10TTS08 [VISHAY]
Phase Control SCR, 10 A; 相位控制可控硅， 10 A
| 型号： | 10TTS08 |
| 厂家： | 
VISHAY |
| 描述： | Phase Control SCR, 10 A |
| 文件： | 总6页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10TTS08 High Voltage Series
Vishay High Power Products
Phase Control SCR, 10 A
DESCRIPTION/FEATURES
2
(A)
The 10TTS08 High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
1 (K)
(G) 3
Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used with
Vishay HPP input diodes, switches and output rectifiers
which are available in identical package outlines.
TO-220AB
PRODUCT SUMMARY
Also available in SMD-220 package (series 10TTS08S).
VT at 6.5 A
< 1.15 V
140 A
This product has been designed and qualified for industrial
level.
ITSM
VRRM
800 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
13.5
17
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
6.5
UNITS
IT(AV)
Sinusoidal waveform
A
IT(RMS)
VRRM/VDRM
ITSM
10
800
V
A
140
VT
6.5 A, TJ = 25 °C
1.15
V
dV/dt
150
V/µs
A/µs
°C
dI/dt
100
TJ
Range
- 40 to 125
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
mA
10TTS08
800
800
1.0
Document Number: 93690
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
10TTS08 High Voltage Series
Phase Control SCR, 10 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
6.5
UNITS
Maximum average on-state current
Maximum RMS on-state current
IT(AV)
TC = 112 °C, 180° conduction half sine wave
IT(RMS)
10
A
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C
6.5 A, TJ = 25 °C
120
140
72
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
A2s
100
1000
1.15
17.3
0.85
0.05
1.0
Maximum I2√t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I2√t
VTM
rt
A2√s
V
mΩ
V
TJ = 125 °C
TJ = 25 °C
VT(TO)
Maximum reverse and direct leakage current
IRM/IDM
VR = Rated VRRM/VDRM
TJ = 125 °C
mA
Typical holding current
IH
IL
Anode supply = 6 V, resistive load, initial IT = 1 A
Anode supply = 6 V, resistive load
TJ = 25 °C
30
Maximum latching current
50
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
dV/dt
dI/dt
150
100
V/µs
A/µs
TRIGGERING
TEST CONDITIONS
PARAMETER
SYMBOL
PGM
VALUES
8.0
2.0
1.5
10
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
W
PG(AV)
+IGM
A
V
-VGM
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Maximum required DC gate current to trigger
IGT
15
mA
10
1.2
1
Maximum required DC gate
voltage to trigger
VGT
V
0.7
0.2
0.1
VGD
IGD
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
TJ = 125 °C, VDRM = Rated value
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
tgt
trr
tq
TJ = 25 °C
0.8
3
µs
TJ = 125 °C
100
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93690
Revision: 19-Jun-08
10TTS08 High Voltage Series
Phase Control SCR, 10 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
1.5
62
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.5
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Case style TO-220AC
10TTS08
125
120
8
10TTS08
(DC) = 1.5 K/W
180°
R
7
thJC
120°
90°
60°
30°
6
5
4
3
2
1
0
Conduction Angle
RM S Lim it
115
30°
60°
Conduction Angle
10TTS08
90°
110
105
120°
180°
T = 125°C
J
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
125
120
115
110
105
12
10TTS08
thJC
DC
180°
120°
90°
R
(DC) = 1.5 K/W
10
8
60°
30°
Conduction Period
6
RMS Lim it
30°
4
Conduction Period
10TTS08
60°
4
90°
120°
2
T = 1 25 ° C
J
180°
DC
0
0
2
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
4
6
8
10
12
0
2
6
8
10
12
Average On-state Current (A)
Fig. 2 - Current Rating Characteristic
Document Number: 93690
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
10TTS08 High Voltage Series
Phase Control SCR, 10 A
Vishay High Power Products
150
140
130
120
110
100
90
130
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Rated V
Applied Following Surge.
RRM
120
110
100
90
Initial T = 125°C
Of Conduction May Not Be Maintained.
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
80
80
70
70
10TTS08
10TTS08
60
50
60
0.01
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
10TTS08
100
10
1
T = 25°C
J
T = 125° C
J
0.5
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
2
2.5
3
3.5
10
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
Sin g le Pu lse
10TTS08
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
0.1
1
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93690
Revision: 19-Jun-08
10TTS08 High Voltage Series
Phase Control SCR, 10 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
10
T
T
S
08
-
1
2
3
4
5
6
1
2
-
-
Current rating
Circuit configuration:
T = Single thyristor
Package:
-
-
3
4
T = TO-220AC
Type of silicon:
S = Converter grade
5
6
-
-
Voltage code x 100 = VRRM
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95222
http://www.vishay.com/doc?95225
Part marking information
Document Number: 93690
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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