V23990-P629-L59-PM [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | V23990-P629-L59-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总21页 (文件大小：7755K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P629-L59-PM
datasheet
flowBOOST 0 dual
1200 V / 40 A
Features
flow 0 17 mm housing
● High efficiency dual boost
● Ultra fast switching frequency
● Low Inductance Layout
● 1200V IGBT and 1200V Si diode
Schematic
Target applications
● solar inverter
Types
● V23990-P629-L59-PM
Copyright Vincotech
1
11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
1200
42
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
115
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
43
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
365
98
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
10
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
6
A
Ptot
25
W
°C
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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V23990-P629-L59-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
ByPass Diode
VRRM
Peak repetitive reverse voltage
1600
38
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
47
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0015
40
25
5,3
5,8
6,3
V
25
1,78
2,11
2,48
2,42(1)
15
0
V
125
1200
0
25
25
5
µA
nA
Ω
20
120
None
2330
150
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 960 V
15
40
185
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,82
K/W
25
22,4
20,8
8,4
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
10,6
224,6
293
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
0/15
700
24
34,48
67,86
1,09
1,82
1
tf
ns
125
25
QrFWD=2,24 µC
QrFWD=5,02 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
1,61
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,29
2,37
2,54(1)
VF
IR
Forward voltage
50
125
150
25
V
2,5(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
4400
0,97
8800
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
K/W
25
62,76
78,31
82,95
207,96
2,24
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=3264 A/µs
di/dt=3300 A/µs
Qr
0/15
700
24
μC
125
25
5,02
0,982
2,42
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
5304
3201
(dirf/dt)max
125
Copyright Vincotech
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V23990-P629-L59-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,23
1,67
1,58
1,97(1)
27
VF
IR
Forward voltage
3
V
125
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,8
K/W
ByPass Diode
Static
25
0,96
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
0,865
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,49
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0,0
2,5
5,0
7,5
10,0
12,5
0,0
2,5
5,0
7,5
10,0
12,5
VCE(V)
V
CE(V)
tp
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
=
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
40
10
-1
30
20
10
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,825
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,14E-02
2,77E-01
3,52E-01
8,40E-02
3,10E-02
1,87E+00
2,47E-01
7,24E-02
1,01E-02
1,06E-03
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11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
CE(V)
V
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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11 Sep. 2021 / Revision 3
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datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,971
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,69E-02
1,47E-01
4,96E-01
1,74E-01
8,75E-02
3,87E+00
4,68E-01
9,12E-02
2,26E-02
5,01E-03
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11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
8
6
4
2
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,796
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,82E-02
1,95E-01
9,84E-01
6,58E-01
5,09E-01
3,71E-01
2,45E+00
2,65E-01
4,77E-02
1,23E-02
2,70E-03
5,98E-04
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datasheet
ByPass Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,487
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
1,10E-01
1,38E-01
6,16E-01
3,90E-01
1,63E-01
7,11E-02
7,06E+00
3,93E-01
6,84E-02
1,63E-02
2,51E-03
5,88E-04
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datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Boost Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
Ω
125 °C
700
0/15
24
V
125 °C
V
A
Rgon
Rgoff
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
700
0/15
24
V
125 °C
V
A
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datasheet
Boost Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
-1
10
0
10
tf
td(on)
tr
-2
10
-1
td(on)
10
tr
tf
-3
10
-2
10
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
700
0/15
4
°C
V
125
700
0/15
24
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
700
0/15
24
V
125 °C
V
A
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datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
12
10
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
4
Qr
2
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
700
0/15
24
V
125 °C
V
A
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
100
80
60
40
20
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
700
0/15
24
V
V
A
125 °C
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datasheet
Boost Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
7000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
700
0/15
24
V
V
A
125 °C
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
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datasheet
Boost Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
17
11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Boost Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
18
11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
V23990-P629-L59-PM
V23990-P629-L59-/7/-PM
V23990-P629-L59-/3/-PM
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
Function
G1
0
2
2,9
S1
3
8,3
DC1-
DC1-
Out1
4
10,8
19,6
22,1
29,1
32
5
6
Out1
7
Sol1A
Sol1B
Boost1A
Boost1B
Boost2A
Boost2B
Sol2A
Sol2B
Out1
8
9
33,5
33,5
33,5
33,5
32
10
11
12
13
14
15
16
17
18
19
20
21
22
29,1
22,1
19,6
10,8
8,3
0
0
0
Out1
0
DC2-
DC2-
S2
0
2,9
0
0
0
G2
0
8
NTC1
NTC2
0
14,5
Copyright Vincotech
19
11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Pinout
Out1
5,6,15,16
D7
D8
Sol1A
7
Sol2A
13
Sol1B
Sol2B
8
14
D1
D4
Boost1A
9
Boost2A
11
Boost1B
10
Boost2B
12
T1
T2
D9
D10
G1
1
G2
20
S1
2
S2
19
NTC
DC1-
3,4
DC2-
17,18
NTC2
22
NTC1
21
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2
D1, D4
D9, D10
D7, D8
NTC
IGBT
FWD
1200 V
1200 V
1200 V
1600 V
40 A
50 A
3 A
Boost Switch
Boost Diode
FWD
Boost Sw. Protection Diode
ByPass Diode
Rectifier
Thermistor
25 A
Thermistor
Copyright Vincotech
20
11 Sep. 2021 / Revision 3
V23990-P629-L59-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Introduce Rth values with PSX-P7 TIM
V23990-P629-L59-PM-D3-14
11 Sep. 2021
Separate datasheet for pressfit pin version
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
21
11 Sep. 2021 / Revision 3
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