V23990-K428-A60-0B-PM [VINCOTECH]
Mitsubishi Generation 6.1 technology;
| 型号： | V23990-K428-A60-0B-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Mitsubishi Generation 6.1 technology |
| 文件： | 总18页 (文件大小：2393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K428-A60-PM
MiniSKiiP® 3 PIM
1200V/50A
MiniSKiiP® 3 housing
Features
● Solderless interconnection
● Mitsubishi Generation 6.1 technology
Target Applications
Schematic
● Industrial Motor Drives
Types
● V23990-K428-A60-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
V
A
A
Th=80°C
71
80
Tj=Tjmax
tp=10ms
Tj=Tjmax
Tc=80°C
IFSM
Surge forward current
490
Tj=150°C
I2t
A2s
W
I2t-value
1200
Th=80°C
Tc=80°C
77
Ptot
Power dissipation per Diode
Maximum Junction Temperature
117
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
1200
V
A
Th=80°C
Tc=80°C
55
70
Tj=Tjmax
ICpulse
tp limited by Tjmax
Pulsed collector current
100
100
A
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
VCE ≤ 1200V, Tj ≤ Top max
A
Th=80°C
Tc=80°C
127
193
Ptot
Tj=Tjmax
W
V
VGE
20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
850
Tjmax
Maximum Junction Temperature
175
°C
Copyright by Vincotech
1
Revision: 1.1
V23990-K428-A60-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
V
A
Th=80°C
Tc=80°C
47
55
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
100
A
Th=80°C
Tc=80°C
102
154
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
Copyright by Vincotech
2
Revision: 1.1
V23990-K428-A60-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=°C
1
1,09
1,02
0,90
0,74
4,00
6,00
1,8
VF
Vto
rt
50
50
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
Tj=25°C
Tj=145°C
Ir
1600
1,1
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
0,90
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
1
6
6,6
2,3
VGE(th) VCE=VGE
0,005
50
V
V
1,79
2,12
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,25
500
1200
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
104
28
Rise time
31
ns
157
205
58
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
600
50
Fall time
89
2,61
4,39
2,49
4,09
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
5000
1000
80
Output capacitance
f=1MHz
0
10
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
600
50
117
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,75
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
2,73
2,18
33
3,4
VF
IRRM
trr
50
50
V
A
Peak reverse recovery current
Reverse recovery time
45
388
727
4,01
10,81
1018
295
1,84
5,14
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,93
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
1670
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
ꢀ
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
B(25/50)
B(25/100)
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
3
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
120
120
100
80
100
80
60
60
40
40
20
20
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
tp =
tp =
250
25
ꢁs
250
151
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
D1,D2,D3,D4,D5,D6,D7 FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
50
100
80
60
40
20
0
40
30
20
10
0
0
2
4
6
8
10
12
0
1
2
3
4
5
VGE (V)
VF (V)
At
At
Tj =
tp =
Tj =
tp =
°C
°C
25/150
250
25/150
250
ꢁs
ꢁs
VCE
=
10
V
Copyright by Vincotech
4
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
12
12
10
8
Eon High T
Eon High T
9
Eon Low T
Eon Low T
6
6
Eoff High T
Eoff Low T
Eoff High T
4
3
Eoff Low T
2
0
0
0
16
32
48
64
80
0
25
50
75
I C (A)
100
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
16
600
±15
50
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
16
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
8
6
4
2
0
8
6
4
2
0
Erec
Erec
Erec
Erec
0
25
50
75
100
0
16
32
48
64
80
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
°C
V
25/150
°C
V
V
A
=
=
=
=
600
±15
16
600
±15
50
V
Rgon
=
ꢀ
Copyright by Vincotech
5
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
0,10
0,01
0,00
1,00
tdoff
tdoff
tdon
tf
0,10
tf
tr
tdon
0,01
tr
0,00
0
16
32
48
64
80
0
25
50
75
100
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
151
600
±15
16
°C
V
151
600
±15
50
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
16
Figure 11
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
1,5
1,2
0,9
0,6
0,3
0,0
1,5
1,2
0,9
0,6
0,3
trr
trr
trr
trr
0,0
0
0
25
50
75
100
16
32
48
64
80
I C (A)
R gon ( Ω )
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
°C
V
25/150
600
50
°C
V
A
V
=
600
±15
16
=
V
Rgon
=
VGE =
ꢀ
±15
Copyright by Vincotech
6
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
18
15
12
9
15
Qrr
12
9
Qrr
6
6
Qrr
Qrr
3
3
0
0
0
0
25
50
75
100
16
32
48
64
80
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
°C
V
25/150
600
50
°C
V
A
V
=
=
600
±15
16
V
Rgon
=
VGE =
ꢀ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
125
100
75
50
25
0
125
100
75
50
IRRM
IRRM
25
IRRM
IRRM
0
0
16
32
48
64
80
0
25
50
75
100
I C (A)
R gon ( Ω )
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
°C
V
25/150
600
50
°C
V
A
V
=
=
600
±15
16
V
Rgon
=
VGE =
ꢀ
±15
Copyright by Vincotech
7
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
10000
10000
µ
µ
µ
dI0/dt
µ
dI0/dt
dIrec/dt
dIrec/dt
8000
6000
4000
2000
0
8000
6000
4000
2000
0
0
10
20
30
40
50
60
70
)
0
20
40
60
80
100
I C (A)
R gon
(
Ω
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
°C
V
25/150
600
50
°C
V
A
V
=
600
±15
16
=
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1010
1
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
tp / T
0,75
tp / T
0,93
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,03
Tau (s)
1,6E+01
R (C/W)
0,05
Tau (s)
3,4E+00
0,09
1,2E+00
2,1E-01
7,1E-02
1,5E-02
0,10
5,9E-01
1,2E-01
3,7E-02
8,1E-03
9,0E-04
0,29
0,37
0,24
0,25
0,09
0,13
0,04
Copyright by Vincotech
8
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 21
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 22
T1,T2,T3,T4,T5,T6,T7 IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
250
200
150
100
50
80
60
40
20
0
0
0
50
100
150
T h
(
o C)
200
T h (
o C)
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 24
Forward current as a
D1,D2,D3,D4,D5,D6,D7 FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
200
150
100
50
60
45
30
15
0
0
0
50
100
150
T h
(
o C)
200
T h (
o C)
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
Copyright by Vincotech
9
Revision: 1.1
V23990-K428-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
T1,T2,T3,T4,T5,T6,T7 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
20
)
103
18
16
14
12
10
8
102
101
100
10-1
100uS
240V
960V
1mS
10mS
6
100mS
DC
4
2
0
0
20
40
60
80
100
120
140
160
Q g (nC)
101
102
103
VCE (V)
100
At
At
IC
=
D =
Th =
50
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
Figure 27
Short circuit safe operating area (SCSOA)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 28
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
Ic = f(VCE
)
x
x
11
7
6
5
x
10
x
9
x
x8
x
7
6
5
4
x
4
x
x
x
3
2
x
x
x
x3
x 2
x 1
x
x
1
0
x
0
0
200
400
600
800
1000
1200
V
1400
GE (V)
13
14
15
16
17
VGE (V)
V
At
VCE
≤
VGE
tSC
=
VCE
Tj=
=
850
150
V
±15
10
800
150
V
Tj ≤
≤
ºC
ꢁS
ºC
Copyright by Vincotech
10
Revision: 1.1
V23990-K428-A60-PM
Figure 28
T1,T2,T3,T4,T5,T6,T7 IGBT
Reverse bias safe operating area
IC = f(VCE
120
)
IC MAX
100
80
60
40
20
0
0
200
400
ºC
600
800
1000
1200 1400
VCE (V)
At
Tj =
Tjmax-25
Uccminus=Uccplus
Switching mode :
3phase SPWM
Copyright by Vincotech
11
Revision: 1.1
V23990-K428-A60-PM
D8,D9,D10,D11,D12,D13
Figure 1
D8,D9,D10,D11,D12,D13 diode
Figure 2
D8,D9,D10,D11,D12,D13 diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
150
120
90
60
30
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0,0
0,5
1,0
1,5
2,0
t p (s)
VF (V)
10-5
10-4
10-3
10-2
10-1
100
1010
1
At
At
Tj =
tp =
tp / T
0,90
°C
D =
25/125
250
RthJH
=
ꢁs
K/W
Figure 3
Power dissipation as a
D8,D9,D10,D11,D12,D13 diode
Figure 4
Forward current as a
D8,D9,D10,D11,D12,D13 diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
180
150
120
90
100
80
60
40
20
0
60
30
0
o C)
T h (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
T h
(
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
12
Revision: 1.1
V23990-K428-A60-PM
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
25
45
65
85
105
125
T (°C)
Copyright by Vincotech
13
Revision: 1.1
V23990-K428-A60-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
16 Ω
Rgon
Rgoff
16 Ω
Figure 1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
T1,T2,T3,T4,T5,T6,T7 IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
200
125
tdoff
%
%
VCE
IC
100
150
VCE 90%
VGE 90%
75
50
25
0
VCE
IC
100
VGE
tdon
tEoff
50
VCE 3%
IC 1%
VGE 10%
IC 10%
VGE
0
tEon
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
2,7
2,9
3,1
3,3
3,5
3,7
time(us)
time (us)
VGE (0%) =
V
GE (0%) =
-15
V
V
V
A
-15
V
V
V
A
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
15
600
50
600
50
tdoff
tEoff
=
=
tdon
tEon
=
=
0,205
0,715
ꢁs
ꢁs
0,104
0,366
ꢁs
ꢁs
Figure 3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
T1,T2,T3,T4,T5,T6,T7 IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
120
fitted
%
200
VCE
%
Ic
IC
100
150
100
50
IC 90%
80
VCE
60
IC
IC 90%
60%
tr
40
IC 40%
20
IC 10%
IC 10%
0
0
tf
-20
-50
-0,05
0,05
0,15
0,25
0,35
0,45
time (us)
2,9
3
3,1
3,2
3,3
3,4
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
50
V
600
50
V
A
A
0,09
ꢁs
0,03
ꢁs
Copyright by Vincotech
14
Revision: 1.1
V23990-K428-A60-PM
Switching Definitions Output Inverter
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
200
%
%
Eoff
Pon
Poff
100
80
160
120
80
Eon
60
40
40
20
VGE 90%
VGE 10%
VCE
3%
IC
1%
0
0
tEoff
tEon
-40
-20
2,9
3
3,1
3,2
3,3
3,4
3,5
-0,3
-0,1
0,1
0,3
0,5
0,7
0,9
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
30,14
4,09
0,72
kW
mJ
ꢁs
30,14
4,39
0,37
kW
mJ
ꢁs
tEoff
=
tEon =
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Turn-off Switching Waveforms & definition of trr
120
Id
%
80
trr
40
Vd
0
IRRM10%
-40
fitted
IRRM 90%
IRRM 100%
-80
-120
2,9
3,1
3,3
3,5
3,7
3,9
4,1
time(us)
4,3
Vd (100%) =
Id (100%) =
600
50
V
A
IRRM (100%) =
-45
0,73
A
trr
=
ꢁs
Copyright by Vincotech
15
Revision: 1.1
V23990-K428-A60-PM
Switching Definitions Output Inverter
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 9
D1,D2,D3,D4,D5,D6,D7 FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
%
120
%
Erec
Id
Qrr
100
80
60
40
20
0
100
tQrr
tErec
50
0
-50
Prec
-100
-150
-20
2,8
3,1
3,4
3,7
4,0
4,3
4,6
4,9
5,2 5,5
time(us)
2,8
3,1
3,4
3,7
4
4,3
4,6
4,9
5,2
time(us)
5,5
Id (100%) =
P
rec (100%) =
Erec (100%) =
tErec
50
A
30,14
5,14
2,00
kW
mJ
ꢁs
Qrr (100%) =
tQrr
10,81
2,00
ꢁC
ꢁs
=
=
Copyright by Vincotech
16
Revision: 1.1
V23990-K428-A60-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K32-T-PM)
V23990-K428-A60-/0A/-PM
V23990-K428-A60-/1A/-PM
V23990-K428-A60-/0B/-PM
V23990-K428-A60-/1B/-PM
K428A60
K428A60
K428A60
K428A60
K428A60-/0A/
K428A60-/1A/
K428A60-/0B/
K428A60-/1B/
with std lid (black V23990-K32-T-PM) and P12
with thin lid (white V23990-K33-T-PM)
with thin lid (white V23990-K33-T-PM) and P12
Outline
Pinout
Copyright by Vincotech
17
Revision: 1.1
V23990-K428-A60-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
18
Revision: 1.1
相关型号：
V23990-K428-A60-1A-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K428-A60-1B-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K428-A60-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A40-0A-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A40-0B-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A40-1A-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A40-1B-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A40-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A60-0A-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A60-0B-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A60-1A-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
V23990-K429-A60-1B-PM
Mitsubishi Generation 6.1 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VINCOTECH
©2020 ICPDF网 联系我们和版权申明