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V23990-P627-F88-PM [VINCOTECH]

Easy paralleling;High speed switching;Low switching losses;
V23990-P627-F88-PM
型号： V23990-P627-F88-PM
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;High speed switching;Low switching losses
文件： 总17页 (文件大小：1484K)
中文：  中文翻译
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V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
fastPack 0 H  
1200 V / 15 A  
Features  
flow 0 housing  
● High efficient H-bridge  
● High-speed IGBT  
● Ultra high switching frequency  
● Ultra low inductive design  
● Clip-in PCB mounting  
12mm housing  
17mm housing  
Schematic  
Target applications  
● Solar  
● SMPS  
● UPS  
● Welding  
Types  
● V23990-P627-F88-PM  
● V23990-P627-F89-PM  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
H-Bridge Switch  
Collector-emitter voltage  
1200  
22  
V
A
VCES  
IC  
Collector current  
Tj = Tjmax  
Ts =80 °C  
Ts =80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
I CRM  
Ptot  
VGES  
Tjmax  
tp limited by Tjmax  
Tj = Tjmax  
45  
A
71  
W
V
±20  
175  
Maximum Junction Temperature  
°C  
Copyright Vincotech  
1
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Conditions  
Parameter  
Symbol  
Value  
Unit  
H-Bridge Diode  
Peak Repetitive Reverse Voltage  
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
1200  
16  
V
A
A
VRRM  
I F  
Tj = Tjmax  
T
h = 80°C  
Tj = °C  
IFSM  
50 Hz Single Half Sine Wave  
65  
I2  
t
A2s  
W
tp = 10 ms 50 Hz sine  
21  
Total power dissipation  
=
= 80°C  
42  
Ptot  
Tj Tjmax  
Th  
Maximum Junction Temperature  
Tjmax  
175  
°C  
Conditions  
Value  
Parameter  
Symbol  
Unit  
Module Properties  
Thermal Properties  
Storage temperature  
-40…+125  
Tstg  
Tjop  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Visol  
DC voltage  
tp=2s  
4000  
min 12,7  
9,55 / >12,7  
>200  
V
Creepage distance  
Clearance  
mm  
mm  
12mm housing / 17mm housing  
Comparative Tracking Index  
CTI  
Copyright Vincotech  
2
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Unit  
H-Bridge Switch  
V GE [V] V CE [V] IC [A] Tj[ °C]  
Min  
Typ  
Max  
Static  
25  
0,0005  
5,3  
5,8  
6,3  
Gate-emitter threshold voltage  
=
V
V
VGE VCE  
V
(th)  
GE  
125  
25  
1,78  
1,89  
2,28  
2,42  
Collector-emitter saturation voltage  
15  
15  
125  
150  
25  
V
CEsat  
2
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
0
1200  
0
µA  
nA  
Ω
I
CES  
125  
25  
120  
20  
I
GES  
125  
none  
875  
45  
rg  
Input capacitance  
C
ies  
f=1 MHz  
0
25  
25  
pF  
Reverse transfer capacitance  
C
res  
Thermal  
Phase-Change  
Material  
=3,4W/mK  
Thermal resistance junction to sink  
1,35  
K/W  
R
th(j-s)  
ʎ
IGBT Switching  
25  
84  
85  
86  
Turn-on delay time  
td(on)  
125  
150  
25  
Rgoff = 32 Ω  
= 32 Ω  
24  
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
25  
26  
174  
221  
230  
42  
Rgon  
ns  
Turn-off delay time  
Fall time  
td(off)  
±15  
600  
15  
tf  
63  
69  
QrFWD = 1,1 ꢀC  
QrFWD = 2,1 ꢀC  
QrFWD = 2,6 ꢀC  
0,894  
1,283  
1,444  
0,512  
0,815  
0,890  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
E on  
mWs  
E off  
125  
150  
Copyright Vincotech  
3
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Symbol  
Parameter  
Conditions  
Value  
Typ  
Unit  
V
T
r [V] IF [A] j [°C] Min  
Max  
H-Bridge Diode  
Static  
25  
2,37  
2,47  
2,71  
Forward voltage  
15  
125  
150  
25  
V
VF  
60  
Reverse leakage current  
1200  
µA  
Ir  
150  
1800  
Thermal  
Phase-Change  
Material  
Thermal resistance junction to sink  
2,46  
K/W  
R th(j-s)  
ʎ
=3,4W/mK  
FWD Switching  
25  
12  
15  
16  
Peak recovery current  
IRRM  
125  
150  
25  
A
ns  
250  
Reverse recovery time  
trr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
429  
466  
di/dt = 615 A/ꢀs  
di/dt = 691 A/ꢀs ±15  
di/dt = 576 A/ꢀs  
1,122  
2,063  
2,610  
0,439  
0,830  
1,075  
133  
Recovered charge  
Qr  
600  
15  
ꢀC  
Reverse recovered energy  
Peak rate of fall of recovery current  
E rec  
mWs  
A/µs  
(di rf/dt)max  
101  
94  
Thermistor  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
V
GE [V]  
V CE [V]  
I C [A]  
T j[ °C]  
Min  
Max  
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
21,5  
kΩ  
%
R100=1486 Ω  
-4,5  
+4,5  
210  
3,5  
mW  
mW/K  
K
B(25/50)  
3884  
3964  
B-value  
B(25/100)  
K
Vincotech NTC Reference  
F
Copyright Vincotech  
4
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switch Characteristics  
Typical output characteristics  
IGBT  
Typical output characteristics  
IGBT  
IC = f(VCE  
)
I C = f(VCE)  
I
I
I
I
I
I
I
I
tp  
=
250  
15  
ꢀs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
ꢀs  
°C  
VGE  
=
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
Typical transfer characteristics  
IGBT  
Transient Thermal Impedance as function of Pulse duration  
IGBT  
IC = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
10-3  
10-2  
10-1  
10  
101  
102  
tp(s)  
tp  
=
100  
10  
ꢀs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,35  
VCE  
=
=
K/W  
IGBT thermal model values  
R th (K/W)  
1,62E-01  
6,34E-01  
2,82E-01  
1,64E-01  
8,75E-02  
1,75E-02  
τ
(s)  
5,85E-01  
9,42E-02  
2,85E-02  
6,73E-03  
9,43E-04  
3,79E-04  
Copyright Vincotech  
5
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Gate voltage vs Gate charge  
IGBT  
VGE = f(Q G  
)
V
V
V
V
At  
IC=  
15  
A
Copyright Vincotech  
6
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Diode Characteristics  
Typical forward characteristics  
FWD  
Transient thermal impedance as a function of pulse width  
FWD  
IF = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0.000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
ꢀs  
25 °C  
125 °C  
150 °C  
tp / T  
2,24  
T j:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
7,47E-02  
1,66E-01  
9,90E-01  
4,45E-01  
3,36E-01  
2,26E-01  
2,62E+00  
3,82E-01  
7,20E-02  
1,82E-02  
3,41E-03  
6,98E-04  
Thermistor  
Typical Thermistor resistance values  
Thermistor typical temperature characteristic  
Typical NTC characteristic  
as a function of temperature  
R T = f(T)  
Copyright Vincotech  
7
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definition  
Figure 1.  
IGBT  
Figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(rg)  
E = f(IC  
)
E
E
E
E
E
E
E
E
25 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
600  
±15  
32  
V
V
Ω
Ω
j:  
125 °C  
150 °C  
600  
±15  
15  
V
VCE  
VGE  
=
=
=
=
T
VCE  
VGE  
IC  
=
=
=
T j:  
V
A
R gon  
R goff  
32  
Figure 3.  
FWD  
Figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(Ic)  
Erec = f(rg )  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
600  
±15  
32  
V
V
Ω
:
600  
±15  
15  
V
V
A
VCE  
VGE  
=
=
=
T j  
VCE  
VGE  
IC  
=
=
=
T j  
R gon  
Copyright Vincotech  
8
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definitions  
Figure 5.  
IGBT  
Figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(rg)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
600  
±15  
32  
°C  
150  
600  
±15  
15  
°C  
Tj =  
Tj =  
VCE  
=
=
=
=
V
V
Ω
Ω
VCE  
=
=
=
V
V
A
VGE  
R gon  
R goff  
VGE  
IC  
32  
Figure 7.  
FWD  
Figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
600  
600  
±15  
32  
V
V
Ω
25 °C  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
125 °C  
150 °C  
±15  
15  
VGE  
R gon  
=
=
Tj  
VGE  
IC  
=
Tj  
=
Copyright Vincotech  
9
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definition  
Figure 9.  
FWD  
Figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q r = f(IC  
)
Qr = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
25 °C  
600  
V
V
Ω
600  
±15  
15  
V
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
IC  
=
:
:
±15  
32  
125 °C  
150 °C  
V
A
=
T j  
=
T j  
=
=
Figure 11.  
FWD  
Figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
IRM = f(R gon  
)
I
I
I I  
I I  
I
I
25 °C  
600  
V
V
Ω
600  
±15  
15  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
±15  
32  
125 °C  
150 °C  
VGE  
R gon  
=
=
T j  
VGE  
IC  
=
T j  
=
Copyright Vincotech  
10  
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definition  
Figure 13.  
FWD  
Figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(Ic)  
di F/dt,di rr/dt = f(R g)  
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
dir r/d  
t
i
i
i
i
dir r  
/dt  
i
i
i
i
25 °C  
125 °C  
150 °C  
600  
±15  
32  
V
V
Ω
600  
±15  
15  
V
At  
VCE  
=
At  
VCE  
VGE  
IC  
=
:
V
A
VGE  
=
=
T j  
=
R gon  
=
Figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(V CE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj =  
32  
32  
R gon =  
R goff =  
Ω
Copyright Vincotech  
11  
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definition  
General conditions  
=
=
=
125 °C  
32 Ω  
T j  
Rgon  
R goff  
32 Ω  
Figure 1.  
IGBT  
Figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VCE  
IC  
VCE  
VGE  
tEoff  
VGE  
tEon  
-15  
V
V
V
A
-15  
V
VGE (0%) =  
VGE (0%) =  
15  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
VGE (100%) =  
VC (100%) =  
IC (100%) =  
600  
15  
600  
15  
V
A
0,221  
0,403  
ꢀs  
0,085  
0,329  
ꢀs  
ꢀs  
tdoff  
tEoff  
=
=
tdon  
tEon  
=
=
ꢀs  
Figure 3.  
IGBT  
Figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
VCE  
IC  
VCE  
tr  
tf  
600  
600  
V
V
VC (100%) =  
I C (100%) =  
tf =  
VC (100%) =  
IC (100%) =  
15  
A
15  
A
0,063  
µs  
0,025  
µs  
tr  
=
Copyright Vincotech  
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22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definition  
Figure 5.  
IGBT  
Figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Eoff  
Poff  
Eon  
tEoff  
tEon  
9,05  
kW  
mJ  
ꢀs  
9,05  
1,28  
0,33  
kW  
mJ  
ꢀs  
Poff (100%) =  
Eoff (100%) =  
Pon (100%) =  
Eon (100%) =  
0,82  
0,40  
tEoff  
=
tEon =  
Figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Id  
Vd  
fitted  
Vd (100%) =  
I d (100%) =  
I RRM (100%) =  
600  
V
A
A
15  
-15  
Copyright Vincotech  
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22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
H-Bridge Switching Definition  
Figure 8.  
FWD  
Figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr  
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Id  
Qrr  
Erec  
tErec  
Prec  
I d (100%) =  
15  
A
Prec (100%) =  
Erec (100%) =  
9,05  
kW  
mJ  
ꢀs  
Q rr (100%) =  
2,06  
0,86  
ꢀC  
ꢀs  
0,83  
0,86  
tQrr  
=
tErec =  
Copyright Vincotech  
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22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Ordering Code & Marking  
Version  
Ordering Code  
V23990-P627-F88  
V23990-P627-F89  
in DataMatrix as  
in packaging barcode as  
P627F88  
without thermal paste 12mm housing  
without thermal paste 17mm housing  
P627F88  
P627F89  
P627F89  
Vinco  
Vinco  
Date code  
WWYY  
Name&Ver  
UL  
UL  
Lot  
Serial  
Vinco WWYY  
NNNNNNNVV UL  
LLLLL SSSS  
Text  
NNNNNNNVV  
Serial  
LLLLL  
SSSS  
Type&Ver  
TTTTTTTVV  
Lot number  
LLLLL  
Date code  
WWYY  
Datamatrix  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
G11  
0
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
17,8  
15,3  
7,2  
4,7  
0
2
2,9  
8,3  
10,8  
19,6  
22,1  
29,1  
32  
S11  
3
DC-  
4
DC-  
5
DC+  
DC+  
S12  
6
7
8
G12  
9
33,5  
33,5  
33,5  
33,5  
32  
OUT1  
OUT1  
OUT2  
OUT2  
G14  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
29,1  
22,1  
19,6  
10,8  
8,3  
2,9  
0
0
S14  
0
DC+  
DC+  
DC-  
0
0
0
DC-  
0
S13  
0
G13  
0
8
Therm1  
Therm2  
0
14,5  
Copyright Vincotech  
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22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11-T14  
IGBT  
1200V  
15A  
15A  
-
H-Bridge Switch  
D11-D14  
Rt  
FWD  
NTC  
1200V  
-
H-Bridge Diode  
Thermistor  
Copyright Vincotech  
16  
22 Okt. 2015 / Revision 2  
V23990-P627-F88-PM  
V23990-P627-F89-PM  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ)  
135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
V23990-P627-F8x-D2-14  
22 Okt. 2015  
Module properties correction  
2
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
22 Okt. 2015 / Revision 2  

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