1N3612GP/60

更新时间:2024-09-18 17:43:14
品牌:VISHAY
描述:Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N3612GP/60 概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 整流二极管

1N3612GP/60 规格参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-41包装说明:PLASTIC, DO-41, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.38其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N3612GP/60 数据手册

通过下载1N3612GP/60数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
1N3611GP thru 1N3614GP and 1N3957GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
®
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
200 V to 1000 V  
30 A  
1.0 µA  
*
VF  
1.0 V  
d
e
t
n
e
Tj max.  
175 °C  
t
a
P
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
DO-204AL (DO-41)  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, I less than 0.1 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP  
Unit  
V
* Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
* Maximum RMS voltage  
V
A
A
* Maximum DC blocking voltage  
1000  
* Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 75 °C  
IF(AV)  
* Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88502  
14-Sep-05  
www.vishay.com  
1
1N3611GP thru 1N3614GP and 1N3957GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
Test condition  
at 1.0 A  
Symbol 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP Unit  
VF  
1.0  
V
instantaneous forward  
voltage  
* Maximum DC reverse  
current at rated DC  
blocking voltage  
T
A = 25 °C  
IR  
1.0  
300  
µA  
TA = 150 °C  
Typical reverse  
recovery time  
at IF = 0.5 A, IR = 1.0 A,  
trr  
2.0  
8.0  
µs  
pF  
Irr = 0.25 A  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP Unit  
Typical thermal resistance (1)  
RθJA  
RθJL  
55  
25  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
30  
25  
20  
15  
10  
5.0  
60 Hz  
Resistive or  
Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
0.375" (9.5mm)  
Lead Length  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Number of Cycles at 60 Hz  
Ambient Temperature, °C  
Figure 1. Max. Forward Current Derating  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88502  
14-Sep-05  
1N3611GP thru 1N3614GP and 1N3957GP  
Vishay General Semiconductor  
20  
20  
10  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
10  
TJ = 25 °C  
1
Pulse Width = 300 µs  
1% Duty Cycle  
0.1  
0.01  
1
0.1  
1
10  
100  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10  
100  
10  
TJ = 100 °C  
1
0.1  
1
TJ = 25 °C  
0.01  
0.1  
0.01  
0
20  
40  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (sec.)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
0.026 (0.66)  
0.023 (0.58)  
NOTE: Lead diameter is  
for suffix “E” part numbers  
Document Number 88502  
14-Sep-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

1N3612GP/60 相关器件

型号 制造商 描述 价格 文档
1N3612GP/64 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/65 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/66 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/68 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/70 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/90 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/91 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/92 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GP/93 VISHAY Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 获取价格
1N3612GPE VISHAY 暂无描述 获取价格

1N3612GP/60 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6