V23990-P840-C49-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P840-C49-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总24页 (文件大小：1272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P840-*4*-PM
datasheet
flow PIM 0 3rd gen
Features
1200 V / 15 A
flow 0 housing
● 2 Clips housing in 12 and 17mm height
● Trench Fieldstop Technology IGBT4
● Optional w/o BRC
12mm housing
17mm housing
Target Applications
● Industrial Drives
Schematic
● Embedded Generation
Types
● V23990-P840-A48-PM
● V23990-P840-A49-PM
● V23990-P840-C48-PM
● V23990-P840-C49-PM
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
I FSM
1600
V
A
T s = 80°C
T c = 80°C
27
30
T j = T jmax
t p = 10 ms
T j = T jmax
Surge forward current
I2t-value
220
200
A
I 2
t
A2s
W
°C
T s = 80°C
T c = 80°C
33
50
P tot
Power dissipation
T jmax
Maximum Junction Temperature
150
Inverter IGBT
V CE
I C
Collector-emitter break down voltage
1200
V
A
T s = 80°C
T c = 80°C
18
24
T j = T jmax
DC collector current
I CRM
t p limited by T jmax
Pulsed collector current
Turn off safe operating area
Power dissipation
45
30
A
V CE ≤ 1200 V, T j ≤ T op max
T j = T jmax
A
T s = 80°C
T c = 80°C
52
79
P tot
V GE
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter FWD
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
V
A
T s = 80°C
T c = 80°C
20
25
T j = T jmax
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
30
A
T s = 80°C
T c = 80°C
38
57
W
°C
T jmax
Maximum Junction Temperature
175
Brake IGBT
V CE
I C
Collector-emitter break down voltage
1200
V
A
T s = 80°C
T c = 80°C
12
15
T j = T jmax
DC collector current
I CRM
t p limited by T jmax
Pulsed collector current
Turn off safe operating area
Power dissipation
24
16
A
V CE ≤ 1200 V, T j ≤ T op max
T j = T jmax
A
T s = 80°C
T c = 80°C
40
61
P tot
V GE
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
Brake FWD
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
V
A
T s = 80°C
T c = 80°C
10
10
T j = T jmax
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
15
A
T s = 80°C
T c = 80°C
22
34
W
°C
T jmax
Maximum Junction Temperature
150
Thermal Properties
Storage temperature
T stg
T op
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Isolation Properties
Isolation voltage
V is
t = 2 s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
2
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
or V CE
[V] or
I C [A]
or I F
[A] or
V GE [V]
or V GS
[V]
T j [°C]
Min
Max
V DS [V] I D [A]
Rectifier Diode
25
125
25
125
25
125
25
1,17
1,13
0,93
0,79
9,78
13,37
1,9
V F
V to
r t
Forward voltage
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
25
25
mΩ
mA
0,05
1,1
I r
1600
145
phase-change
material
R th(j-s)
K/W
Thermal resistance chip to heatsink
1,61
λ = 3,4 W/mK
Inverter IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0005
25
5
5,8
6,5
V
V
25
125
1,58
1,94
2,26
2,07
15
0
1200
0
25
25
0,002
120
mA
nA
Ω
20
none
25
125
25
125
25
125
25
125
25
125
25
60
60
15
Rise time
19
ns
197
239
79
106
0,88
1,25
0,88
1,24
t d(off)
t f
Turn-off delay time
R goff = 16 Ω
R gon = 16 Ω
±15
600
15
Fall time
E on
Turn-on energy loss
mWs
E off
Turn-off energy loss
125
C ies
Input capacitance
1000
100
56
C oss
C rss
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
phase-change
material
R th(j-s)
K/W
Thermal resistance chip to heatsink
1,35
λ = 3,4 W/mK
Inverter FWD
25
125
25
125
25
125
25
125
25
125
25
1,35
1,90
1,91
13
2,05
V F
I RRM
Diode forward voltage
10
15
V
A
Peak reverse recovery current
Reverse recovery time
16
282
433
1,59
2,75
129
109
0,65
1,16
t rr
ns
Q rr
R gon = 16 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
600
µC
( di rf/dt )max
E rec
A/µs
mWs
125
phase-change
material
R th(j-s)
K/W
Thermal resistance chip to heatsink
1,83
λ = 3,4 W/mK
copyright Vincotech
3
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
or V CE
[V] or
I C [A]
or I F
[A] or
V GE [V]
or V GS
[V]
T j [°C]
Min
Max
V DS [V] I D [A]
Brake IGBT
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0003
25
5
5,8
6,3
V
V
25
125
1,58
1,87
2,22
2,07
8
0
1200
0
25
25
0,001
120
mA
nA
Ω
20
none
25
125
25
125
25
125
25
125
25
125
25
71
72
20
Rise time
24
ns
181
228
78
104
0,50
0,71
0,43
0,62
t d(off)
t f
Turn-off delay time
R goff = 32 Ω
R gon = 32 Ω
±15
600
8
Fall time
E on
Turn-on energy loss
mWs
E off
Turn-off energy loss
125
C ies
Input capacitance
490
50
C oss
C rss
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
30
phase-change
material
R th(j-s)
K/W
Thermal resistance chip to heatsink
1,57
λ = 3,4 W/mK
Brake FWD
25
125
1,67
1,61
V F
Diode forward voltage
7,5
V
ꢀA
I r
I RRM
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
25
250
25
125
25
125
25
125
25
125
25
125
9
10
A
258
427
0,90
0,90
78
73
0,35
0,69
t rr
ns
R gon = 32 Ω
R gon = 32 Ω
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
8
µC
( di rf/dt )max
E rec
A/µs
mWs
phase-change
material
R th(j-s)
K/W
Thermal resistance chip to heatsink
2,20
λ = 3,4 W/mK
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
100
25
25
25
25
22000
Ω
%
R 100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B (25/50)
Tol. ±1%
Tol. ±1%
3962
4000
B (25/100)
B-value
K
Vincotech NTC Reference
I
copyright Vincotech
4
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 1
Typical output characteristics
Inverter IGBT
Figure 2
Typical output characteristics
Inverter IGBT
I C = f(V CE
)
I C = f(V CE)
50
50
40
30
20
10
40
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V CE (V)
V CE (V)
At
At
t p
=
t p =
250
25
ꢀs
°C
250
125
ꢀs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Inverter IGBT
Figure 4
Inverter FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
16
14
12
10
8
30
25
20
15
10
6
Tj = Tjmax-25°C
4
Tj = Tjmax-25°C
5
Tj = 25°C
2
Tj = 25°C
0
0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
2
4
6
8
10
12
V GE (V)
V F (V)
At
At
t p
=
t p
=
250
10
ꢀs
V
250
ꢀs
V CE
=
copyright Vincotech
5
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 5
Inverter IGBT
Figure 6
Inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
3
2,5
2
2,5
Eon High T
Eon High T
2
Eoff High T
Eon Low T
Eoff High T
Eon Low T
Eoff Low T
1,5
1
1,5
1
Eoff Low T
0,5
0
0,5
0
0
5
10
15
20
25
30
0
20
40
60
80
I C (A)
R G (Ω)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
2255//112255
600
±15
16
2255//112255
600
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
15
V
=
I C =
Ω
Ω
A
=
16
Figure 7
Inverter FWD
Figure 8
Inverter FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
1,4
1,2
Erec
Erec
Tj = Tjmax -25°C
Tj = Tjmax -25°C
1,2
1
1
0,8
0,6
0,4
0,2
0
Erec
0,8
0,6
0,4
0,2
0
Tj = 25°C
Erec
Tj = 25°C
0
5
10
15
20
25
30
0
20
40
60
80
I C (A)
R G (Ω)
With an inductive load at
With an inductive load at
T j =
T j =
2255//112255
600
°C
V
2255//112255
600
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
±15
16
V
±15
15
V
=
I C =
Ω
A
copyright Vincotech
6
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 9
Inverter IGBT
Figure 10
Inverter IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
0,10
0,01
0,00
1,00
0,10
0,01
0,00
tdoff
tdoff
tdon
tf
tf
tdon
tr
tr
0
5
10
15
20
25
30
0
20
40
60
80
R G (Ω)
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
125
600
±15
16
°C
V
125
600
±15
15
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
16
Figure 11
Inverter FWD
Figure 12
Inverter FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon
)
0,6
0,8
trr
Tj = Tjmax -25°C
trr
Tj = Tjmax -25°C
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,4
0,2
trr
Tj = 25°C
trr
Tj = 25°C
0,0
0
10
20
30
40
50
60
R gon (Ω)
70
0
5
10
15
20
25
30
I C (A)
At
T j =
At
25/125
T j =
V R =
I F =
25/125
25/125
°C
25/125
°C
V CE
V GE
R gon
=
600
±15
16
V
V
Ω
600
15
V
A
V
=
=
V GE =
±15
copyright Vincotech
7
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 13
Inverter FWD
Figure 14
Inverter FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
4
3
2
1
0
3
Qrr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Qrr
2,5
2
Qrr
Tj = 25°C
1,5
1
Qrr
Tj = 25°C
0,5
0
0
0
5
10
15
20
25
30
20
40
60
80
I C (A)
R gon (Ω)
At
At
T j =
T j =
V R =
I F =
2255//112255
600
°C
V
2255//112255
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
15
A
=
V GE =
Ω
±15
V
Figure 15
Inverter FWD
Figure 16
Inverter FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
18
50
Tj = Tjmax -25°C
16
14
12
10
8
IRRM
40
30
20
Tj = 25°C
IRRM
Tj = Tjmax - 25°C
6
Tj = 25°C
4
10
0
IRRM
IRRM
2
0
0
5
10
15
20
25
30
0
20
40
60
80
I C (A)
R gon (Ω)
At
T j =
At
T j =
V R =
I F =
2255//112255
600
°C
2255//112255
600
°C
V
V CE
V GE
R gon
=
V
V
Ω
=
±15
16
15
A
=
V GE =
±15
V
copyright Vincotech
8
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 17
Inverter FWD
Figure 18
Inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
1600
1400
1200
1000
800
600
400
200
0
6000
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
R gon (Ω)
80
I C (A)
At
At
T j =
T j =
V R =
I F =
2255//112255
600
°C
V
2255//112255
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
15
A
=
V GE =
Ω
±15
V
Figure 19
Inverter IGBT
Figure 20
Inverter FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
10110
10-4
10-3
10-2
10-1
100
10
t p (s)
t p (s)
At
At
t
p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
1,35
K/W
1,83
K/W
IGBT thermal model values
R (K/W) Tau (s)
FWD thermal model values
R (K/W) Tau (s)
0,04
0,21
0,57
0,31
0,14
0,08
5,6E+00
8,7E-01
1,7E-01
3,4E-02
6,2E-03
5,5E-04
0,03
0,19
0,75
0,50
0,20
0,16
9,6E+00
8,2E-01
1,2E-01
2,6E-02
3,4E-03
3,8E-04
copyright Vincotech
9
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 21
Inverter IGBT
Figure 22
Inverter IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
150
125
100
75
30
25
20
15
10
5
50
25
0
0
0
50
100
150
200
0
50
100
150
200
T s (oC)
T s (oC)
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
Figure 23
Power dissipation as a
Inverter FWD
Figure 24
Forward current as a
Inverter FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
100
80
60
40
20
0
30
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
T s(oC)
T s (oC)
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
10
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 25
Inverter IGBT
Figure 26
Inverter IGBT
Safe operating area as a function
of collector-emitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
103
20
17,5
15
240 V
102
101
100
100uS
960 V
12,5
10
1mS
7,5
5
10mS
100mS
DC
2,5
0
10-1
100
103
104
101
102
0
25
50
75
100
125
V CE (V)
Q g (nC)
At
At
D =
single pulse
I C
=
15
A
T s =
80
ºC
V GE
=
±15
T jmax
V
T j =
ºC
Figure 27
Inverter IGBT
Figure 28
Inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
t sc = f(V GE
)
I sc = f(V GE)
17,5
150
15
12,5
10
125
100
75
7,5
5
50
25
2,5
0
0
12
13
14
15
16
17
12
14
16
18
20
V GE (V)
V GE (V)
At
At
V CE
=
1200
175
V
V CE
≤
1200
175
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
11
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Charateristics
Figure 29
Inverter IGBT
Reverse bias safe operating area
I C = f(V CE
)
35
IC MAX
30
25
20
15
10
5
0
0
200
400
600
800
1000
1200
1400
V CE (V)
At
T j =
T jmax-25
ºC
copyright Vincotech
12
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Brake Charateristics
Figure 1
Brake IGBT
Figure 2
Typical output characteristics
Brake IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
25
25
20
15
10
5
20
15
10
5
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
250
25
ꢀs
°C
250
125
ꢀs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Brake IGBT
Figure 4
Brake FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
9
30
25
20
15
10
7,5
6
4,5
3
Tj = Tjmax-25°C
Tj = Tjmax-25°C
5
1,5
Tj = 25°C
Tj = 25°C
0
0
0
0
0,5
1
1,5
2
2,5
3
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
t p
=
t p
=
250
10
ꢀs
V
250
ꢀs
V CE
=
copyright Vincotech
13
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Brake Charateristics
Figure 5
Brake IGBT
Figure 6
Brake IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
1,4
1,4
Eon
Eon
1,2
1,2
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Eoff
Eon
1
0,8
0,6
0,4
0,2
0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eoff
Eoff
Eoff
Tj = 25°C
Tj = 25°C
0
20
40
60
80
100
120
R G
140
Ω )
0
2
4
6
8
10
12
14
16
I C (A)
(
With an inductive load at
With an inductive load at
T j =
T j =
2255//112255
600
±15
32
°C
V
2255//112255
600
±15
8
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
32
Figure 7
Brake FWD
Figure 8
Brake FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,7
1
Erec
Erec
Tj = Tjmax -25°C
0,6
0,5
0,4
0,3
0,2
0,1
0
0,8
Tj = Tjmax - 25°C
0,6
Tj = 25°C
Erec
Erec
Tj = 25°C
0,4
0,2
0
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
16
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
T j =
T j =
2255//112255
600
°C
V
2255//112255
600
±15
8
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
±15
32
V
V
=
I C =
Ω
A
copyright Vincotech
14
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Brake Charateristics
Figure 9
Brake IGBT
Figure 10
Brake IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
0,10
0,01
0,00
1,00
0,10
0,01
0,00
tdoff
tdon
tdoff
tf
tf
tr
tdon
tr
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
R
G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
125
600
±15
32
°C
V
125
600
±15
8
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
32
Figure 11
Brake IGBT
Figure 12
Brake FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
10-1
10-1
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
101 10
10-5
10-4
10-3
10-2
10-1
100
101 10
10-5
10-4
10-3
10-2
10-1
100
t
p / T
t p / T
At
R th(j-s)
D =
At
R th(j-s)
D =
=
=
1,57
K/W
2,20
K/W
copyright Vincotech
15
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Brake Charateristics
Figure 13
Brake IGBT
Figure 14
Brake IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
125
100
75
50
25
0
25
20
15
10
5
0
200
T s
(
o C)
200
T s (
o C)
0
50
100
150
0
50
100
150
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
Figure 15
Power dissipation as a
Brake FWD
Figure 16
Forward current as a
Brake FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
70
60
50
40
30
20
10
0
12
10
8
6
4
2
0
o
0
25
50
75
100
125
150
C)
Ts (
o C)
150
Ts
(
0
25
50
75
100
125
At
At
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
16
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Rectifier Diode
Figure 1
Rectifier Diode
Figure 2
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
100
101
100
10-1
10-2
80
60
40
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
20
Tj = Tjmax-25°C
Tj = 25°C
0
0,0
0,5
1,0
1,5
2,0
t p (s)
V
F
(V)
10-5
10-4
10-3
10-2
10-1
100
10110
t
p / T
At
At
D =
t p
=
250
ꢀs
t p / T
D =
R th(j-s)
=
1,61
K/W
Figure 3
Power dissipation as a
Rectifier Diode
Figure 4
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
o C)
T h
(
o C)
T h
(
At
T j =
At
T j =
150
ºC
150
ºC
copyright Vincotech
17
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
copyright Vincotech
18
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
16 ꢀ
16 ꢀ
R gon
R goff
Inverter IGBT
Figure 2
Inverter IGBT
Figure 1
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
250
tdoff
%
%
VCE
IC
200
150
100
VCE 90%
VGE 90%
75
IC
VGE
VCE
100
50
VGE
tEoff
tdon
50
25
0
IC 1%
VCE 3%
VGE10%
IC10%
0
tEon
-50
-25
2,9
3
3,1
3,2
3,3
-0,2
0
0,2
0,4
0,6
0,8
time(us)
time (us)
V GE (0%) =
-15
15
V
V GE (0%) =
-15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
600
15
V
600
15
V
A
A
t doff
=
=
0,24
0,56
ꢀs
ꢀs
t don
=
=
0,06
0,25
ꢀs
ꢀs
t E off
t E on
Figure 3
Inverter IGBT
Figure 4
Inverter IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
250
VCE
fitted
%
%
IC
Ic
100
200
IC 90%
75
50
25
0
150
IC
60%
VCE
100
IC 40%
IC90%
tr
50
IC10%
IC10%
0
tf
-25
-50
0
0,1
0,2
0,3
0,4
0,5
0,6
2,9
3
3,1
3,2
3,3
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
600
15
V
V C (100%) =
I C (100%) =
t r =
600
15
V
A
A
0,11
ꢀs
0,02
ꢀs
copyright Vincotech
19
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Switching Definitions
Figure 5
Inverter IGBT
Figure 6
Inverter IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
200
%
%
Eoff
Pon
100
Poff
150
75
50
25
Eon
100
50
VCE
VGE 10%
3%
IC
1%
VGE 90%
0
tEon
0
tEoff
-50
-25
2,9
3
3,1
3,2
3,3
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
P off (100%) =
E off (100%) =
9,00
1,24
0,56
kW
mJ
ꢀs
P on (100%) =
E on (100%) =
9,00
1,25
0,25
kW
mJ
ꢀs
t E off
=
t E on =
Figure 7
Inverter FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
IRRM 10%
0
-50
-100
-150
IRRM 90%
IRRM 100%
2,8
3
3,2
3,4
3,6
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
600
15
V
A
-16
0,43
A
t rr
=
ꢀs
copyright Vincotech
20
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Inverter Switching Definitions
Figure 8
Inverter FWD
Figure 9
Inverter FWD
Turn-on Switching Waveforms & definition of t Qrr
Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
120
%
Erec
%
Id
Qrr
100
100
tQrr
80
tErec
50
0
60
40
Prec
-50
-100
-150
20
0
-20
2,8
3
3,2
3,4
3,6
3,8
4
3
3,2
3,4
3,6
3,8
4
4,2
time(us)
time(us)
I D (100%) =
Q rr (100%) =
15
A
P rec (100%) =
E rec (100%) =
9,00
1,16
0,90
kW
mJ
ꢀs
2,75
0,90
ꢀC
ꢀs
t Q rr
=
t E rec =
copyright Vincotech
21
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
V23990-P840-A48-PM
V23990-P840-C48-PM
V23990-P840-A49-PM
V23990-P840-C49-PM
with brake without thermal paste 12mm housing
without brake without thermal paste 12mm housing
with brake without thermal pastee 17mm housing
without brake without thermal paste 17mm housing
Name
Date code
UL & VIN
Lot
Serial
VIN WWYY
NNNNNNNVV UL
Text
NNNNNNNNNVV
WWYY
UL VIN
LLLLL
SSSS
LLLLL SSSS
Type&VerLot number Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table
Pinout variation
Pin
X
Y
Function
Modul subtype
Not assembled pins
P840-A4*
P840-C4*
-
1
2
25,5
25,5
2,7
0
NTC1
NTC2
4,5,20
3
4
22,8
20,1
16,2
13,5
10,8
8,1
5,4
2,7
0
0
0
-DC
BRCG
BRCE
G6
5
0
6
0
7
0
E6
8
0
G5
9
0
E5
10
11
12
13
14
15
16
17
0
G4
0
E4
0
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
15
G1
0
U
7,5
7,5
15
G2
V
G3
15
W
18 22,8
19 25,5
20 33,5
21 33,5
22 33,5
23 33,5
+INV
+DC
BRC+
L1
7,5
0
L2
L3
copyright Vincotech
22
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
Identification
Current
ID
Component
IGBT
Voltage
1200 V
1200 V
1200 V
1200 V
Function
Inverter Switch
Inverter Diode
Brake Switch
Brake Diode
Comment
T1, T2, T3, T4, T5, T6
15 A
D1, D2, D3, D4, D5, D6
FWD
15 A
T7
IGBT
8 A
D7
FWD
7,5 A
D8, D9, D10,
D11, D12, D13
NTC
Diode
NTC
1600 V
25 A
Rectifier
Thermistor
copyright Vincotech
23
19 Mar. 2016 / Revision 7
V23990-P840-*4*-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
135
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Document No.:
Date:
Modification:
New style, NTC changed
Pages
All
V23990-P840-*4*-PM-D7-14
19 Mar. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
24
19 Mar. 2016 / Revision 7
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