V23990-P545-C39-PM [VINCOTECH]
Insulated Gate Bipolar Transistor;
| 型号： | V23990-P545-C39-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总16页 (文件大小：840K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
600V / 20A
Features
flow 0 housing
ꢀ 17mm 2-clip housing
ꢀ Trench Fieldstop IGBT's for low saturation losses
Target Applications
ꢀ Industrial Drives
ꢀ Embedded Generation
Schematic
Types
ꢀ V23990-P545-A39-PM
V23990-P545-C39-PM (w/o brake)
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Bridge
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
C
g
y
c
R
s
1
VRRM
IFAV
1600
V
A
Th=80°C
Tc=80°C
Tj=25°C
35
40
250
DC current
tp=10ms
IFSM
A
Tj=25°C
310
I2t-value
I2t
A2s
W
Th=80°C
Tc=80°C
40
60,7
Ptot
Tj=Tjmax
Power dissipation per Diode
Maximum junction temperature
Tjmax
150
°C
Transistor Inverter
Collector-emitter break down voltage
DC collector current
VCE
IC
600
V
A
Th=80°C
Tc=80°C
23
28
Tj=Tjmax
tp limited by
Tjmax
Icpuls
Ptot
VGE
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
60
A
Th=80°C
Tc=80°C
47,4
71,8
Tj=Tjmax
W
V
20
Tjꢁ150°C
VCC=360V
VGE=15V
tSC
SC withstand time*
6
ꢀs
Tjmax
Maximum junction temperature
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Copyright by Vincotech
Revision: 1
1
V23990-P545-A39/C39-PM
final datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Diode Inverter
Th=80°C
Tc=80°C
20,3
27,1
IF
IFRM
Ptot
Tj=Tjmax
DC forward current
A
A
tp limited by
Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
60
Th=80°C
Tc=80°C
36,1
54,6
Tj=Tjmax
W
°C
Tjmax
150
Transistor BRC
VCE
IC
Collector-emitter break down voltage
DC collector current
600
V
A
Th=80°C
Tc=80°C
17
20
Tj=Tjmax
tp limited by
Tjmax
Icpuls
Ptot
VGE
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Th=80°C
45
A
Th=80°C
Tc=80°C
37
56
Tj=Tjmax
W
V
20
Tjꢁ150°C
VCE=360V
VGE=15V
tSC
SC withstand time*
6
ꢀs
Tjmax
Maximum junction temperature
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Diode BRC
Th=80°C
Tc=80°C
16
20
IF
Tj=Tjmax
DC forward current
A
A
tp limited by
Tjmax
IFRM
Ptot
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
Th=80°C
45
Th=80°C
Tc=80°C
28
43
Tj=Tjmax
W
°C
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Top
-40…+125
-40…+125
°C
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=1min
4000
Vdc
mm
mm
min 12,7
min 12,7
CopyrightbyVincotech
Revision: 1
2
V23990-P545-A39/C39-PM
final datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VCE(V) or
VDS(V)
VGE(V) or
VGS(V)
IC(A) or IF(A)
or ID(A)
T(C°)
Min
Max
Input Rectifier Bridge
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0,8
1,16
1,12
0,91
0,79
0,008
0,011
1,35
VF
Vto
rt
Forward voltage
30
30
30
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
V
Ohm
mA
K/W
K/W
0,02
Ir
1500
RthJH
RthJC
Thermal grease
thicknessꢁ50um
ꢂ = 0,61 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,75
Transistor Inverter
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,29m
20
V
V
15
1,55
1,75
0,14
350
0
600
0
mA
nA
20
none
Ohm
ns
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
14
16
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgoff=8 ꢃ
Rgon=16 ꢃ
212
104
0,427
15
300
20
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
0,649
1,1
Cies
Coss
Crss
QGate
RthJH
RthJC
0
25
25
25
0,07
0,03
120
Output capacitance
f=1MHz
0
nF
Reverse transfer capacitance
Gate charge
0
nF
VCC=480V
20
15
nC
Thermal grease
thicknessꢁ50um ꢂ
= 0,61 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
2
K/W
K/W
Diode Inverter
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,81
1,76
2,3
VF
IRM
Diode forward voltage
20
20
20
20
20
V
A
Peak reverse recovery current
Reverse recovery time
Rgon=16 ꢃ
Rgon=16 ꢃ
Rgon=16 ꢃ
Rgon=16 ꢃ
15
15
15
15
300
300
300
300
21,1
192
trr
ns
Qrr
Reverse recovery charge
Reverse recovery energy
Thermal resistance chip to heatsink per chip
ꢀC
1,35
Erec
RthJH
mWs
K/W
0,271
2,63
Thermal grease
thicknessꢁ50um ꢂ
= 0,61 W/mK
RthJC
Thermal resistance chip to case per chip
K/W
Copyright by Vincotech
Revision: 1
3
V23990-P545-A39/C39-PM
final datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VCE(V) or
VDS(V)
VGE(V) or
VGS(V)
IC(A) or IF(A)
or ID(A)
T(C°)
Min
Max
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0.21m
15
V
V
1,64
1,86
15
0
0,04
350
600
0
mA
nA
20
none
Ohm
ns
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
13,5
13,8
202
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=16 ꢃ
Rgoff=8 ꢃ
Fall time
ns
101,1
0,28
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
ꢀWs
ꢀWs
nF
Eoff
0,41
0,86
Cies
Coss
Crss
QGate
RthJH
RthJC
0,055
0,024
87
Output capacitance
f=1MHz
0
25
nF
Reverse transfer capacitance
Gate charge
nF
VCC=480V
15
15
15
nC
K/W
K/W
Thermal grease
thicknessꢁ50um ꢂ
= 0,61 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
2,55
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,85
1,75
2,15
110
VF
Ir
Diode forward voltage
V
Reverse leakage current
0
600
ꢀA
trr
Reverse recovery time
ns
201
Qrr
Reverse recovered charge
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
ꢀC
1,02
Erec
RthJH
RthJC
ꢀWs
K/W
K/W
0,21
3,35
Thermal grease
thicknessꢁ50um
ꢂ = 0,61 W/mK
NTC Thermistor
Rated resistance
R25
DR/R
P
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
23,1
kOhm
%/K
mW
K
Deviation of R100
R100=1503ꢃ
Tol. 3%
Power dissipation given Epcos-Type
B-value
210
3980
B(25/100)
Copyright by Vincotech
Revision: 1
4
V23990-P545-A39/C39-PM
final datasheet
Package Outline and Pinout
Outline
C
Pinout
Copyright by Vincotech
Revision: 1
5
V23990-P545-A39/C39-PM
final datasheet
Copyright by Vincotech
Revision: 1
6
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Output inverter
Figure 1. Typical output characteristics
Figure 2. Typical output characteristics
Output inverter IGBT
Output inverter IGBT
Ic= f(VCE)
Ic= f(VCE)
50
40
30
20
10
0
50
40
30
20
10
0
VCE (V)
VCE (V)
0
1
2
3
4
5
0
1
2
3
4
5
parameter: tp = 250 us Tj = 25 °C
parameter: tp = 250 us Tj = 125 °C
VGE parameter:
from:
7 V to
17 V
VGE parameter:
from:
7 V to
17 V
in
1 V steps
in
1 V steps
Figure 3. Typical transfer characteristics
Output inverter IGBT
Figure 4. Typical diode forward current as
a function of forward voltage
Ic= f(VGE)
Output inverter FRED
IF=f(VF)
24
20
16
12
8
50
40
30
20
10
0
125 oC
125 oC
25 oC
25 oC
4
0
VF (V)
2,5 3
VGE (V)
0
2
4
6
8
10
12
0
0,5
1
1,5
2
VCE =
parameter: tp = 250 us
10 V
parameter: tp = 250 us
Copyright by Vincotech
Revision: 1
7
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Output inverter
Figure 5. Typical switching energy losses
Figure 6. Typical switching energy losses
as a function of collector current
as a function of gate resistor
Output inverter IGBT
E = f (Ic)
Output inverter IGBT
E = f (RG)
1,4
1,2
1
1,4
1,2
1
Eon
0,8
0,6
0,4
0,2
0
0,8
0,6
0,4
0,2
0
Eoff
Eoff
Eon
Erec
Erec
R G ( ꢁ )
150
I C (A)
0
8
16
24
32
40
0
30
60
90
120
inductive load, Tj = 125 °C
VCE = 300 V
inductive load, Tj = 125 °C
VCE = 300 V
VGE=
Rgon=
Rgoff=
15 V
16 ꢃ
8 ꢃ
VGE=
Ic =
15 V
20 A
Figure 7. Typical switching times as a
function of collector current
Figure 8. Typical switching times as a
function of gate resistor
Output inverter IGBT
Output inverter IGBT
t = f (Ic)
t = f (RG)
1
1
tdoff
tdoff
tf
tf
0,1
0,1
tdon
tr
tdon
0,01
0,01
tr
0,001
0,001
0
8
16
24
32
40
IC (A)
0
30
60
90
120
150
R G ( ꢁ )
inductive load, Tj = 125 °C
VCE = 300 V
inductive load, Tj = 125 °C
VCE = 300 V
VGE=
Rgon=
Rgoff=
15 V
16 ꢃ
8 ꢃ
VGE=
Ic =
15 V
20 A
Copyright by Vincotech
Revision: 1
8
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Output inverter
Figure 9. Typical reverse recovery time as a
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
Output inverter FRED diode
IRRM = f (Rgon)
25
20
15
10
5
0,3
0,25
0,2
0,15
0,1
0,05
0
0
R Gon ( ꢁ )
150
0
30
60
90
120
R Gon ( ꢁ )
150
0
30
60
90
120
Tj = 125 °C
VR = 300 V
Tj = 125 °C
VR = 300 V
IF=
20 A
15 V
IF=
20 A
15 V
VGE=
VGE=
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Qrr = f (Rgon)
dI0/dt,dIrec/dt= f (Rgon)
2
1,6
1,2
0,8
0,4
0
2100
1800
1500
1200
900
600
300
0
dI0/dt
dIrec/dt
R Gon ( ꢁ)
120 150
0
30
60
90
R Gon ( ꢁ)
150
0
30
60
90
120
Tj = 125 °C
VR = 300 V
Tj = 125 °C
VR = 300 V
IF=
20 A
15 V
IF=
20 A
15 V
VGE=
VGE=
Copyright by Vincotech
Revision: 1
9
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Output inverter
Figure 13. IGBT transient thermal impedance
Figure 14. FRED transient thermal impedance
as a function of pulse width
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
Parameter: D = tp / T
RthJH= 2,01 K/W
Parameter: D = tp / T
RthJH= 2,63 K/W
IGBT thermal model values
FRED thermal model values
R (C/W)
Tau (s)
R (C/W)
Tau (s)
0,09
0,31
0,94
0,38
0,14
0,14
2,9E+00
3,5E-01
8,8E-02
1,6E-02
2,9E-03
3,3E-04
0,10
0,31
1,14
0,52
0,31
0,26
3,6E+00
3,6E-01
8,0E-02
1,7E-02
2,9E-03
3,3E-04
Copyright by Vincotech
Revision: 1
10
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Output inverter
Figure 15. Power dissipation as a
function of heatsink temperature
Figure 16. Collector current as a
function of heatsink temperature
Output inverter IGBT
Ptot = f (Th)
Output inverter IGBT
Ic = f (Th)
40
35
30
25
20
15
10
5
100
80
60
40
20
0
0
Th ( o C)
Th ( o C)
0
50
100
150
200
0
50
100
150
200
parameter: Tj= 175 ºC
parameter: Tj= 175 ºC
VGE=
15 V
Figure 17. Power dissipation as a
Figure 18. Forward current as a
function of heatsink temperature
Output inverter FRED
Ptot = f (Th)
function of heatsink temperature
Output inverter FRED
IF = f (Th)
80
60
40
20
0
40
35
30
25
20
15
10
5
0
Th ( o C)
Th ( o C)
200
0
50
100
150
200
0
50
100
150
parameter: Tj= 175 ºC
parameter: Tj= 175 ºC
Copyright by Vincotech
Revision: 1
11
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Input rectifier bridge
Figure 1. Typical diode forward current as
a function of forward voltage
Figure 2. Diode transient thermal impedance
as a function of pulse width
Rectifier diode
IF=f(VF)
ZthJH = f(tp)
101
100
10-1
10-2
100
80
60
40
20
0
25°C
125°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
0
0,5
1
1,5
2
parameter: tp = 250 us
Parameter: D = tp / T
RthJH= 1,75 K/W
Figure 3. Power dissipation as a
Figure 4. Forward current as a
function of heatsink temperature
function of heatsink temperature
Rectifier diode
Ptot = f (Th)
Rectifier diode
IF = f (Th)
100
80
60
40
20
0
50
40
30
20
10
0
Th ( o C)
Th ( o C)
0
50
100
150
200
0
50
100
150
200
parameter: Tj= 150 ºC
parameter: Tj= 150 ºC
Copyright by Vincotech
Revision: 1
12
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Thermistor
Figure 1. Typical NTC characteristic
as afunction of temperature
RT = f (T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
T (°C)
25
50
75
100
125
Copyright by Vincotech
Revision: 1
13
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Switching definitions
General conditions:
Tj=
125 °C
Rgon=
Figure 2.
16 ꢃ
Rgoff=
16 ꢃ
Figure 1. Turn-off Switching Waveforms &
definition of tdoff, tEoff
Turn-on Switching Waveforms &
definition of tdon, tEon
(tEoff = integrating time for Eoff)
(tEon = integrating time for Eon)
Output inverter IGBT
Output inverter IGBT
240
200
160
120
140
120
100
80
Ic
tdoff
Uce 90%
Uge 90%
Ic
60
Uce
%
%
tEoff
40
20
0
Uge
80
40
0
tdon
Uce
Ic 1%
Uce3%
Uge10%
Ic10%
-20
Uge
tEon
-40
-40
-0,3 -0,2 -0,1
0
0,1
0,2 0,3
time (us)
0,4
0,5
0,6
0,7
2,8
2,9
3
3,1
3,2
3,3
3,4
time(us)
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
0 V
15 V
300 V
20 A
Uge(0%)=
Uge(100%)=
Uc(100%)= 300 V
Ic(100%)= 20 A
tdon= 0,01 us
tEon
0 V
15 V
tdoff= 0,21 us
tEoff
=
=
0,51 us
0,19 us
Figure 3. Turn-off Switching Waveforms &
definition of tf
Figure 4.
Turn-on Switching Waveforms &
definition of tr
Output inverter IGBT
Output inverter IGBT
140
120
100
80
220
Ic
180
140
%100
60
fitted
Uce
Ic
Ic 90%
Uce
Ic 60%
Ic 40%
%60
40
Ic90%
tr
20
Ic10%
20
tf
Ic10%
0
-20
-20
2,8
2,9
3
3,1
3,2
3,3
3,4
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
time(us)
time (us)
Uc(100%)=
Ic(100%)=
tf=
300 V
20 A
0,104 us
Uc(100%)= 300 V
Ic(100%)=
tr=
20 A
0,016 us
Copyright by Vincotech
Revision: 1
14
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Switching definitions
Figure 5. Turn-off Switching Waveforms &
definition of tEoff
Figure 6.
Turn-on Switching Waveforms &
definition of tEon
Output inverter IGBT
Output inverter IGBT
120
180
140
100
Pon
Poff
100
Eoff
80
Eon
60
%
%
40
60
20
Uge90%
20
Uce3%
Uge10%
3
0
tEoff
tEon
Ic 1%
-20
-20
-0,25
2,8
2,9
3,1
time(us)
3,2
3,3
3,4
-0,1
0,05
0,2
0,35
0,5
0,65
0,8
time (us)
Poff(100%)= 5,99 kW
Eoff(100%)= 0,65 mJ
Pon(100%)= 5,99 kW
Eon(100%)= 0,43 mJ
tEoff
=
tEon=
0,51 us
0,19 us
Figure 7. Gate voltage vs Gate charge
Figure 8.
Turn-off Switching Waveforms &
definition of trr
Output inverter IGBT
Output inverter FRED
20
15
10
5
120
Id
80
40
0
trr
Ud
%
IRRM10%
fitted
-40
-80
0
-5
IRRM90%
IRRM100%
-120
-10
2,8
2,9
3
3,1
3,2
3,3
3,4
3,5
3,6
-50
0
50
100
150
200
time(us)
Qg (nC)
Ugeoff=
Ugeon=
Uc(100%)=
Ic(100%)=
0 V
15 V
300 V
20 A
Ud(100%)= 300 V
Id(100%)=
IRRM(100%)=
20 A
21 A
Qg= 174,7 nC
trr= 0,19 us
Copyright by Vincotech
Revision: 1
15
V23990-P545-A39/C39-PM
final datasheet
flow PIM 0
20A / 600V
Switching definitions
Figure 9. Turn-on Switching Waveforms &
definition of tQrr
Figure 10. Turn-on Switching Waveforms &
definition of tErec
(tQrr= integrating time for Qrr)
Output inverter FRED
(tErec= integrating time for Erec
Output inverter FRED
)
150
120
100
80
Erec
Id
Qrr
100
50
tQint
tErec
60
%
0
%
40
20
0
-50
-100
-150
Prec
-20
2,8
3
3,2
3,4
3,6
3,8
2,8
3
3,2
3,4
3,6
3,8
time(us)
time(us)
Id(100%)=
Qrr(100%)= 1,346 uC
tQint= 0,41 us
20 A
Prec(100%)= 5,99 kW
Erec(100%)= 0,27 mJ
tErec=
0,41 us
Copyright by Vincotech
Revision: 1
16
相关型号：
©2020 ICPDF网 联系我们和版权申明