1N4737A 概述
Silicon Power Z-Diodes 广颖电通Z-二极管
1N4737A 数据手册
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PDF下载1N4728A...1N4761A
Vishay Telefunken
Silicon Power Z–Diodes
Features
Very sharp reverse characteristic
Very high stability
Low reverse current level
V –tolerance ± 5%
Z
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
50 C
Type
Symbol
Value
1
Unit
W
mA
C
T
amb
P
V
I
Z
P /V
V
Z
T
200
–65...+200
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T =constant
Symbol
R
thJA
Value
100
Unit
K/W
L
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.2
V
F
V
F
Document Number 85587
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
1N4728A...1N4761A
Vishay Telefunken
1)
Type
V
Znom
I
ZT
for
r
zjT
r
at
I
ZK
I
R
at
V
R
zjk
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
3.3
76
< 10
< 10
< 9
< 9
< 8
< 7
< 5
< 2
< 3.5
< 4.0
< 4.5
< 5.0
< 7
< 400
< 400
< 400
< 400
< 500
< 550
< 600
< 700
< 700
< 700
< 700
< 700
< 700
< 700
< 700
< 100
< 700
< 700
< 750
< 750
< 750
< 750
< 750
< 1000
< 1000
< 1000
< 1000
< 1500
< 1500
< 1500
< 2000
< 2000
< 2000
< 2000
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
< 100
< 100
< 50
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
< 5
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
0.5
0.5
0.5
0.25
0.25
0.25
0,25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
< 8
< 9
< 10
< 14
< 16
< 20
< 22
< 23
< 25
< 35
< 40
< 45
< 50
< 60
< 70
< 80
< 95
< 110
< 125
< 150
< 175
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
1)
Based on dc–measurement at thermal equilibrium while maintaining the
lead temperature (T ) at 30 C + 1 C, 9.5mm (3/8”) from the diode body.
L
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85587
Rev. 2, 01-Apr-99
1N4728A...1N4761A
Vishay Telefunken
Dimensions in mm
Cathode Identification
94 9368
0.85 max.
technical drawings
according to DIN
specifications
2.5 max.
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3g
26 min.
4.1 max.
26 min.
Document Number 85587
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
1N4728A...1N4761A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85587
Rev. 2, 01-Apr-99
1N4737A 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
1N4737A,113 | NXP | 1N4728A to 1N4749A - Voltage regulator diodes DO-4 2-Pin | 功能相似 | |
1N4737ATR | ONSEMI | Zener 1W 5% | 功能相似 | |
1N4737A | ONSEMI | Zener 1W 5% | 功能相似 |
1N4737A 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
1N4737A(DO41)E3 | MICROSEMI | Zener Diode, 7.5V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN | 获取价格 | |
1N4737A,113 | NXP | 1N4728A to 1N4749A - Voltage regulator diodes DO-4 2-Pin | 获取价格 | |
1N4737A,133 | NXP | 1N4728A to 1N4749A - Voltage regulator diodes DO-4 2-Pin | 获取价格 | |
1N4737A-13 | DIODES | Zener Diode, 7.5V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41 | 获取价格 | |
1N4737A-A | PANJIT | 1.0W ZENER DIODE | 获取价格 | |
1N4737A-A | MCC | Zener Diode, | 获取价格 | |
1N4737A-AP | MCC | 暂无描述 | 获取价格 | |
1N4737A-B | DIODES | Zener Diode, 7.5V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, GLASS PACKAGE-2 | 获取价格 | |
1N4737A-B | RECTRON | 暂无描述 | 获取价格 | |
1N4737A-B | MCC | Zener Diode, | 获取价格 |
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