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1N1184

更新时间：2024-09-18 07:42:53

品牌：VISHAY

描述：Power Silicon Rectifier Diodes, 35 A/40 A/60 A

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概述
规格参数
数据手册
替代型号

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1N1184 概述

Power Silicon Rectifier Diodes, 35 A/40 A/60 A 电源硅整流二极管， 35 A / 40 A / 60 A TVS二极管整流二极管

1N1184 规格参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-5
包装说明：	O-MUPM-D1	针数：	1
Reach Compliance Code：	compliant	HTS代码：	8541.10.00.80
Factory Lead Time：	18 weeks	风险等级：	5.17
其他特性：	HIGH RELIABILITY, LOW LEAKAGE CURRENT	应用：	HIGH POWER
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.7 V	JEDEC-95代码：	DO-203AB
JESD-30 代码：	O-MUPM-D1	最大非重复峰值正向电流：	595 A
元件数量：	1	相数：	1
端子数量：	1	最高工作温度：	200 °C
最低工作温度：	-65 °C	最大输出电流：	35 A
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	POST/STUD MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大重复峰值反向电压：	100 V
子类别：	Rectifier Diodes	表面贴装：	NO
端子形式：	SOLDER LUG	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N1184 数据手册

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1N1183, 1N3765, 1N1183A, 1N2128A Series

Vishay High Power Products

Power Silicon Rectifier Diodes,

35 A/40 A/60 A

DESCRIPTION/FEATURES

• Low leakage current series

RoHS

• Good surge current capability up to 1000 A

COMPLIANT

• Can be supplied to meet stringent military, aerospace and

other high reliability requirements

• RoHS compliant

DO-203AB (DO-5)

PRODUCT SUMMARY

I_F(AV)

35 A/40 A/60 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

1N1183

35 ⁽¹⁾

140 ⁽¹⁾

480

500 ⁽¹⁾

1N3765

35 ⁽¹⁾

140 ⁽¹⁾

1N1183A

40 ⁽¹⁾

150 ⁽¹⁾

1N2128A

60 ⁽¹⁾

140 ⁽¹⁾

UNITS

I_F(AV)

T_C

°C

50 Hz

60 Hz

50 Hz

60 Hz

380

765

860

I_FSM

I²t

400 ⁽¹⁾

730

800 ⁽¹⁾

2900

900 ⁽¹⁾

3700

1140

A²s

1040

670

2650

3400

I²√t

16 100

50 to 600 ⁽¹⁾

10 300

700 to 1000 ⁽¹⁾

41 000

50 to 600 ⁽¹⁾

52 500

50 to 600 ⁽¹⁾

A²√s

V_RRM

Range

Note

(1)

JEDEC registered values

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V_RRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V_RM, MAXIMUM DIRECT

REVERSE VOLTAGE

TYPE NUMBER ⁽³⁾

T_J= - 65 °C TO 200 °C ⁽²⁾

1N1183

1N1184

1N1185

1N1186

1N1187

1N1188

1N1189

1N1190

1N3765

1N3766

1N3767

1N3768

1N1183A

1N1184A

1N1185A

1N1186A

1N1187A

1N1188A

1N1189A

1N1190A

1N2128A

50 ⁽¹⁾

100 ⁽¹⁾

150 ⁽¹⁾

200 ⁽¹⁾

300 ⁽¹⁾

400 ⁽¹⁾

500 ⁽¹⁾

600 ⁽¹⁾

700 ⁽¹⁾

800 ⁽¹⁾

900 ⁽¹⁾

1000 ⁽¹⁾

50 ⁽¹⁾

100 ⁽¹⁾

150 ⁽¹⁾

200 ⁽¹⁾

300 ⁽¹⁾

400 ⁽¹⁾

500 ⁽¹⁾

600 ⁽¹⁾

700 ⁽¹⁾

800 ⁽¹⁾

900 ⁽¹⁾

1000 ⁽¹⁾

1N2129A

1N2130A

1N2131A

1N2133A

1N2135A

1N2137A

1N2138A

Notes

(1)

(2)

(3)

JEDEC registered values

For 1N1183 Series and 1N3765 Series T_C= - 65 to 190 °C

Basic part number indicates cathode to case. For anode to case, add “R” to part number, i.e., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA

Document Number: 93492

Revision: 24-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

1N1183, 1N3765, 1N1183A, 1N2128A Series

Power Silicon Rectifier Diodes,

Vishay High Power Products

35 A/40 A/60 A

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

1-phase operation,

1N1183 1N3765 1N1183A 1N2128A UNITS

35 ⁽¹⁾

40 ⁽¹⁾

60 ⁽¹⁾

Maximumaverageforwardcurrent

at case temperature

I_F(AV)

140 ⁽¹⁾

150 ⁽¹⁾

140 ⁽¹⁾

°C

180° sinusoidal conduction

Half cycle 50 Hz

sine wave or 6 ms

rectangular pulse

Following any

rated load

condition and

with rated

480

500 ⁽¹⁾

570

380

400 ⁽¹⁾

455

765

800 ⁽¹⁾

910

860

900 ⁽¹⁾

1000

1050

Half cycle 60 Hz

sine wave or 5 ms

rectangular pulse

_RRMapplied

Maximum peak one cycle

non-repetitive surge current

I_FSM

Half cycle 50 Hz

sine wave or 6 ms

rectangular pulse

Following any

rated load

condition and

with ½ V_RRM

applied following

surge = 0

Half cycle 60 Hz

sine wave or 5 ms

rectangular pulse

595

475

950

With rated V_RRM

applied following

surge, initial

t = 10 ms

t = 8.3 ms

t = 10 ms

1140

1040

1610

1470

730

670

2900

2650

3700

3400

Maximum I²t for fusing

T_J= T_Jmaximum

I²t

A²s

With V_RRM= 0

following surge,

initial T_J=

1030

940

4150

5250

Maximum I²t for individual

device fusing

t = 8.3 ms

3750

4750

T_Jmaximum

Maximum I²√t for individual

device fusing

t = 0.1 to 10 ms,

I²√t ⁽²⁾

16 100 10 300

41 500

52 500

A²√s

_RRM= 0 following surge

1.7 ⁽¹⁾

1.8 ⁽¹⁾

110

1.3 ⁽¹⁾

Maximum peak forward voltage

at maximum forward current (I_FM

V_FM

T_J= 25 °C

)

110

126

188

V_RRM= 700

V_RRM= 800

V_RRM= 900

5.0 ⁽¹⁾

4.0 ⁽¹⁾

3.0 ⁽¹⁾

2.0 ⁽¹⁾

Maximum rated I_F(AV)and T_C

Maximum average

reverse current

I_R(AV)

_RRM= 1000

Maximum rated I_F(AV), V_RRMand T_C

10 ⁽¹⁾

2.5 ⁽¹⁾

10 ⁽¹⁾

Notes

(1)

JEDEC registered values

I²t for time t_x= I²√t x √t_x

(2)

www.vishay.com

For technical questions, contact: ind-modules@vishay.com

Document Number: 93492

Revision: 24-Jun-08

1N1183, 1N3765, 1N1183A, 1N2128A Series

Power Silicon Rectifier Diodes,

Vishay High Power Products

35 A/40 A/60 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

1N1183

1N3765

1N1183A 1N2128A

UNITS

Maximum operating

case temperature range

T_C

- 65 to 190 ⁽¹⁾

- 65 to 200

°C

Maximum storage

temperature range

T_Stg

R_thJC

R_thCS

- 65 to 175 ⁽¹⁾

1.00 ⁽¹⁾

- 65 to 200

Maximum internal thermal

resistance, junction to case

DC operation

1.1 ⁽¹⁾

0.65 ⁽¹⁾

°C/W

Thermal resistance,

case to sink

Mounting surface, smooth, flat

and greased

0.25

minimum

maximum

2.3 (20)

3.4 (30)

N · m

(lbf · in)

Mounting torque

Non-lubricated threads

Approximate weight

Case style

0.6

oz.

JEDEC

DO-203AB (DO-5)

Note

(1)

JEDEC registered values

Fig. 1 - Maximum Allowable Case Temperature vs.

Average Forward Current, 1N1183 and 1N3765 Series

Fig. 3 - Typical High Level Forward Power Loss vs.

Average Forward Current (Sinusoidal Current Waveform),

1N1183 and 1N3765 Series

Fig. 2 - Typical Low Level Forward Power Loss vs.

Average Forward Current (Sinusoidal Current Waveform),

1N1183 and 1N3765 Series

Fig. 4 - Typical Forward Voltage vs. Forward Current,

1N1183 and 1N3765 Series

Document Number: 93492

Revision: 24-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

1N1183, 1N3765, 1N1183A, 1N2128A Series

Power Silicon Rectifier Diodes,

Vishay High Power Products

35 A/40 A/60 A

Fig. 5 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 1N1183 and 1N3765 Series

Fig. 8 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 1N1183A Series

Fig. 6 - Average Forward Current vs. Maximum Allowable

Case Temperature, 1N1183A Series

Fig. 9 - Maximum Forward Voltage vs. Forward Current,

1N1183A Series

Fig. 7 - Maximum Low Level Forward Power Loss vs.

Average Forward Current, 1N1183A Series

Fig. 10 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 1N1183A Series

www.vishay.com

For technical questions, contact: ind-modules@vishay.com

Document Number: 93492

Revision: 24-Jun-08

1N1183, 1N3765, 1N1183A, 1N2128A Series

Power Silicon Rectifier Diodes,

Vishay High Power Products

35 A/40 A/60 A

Fig. 11 - Maximum Non-Repetitive Surge Current vs.

Fig. 13 - Maximum Low Level Forward Power Loss vs.

Average Forward Current, 1N2128A Series

Number of Current Pulses, 1N2128A Series

Fig. 12 - Maximum Allowable Case Temperature vs.

Average Forward Current, 1N2128A Series

Fig. 14 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 1N2128A Series

Fig. 15 - Maximum Forward Voltage vs. Forward Current,

1N2128A Series

LINKS TO RELATED DOCUMENTS

Dimensions

http://www.vishay.com/doc?95360

Document Number: 93492

Revision: 24-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

1N1184 替代型号

型号	制造商	描述	替代类型	文档
1N1192A	MICROSEMI	SILICON POWER RECTIFIER	功能相似
40HF10	VISHAY	Standard Recovery Diodes, (Stud Version), 40 A	功能相似

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