1N4707TAP [VISHAY]
Zener Diode, 20V V(Z), 5%, 0.5W,;
| 型号： | 1N4707TAP |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 20V V(Z), 5%, 0.5W, |
| 文件： | 总7页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4678 to 1N4717
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Zener voltage specified at 50 µA
• Maximum delta V given from
Z
e2
10 µA to 100 µA
• Very high stability
• Low noise
• Lead (Pb)-free component
94 9367
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Voltage stabilization
Mechanical Data
Case: DO-35 Glass case
Weight: approx. 125 mg
Packaging codes/options:
TR / 10 k per 13 " reel, 30 k/box
TAP / 10 k per Ammo tape (52 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
Test condition
Symbol
Ptot
Value
500
Unit
mW
l = 4 mm
IZ
Ptot/VZ
mA
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Tj
Value
175
Unit
°C
Junction temperature
Storage temperature range
Tstg
- 65 to + 175
300
°C
Junction ambient
l = 4 mm, TL = constant
RthJA
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 100 mA
Symbol
VF
Min
Typ.
Max
1.5
Unit
V
Forward voltage
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
1
1N4678 to 1N4717
Vishay Semiconductors
Electrical Characteristics
Partnumber 1)
Zener Voltage
Max.Reverse
Current
Test Voltage
Max. Zener
Current
Max. Voltage
Change
3)
3)
2)
4)
VZ @ IZ = 50 µA
IR
VR
IZM
∆VZ
V
µA
V
mA
V
typ. 1)
min.
max
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
1.8
2
1.71
1.9
1.89
2.1
7.5
5
1
1
120
110
100
95
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.5
2.2
2.4
2.7
3
2.09
2.31
4
1
2.28
2.52
2
1
2.565
2.85
2.835
3.15
1
1
90
0.8
7.5
7.5
5
1
85
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
3.135
3.42
3.465
3.78
1.5
2
80
75
3.705
4.085
4.465
4.845
5.32
4.095
4.515
4.935
5.355
5.88
2
70
4
2
65
10
3
60
10
3
55
10
4
50
5.89
6.51
10
5
45
6.46
7.14
10
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
35
7.125
7.79
7.875
8.61
10
31.8
29
1
8.265
8.645
9.5
9.135
9.555
10.5
1
27.4
26.2
24.8
21.6
20.4
19
0.1
1
0.08
0.1
1
10.45
11.4
11.55
12.6
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
12.35
13.3
13.65
14.7
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
14.25
15.2
15.75
16.8
16.15
17.1
17.85
18.9
18.05
19
19.95
21
20.9
23.1
0.22
0.24
0.25
0.27
0.28
0.3
22.8
25.2
23.75
25.65
26.6
26.25
28.35
29.4
20.4
21.2
22.8
25
28.5
31.5
31.35
34.2
34.65
37.8
0.33
0.36
0.39
0.43
27.3
29.6
32.6
37.05
40.85
40.95
45.15
1) Toleranzing and voltage designation (VZ). The type numbers shown have a standard tolerance of 5 ꢀ on the nominal zener voltage.
2) Maximum zener current ratings (IZM). Maximum zener current ratings are based on maximum zener voltage of the individual units.
3) Reverse leakage current (IR). Reverse leakage currents are guaranteed and measured at VR as shown on the table.
4) Maximum voltage change ( VZ). Voltage change is equal to the difference between VZ at 100 µA and VZ at 10 µA.
www.vishay.com
2
Document Number 85586
Rev. 1.4, 18-Feb-05
1N4678 to 1N4717
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
600
500
15
10
400
300
200
5
I =5mA
Z
0
100
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
T
amb
– Ambient Temperature(°C )
V – Z-Voltage ( V )
Z
95 9602
95 9600
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
200
150
T =25°C
j
100
10
1
V =2V
R
T =25°C
j
100
I =5mA
Z
50
0
25
25
0
5
10
15
20
0
5
10
V – Z-Voltage ( V )
Z
15
20
V
– Z-Voltage ( V )
95 9598
95 9601
Z
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 5. Diode Capacitance vs. Z-Voltage
1.3
100
10
1
V
=V /V (25°C)
Zt Z
Ztn
1.2
1.1
–4
TK =10 x 10 /K
VZ
–4
8 x 10 /K
T =25°C
j
–4
6 x 10 /K
–4
4 x 10 /K
–4
2 x 10 /K
0
1.0
0.9
0.8
0.1
0.01
–4
–2 x 10 /K
–4
–4 x 10 /K
0.001
240
1.0
–60
0
60
120
180
0
0.2
0.4
0.6
0.8
T – Junction Temperature (°C )
j
V – Forward Voltage ( V )
F
95 9599
95 9605
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
3
1N4678 to 1N4717
Vishay Semiconductors
100
80
1000
100
10
I =1mA
Z
P
T
=500mW
=25°C
amb
tot
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
V
– Z-Voltage ( V )
V – Z-Voltage ( V )
Z
95 9604
95 9606
Z
Figure 7. Z-Current vs. Z-Voltage
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
40
30
P
T
=500mW
=25°C
amb
tot
20
10
0
35
15
20
25
30
V
– Z-Voltage ( V )
95 9607
Z
Figure 8. Z-Current vs. Z-Voltage
1000
t /T=0.5
p
100
10
1
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
t /T=0.05
2
1/2
p
x
i
=(–V +(V +4r
T/Z
)
thp
)/(2r )
zj
ZM
Z
Z
zj
–1
0
1
2
10
10
10
10
95 9603
t
p
– Pulse Length ( ms )
Figure 10. Thermal Response
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4
Document Number 85586
Rev. 1.4, 18-Feb-05
1N4678 to 1N4717
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode Identification
∅ 0.55 (0.02) max.
ISO Method E
∅ 2.0 (0.08) max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 (1.02) min.
3.9 (0.15) max.
26 (1.02) min.
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
5
1N4678 to 1N4717
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 85586
Rev. 1.4, 18-Feb-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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