1N4764A [VISHAY]
Zener Diodes; 齐纳二极管型号: | 1N4764A |
厂家: | VISHAY |
描述: | Zener Diodes |
文件: | 总5页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N4728A to 1N4764A
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• For use in stabilizing and clipping circuits
with high power rating
e2
• Standard Zener voltage tolerance is 5 %
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17173
Applications
• Voltage stabilization
Mechanical Data
Case: DO-41 Glass case
Weight: approx. 310 mg
Packaging Codes/Options:
TR / 5 k per 13" reel, 25 k/box
TAP / 5 k per Ammo pack (52 mm tape), 25 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
Test condition
Symbol
Ptot
Value
1.31)
Unit
W
IZ
PV/VZ
mA
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
Unit
1101)
175
Thermal resistance juntion to ambient air
K/W
°C
Junction temperature
Tj
Storage temperature range
Tstg
- 65 to + 175
°C
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
IF = 200 mA
Symbol
VF
Min
Typ.
Max
1.2
Unit
V
Document Number 85816
Rev. 1.8, 22-Feb-06
www.vishay.com
1
1N4728A to 1N4764A
Vishay Semiconductors
Electrical Characteristics
1N4728A...1N4764A
Partnumber Nominal
Zener
Test
Current
Maximum Dynamic Impedance
Maximum Reverse
Leakage Current
Surge
Current3)
Maximum
Regulator
Current2)
Voltage1)
VZ at IZT
IZT
ZZT at IZT
ZZK at IZK
IZK
IR
Test
Voltage VR
at TA = 25 °C
IR
IZM
V
mA
76
Ω
10
10
9
Ω
mA
1
µA
100
100
50
10
10
10
10
10
10
10
10
10
10
5
V
1
mA
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
mA
276
252
234
217
193
178
162
146
133
121
110
100
91
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
400
69
400
1
1
64
400
1
1
58
9
400
1
1
53
8
500
1
1
49
7
550
1
1
45
5
600
1
2
41
2
700
1
3
37
3.5
4
700
1
4
34
700
0.5
5
31
4.5
5
700
0.5
6
28
700
0.5
7
25
7
700
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
23
8
700
83
21
9
700
5
76
19
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
700
5
69
17
700
5
61
15.5
14
700
5
57
750
5
50
12.5
11.5
10.5
9.5
8.5
7.5
7
750
5
45
750
5
41
750
5
38
750
5
34
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
5
30
5
27
5
25
6.5
6
5
23
5
22
5.5
5
5
19
5
90
18
4.5
4
5
80
16
5
70
14
3.7
3.3
3.0
2.8
2.5
5
65
13
5
60
12
5
62.2
69.2
76.0
55
11
5
50
10
5
45
9
1) Based on dc-measurement at thermal equilibrium while maintaining the lead temperature (TL) at 30 °C + 1 °C, 9.5 mm (3/8") from the
diode body.
2) Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature.
3) TP = 10 ms.
www.vishay.com
2
Document Number 85816
Rev. 1.8, 22-Feb-06
1N4728A to 1N4764A
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
W 1.0
0.8
P
tot
0.6
0.4
0.2
0
100
200 °C
18481
T
amb
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Package Dimensions in mm (Inches)
Cathode Identification
94 9368
∅
0.86 (0.03) max.
ISO Method E
2.6
∅
(0.10) max.
StandardGlass Case
54 B 2 DIN 41880
JEDEC DO 41
26 (1.02) min.
4.1 (0.16) max.
26 (1.02) min.
Document Number 85816
Rev. 1.8, 22-Feb-06
www.vishay.com
3
1N4728A to 1N4764A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85816
Rev. 1.8, 22-Feb-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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