181RKI400PBF [VISHAY]
Silicon Controlled Rectifier, 285A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, ROHS COMPLIANT, GLASS PACKAGE-3;
| 型号： | 181RKI400PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 285A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, ROHS COMPLIANT, GLASS PACKAGE-3 |
| 文件： | 总7页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
180RKI...PbF, 181RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 180 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AB (TO-93)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TO-209AB (TO-93)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
• Controlled DC power supplies
• AC controllers
IT(AV)
180 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
180
UNITS
A
IT(AV)
TC
80
°C
IT(RMS)
285
50 Hz
60 Hz
50 Hz
60 Hz
3800
A
ITSM
4000
72
I2t
kA2s
66
V
DRM/VRRM
400 to 1000
100
V
tq
Typical
μs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
PART NUMBER
PEAK AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
40
80
400
800
500
900
180RKI
181RKI
30
100
1000
1100
Document Number: 94382
Revision: 03-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
180RKI...PbF, 181RKI...PbF Series
Phase Control Thyristors
(Stud Version), 180 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
IRMS
TEST CONDITIONS
VALUES
180
UNITS
A
Maximum average on-state current
at case temperature
180° conduction, half sine wave
80
°C
Maximum RMS on-state current
DC at 79 °C case temperature
285
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
3800
4000
3500
3660
72
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
intial TJ = TJ maximum
No voltage
reapplied
66
Maximum I2t for fusing
I2t
kA2s
61
100 % VRRM
reapplied
56
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
720
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
0.83
0.89
0.92
0.81
1.35
600
V
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
V
rt2
VTM
IH
Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse
Maximum holding current
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 μs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
300
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
td
tq
1.0
μs
ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/μs,
VR = 100 V, dV/dt = 20 V/μs
Typical turn-off time
100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of
rise of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum rated VDRM/VRRM applied
30
mA
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94382
Revision: 03-Nov-09
180RKI...PbF, 181RKI...PbF Series
Phase Control Thyristors
(Stud Version), 180 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
130
65
-
150
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
35
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.0
1.2
0.9
-
VGT
2.5
-
Maximum gate current/voltage not
to trigger is the maximum value
TJ = TJ maximum which will not trigger any unit with
rated VDRM anode to cathode
applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.15
UNITS
Maximum operating junction
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
junction to ambient
RthCS
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31
(275)
N · m
(lbf · in)
Mounting force, 10 %
24.5
(210)
Lubricated threads
Approximate weight
Case style
280
g
See dimensions - link at the end of datasheet
TO-209AB (TO-93)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.050
0.063
0.080
0.118
0.225
0.032
0.059
0.082
0.124
0.228
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94382
Revision: 03-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
3
180RKI...PbF, 181RKI...PbF Series
Phase Control Thyristors
(Stud Version), 180 A
Vishay High Power Products
130
130
RthJC (DC) = 0.15 K/W
RthJC (DC) = 0.15 K/W
120
110
120
110
100
90
Ø
Ø
Conduction period
Conduction angle
100
90
30°
DC
80
80
30°
60°
120°
60°
120°
180°
200
90°
180°
90°
150
70
70
0
50
100
250
300
0
20 40 60 80 100 120 140 160 180 200
94382_02
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
94382_01
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
240
240
220
200
180
160
140
120
100
80
220
200
180
160
140
120
100
80
180°
120°
90°
60°
30°
RMS limit
60
60
Ø
40
Conduction angle
40
20
20
TJ = 125 °C
0
0
0
20 40 60 80 100 120 140 160 180
0
25
50
75
100
125
94382_03a
Average On-State Current (A)
94382_03b
Maximum Allowable
Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
350
300
250
200
150
100
50
350
300
250
DC
180°
120°
90°
60°
30°
RMS limit
200
150
100
50
Ø
Conduction period
TJ = 125 °C
0
0
0
50
100
150
200
250
300
0
25
50
75
100
125
94382_04a
Average On-State Current (A)
94382_04b
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions, contact: indmodules@vishay.com
Document Number: 94382
Revision: 03-Nov-09
180RKI...PbF, 181RKI...PbF Series
Phase Control Thyristors
(Stud Version), 180 A
Vishay High Power Products
4000
3500
3000
2500
2000
1500
4000
3500
3000
2500
2000
1500
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated VRRM reapplied
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half
Pulse Train Duration (s)
94382_05
94382_06
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
TJ = 25 °C
1000
TJ = 125 °C
100
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On-State Voltage (V)
94382_07
Fig. 7 - On-State Voltage Drop Characteristics
1
0.1
Steady state value
RthJC = 0.15 K/W
(DC operation)
0.01
0.001
0.001
0.01
0.1
1
10
94382_08
Square Wave Pulse Duration (s)
Fig. 8 - Thermal impedance ZthJC Characteristics
Document Number: 94382
Revision: 03-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
5
180RKI...PbF, 181RKI...PbF Series
Phase Control Thyristors
(Stud Version), 180 A
Vishay High Power Products
100
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
(4) PGM = 200 W, tp = 300 μs
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
tr ≤ 0.5 μs, tp ≥ 6 μs
(b)
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
tr ≤ 1 μs, tp ≥ 6 μs
10
(a)
1
(1)
(2)
(3)
(4)
VGD
Frequency limited by PG(AV)
IGD
0.01
0.1
0.001
0.1
1
10
100
1000
94382_09
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
18
1
RKI 100 PbF
1
2
3
4
5
1
2
-
-
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
Thyristor
3
4
5
-
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95077
www.vishay.com
6
For technical questions, contact: indmodules@vishay.com
Document Number: 94382
Revision: 03-Nov-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
181RKI40S90
Silicon Controlled Rectifier, 285A I(T)RMS, 400000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB
INFINEON
181RKI40S90PBF
Silicon Controlled Rectifier, 285A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB
INFINEON
181RKI60
Silicon Controlled Rectifier, 285A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AB
INFINEON
181RKI60PBF
Silicon Controlled Rectifier, 285A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AB
INFINEON
181RKI800
Silicon Controlled Rectifier, 285A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, GLASS PACKAGE-3
VISHAY
181RKI80S90
Silicon Controlled Rectifier, 285A I(T)RMS, 180000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB
INFINEON
181RKI80S90PBF
Silicon Controlled Rectifier, 285A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB
INFINEON
©2020 ICPDF网 联系我们和版权申明