1N4935GPE/90 [VISHAY]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | 1N4935GPE/90 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 二极管 |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4933GP thru 1N4937GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 50 to 600V
Forward Current 1.0A
DO-204AL (DO-41)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• Capable of meeting environmental standards of
MIL-S-19500
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
• Cavity-free glass passivated junction
• 1.0 Ampere operation at TA=75°C with no thernal runaway
• Typical IR less than 0.1µA
0.205 (5.2)
0.160 (4.1)
• High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Dimensions in inches
and (millimeters)
®
1.0 (25.4)
MIN.
Mechanical Data
0.034 (0.86)
Case: JEDEC DO-204AL, molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
0.028 (0.71)
DIA.
0.026 (0.66)
0.023 (0.58)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 oz., 0.34 g
NOTE: Lead diameter is
for suffix "E" part numbers
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol 1N4933GP 1N4934GP 1N4935GP 1N4936GP 1N4937GP Unit
*Maximum repetitive peak reverse voltage
*Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
145
200
400
280
400
600
420
600
V
V
V
*Maximum DC blocking voltage
100
*Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=75°C
IF(AV)
1.0
A
*Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Typical thermal resistance (1)
RΘJA
55
°C/W
°C
*Operating junction and storage temperature range
TJ, TSTG
-65 to +175
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
*Maximum instantaneous forward voltage at 1.0A
VF
1.2
V
*Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
5.0
100
IR
µA
*Maximum reverse recovery time at
IF=1.0A, VR=30V
trr
200
15
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
pF
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
Document Number 88509
27-Feb-02
www.vishay.com
1
1N4933GP thru 1N4937GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 — Forward Current
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
Derating Curves
40
1.0
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Resistive or
Inductive Load
0.75
0.5
30
20
10
0.25
0.375" (9.5mm) Lead Length
0
0
0
25
50
75
100
125
150
175
100
10
1
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 — Typical Instantaneous
Forward Characteristics
Fig. 4 — Typical Reverse
Characteristics
20
10
10
1
TJ = 125°C
TJ = 75°C
TJ = 25°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.1
0.01
0.01
0
20
40
60
80
100
1.0
0.6
0.8
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 — Typical Transient
Thermal Impedance
Fig. 5 — Typical Junction Capacitance
100
10
1
100
10
T = 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
1
0.1
0.01
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88509
27-Feb-02
相关型号：
1N4935GPE/91
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
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