V23990-P544-C28-PM [VINCOTECH]
Industrial drives Embedded drives;
| 型号： | V23990-P544-C28-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Industrial drives Embedded drives |
| 文件： | 总23页 (文件大小：920K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P544-*2*-PM
flowPIM 0
600V/15A
Features
flowPIM 0 housing
● Vincotech clip-in housing
● Trench Fieldstop IGBT's for low saturation losses
● Optional w/o BRC
Target Applications
● Industrial drives
12mm housing
17mm housing
● Embedded drives
Schematic
Types
● V23990-P544-A28-PM
● V23990-P544-A29-PM
● V23990-P544-C28-PM
● V23990-P544-C29-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
V
A
A
Th=80°C
28
37
Tj=Tjmax
tp=10ms
Tc=80°C
IFSM
Surge forward current
200
200
Tj=25°C
50 Hz half sine wave
I2t
A2s
W
I2t-value
Th=80°C
Tc=80°C
33
50
Ptot
Tj=Tjmax
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
Inverter Transistor
VCE
IC
Collector-emitter break down voltage
DC collector current
600
V
A
Th=80°C
Tc=80°C
20
25
Tj=Tjmax
ICpulse
tp limited by Tjmax
VCE ≤ 1200V, Tj ≤ Top max
Tj=Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
45
45
A
A
Th=80°C
Tc=80°C
45
69
Ptot
W
V
VGE
±20
tSC
Tj≤150°C
6
µs
VCC
VGE=15V
360
V
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 4
V23990-P544-*2*-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
600
V
A
Th=80°C
Tc=80°C
18
23
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
30
A
Th=80°C
Tc=80°C
35
52
W
°C
Tjmax
175
Brake Transistor
VCE
IC
Collector-emitter break down voltage
DC collector current
600
V
A
Th=80°C
Tc=80°C
14
18
Tj=Tjmax
ICpuls
tp limited by Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
30
30
A
VCE ≤ 1200V, Tj ≤ Top max
A
Th=80°C
Tc=80°C
36
55
Ptot
Tj=Tjmax
W
V
VGE
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
Brake Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
600
V
A
Th=80°C
Tc=80°C
14
19
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
20
A
Th=80°C
Tc=80°C
27
41
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
2
Revision: 4
V23990-P544-*2*-PM
Characteristic Values
Conditions
Value
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Typ
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=145°C
0,8
1,26
1,24
0,92
0,82
11
1,45
VF
Vto
rt
Forward voltage
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
14
Ir
1500
1,1
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50µm
λ = 1 W/mK
2,10
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,9
VGE(th) VCE=VGE
0,00021
15
V
V
1,1
1,61
1,81
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,00085
300
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
14
13
11
Rise time
13
ns
127
146
86
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=16 ꢀ
±15
300
15
Fall time
86
0,19
0,26
0,31
0,39
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
860
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
55
Reverse transfer capacitance
Gate charge
24
±15
480
15
87
nC
Thermal grease
thickness≤50µm
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,10
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,25
1,79
1,67
15
1,95
VF
IRRM
trr
Diode forward voltage
15
15
V
A
Peak reverse recovery current
Reverse recovery time
17
100
184
0,52
1,01
1448
773
0,10
0,21
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 ꢀ
±15
300
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50µm
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,75
K/W
copyright Vincotech
3
Revision: 4
V23990-P544-*2*-PM
Characteristic Values
Conditions
Value
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Typ
Max
VGS [V]
VDS [V]
Brake Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,9
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00015
10
V
V
1,1
1,66
1,87
15
0,0006
300
0
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
15
15
11
Rise time
14
ns
147
163
101
97
0,16
0,22
0,23
0,27
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=32 ꢀ
±15
300
10
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
551
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
40
Reverse transfer capacitance
Gate charge
17
±15
480
10
62
nC
Thermal grease
thickness≤50µm
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,61
K/W
Brake Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,25
1,67
1,61
1,95
27
VF
Ir
Diode forward voltage
10
10
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Rgon=32 ꢀ
600
300
10
10
IRRM
trr
A
149
208
0,46
0,46
620
340
0,09
0,16
ns
Rgon=32 ꢀ
Rgon=32 ꢀ
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
A/µs
mWs
di(rec)max
/dt
Erec
Thermal grease
thickness≤50µm
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,53
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
∆R/R R100=1486 ꢀ
-5
5
P
210
3,5
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
B(25/100)
B-value
4000
K
Vincotech NTC Reference
A
copyright Vincotech
4
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
50
60
50
40
30
20
10
40
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
tp =
tp =
250
25
ꢁs
250
125
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Output inverter IGBT
Figure 4
Output inverter FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
18
60
50
40
30
20
15
12
9
Tj = Tjmax-25°C
6
Tj = Tjmax-25°C
10
3
Tj = 25°C
Tj = 25°C
0
0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
5
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
Eoff High T
Eon High T
Eon High T
Eoff Low T
Eon Low T
Eon Low T
Eoff High T
0,4
Eoff Low T
0,2
0,0
0
5
10
15
20
25
30
0
30
60
90
120
150
I
C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
15
16
8
V
V
ꢀ
ꢀ
300
15
Rgon
Rgoff
=
=
15
Figure 7
Output inverter FWD
Figure 8
Output inverter FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,4
0,4
0,3
0,3
Erec
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,2
0,2
Erec
Erec
Tj = 25°C
0,1
0,1
Tj = 25°C
Erec
0,0
0,0
0
30
60
90
120
150
0
5
10
15
20
25
30
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
25/125
300
15
Tj =
°C
°C
V
V
A
25/125
=
=
VCE
VGE
IC =
=
=
V
V
ꢀ
300
15
Rgon
=
16
15
copyright Vincotech
6
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 9
Output inverter IGBT
Figure 10
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
1,00
tdoff
tdoff
0,10
0,10
tf
tf
tdon
tr
tdon
0,01
0,01
tr
0,00
0,00
0
20
40
60
80
100
120
140
Ω )
0
5
10
15
20
25
30
I
C (A)
R G
(
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
300
15
°C
125
300
15
°C
V
V
A
=
=
=
=
V
V
ꢀ
ꢀ
Rgon
Rgoff
=
=
16
15
8
Figure 11
Output inverter FWD
Figure 12
Output inverter FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,4
0,3
0,2
0,1
0,0
0,4
trr
0,3
Tj = Tjmax -25°C
trr
Tj = Tjmax -25°C
0,2
0,1
0,0
trr
Tj = 25°C
Tj = 25°C
trr
0
30
60
90
120
150
0
5
10
15
20
25
30
I C (A)
R g on ( Ω )
At
At
Tj =
Tj =
VCE
VGE
°C
°C
V
A
V
25/125
300
15
25/125
300
15
=
VR =
V
V
ꢀ
=
IF =
VGE
Rgon
=
=
16
15
copyright Vincotech
7
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 13
Output inverter FWD
Figure 14
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
1,5
1,2
0,9
0,6
0,3
0,0
1,5
Tj = Tjmax -25°C
Qrr
1,2
0,9
0,6
0,3
Tj = Tjmax -25°C
Qrr
Qrr
Tj = 25°C
Tj = 25°C
Qrr
0,0
0
30
60
90
120
150
0
5
10
15
20
25
30
I
C (A)
R g on ( Ω)
At
At
Tj =
VCE
VGE
Tj =
°C
°C
V
A
V
25/125
300
15
25/125
300
15
=
=
VR =
V
V
ꢀ
IF =
Rgon
=
VGE =
16
15
Figure 15
Output inverter FWD
Figure 16
Output inverter FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
18
15
12
9
25
Tj = Tjmax -25°C
IRRM
IRRM
20
15
10
5
Tj = 25°C
IRRM
IRRM
Tj = Tjmax - 25°C
Tj = 25°C
6
3
0
0
0
30
60
90
120
150
0
5
10
15
20
25
30
I C (A)
R gon ( Ω )
At
At
Tj =
Tj =
VCE
VGE
°C
°C
25/125
300
15
25/125
300
15
=
=
VR =
V
V
ꢀ
V
A
V
IF =
VGE
Rgon
=
=
16
15
copyright Vincotech
8
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 17
Output inverter FWD
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
2000
2000
dI0/dt
µ
µ
µ
µ
dIrec/dt
dI0/dt
dIrec/dt
1600
1200
800
400
0
1600
1200
800
400
0
0
30
60
90
120
150
0
5
10
15
20
25
30
I
C (A)
R gon ( Ω )
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
300
15
25/125
300
15
=
=
VR =
IF =
VGE
V
Rgon
=
=
16
ꢀ
15
Figure 19
Output inverter IGBT
Figure 20
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
10110
10-4
10-3
10-2
10-1
100
10110
t p (s)
t p (s)
At
At
tp / T
2,10
tp / T
2,75
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
Phase change interface
FWD thermal model values
Thermal grease Phase change interface
Thermal grease
R (C/W)
0,07
Tau (s)
R (C/W)
0,06
Tau (s)
2,8E+00
3,0E-01
6,2E-02
1,1E-02
2,1E-03
2,4E-04
R (C/W)
0,05
Tau (s)
R (C/W)
0,04
Tau (s)
6,6E+00
6,0E-01
8,7E-02
2,5E-02
4,4E-03
6,9E-04
3,4E+00
3,7E-01
7,6E-02
1,4E-02
2,5E-03
3,0E-04
8,2E+00
7,4E-01
1,1E-01
3,1E-02
5,4E-03
8,5E-04
0,25
0,20
0,17
0,14
0,98
0,79
0,78
0,64
0,42
0,34
0,74
0,60
0,19
0,16
0,48
0,39
0,19
0,15
0,24
0,19
copyright Vincotech
9
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 21
Output inverter IGBT
Figure 22
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
100
80
60
40
20
0
30
25
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
Output inverter FWD
Figure 24
Forward current as a
Output inverter FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
10
Revision: 4
V23990-P544-*2*-PM
Output Inverter
Figure 25
Output inverter IGBT
Figure 26
Output inverter IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
18
)
103
16
14
12
10
8
102
120V
480V
10uS
100uS
1mS
101
DC
100mS
10mS
100
6
4
10-1
2
0
0
20
40
60
80
100
120
g (nC)
100
102
101
VCE (V)
103
Q
At
At
IC
=
D =
Th =
15
A
single pulse
80
ºC
V
VGE
Tj =
=
15
Tjmax
ºC
Figure 27
Output inverter IGBT
Figure 28
Output inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
tsc = f(VGE
)
VGE = f(QGE
)
14
250
12
10
8
200
150
100
50
6
4
2
0
0
10
11
12
13
14
15
12
14
16
18
20
VGE (V)
VGE (V)
At
At
VCE
=
VCE
Tj =
≤
600
175
V
600
175
V
Tj ≤
ºC
ºC
copyright Vincotech
11
Revision: 4
V23990-P544-*2*-PM
Figure 29
IGBT
Reverse bias safe operating area
IC = f(VCE
50
)
40
30
20
10
IC MAX
0
0
100
200
300
400
500
600
700
VCE (V)
At
Tj =
Tjmax-25
ºC
3 level switching
Uccminus=Uccplus
Switching mode :
copyright Vincotech
12
Revision: 4
V23990-P544-*2*-PM
Brake
Figure 1
Brake IGBT
Figure 2
Typical output characteristics
Brake IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
35
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
ꢁs
250
125
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Brake IGBT
Figure 4
Brake FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
12
40
30
20
10
10
8
6
4
2
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
0
1
2
3
4
3
6
9
12
VGE (V)
VF (V)
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
13
Revision: 4
V23990-P544-*2*-PM
Brake
Figure 5
Brake IGBT
Figure 6
Brake IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
0,6
0,5
0,4
0,8
Eon
Eon
Eon
0,6
Eoff
Eon
Eoff
Eoff
0,4
0,2
0,0
0,3
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,2
0,1
0,0
Eoff
Tj = 25°C
Tj = 25°C
0
50
100
150
200
250
300
R G ( Ω )
0
5
10
15
20
I C (A)
With an inductive load at
With an inductive load at
Tj =
Tj =
VCE
VGE
25/125
300
15
°C
V
°C
25/125
VCE
VGE
=
=
=
=
300
15
V
V
A
V
Rgon
Rgoff
=
=
IC =
32
ꢀ
ꢀ
10
16
Figure 7
Brake FWD
Figure 8
Brake FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,25
0,20
0,15
Erec
0,20
Tj = Tjmax - 25°C
0,15
Erec
Tj = Tjmax -25°C
0,10
0,05
0,00
Erec
0,10
Tj = 25°C
Tj = 25°C
Erec
0,05
0,00
0
50
100
150
200
250
300
I C (A)
R G ( Ω )
0
5
10
15
20
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
=
=
300
15
300
15
V
Rgon
=
IC =
32
ꢀ
10
copyright Vincotech
14
Revision: 4
V23990-P544-*2*-PM
Brake
Figure 9
Brake IGBT
Figure 10
Brake IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
1,00
tdoff
tdoff
tf
0,10
0,10
0,01
0,00
tf
tdon
tr
tdon
0,01
0,00
tr
0
50
100
150
200
250
300
R G ( Ω )
I
C (A)
0
5
10
15
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/125
300
15
°C
V
25/125
300
15
°C
=
=
=
=
V
V
A
V
Rgon
Rgoff
=
=
IC =
32
ꢀ
ꢀ
10
16
Figure 11
Brake IGBT
Figure 12
Brake FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
D = 0,5
0,2
10-1
10-1
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101 10
10-5
10-4
10-3
10-2
10-1
100
101 10
At
Thermal grease
RthJH
D =
tp / T
At
Thermal grease
RthJH
D =
tp / T
Phase change interface
RthJH
Phase change interface
RthJH
K/W
=
=
=
=
2,61
K/W
0,60
K/W
3,53
K/W
1,27
copyright Vincotech
15
Revision: 4
V23990-P544-*2*-PM
Brake
Figure 13
Brake IGBT
Figure 14
Brake IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
70
60
50
40
30
20
10
0
25
20
15
10
5
0
o C)
T h (
o C)
0
50
100
150
200
T h
(
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
ºC
175
15
ºC
V
=
Figure 15
Power dissipation as a
Brake FWD
Figure 16
Forward current as a
Brake FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
50
40
30
20
10
0
25
20
15
10
5
0
Th
(
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
ºC
175
ºC
copyright Vincotech
16
Revision: 4
V23990-P544-*2*-PM
Input Rectifier Bridge
Figure 1
Rectifier diode
Figure 2
Rectifier diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
120
100
80
60
D = 0,5
0,2
40
Tj = Tjmax-25°C
0,1
0,05
0,02
0,01
0,005
0.000
t p (s)
20
Tj = 25°C
0
0,0
0,5
1,0
1,5
2,0
VF (V)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp =
tp / T
2,1
250
ꢁs
D =
RthJH
=
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
80
60
40
20
0
50
40
30
20
10
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
17
Revision: 4
V23990-P544-*2*-PM
Thermistor
Figure 1
Thermistor
Figure 2
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
Typical NTC resistance values
1
1
NTC-typical temperature characteristic
B25/100
−
24000
20000
16000
12000
8000
4000
0
R(T) = R25 e
[Ω]
T
T25
25
50
75
100
125
T (°C)
copyright Vincotech
18
Revision: 4
V23990-P544-*2*-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
125 °C
32 Ω
Rgon
Rgoff
16 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
125
200
tdoff
%
%
IC
100
160
VGE 90%
VCE 90%
75
VGE
IC
120
VCE
50
tEoff
80
VGE
25
tdon
VCE
IC 1%
40
0
VCE 3%
VGE 10%
IC 10%
0
-25
tEon
-50
-40
-0,1
0
0,1
0,2
0,3
0,4
0,5
2,9
3
3,1
3,2
3,3
time (us)
time(us)
VGE (0%) =
VGE (0%) =
0
V
0
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
300
15
V
300
15
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,21
0,44
ꢁs
ꢁs
0,02
0,20
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
150
200
%
%
fitted
VCE
150
IC
100
IC 90%
VCE
100
50
0
IC 90%
IC
60%
50
tr
IC 40%
IC10%
tf
0
Ic
IC 10%
-50
-50
0,1
0,15
0,2
0,25
0,3
0,35
0,4
3
3,05
3,1
3,15
3,2
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
300
15
V
300
15
V
A
A
0,09
ꢁs
0,02
ꢁs
copyright Vincotech
19
Revision: 4
V23990-P544-*2*-PM
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
%
%
IC
1%
Poff
Pon
100
150
Eoff
75
50
Eon
100
50
25
VGE 10%
VGE 90%
VCE
3%
0
0
tEon
tEoff
-25
-50
-0,1
0
0,1
0,2
0,3
0,4
0,5
2,9
3
3,1
3,2
3,3
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
4,47
0,40
0,44
kW
mJ
ꢁs
4,47
0,34
0,20
kW
mJ
ꢁs
tEoff
=
tEon =
Figure 7
Output inverter FWD
Figure 8
Output inverter IGBT
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
120
Id
80
15
10
5
trr
40
%
Vd
fitted
0
IRRM 10%
-40
0
-80
IRRM 90%
IRRM 100%
-5
-120
-40
-20
0
20
40
60
80
100
Qg (nC)
120
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
0
V
300
V
15
300
15
V
15
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
V
14
A
trr
=
A
0,21
ꢁs
105,74
nC
copyright Vincotech
20
Revision: 4
V23990-P544-*2*-PM
Switching Definitions Output Inverter
Figure 9
Output inverter FWD
Figure 10
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
125
150
%
%
Erec
Id
100
100
tErec
75
50
25
0
tQrr
50
Qrr
0
Prec
-50
-25
-100
2,9
3,1
3,3
3,5
3,7
2,9
3,1
3,3
3,5
3,7
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
15
A
4,47
0,20
0,49
kW
mJ
ꢁs
Qrr (100%) =
1,01
0,49
ꢁC
ꢁs
tQrr
=
tErec =
copyright Vincotech
21
Revision: 4
V23990-P544-*2*-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
P544-A28
in packaging barcode as
without thermal paste 12mm 2 clips housing
without thermal paste 17mm 2 clips housing
without thermal paste 12mm 2 clips housing
without thermal paste 17mm 2 clips housing
V23990-P544-A28-PM
V23990-P544-A29-PM
V23990-P544-C28-PM
V23990-P544-C29-PM
P544-A28
P544-A29
P544-C28
P544-C29
P544-A29
P544-C28
P544-C29
7
10.8
8.1
5.4
2.7
0
0
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
0
0
0
19.8
22.5
19.8
22.5
19.8
22.5
22.5
22.5
22.5
15
0
7.5
7.5
15
15
22.8
25.5
33.5
33.5
33.5
33.5
7.5
0
Pinout
copyright Vincotech
22
Revision: 4
V23990-P544-*2*-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
23
Revision: 4
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