V23990-P829-F-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P829-F-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总17页 (文件大小：3849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
flowPACK 1
1200 V / 50 A
Features
flow1 housing
● Compact flow 1 housing
● Trench Fieldstop IGBT4 technology
● Compact and low inductance design
● AlN substrate for improved performance
● Built-in NTC
17 mm housing
with solder pins
17 mm housing
with Press-fit pins
12 mm housing
with solder pins
12 mm housing
Target applications
with Press-fit pins
● Motor Drive
● Power generation
● UPS
Schematic
Types
● V23990-P829-F-PM
● V23990-P829-FY-PM
● V23990-P829-F08-PM
● V23990-P829-F08Y-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
71
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
150
216
±20
A
W
V
tSC
Tj ≤ 150°C
VGE = 15V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
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V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
1200
65
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80°C
Ts = 80°C
100
146
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching
condition
-40…(Tjmax - 25)
Isolation Properties
DC Test Voltage
AC Voltage
= 2 s
6000
2500
V
tp
Isolation voltage
Visol
tp = 1 min
V
Creepage distance
min. 12,7
12,64
min. 12,7
7,81
mm
mm
mm
mm
mm
17mm housing with solder pins
17mm housing with Press-fit pins
12mm housing with solder pins
12mm housing with Press-fit pins
Clearance
7,9
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
25
0,0017
5,3
5,8
6,3
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
VGE = VCE
V
V
125
25
1,58
1,88
2,30
2,07
15
0
50
150
1200
0
25
25
1
µA
nA
Ω
IGES
rg
20
120
4
Cies
Input capacitance
2800
100
f = 1 MHz
0
25
25
pF
Cres
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,44
K/W
IGBT Switching
Turn-on delay time
Rise time
25
150
25
150
25
150
25
150
25
150
25
150
96
101
17
24
214
281
87
122
2,701
4,211
2,744
4,531
td(on)
tr
td(off)
tf
Rgoff = 8 Ω
Rgon = 8 Ω
ns
Turn-off delay time
Fall time
±15
600
50
QrFWD = 4,8 μC
QrFWD = 9,7 μC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Copyright Vincotech
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V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
150
1,73
1,70
1,68
2,05
10
VF
Ir
Forward voltage
50
V
Reverse leakage current
1200
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,65
K/W
FWD Switching
25
150
25
150
25
150
25
150
25
150
81
85
139
316
4,797
9,708
1,790
3,972
4803
1209
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
di/dt = 3866 A/μs
di/dt = 2820 A/μs
±15
600
50
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
4,7
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 401 Ω
-12,4
12,4
210
3,5
mW
mW/K
K
B(25/50)
3590
3650
B-value
B(25/100)
K
Vincotech NTC Reference
D
Copyright Vincotech
4
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
tp
=
250
15
μs
V
25 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,44
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
9,12E-02
1,84E-01
9,04E-02
4,02E-02
3,41E-02
6,01E-01
8,26E-02
2,81E-02
2,85E-03
4,57E-04
Copyright Vincotech
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V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switch Characteristics
Safe operating area
IGBT
IC = f(VCE
)
I
At
single pulse
80 ºC
D =
Ts
VGE
Tj =
=
=
±15
V
Tjmax
ºC
Copyright Vincotech
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18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,65
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
2,16E-02
7,48E-02
1,39E-01
2,24E-01
7,32E-02
5,99E-02
5,87E-02
5,63E+00
7,71E-01
1,16E-01
3,15E-02
6,56E-03
1,57E-03
3,68E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T)
Copyright Vincotech
7
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
8
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
50
V
V
A
T j:
R gon
R goff
8
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
600
±15
8
V
V
Ω
:
600
±15
50
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
8
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
8
°C
V
150
600
±15
50
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
25 °C
150 °C
At
VCE
=
600
V
V
A
25 °C
150 °C
:
:
Tj
VGE
R gon
=
=
±15
8
Tj
VGE
I C
=
±15
50
=
Copyright Vincotech
9
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
±15
8
V
V
Ω
25 °C
150 °C
600
±15
50
V
V
A
25 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
T j
=
T j
=
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
8
V
V
Ω
25 °C
150 °C
At
VCE
VGE
I C
=
600
±15
50
V
V
A
25 °C
150 °C
:
:
T j
VGE
R gon
=
=
T j
=
=
Copyright Vincotech
10
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
d
iF/
/
dt
d
iF/dt
t
i
t
i
dirr
dt
dir r/dt
600
25 °C
150 °C
25 °C
150 °C
At
VCE
=
V
V
Ω
At
VCE
VGE
I C
=
600
±15
50
V
V
A
:
:
T j
±15
8
VGE
=
=
T j
=
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon =
R goff =
8
8
Ω
Copyright Vincotech
11
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Definitions
=
=
=
T j
Rgon
150 °C
8 Ω
R goff
8 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VCE
IC
VGE
VCE
VGE
tEoff
tEon
-15
-15
V
V
VGE (0%) =
VGE (0%) =
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
50
V
600
50
V
A
A
0,281
0,710
μs
μs
0,101
0,345
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
V
600
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
50
A
A
0,122
μs
0,024
μs
tr
=
Copyright Vincotech
12
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
30,10
4,53
0,71
kW
mJ
μs
P on (100%) =
Eon (100%) =
30,10
4,21
kW
mJ
μs
0,345
t Eoff
=
tEon =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
Vd (100%) =
I d (100%) =
I RRM (100%) =
600
50
V
A
-85
A
0,316
μs
t rr
=
Copyright Vincotech
13
18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Qrr
Id
tErec
Prec
50
A
30,10
3,97
0,63
kW
mJ
μs
I d (100%) =
P rec (100%) =
Erec (100%) =
Q rr (100%) =
9,71
0,63
μC
μs
t Qrr
=
tErec =
Copyright Vincotech
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18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Ordering Code & Marking
Version
with thermal paste 17mm housing with solder pins
Ordering Code
V23990-P829-F-/3/-PM
V23990-P829-FY-/3/-PM
V23990-P829-F08Y-/3/-PM
V23990-P829-F08-/3/-PM
V23990-P829-F-PM
V23990-P829-FY-PM
V23990-P829-F08Y-PM
V23990-P829-F08-PM
with thermal paste 17mm housing with Press-fit pins
with thermal paste 12mm housing with Press-fit pins
with thermal paste 12mm housing with solder pins
without thermal paste 17mm housing with solder pins
without thermal paste 17mm housing with Press-fit pins
without thermal paste 12mm housing with Press-fit pins
without thermal paste 12mm housing with solder pins
VIN
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
LLLLL
SSSS
Name&Ver
NNNNNNNVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
0
Function
52,6
49,9
42,65
39,65
35,15
28,4
24
DC-
DC-
G6
2
3
4
S6
17 mm housing Press-fit
12 mm housing Press-fit
5
NTC1
NTC2
G4
6
7
8
21
12,2
9,2
2,7
0
0
0
S4
9
G2
10
11
12
13
14
15
16
0
S2
0
DC-
DC-
0
0
14,65
14,65
28,6
28,6
DC+
DC+
U
2,7
0
2,7
U
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
5,4
9,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,65
14,65
U
S1
G1
V
12,6
19,6
22,3
25
V
V
29,7
32,7
39,7
42,7
47,2
49,9
52,6
52,6
49,9
S3
G3
S5
G5
W
W
17 mm housing solder pin
12 mm housing solder pin
W
DC+
DC+
Copyright Vincotech
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18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1,T2,T3,T4,T5,T6
IGBT
1200 V
50 A
50 A
Inverter Switch
D1,D2,D3,D4,D5,D6
NTC
FWD
1200 V
Inverter Diode
Thermistor
Thermistor
Copyright Vincotech
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18 Jul. 2017 / Revision 4
V23990-P829-F*-PM
V23990-P829-F08*-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P829-F08x-D4-14
18 Jul. 2017
V23990-P829-F08-PM version added
all
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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18 Jul. 2017 / Revision 4
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