15ETX06PBF_12 [VISHAY]
Hyperfast Rectifier, 15 A FRED Pt?; 超快整流器， 15 A FRED铂？
| 型号： | 15ETX06PBF_12 |
| 厂家： | 
VISHAY |
| 描述： | Hyperfast Rectifier, 15 A FRED Pt? |
| 文件： | 总9页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Benchmark ultralow forward voltage drop
• Low leakage current
TO-220AC
TO-220 FULL-PAK
Base
cathode
2
• Fully isolated package (VINS = 2500 VRMS
)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
1
1
3
3
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
Cathode
Cathode
Anode
Anode
VS-15ETX06PbF
VS-15ETX06-N3
VS-15ETX06FPPbF
VS-15ETX06FP-N3
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
Package
TO-220AC, TO-220FP
IF(AV)
15 A
600 V
VR
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VF at IF
3.2 V
trr typ.
18 ns
TJ max.
Diode variation
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
600
V
TC = 133 °C
Average rectified forward current
IF(AV)
15
TC = 62 °C (FULL-PAK)
TJ = 25 °C
A
Non-repetitive peak surge current
Peak repetitive forward current
IFSM
IFM
170
30
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 15 A
600
-
-
V
-
-
-
-
-
-
2.3
1.5
0.1
40
3.2
1.8
50
300
-
Forward voltage
VF
IR
IF = 15 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
20
pF
Measured lead to lead 5 mm from package body
8.0
-
nH
Revision: 02-Jan-11
Document Number: 94006
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
-
-
-
18
22
32
-
20
Reverse recovery time
trr
ns
22
TJ = 125 °C
52
-
IF = 15 A
TJ = 25 °C
2.4
5.1
25
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
A
-
V
R = 390 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
C
TJ = 125 °C
150
37
-
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
-
ns
A
IF = 15 A
IRRM
Qrr
TJ = 125 °C
dIF/dt = 800 A/μs
16
-
V
R = 390 V
350
-
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 65
-
175
°C
-
-
1.0
3.0
1.3
3.5
Thermal resistance,
junction to case
RthJC
(FULL-PAK)
Thermal resistance,
junction to ambient per leg
°C/W
RthJA
RthCS
Typical socket mount
-
-
-
70
-
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
15ETX06
15ETX06FP
Case style TO-220 FULL-PAK
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
100
10
1
0.1
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
TJ = 25 °C
0.01
0.001
0.0001
1
2
3
0
0.5
1
1.5
2.5
3.5
4
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-11
Document Number: 94006
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
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Vishay Semiconductors
1000
100
TJ = 25 °C
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
t2
0.1
0.01
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/t2
Single pulse
(thermal resistance)
.
2. Peak TJ = PDM x ZthJC + TC
.
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
0.01
t2
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
.
0.00001
0.0001
0.001
0.01
0.1
1
100
10
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
Revision: 02-Jan-11
Document Number: 94006
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
40
35
30
180
170
160
150
140
130
120
110
RMS limit
25
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
20
15
10
5
Square wave (D = 0.50)
Rated VR applied
DC
See note (1)
0
0
5
10
15
20
25
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Forward Power Loss Characteristics
70
50
30
200
VR = 390 V
TJ = 125 °C
TJ = 25 °C
150
100
IF = 30 A
IF = 15 A
DC
Square wave (D = 0.50)
Rated VR applied
IF = 30 A
50
0
IF = 15 A
1000
See note (1)
10
100
0
5
10
15
20
25
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
450
VR = 390 V
400
TJ = 125 °C
TJ = 25 °C
350
300
250
IF = 30 A
200
IF = 15 A
150
100
50
0
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 02-Jan-11
Document Number: 94006
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 02-Jan-11
Document Number: 94006
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
X
06
FP PbF
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (15 = 15 A)
E = Single diode
2
3
4
5
6
7
T = TO-220, D2PAK
X = Hyperfast recovery
Voltage rating (06 = 600 V)
None = TO-220AC
FP = TO-220 FULL-PAK
Environmental digit:
-
8
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-15ETX06PbF
VS-15ETX06-N3
VS-15ETX06FPPbF
VS-15ETX06FP-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
50
50
50
50
1000
1000
1000
1000
LINKS TO RELATED DOCUMENTS
TO-220AC
www.vishay.com/doc?95221
Dimensions
TO-220FP
www.vishay.com/doc?95005
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95009
www.vishay.com/doc?95440
TO-220ACPbF
TO-220AC-N3
Part marking information
TO-220AFPPbF
TO-220FP-N3
Revision: 02-Jan-11
Document Number: 94006
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters
1ꢀ06
1ꢀ04
304
301
Hole Ø
208
206
307
302
7031
6091
160ꢀ
1508
1604
1504
1ꢀ°
303
301
13056
130ꢀ5
ꢀ09
ꢀ07
ꢀ061
ꢀ038
1015
10ꢀ5
2054 TYP0
TYP0
104
103
2054 TYP0
2085
2065
R ꢀ07
R ꢀ05
(2 places)
Lead assignments
Diodes
408
406
1 + 2 - Cathode
3 - Anode
5° ꢀ05°
5° ꢀ05°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
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www.vishay.com
1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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