1N1203APBF [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;
1N1203APBF
型号: 1N1203APBF
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

整流二极管
文件: 总5页 (文件大小:140K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N1...A, 1N36..A Series  
Vishay High Power Products  
Medium Power  
Silicon Rectifier Diodes, 12 A  
FEATURES  
• Voltage ratings from 50 to 1000 V  
RoHS  
• High surge capability  
• Low thermal impedance  
• High temperature rating  
COMPLIANT  
• Can be supplied as JAN and JAN-TX devices in  
accordance with MIL-S-19500/260  
DO-203AA (DO-4)  
• RoHS compliant  
PRODUCT SUMMARY  
IF(AV)  
12 A  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
12 (1)  
150 (1)  
UNITS  
A
IF(AV)  
TC  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
230  
240 (1)  
IFSM  
I2t  
A
260  
A2s  
240  
TC  
- 65 to 200  
50 to 1000 (1)  
°C  
V
VRRM  
Range  
Note  
(1)  
JEDEC registered values  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
REPETITIVE PEAK  
REVERSE VOLTAGE  
V
V
RSM, MAXIMUM  
V
R(RMS), MAXIMUM RMS  
REVERSE VOLTAGE  
V
V
RM, MAXIMUM DIRECT  
REVERSE VOLTAGE  
V
NON-REPETITIVE PEAK  
REVERSE VOLTAGE  
V
TYPE NUMBER (2)  
T
C = - 65 °C TO 200 °C  
TC = - 65 °C TO 200 °C  
TC = - 65 °C TO 200 °C  
100 (1)  
TC = - 65 °C TO 200 °C  
50 (1)  
1N1199A  
1N1200A  
1N1201A  
1N1202A  
1N1203A  
1N1204A  
1N1205A  
1N1206A  
1N3670A  
1N3671A  
1N3672A  
1N3673A  
50 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
35 (1)  
70 (1)  
105 (1)  
140 (1)  
210 (1)  
280 (1)  
350 (1)  
420 (1)  
490  
200 (1)  
300 (1)  
350 (1)  
450 (1)  
600 (1)  
700 (1)  
800 (1)  
900 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
700 (1)  
700 (1)  
800 (1)  
900 (1)  
1000 (1)  
560  
1000 (1)  
1100 (1)  
1200 (1)  
800 (1)  
900 (1)  
1000 (1)  
630  
700  
Notes  
(1)  
JEDEC registered values  
Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA  
(2)  
Document Number: 93493  
Revision: 24-Jun-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1
1N1...A, 1N36..A Series  
Medium Power  
Silicon Rectifier Diodes, 12 A  
Vishay High Power Products  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
180° sinusoidal conduction  
VALUES  
12 (1)  
UNITS  
A
Maximum average forward current  
at case temperature  
IF(AV)  
150 (1)  
°C  
Half cycle 50 Hz sine wave  
or 6 ms rectangular pulse  
230  
240 (1)  
275  
Following any rated load  
condition and with rated  
VRRM applied  
Half cycle 60 Hz sine wave  
or 5 ms rectangular pulse  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
A
Half cycle 50 Hz sine wave  
or 6 ms rectangular pulse  
Following any rated load  
condition and with VRRM  
applied following surge = 0  
Half cycle 60 Hz sine wave  
or 5 ms rectangular pulse  
285  
With rated VRRM applied  
following surge,  
initial TJ = 200 °C  
t = 10 ms  
t = 8.3 ms  
260  
240  
Maximum I2t for fusing  
I2t  
A2s  
Maximum I2t for individual  
device fusing  
With VRRM = 0 following  
surge, initial TJ = 200 °C  
t = 10 ms  
t = 8.3 ms  
370  
340  
Maximum I2t for individual  
device fusing  
I2t (2)  
t = 0.1 to 10 ms, VRRM = 0 following surge  
IF(AV) = 12 A (38 A peak), TC = 25 °C  
3715  
A2s  
Maximum forward voltage drop  
VRRM = 50  
VFM  
1.35 (1)  
3.0 (1)  
2.5 (1)  
2.25 (1)  
2.0 (1)  
1.75 (1)  
1.5 (1)  
1.25 (1)  
1.0 (1)  
0.9 (1)  
0.8 (1)  
0.7 (1)  
0.6 (1)  
V
VRRM = 100  
VRRM = 150  
VRRM = 200  
VRRM = 300  
VRRM = 400  
VRRM = 500  
VRRM = 600  
VRRM = 700  
VRRM = 800  
VRRM = 900  
VRRM = 1000  
Maximum average  
reverse current  
(3)  
IR(AV)  
Maximum rated IF(AV) and TC  
mA  
Notes  
(1)  
(2)  
(3)  
JEDEC registered values  
I2t for time tx = I2t x tx  
Maximum peak reverse current (IRM) under same conditions 2 x rated IR(AV)  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93493  
Revision: 24-Jun-08  
1N1...A, 1N36..A Series  
Medium Power  
Silicon Rectifier Diodes, 12 A  
Vishay High Power Products  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum operating case and  
storage temperature range  
TC, TStg  
- 65 to 200 (1)  
°C  
Maximum internal thermal  
resistance, junction to case  
RthJC  
DC operation  
2.0 (1)  
0.5  
°C/W  
Thermal resistance,  
case to sink  
RthCS  
Mounting surface, smooth, flat and greased  
Torque applied to nut; non-lubricated threads  
minimum  
1.36 (12)  
1.69 (15)  
1.07 (9.45)  
1.30 (11.55)  
1.17 (10.35)  
1.43 (12.65)  
7.0  
maximum  
minimum  
maximum  
minimum  
maximum  
N · m  
(lbf · in)  
Mounting torque  
Torque applied to nut; lubricated threads  
Torque applied to device case; lubricated threads  
g
Approximate weight  
Case style  
0.25  
oz.  
JEDEC  
DO-203AA (DO-4)  
Note  
(1)  
JEDEC registered values  
Document Number: 93493  
Revision: 24-Jun-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3
1N1...A, 1N36..A Series  
Medium Power  
Silicon Rectifier Diodes, 12 A  
Vishay High Power Products  
Fig. 1 - Average Forward Current vs.  
Maximum Allowable Case Temperature  
Fig. 4 - Maximum Forward Voltage vs. Forward Current  
Fig. 2 - Maximum Low Level Forward Power Loss vs.  
Average Forward Current  
Fig. 5 - Maximum Transient Thermal Impedance,  
Junction to Case vs. Pulse Duration  
Fig. 3 - Maximum High Level Forward Power Loss vs.  
Average Forward Current  
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.  
Number of Current Pulses  
LINKS TO RELATED DOCUMENTS  
http://www.vishay.com/doc?95311  
Dimensions  
www.vishay.com  
4
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93493  
Revision: 24-Jun-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

相关型号:

1N1203AR

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VISHAY

1N1203ARHR

Rectifier Diode
DIGITRON

1N1203ARPBF

暂无描述
VISHAY

1N1203ARPBF

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA,
INFINEON

1N1203B

Silicon Power Rectifier
MICROSEMI

1N1203BE3

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, GLASS METAL, DO203AA(DO4), 1 PIN
MICROSEMI

1N1203BR

Rectifier, Standard Recovery; Max Peak Repetitive Reverse Voltage: 12; Max TMS Bridge Input Voltage: 300; Max DC Reverse Voltage: 10; Package: DO-4R
DIGITRON

1N1203BR-PBF

Rectifier Diode
DIGITRON

1N1203BRHR

Rectifier Diode
DIGITRON

1N1203C

SILICON POWER RECTIFIER
MICROSEMI

1N1203CR

Rectifier Diode, 1 Phase, 1 Element, 25A, 300V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
MICROSEMI

1N1203CRE3

Rectifier Diode, 1 Phase, 1 Element, 25A, 300V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
MICROSEMI