V23990-K430-F40-PM [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
V23990-K430-F40-PM
型号: V23990-K430-F40-PM
厂家: VINCOTECH    VINCOTECH
描述:

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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中文:  中文翻译
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V23990-K430-F40-PM  
datasheet  
MiniSKiiP® PACK 3  
1200 V / 150 A  
Features  
MiniSKiiP® 3 16 mm housing  
● Solderless interconnection  
● Trench Fieldstop IGBT4 technology  
Schematic  
Target applications  
● Servo Drives  
● Industrial Motor Drives  
● UPS  
Types  
V23990-K430-F40-PM  
Copyright Vincotech  
1
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VCES  
Collector-emitter voltage  
1200  
158  
450  
427  
±20  
10  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Inverter Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
115  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
900  
A
Single Half Sine Wave,  
tp = 10 ms  
4050  
252  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Visol  
Visol  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
V
V
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
Creepage distance  
Clearance  
For more informations see handling  
instructions  
With std lid  
For more informations see handling  
instructions  
6,3  
mm  
mm  
6,3  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
2
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,0052  
150  
25  
5,3  
5,8  
6,3  
V
25  
1,58  
2,04  
2,5  
2,07(1)  
15  
0
V
150  
1200  
0
25  
25  
2
µA  
nA  
Ω
20  
240  
5
Cies  
Cres  
Qg  
8600  
320  
pF  
pF  
nC  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
0
1140  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,22  
K/W  
25  
175  
td(on)  
Turn-on delay time  
Rise time  
ns  
ns  
150  
25  
192,6  
46,2  
tr  
150  
25  
52,8  
Rgon = 2 Ω  
Rgoff = 2 Ω  
288,4  
375,4  
58,36  
99,6  
td(off)  
Turn-off delay time  
Fall time  
ns  
150  
25  
±15  
600  
150  
tf  
ns  
150  
25  
QrFWD=7,99 µC  
QrFWD=24,28 µC  
14,99  
23,03  
8,26  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
mWs  
150  
25  
150  
14,15  
Copyright Vincotech  
3
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Diode  
Static  
25  
2,51  
2,54  
2,46(1)  
2,38(1)  
180  
VF  
IR  
Forward voltage  
150  
V
150  
25  
Reverse leakage current  
Vr = 1200 V  
µA  
150  
14000  
28000  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,38  
K/W  
25  
76,98  
106,92  
124,75  
491,64  
7,99  
IRRM  
Peak recovery current  
Reverse recovery time  
Recovered charge  
A
150  
25  
trr  
ns  
150  
25  
di/dt=2520 A/µs  
di/dt=2365 A/µs  
Qr  
±15  
600  
150  
μC  
150  
25  
24,28  
2,13  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
150  
25  
8,21  
990  
(dirf/dt)max  
150  
1268  
Copyright Vincotech  
4
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
Imax  
d
Rated resistance  
Deviation of R100  
Maximum Current  
Power dissipation constant  
A-value  
25  
1
kΩ  
%
R100 = 1670 Ω  
100  
-2  
2
3
mA  
25  
0,76  
mW/K  
1/K  
7,635x10-3  
1,73x10-5  
A
B-value  
1/K2  
B
Vincotech Thermistor Reference  
E
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
5
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
400  
400  
VGE  
:
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
300  
200  
100  
0
300  
200  
100  
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
150 °C  
Tj:  
VGE  
Tj =  
VGE from 8 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
150  
10  
125  
100  
75  
50  
25  
0
-1  
10  
-2  
10  
-3  
10  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
10  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
10  
μs  
V
D =  
tp / T  
0,222  
25 °C  
150 °C  
Tj:  
VCE  
=
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
1,55E-02  
4,93E-02  
9,20E-02  
5,29E-02  
1,25E-02  
4,81E+00  
1,04E+00  
1,47E-01  
3,54E-02  
2,68E-03  
Copyright Vincotech  
6
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100µs  
100  
10  
1ms  
10ms  
1
100ms  
DC  
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
7
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-4  
10  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
6
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,377  
25 °C  
150 °C  
Tj:  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
2,99E-02  
6,92E-02  
1,77E-01  
7,45E-02  
2,66E-02  
3,14E+00  
5,61E-01  
9,53E-02  
2,61E-02  
2,31E-03  
Copyright Vincotech  
8
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Thermistor Characteristics  
figure 8.  
Thermistor  
Typical PTC characteristic as function of temperature  
RT = f(T)  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
9
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switching Characteristics  
figure 9.  
IGBT  
figure 10.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
70  
60  
50  
40  
30  
20  
10  
0
35  
30  
25  
20  
15  
10  
5
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
150 °C  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
Ω
600  
±15  
150  
V
V
A
VGE  
Rgon  
Rgoff  
2
figure 11.  
FWD  
figure 12.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
10  
10  
Erec  
Erec  
8
8
6
6
4
4
Erec  
Erec  
2
2
0
0
0
50  
100  
150  
200  
250  
300  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
150 °C  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
600  
±15  
150  
V
V
A
Copyright Vincotech  
10  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switching Characteristics  
figure 13.  
IGBT  
figure 14.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(off)  
td(on)  
td(on)  
tf  
-1  
10  
-1  
10  
tf  
tr  
tr  
-2  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
±15  
2
°C  
V
150  
600  
±15  
150  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
V
Ω
Ω
A
2
figure 15.  
FWD  
figure 16.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
150 °C  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
600  
±15  
150  
V
V
A
Copyright Vincotech  
11  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switching Characteristics  
figure 17.  
FWD  
figure 18.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
35  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
Qr  
Qr  
Qr  
Qr  
0
0
0
50  
100  
150  
200  
250  
300  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
150 °C  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
600  
±15  
150  
V
V
A
figure 19.  
FWD  
figure 20.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
125  
100  
75  
50  
25  
0
150  
125  
100  
75  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
50  
100  
150  
200  
250  
300  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
150 °C  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
600  
±15  
150  
V
V
A
Copyright Vincotech  
12  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switching Characteristics  
figure 21.  
FWD  
figure 22.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
3500  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
3000  
2500  
2000  
1500  
1000  
500  
0
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
1
2
3
4
5
6
7
8
R
9
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
150 °C  
25 °C  
150 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
600  
±15  
150  
V
V
A
figure 23.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
350  
IC MAX  
300  
250  
200  
150  
100  
50  
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
2
2
Ω
Copyright Vincotech  
13  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switching Definitions  
figure 24.  
IGBT  
figure 25.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 26.  
IGBT  
figure 27.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
14  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Inverter Switching Definitions  
figure 28.  
FWD  
figure 29.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
15  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Ordering Code  
Version  
Ordering Code  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
V23990-K430-F40-/0A/-PM  
V23990-K430-F40-/0B/-PM  
V23990-K430-F40-/1A/-PM  
V23990-K430-F40-/1B/-PM  
V23990-K430-F40-/4A/-PM  
V23990-K430-F40-/4B/-PM  
V23990-K430-F40-/5A/-PM  
V23990-K430-F40-/5B/-PM  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Marking  
VIN  
VIN  
Type&Ver  
Date code  
WWYY  
Lot number  
Type&Ver  
TTTTTTTVV  
Serial  
UL  
UL  
Date code  
Lot  
Serial  
Text  
LLLLL  
SSSS  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
2
3
4
5
6
7
8
X
Y
Function  
G5  
E5  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
not assembled  
not assembled  
not assembled  
not assembled  
not assembled  
22,1  
25,3  
-25,3  
not assembled  
-15,7  
-12,5  
-9,3  
-6,1  
not assembled  
18,9  
22,1  
25,3  
-25,3  
not assembled  
-15,7  
15,83  
15,83  
-25,3  
-6,4  
not assembled  
not assembled  
not assembled  
6,4  
-35,68  
-35,68  
-36,58  
-DC  
-DC  
+DC  
15,83  
15,83  
-T  
+T  
15,7  
not assembled  
not assembled  
not assembled  
not assembled  
not assembled  
not assembled  
25,3  
-15,38  
-12,18  
-8,98  
-5,79  
not assembled  
not assembled  
not assembled  
-15,38  
-12,18  
-8,98  
-5,79  
not assembled  
22,1  
25,3  
not assembled  
not assembled  
9
-36,58  
-36,58  
-36,58  
-36,58  
U
U
U
U
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
8,13  
1,82  
1,82  
1,82  
1,82  
G6  
W
W
W
W
-39,32  
-39,32  
-39,32  
-40,22  
E2  
-DC  
-DC  
+DC  
-40,22  
-40,22  
-40,22  
-40,22  
-50,18  
-50,18  
-50,18  
U
U
U
-12,5  
-9,3  
-6,09  
-25,3  
-22,1  
-18,9  
-1,82  
-1,82  
-1,82  
-1,82  
W
W
W
W
U
+DC  
+DC  
+DC  
not assembled  
not assembled  
not assembled  
not assembled  
not assembled  
22,1  
-7,27  
-7,27  
E6  
G4  
-16,05 -15,02  
-16,05 -11,82  
-16,05  
-16,05  
V
V
V
V
-50,18  
-50,18  
-53,82  
-53,82  
-53,82  
-DC  
-DC  
+DC  
+DC  
+DC  
25,3  
-25,3  
-22,1  
-18,9  
-8,63  
-5,42  
not assembled  
-15,02  
-11,82  
-8,62  
-19,7  
-19,7  
-19,7  
V
V
V
not assembled  
not assembled  
not assembled  
3,1  
-19,7  
-5,42  
-1  
2,2  
22,1  
V
-53,82  
-53,82  
G1  
E1  
-22,26  
-22,26  
-22,67  
-22,67  
G3  
E3  
E4  
G2  
6,3  
not assembled  
22,1  
-53,82  
-53,82  
-DC  
-DC  
25,3  
not assembled  
25,3  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
16  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Pinout  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T2, T1, T4, T3, T6, T5  
D1, D2, D3, D4, D5,  
D6  
IGBT  
1200 V  
150 A  
Inverter Switch  
FWD  
PTC  
1200 V  
150 A  
Inverter Diode  
Thermistor  
PTC1  
Copyright Vincotech  
17  
30 Oct. 2020 / Revision 7  
V23990-K430-F40-PM  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 48  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.  
Package data  
Package data for MiniSKiiP® 3 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Update datasheet format  
Correct R-tau values of Inverter Switch and Diode  
Correct Typical forward characteristics of Inverter Diode  
V23990-K430-F40-D5-14  
15 Sep. 2020  
V23990-K430-F40-D6-14  
29 Sep. 2020  
30 Oct. 2020  
Correct legend of Fig.2  
V23990-K430-F40-D7-14  
Thermal values correction  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
18  
30 Oct. 2020 / Revision 7  

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