V23990-P849-A59Y-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P849-A59Y-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总20页 (文件大小：1393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
flowPIM0 3rd Gen
1200V/8A
Features
flow0 Housing
● 2 Clips housing in 12 and 17mm height
● Trench Fieldstop Technology IGBT4
● Enhenced Rectifier
● Optional w/o BRC
Target Applications
● Industrial Drives
Schematics
● Embedded Generation
Types
● V23990-P849-A58-PM 12mm height
● V23990-P849-A59-PM 17mm height
● V23990ꢀP849ꢀC58ꢀPM 12mm height; w/o BRC
● V23990ꢀP849ꢀC59ꢀPM 17mm height; w/o BRC
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Doide
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
VRRM
IFAV
1600
36
V
A
A
Th=80°C
Tc=80°C
DC current
tp=10ms
IFSM
370
Tj=25°C
I2t
A2s
W
I2t-value
680
43
Th=80°C
Tc=80°C
Ptot
Tj=Tjmax
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
Transistor Inverter
Collector-emitter voltage
DC collector current
VCE
IC
1200
13
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
Tj≤150°C
Tj=Tjmax
ICpuls
Ptot
VGE
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
24
44
A
Th=80°C
Tc=80°C
W
V
±20
tSC
Tj≤150°C
10
ꢁs
VCC
VGE=15V
800
V
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Diode Inverter
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
1200
16
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
IFRM
Ptot
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
20
36
A
Th=80°C
Tc=80°C
W
°C
Tjmax
175
Transistor BRC
VCE
IC
Collector-emitter voltage
DC collector current
1200
8
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
Icpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
12
32
A
Th=80°C
Tc=80°C
W
V
±20
tSC
Tj≤150°C
10
ꢁs
VCC
VGE=15V
800
V
Tjmax
Maximum Junction Temperature
175
°C
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
7
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
6
A
W
°C
Th=80°C
Tc=80°C
18
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Tjop
-40…+125
-40…+125
°C
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1
1,15
1,11
0,91
0,77
0,008
0,011
1,6
VF
Vto
rt
Forward voltage
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢂ
0,1
Ir
1600
mA
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
1,66
K/W
Transistor Inverter
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,35
0,05
200
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0003
8
V
V
1,6
1,87
2,20
0
1200
0
mA
nA
ꢂ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
71
23
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=32Ohm
Rgoff=32Ohm
236
108
0,75
15
600
8
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
pF
Eoff
0,62
490
Cies
Coss
Crss
QGate
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
30
53
pF
Reverse transfer capacitance
Gate charge
pF
Vcc=600V
±15
8
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,16
K/W
Diode Inverter
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,35
1,70
1,66
2,7
2,2
VF
Irm
Diode forward voltage
10
V
mA
A
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
IRRM
trr
10
383
1,57
69
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=32Ohm
15
10
uC
di(rec)max
/dt
A/ms
mWs
Erec
0,63
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,68
K/W
copyright Vincotech
3
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,00015
4
V
V
1,96
2,17
15
0,05
200
0
1200
0
mA
nA
ꢂ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
90
24
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=64Ohm
Rgoff=64Ohm
226
99
15
600
4
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
pF
0,34
Eoff
0,30
250
Cies
Coss
Crss
QGate
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
25
15
25
pF
Reverse transfer capacitance
Gate charge
pF
15
960
4
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,93
K/W
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,91
1,84
2,35
250
VF
Ir
4
mA
A
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
15
15
600
600
IRRM
trr
5
ns
446
0,76
40
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=64Ohm
4
uC
di(rec)max
/dt
A/ms
mWs
Erec
0,32
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,98
K/W
Thermistor
R25
Tol. ±13%
Tol. ±5%
Tj=25°C
19,1
22
24,9
k ꢂ
Rated resistance
R100
Tj=100°C
Tj=25°C
1411
1486
210
1560
ꢂ
Power dissipation given Epcos-Typ
B-value
P
mW
K
Tj=25°C
4000
B(25/100)
Tol. ±3%
copyright Vincotech
4
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
At
At
tp =
Tj =
tp =
Tj =
250
25
ꢁs
250
125
ꢁs
°C
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Output inverter IGBT
Figure 4
Output inverter FRED
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
Ic = f(VGE
)
125 oC
25 oC
25 oC
125 oC
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
5
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(Ic)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
600
±15
32
°C
V
125
600
±15
8
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢂ
ꢂ
32
Figure 7
Output inverter IGBT
Figure 8
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
600
±15
32
°C
V
125
600
±15
8
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢂ
ꢂ
32
copyright Vincotech
6
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Output Inverter
Figure 9
Output inverter FRED diode
Figure 10
Output inverter FRED diode
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Typical reverse recovery current as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
IRRM = f(Rgon)
At
At
Tj =
Tj =
125
600
8
°C
V
A
V
125
°C
V
A
V
VR
=
VR =
600
8
IF =
IF =
VGE
=
VGE =
±15
±15
Figure 11
Output inverter FRED diode
Figure 12
Typical rate of fall of forward
Output inverter FRED diode
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
and reverse recovery current as a
Qrr = f(Rgon
)
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
At
At
Tj =
Tj =
125
600
8
°C
V
A
V
125
600
8
°C
V
A
V
VR
=
VR =
IF =
IF =
VGE
VGE
=
=
±15
±15
copyright Vincotech
7
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Output Inverter
Figure 13
Figure 14
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
101
10-4
10-3
10-2
10-1
100
101
With
D =
With
tp / T
2,16
D =
tp / T
2,68
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FRED thermal model values
R (C/W)
0,05
Tau (s)
R (C/W)
0,05
Tau (s)
4,1E+00
5,5E-01
1,0E-01
1,9E-02
3,3E-03
4,0E-04
7,9E+00
7,3E-01
1,3E-01
2,5E-02
3,6E-03
4,3E-04
0,25
0,27
0,99
1,07
0,45
0,69
0,24
0,36
0,18
0,25
copyright Vincotech
8
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Output Inverter
Figure 15
Output inverter IGBT
Figure 16
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
At
At
Tj =
Tj =
VGE =
175
°C
175
15
°C
V
Figure 17
Power dissipation as a
Output inverter FRED
Figure 18
Forward current as a
Output inverter FRED
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Brake
Figure 1
Brake IGBT
Figure 2
Typical output characteristics
IC = f(VCE
Brake IGBT
Typical output characteristics
IC = f(VCE
)
)
At
At
tp =
Tj =
tp =
Tj =
250
25
ꢁs
250
125
ꢁs
°C
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Brake IGBT
Figure 4
Brake FRED
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
125 o
C
25 o
C
25 o
C
125 o
C
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
10
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Brake
Figure 5
Brake IGBT
Figure 6
Typical switching energy losses
Brake IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
as a function of gate resistor
E = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
600
±15
64
°C
V
125
600
±15
4
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
IC =
ꢂ
ꢂ
64
Figure 7
Brake IGBT
Figure 8
Brake IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
600
±15
64
°C
V
125
600
±15
4
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
IC =
ꢂ
ꢂ
64
copyright Vincotech
11
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Brake
Figure 9
Figure 10
IGBT transient thermal impedance
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp (s)
10-5
10-4
10-3
10-2
10-1
100
101
tp (s)
With
With
D =
D =
tp / T
2,93
tp / T
3,98
RthJH
=
RthJH
=
K/W
K/W
copyright Vincotech
12
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Brake
Figure 11
Brake IGBT
Figure 12
Collector current as a
Brake IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
function of heatsink temperature
IC = f(Th)
At
At
Tj =
Tj =
VGE
175
ºC
175
15
ºC
V
=
Figure 13
Power dissipation as a
Brake FRED
Figure 14
Forward current as a
Brake FRED
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
13
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Input Rectifier Bridge
Figure 1
Rectifier diode
Figure 2
Rectifier diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
25°C
125°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-5
10-4
10-3
10-2
10-1
100
1012
tp (s)
At
With
tp =
250
ꢁs
D =
tp / T
1,66
RthJH
=
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
14
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f (T)
copyright Vincotech
15
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
125,3 °C
32 Ω
Rgon
Rgoff
36 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
Ic
tdoff
Uce
Uce
Ic
Uge
tEoff
Uge
tEon
VGE (0%) =
VGE (0%) =
-15
15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
V
15
V
600
8
V
600
8
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,24
0,50
ꢁs
ꢁs
0,07
0,275
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
Ic
Uce
Ic
Uce
tr
tf
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
V
600
8
V
8
A
A
0,108
ꢁs
0,023
ꢁs
copyright Vincotech
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Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
4,93
0,62
0,50
kW
mJ
ꢁs
4,932
0,75
kW
mJ
ꢁs
tEoff
=
tEon =
0,275
Figure 7
Output inverter IGBT
Figure 8
Output inverter FRED
Gate voltage vs Gate charge
Turn-off Switching Waveforms & definition of trr
Id
fitted
Ud
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
15
600
8
V
600
8
V
V
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
V
-10
0,383
A
trr
=
A
ꢁs
61,714
nC
copyright Vincotech
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Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Switching Definitions Output Inverter
Figure 9
Output inverter FRED
Figure 10
Output inverter FRED
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
Erec
Id
Qrr
tErec
Prec
8
Id (100%) =
Prec (100%) =
Erec (100%) =
A
4,932
kW
mJ
ꢁs
Qrr (100%) =
1,569
ꢁC
ꢁs
0,634
0,80
tQint
=
tErec =
0,80
10-12 10-0-1212 -5 --55
-4 --44
-2 --22
--11
10-11100
00
-201
1
11
01-01-212101-21 --55
110010110010-5
0
-3-3
0-2--22
--11-1
0000
2111
110010-3
T
1=0130 C
1010101100
1010
10-130-3
101100
1010100
101100
10o1-40-4
1010
111000
10
111000
1100
111000
10
copyright Vincotech
18
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Package Outline and Pinout
Outline
Pinout
copyright Vincotech
19
Revision: 2
V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it
convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
20
Revision: 2
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