V23990-P707-F40-PM [VINCOTECH]
Clip-in PCB mounting;
| 型号： | V23990-P707-F40-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Clip-in PCB mounting PC |
| 文件： | 总17页 (文件大小：1461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P707-F40-PM
preliminary datasheet
flow90PACK 1 2nd gen
1200V/8A
Features
● Trench Fieldstop IGBT4 Technology
● Supports designs with 90° mounting angle between
heatsink and PCB
flow90PACK 1 2nd gen
● Clip-in PCB mounting
● Clip or screw hetasink mounting
Target Applications
Schematic
● Motor Drives
Types
● V23990-P707-F40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter IGBT
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
V
A
Th=80°C
14
17
Tj=Tjmax
Tc=80°C
ICpulse
tp limited by Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
24
24
A
VCE ≤ 1200V, Tj ≤ Top max
A
Th=80°C
Tc=80°C
50
76
Ptot
Tj=Tjmax
W
V
VGE
±20
tSC
Tj≤150°C
10
μs
VCC
VGE=15V
800
V
Tjmax
Maximum Junction Temperature
175
°C
Inverter FWD
Tj=25°C
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
13
16
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
20
A
Th=80°C
Tc=80°C
40
61
W
°C
Tjmax
175
copyright Vincotech
1
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
2
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Inverter IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0003
8
V
V
1,3
1,88
2,16
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0,001
120
0
1200
0
mA
nA
Ω
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
104
25
Rise time
28
ns
227
297
68
140
0,66
1,01
0,48
0,81
td(off)
tf
Turn-off delay time
Rgoff=64 Ω
Rgon=64 Ω
±15
600
8
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
490
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
30
±15
960
8
45
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,90
K/W
Inverter FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,77
1,69
8
2,2
VF
IRRM
trr
Diode forward voltage
10
8
V
A
Peak reverse recovery current
Reverse recovery time
9
271
448
0,84
1,72
29
24
0,30
0,64
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=64 Ω
±15
600
μC
di(rec)max
/dt
A/μs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,36
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
%
ΔR/R R100=1486 Ω
-5
5
P
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
3
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Typical output characteristics
Typical output characteristics
I
C = f(VCE
)
IC = f(VCE)
25
20
15
10
5
25
20
15
10
5
0
0
0
V
CE (V)
VCE (V)
0
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
μs
250
150
μs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Output inverter IGBT
Figure 4
Output inverter FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
8
7
6
5
4
3
2
1
25
20
15
10
Tj = Tjmax-25°C
Tj = Tjmax-25°C
5
Tj = 25°C
Tj = 25°C
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
3
At
At
tp =
tp =
250
10
μs
250
μs
VCE
=
V
copyright Vincotech
4
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
0
4
8
12
16
0
64
128
192
256
320
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
64
600
±15
8
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
64
Figure 7
Output inverter FWD
Figure 8
Output inverter FWD
Typical reverse recovery energy loss
as a function of collector current
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
Erec = f(IC)
1,0
1
Erec
Tj = Tjmax -25°C
0,8
0,6
0,4
0,2
0,0
0,8
0,6
Erec
Tj = Tjmax -25°C
Tj = 25°C
Erec
0,4
Erec
0,2
0
Tj = 25°C
I C (A)
R G ( Ω )
0
4
8
12
16
0
64
128
192
256
320
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
±15
8
°C
V
=
=
=
=
±15
V
V
Rgon
=
64
Ω
A
copyright Vincotech
5
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 9
Output inverter IGBT
Figure 10
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
1,00
0,10
0,01
0,00
tdoff
tdon
tf
tdoff
tf
0,10
tr
tdon
tr
0,01
0,00
I
C (A)
R G ( Ω )
0
4
8
12
16
0
64
128
192
256
320
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
64
°C
V
150
600
±15
8
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
64
Figure 11
Output inverter FWD
Figure 12
Output inverter FWD
Typical reverse recovery time as a
function of collector current
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
1,0
0,8
0,6
trr
0,6
0,4
trr
Tj = Tjmax -25°C
trr
Tj = Tjmax -25°C
trr
0,4
0,2
0,0
0,2
0,0
Tj = 25°C
Tj = 25°C
I C (A)
R g on ( Ω )
0
4
8
12
16
0
64
128
192
256
320
At
At
Tj =
Tj =
VCE
VGE
25/150
°C
V
25/150
600
8
°C
V
=
=
VR =
IF =
600
±15
64
V
A
Rgon
=
VGE =
Ω
±15
V
copyright Vincotech
6
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 13
Output inverter FWD
Figure 14
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q
rr = f(IC)
Qrr = f(Rgon)
2,5
2,5
Qrr
2,0
1,5
2,0
Tj = Tjmax -25°C
Qrr
1,5
1,0
0,5
0,0
Tj = Tjmax -25°C
Qrr
1,0
0,5
0,0
Qrr
Tj = 25°C
Tj = 25°C
I C (A)
R g on ( Ω)
0
4
8
12
16
0
64
128
192
256
320
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
°C
V
25/150
600
8
°C
V
=
600
±15
64
=
V
A
Rgon
=
VGE =
Ω
±15
V
Figure 15
Output inverter FWD
Figure 16
Output inverter FWD
Typical reverse recovery current as a
function of collector current
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(IC)
IRRM = f(Rgon)
12
10
8
25
Tj = Tjmax - 25°C
20
15
10
5
IRRM
IRRM
Tj = Tjmax -25°C
6
Tj = 25°C
Tj = 25°C
4
2
IRRM
IRRM
0
0
I C (A)
R gon ( Ω )
0
4
8
12
16
0
64
128
192
256
320
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
=
=
±15
V
A
Rgon
=
VGE =
64
Ω
±15
V
copyright Vincotech
7
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 17
Output inverter FWD
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
500
1500
dI0/dt
μ
dI0/dt
dIo/dtLow T
di0/dtHigh T
dIrec/dt
dIrec/dt
1200
400
di0/dtHigh T
900
600
300
300
200
100
dIrec/dtHigh T
dIrec/dtLow T
dIrec/dtLow T
dIrec/dtHigh T
dIo/dtLow T
0
0
0
64
128
192
256
320
I C (A)
R gon ( Ω )
0
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
=
=
±15
V
A
Rgon
=
VGE =
64
Ω
±15
V
Figure 19
Output inverter IGBT
Figure 20
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
101
1
10-4
10-3
10-2
10-1
100
101
1
At
At
tp / T
1,90
tp / T
2,36
D =
RthJH
D =
=
RthJH =
K/W
K/W
IGBT thermal model values
Phase change interface
FWD thermal model values
Thermal grease Phase change interface
Thermal grease
R (C/W)
0,08
Tau (s)
R (C/W)
0,06
Tau (s)
1,3E+00
2,2E-01
3,8E-02
5,3E-03
4,6E-04
R (C/W)
0,07
Tau (s)
R (C/W)
0,06
Tau (s)
4,5E+00
3,8E-01
7,2E-02
8,2E-03
6,1E-04
1,6E+00
2,7E-01
4,7E-02
6,5E-03
5,7E-04
5,6E+00
4,7E-01
8,9E-02
1,0E-02
7,5E-04
0,54
0,44
0,25
0,20
0,67
0,54
1,04
0,84
0,41
0,34
0,65
0,53
0,21
0,17
0,34
0,28
copyright Vincotech
8
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 21
Output inverter IGBT
Figure 22
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Collector current as a
function of heatsink temperature
Ptot = f(Th)
IC = f(Th)
100
80
60
40
20
0
20
16
12
8
4
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
Tj =
At
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
function of heatsink temperature
Output inverter FWD
Figure 24
Forward current as a
Output inverter FWD
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
80
20
16
12
8
60
40
20
4
0
0
0
T h
(
o C)
T h (
o C)
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Output Inverter
Figure 25
Output inverter IGBT
Figure 26
Output inverter IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
)
103
20
18
16
14
12
10
8
240V
102
960V
10uS
100uS
101
100mS
DC
1mS
10mS
100
6
4
10-1
2
0
0
10
20
30
40
50
60
70
Q g (nC)
100
103
101
102
VCE (V)
At
At
IC
=
D =
Th =
8
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
Figure 27
Output inverter IGBT
Figure 28
Output inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
tsc = f(VGE
)
VGE = f(QGE
)
16
100
14
12
10
8
80
60
40
20
6
4
2
0
0
12
13
14
15
16
17
18
19
20
VGE (V)
12
13
14
15
16
17
VGE (V)
At
At
VCE
=
VCE
Tj =
≤
1200
175
V
1200
175
V
Tj ≤
ºC
ºC
copyright Vincotech
10
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Figure 29
IGBT
Reverse bias safe operating area
IC = f(VCE
)
20
18
16
14
12
10
8
ICMAX
6
4
2
0
0
200
400
600
800
1000
1200
1400
V
CE (V)
At
Tj =
Tjmax-25
ºC
3phase SPWM
Uccminus=Uccplus
Switching mode :
copyright Vincotech
11
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Thermistor
Figure 1
Thermistor
Figure 2
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
Typical NTC resistance values
1
1
NTC-typical temperature characteristic
B25/100
⋅
−
24000
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
R(T) = R25 ⋅e
[Ω]
T
T25
25
45
65
85
105
T (°C)
125
copyright Vincotech
12
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
64 Ω
Rgon
Rgoff
64 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon
)
250
140
IC
120
tdoff
200
150
VCE
100
VGE 90%
VCE 90%
80
60
IC
VCE
100
VGE
%
%
tdon
40
tEoff
50
20
0
VCE 3%
VGE10%
IC 1%
IC10%
0
tEon
VGE
-20
-50
-0,3
-0,1
0,1
0,3
0,5
0,7
0,9
2,7
2,85
3
3,15
3,3
3,45
3,6
3,75
time (us)
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
V
600
8
V
600
8
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,30
0,72
μs
μs
0,10
0,39
μs
μs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
250
Ic
120
fitted
VCE
200
IC
100
IC 90%
150
80
VCE
60
100
IC
60%
%
IC 90%
%
tr
40
IC 40%
50
20
IC 10%
IC 10%
0
0
tf
-20
-50
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0,45
3
3,05
3,1
3,15
3,2
3,25
3,3
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
V
600
V
8
A
8
A
0,14
μs
0,03
μs
copyright Vincotech
13
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
200
Pon
IC
1%
Eoff
100
160
120
Poff
80
Eon
60
%
80
%
40
40
20
VCE
3%
VGE 10%
VGE 90%
0
tEon
0
tEoff
-40
-20
2,8
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
3,6
-0,3
-0,15
0
0,15
0,3
0,45
0,6
0,75
0,9
time (us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
4,78
kW
mJ
μs
4,78
kW
mJ
μs
0,81
0,72
1,01
0,39
tEoff
=
tEon =
Figure 7
Output inverter FWD
Figure 8
Output inverter IGBT
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
150
%
15
10
5
Id
100
trr
50
Vd
fitted
IRRM 10%
0
0
-50
-5
-10
-15
-20
-100
-150
IRRM 90%
IRRM 100%
-20
0
20
40
60
80
2,8
3
3,2
3,4
3,6
3,8
4
Qg (nC)
time(us)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
15
V
600
V
V
8
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
600
8
V
-9
A
trr
=
A
0,45
μs
66,35
nC
copyright Vincotech
14
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Switching Definitions Output Inverter
Figure 9
Output inverter FWD
Figure 10
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
Erec
Id
Qrr
100
80
100
tQrr
tErec
50
60
0
%
40
Prec
%
-50
-100
-150
20
0
-20
2,8
3
3,2
3,4
3,6
3,8
4
4,2
time(us)
4,4
2,8
3
3,2
3,4
3,6
3,8
4
4,2
4,4
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
8
A
4,78
0,64
0,90
kW
mJ
μs
Qrr (100%) =
1,72
0,90
μC
μs
tQrr
=
tErec =
copyright Vincotech
15
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
P707-F40
in packaging barcode as
without thermal paste 12mm housing
V23990-P707-F40
P707-F40
Outline
Pinout
copyright Vincotech
16
Revision: 1
V23990-P707-F40-PM
preliminary datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
Revision: 1
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