2,43
3,08
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
300
100
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
6280
400
186
620
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
480
100
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,6
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,38
1,4
1,9
VF
IRRM
trr
100
100
V
A
92,8
112,9
167,5
247,7
5,85
10,5
3184
2578
1,1
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=8 ꢀ
300
µC
di(rec)max
/dt
A/µs
mWs
Erec
2,15
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,8
K/W
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
1670,313
ꢀ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
3
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
ꢁs
250
125
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
D1,D2,D3,D4,D5,D6,D7 FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
100
300
250
200
150
100
50
80
60
40
20
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
Tj = Tjmax-25°C
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
Copyright by Vincotech
4
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon High T
Eon Low T
8
8
Eon High T
6
6
Eoff High T
Eoff Low T
4
4
Eoff Low T
Eoff High T
2
2
Eon Low T
0
0
I C (A)
R G ( Ω )
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
±15
8
300
±15
100
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3,2
2,4
1,6
0,8
0
3,2
2,4
1,6
Erec
Tj = Tjmax -25°C
Erec
Tj = Tjmax -25°C
Erec
Tj = 25°C
Tj = 25°C
0,8
Erec
0
I C (A)
R G ( Ω )
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
300
±15
8
°C
V
25/125
300
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
ꢀ
100
Copyright by Vincotech
5
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tdon
tf
0,1
0,1
tr
tf
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
300
±15
8
°C
V
125
300
±15
100
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 11
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,5
0,4
0,3
0,2
0,5
trr
0,4
trr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,3
0,2
0,1
0,0
trr
trr
Tj = 25°C
0,1
Tj = 25°C
0,0
0
8
16
24
32
40
I C (A)
R g on ( Ω )
0
50
100
150
200
At
At
Tj =
Tj =
VCE
VGE
25/125
300
±15
8
°C
V
25/125
300
°C
V
A
V
=
VR =
=
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
Copyright by Vincotech
6
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
20
16
12
8
15
Qrr
12
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Qrr
9
6
3
0
Qrr
Tj = 25°C
Qrr
4
Tj = 25°C
0
I C (A)
R g on ( Ω)
0
50
100
150
200
0
8
16
24
32
40
At
At
Tj =
Tj =
VCE
VGE
25/125
300
±15
8
°C
V
25/125
300
°C
V
A
V
=
=
VR =
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
200
200
Tj = Tjmax - 25°C
150
100
150
Tj = Tjmax -25°C
100
Tj = 25°C
Tj = 25°C
IRRM
IRRM
IRRM
IRRM
50
50
0
0
I
C (A)
R gon ( Ω )
0
8
16
24
32
40
0
50
100
150
200
At
At
Tj =
Tj =
VCE
VGE
25/125
300
±15
8
°C
V
25/125
300
°C
V
A
V
=
VR =
=
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
Copyright by Vincotech
7
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
5000
7500
µ
µ
µ
µ
dI0/dt
dIrec/dtLow T
dIrec/dt
4000
3000
2000
1000
0
6000
4500
3000
1500
dIrec/dtHigh T
dIo/dtLow T
di0/dtHigh T
dI0/dt
dIrec/dt
0
0
I C (A)
R gon ( Ω )
0
50
100
150
200
8
16
24
32
At
At
Tj =
VCE
VGE
25/125
Tj =
25/125
300
°C
V
°C
V
A
V
=
=
VR =
300
±15
8
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
At
At
tp / T
0,62
tp / T
0,80
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,04
Tau (s)
6,5E+00
R (C/W)
0,08
Tau (s)
2,9E+00
0,09
1,0E+00
2,0E-01
5,9E-02
1,2E-02
2,2E-03
0,26
3,2E-01
8,4E-02
1,1E-02
7,9E-04
0,23
0,33
0,15
0,08
0,07
0,05
0,02
Copyright by Vincotech
8
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 21
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 22
T1,T2,T3,T4,T5,T6,T7 IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
300
250
200
150
100
50
100
80
60
40
20
0
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 24
Forward current as a
D1,D2,D3,D4,D5,D6,D7 FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
240
200
160
120
80
80
60
40
20
0
40
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
Copyright by Vincotech
9
Revision: 3.1
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
T1,T2,T3,T4,T5,T6,T7 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
18
)
103
10uS
1mS
100uS
10mS
100mS
DC
15
12
9
120V
102
101
100
480V
6
3
0
0
10-1
200
400
600
800
100
103
101
102
VCE (V)
Q g (nC)
At
D =
At
IC
=
100
A
single pulse
80
Th =
VGE
Tj =
ºC
=
±15
V
Tjmax
ºC
Copyright by Vincotech
10
Revision: 3.1
V23990-K243-A-PM
D8,D9,D10,D11,D12,D13
Figure 1
D8,D9,D10,D11,D12,D13 diode
Figure 2
D8,D9,D10,D11,D12,D13 diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
150
120
90
60
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
t p (s)
30
Tj = Tjmax-25°C
Tj = 25°C
0
0,0
0,3
0,6
0,9
1,2
1,5
VF (V)
10-5
10-4
10-3
10-2
10-1
100
101
At
At
tp =
tp / T
0,90
250
ꢁs
D =
RthJH
=
K/W
Figure 3
Power dissipation as a
D8,D9,D10,D11,D12,D13 diode
Figure 4
Forward current as a
D8,D9,D10,D11,D12,D13 diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
180
150
120
90
150
120
90
60
30
0
60
30
0
T h
(
o C)
T h (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
11
Revision: 3.1
V23990-K243-A-PM
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
25
50
75
100
125
T (°C)
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Revision: 3.1
V23990-K243-A-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
125 °C
8 Ω
Rgon
Rgoff
8 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
240
%
150
%
IC
200
160
tdoff
120
90
60
30
0
VCE
VGE 90%
VCE 90%
120
VCE
IC
80
tEoff
tdon
VGE
40
IC 1%
IC10%
VGE
VCE 3%
VGE10%
0
tEon
-30
-40
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
time (us)
2,45
2,6
2,75
2,9
3,05
3,2
3,35
time(us)
3,5
VGE (0%) =
V
GE (0%) =
-15
15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
V
15
V
300
99
V
300
99
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,24
0,50
ꢁs
ꢁs
0,19
0,41
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
120
fitted
%
240
%
VCE
IC
Ic
100
IC 90%
80
200
160
120
IC
60
40
20
0
60%
VCE
IC90%
IC 40%
80
tr
40
IC10%
IC10%
0
tf
-40
-20
2,9
2,95
3
3,05
3,1
3,15
3,2
3,25
time(us)
0,15
0,2
0,25
0,3
0,35
0,4
time (us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
300
99
V
300
99
V
A
A
0,09
ꢁs
0,03
ꢁs
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Revision: 3.1
V23990-K243-A-PM
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
150
%
%
Poff
Eoff
Pon
100
80
60
40
20
120
Eon
90
60
30
VGE 10%
VCE
3%
0
0
VGE 90%
IC 1%
tEon
tEoff
-30
-20
2,7
2,8
2,9
3
3,1
3,2
3,3
time(us)
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
time (us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
29,72
3,08
0,50
kW
29,72
2,92
0,41
kW
mJ
ꢁs
mJ
tEoff
=
tEon =
ꢁs
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
Vd
fitted
0
IRRM10%
-40
-80
IRRM90%
IRRM100%
-120
2,8
2,9
3
3,1
3,2
3,3
time(us)
Vd (100%) =
Id (100%) =
300
99
V
A
IRRM (100%) =
113
0,25
A
trr
=
ꢁs
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Revision: 3.1
V23990-K243-A-PM
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
%
Qrr
%
Erec
Id
100
100
80
tErec
50
tQrr
60
40
20
0
0
-50
Prec
-100
-150
-20
2,7
2,9
3,1
3,3
3,5
3,7
3,9
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
time(us)
Id (100%) =
P
rec (100%) =
99
A
29,72
2,15
0,30
kW
mJ
ꢁs
Qrr (100%) =
Erec (100%) =
tErec
10,50
0,30
ꢁC
ꢁs
tQrr
=
=
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Revision: 3.1
V23990-K243-A-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
K243A
in packaging barcode as
with std lid (black V23990-K32-T-PM)
V23990-K243-A-/0A/-PM
K243A-/0A/
K243A-/1A/
K243A-/0B/
K243A-/1B/
with std lid (black V23990-K32-T-PM) and P12 V23990-K243-A-/1A/-PM
with thin lid (white V23990-K33-T-PM) V23990-K243-A-/0B/-PM
with thin lid (white V23990-K33-T-PM) and P12 V23990-K243-A-/1B/-PM
K243A
K243A
K243A
Outline
Pinout
Copyright by Vincotech
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Revision: 3.1
V23990-K243-A-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
17
Revision: 3.1
相关型号：
V23990-K359-F40-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
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