1N4248/4 [VISHAY]
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N4248/4 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总6页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4245 to 1N4249
VISHAY
Vishay Semiconductors
Sinterglass Medium-Switching Junction Rectifier
Features
• High temperature metallurgically bonded con-
structed rectifiers
• 1.0 ampere operation at T
mal runaway
= 55 °C with no ther-
amb
• Typical I less than 0.1 µA
R
• Hermetically sealed package
• Capable of meeting environmental standards of
MIL-S-19500
• High temperature soldering guaranteed: 350 °C/
10 seconds, 0.375 " (9.5 mm) lead length, 5 lbs.
(2.3 kg) tension
17031
Mechanical Data
Case: JEDEC DO-204AP Solid glass body
Terminals: Solder plated axial leads, solderable per
Parts Table
Part
Type differentiation
MIL-STD-750, Method 2026
1N4245
VRRM = 200 V
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 560 mg
1N4246
1N4247
1N4248
1N4249
VRRM = 400 V
VRRM = 600 V
VRRM = 800 V
VRRM = 1000 V
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type Symbol
Value
200
Unit
V
Maximum repetitive peak reverse voltage
1N4245
1N4246
1N4247
1N4248
1N4249
1N4245
1N4246
1N4247
1N4248
1N4249
1N4245
1N4246
1N4247
1N4248
1N4249
VRRM
VRRM
VRRM
VRRM
VRRM
VRMS
VRMS
VRMS
VRMS
VRMS
VDC
400
600
800
1000
140
280
420
560
700
200
400
600
800
1000
1.0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
Maximum RMS voltage
Maximum DC blocking voltage
VDC
VDC
VDC
VDC
Maximum average forward rectified current
Peak forward surge current
0.375 " (9.5 mm) lead length at Tamb = 55 °C
IF(AV)
IFSM
8.3 ms single half sine-wave superimposed on
rated load (JEDEC Method)
50
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
1
1N4245 to 1N4249
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance 1)
Test condition
Sub type
Symbol
RθJA
Value
55
Unit
°C/W
Operating junction temperature
range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
IR(AV)
- 65 to + 200
50
°C
Maximum full load reverse current full cycle average 0.375 " (9.5 mm)
lead length at Tamb = 55 °C
µA
1) Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between
heat sinks.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type Symbol
VF
Min
Typ.
Max
1.2
Unit
V
Maximum instantaneous forward
voltage
IF = 1.0 A
Maximum DC reverse current
at rated DC blocking voltage Tamb
= 25 °C
IR
IR
1.5
25
µA
µA
pF
at rated DC blocking voltage Tamb
= 125 °C
Typical junction capacitance
VR = 4 V, f = 1 MHz
CJ
15
Typical Characteristics (T
= 25°C unless otherwise specified)
amb
50
1.0
TJ = TJmax
8.3ms Single Half Sine-Wave
(JEDEC Method)
60HZ Resistive or
Inductive Load
0.8
40
30
20
10
0.6
0.4
0.2
0.375" (9.5mm)
Lead Length
0
0
1
1
0
100
0
25
50
75
100
125
150
175
Ambient Temperature (°C)
g1n4245_02
Number of Cycles at 60H
Z
g1n4245_01
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
2
1N4245 to 1N4249
VISHAY
Vishay Semiconductors
10
TJ = 150°C
Pulse Width = 300µs
1% Duty Cycle
1
TJ = 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
g1n4245_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
TJ = 150°C
1
TJ = 100°C
0.1
TJ = 25°C
0.01
0
20
40
60
80
100
g1n4245_04
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
30
10
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
1
1
1
0
100
Reverse Voltage (V)
g1n4245_05
Figure 5. Typical Junction Capacitance
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
3
1N4245 to 1N4249
Vishay Semiconductors
VISHAY
Package Dimensions in mm
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
17030
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
4
1N4245 to 1N4249
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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