1N5392-E3
更新时间:2024-09-19 01:01:08
品牌:VISHAY
描述:DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Rectifier Diode
1N5392-E3 概述
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Rectifier Diode
1N5392-E3 数据手册
通过下载1N5392-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N5391 thru 1N5399
Vishay General Semiconductor
General Purpose Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
1.5 A
50 V to 1000 V
50 A
1.4 V
IR
5.0 μA
DO-204AL (DO-41)
Tj max.
150 °C
Features
Mechanical Data
• Low forward voltage drop
Case: DO-204AL, molded epoxy body
• Low leakage current
Epoxy meets UL-94V-0 Flammability rating
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Terminals: Matte tin plated (E3 Suffix) leads,
solderable per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit
Maximum repetitive peak reverse
voltage
VRRM
50
100
200
300
400
500
600
800
1000
V
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
210
300
280
400
1.5
350
500
420
600
560
800
700
V
V
A
Maximum DC blocking voltage
100
1000
Maximum average forward
rectified current 0.500" (12.7 mm)
lead length at TL = 70 °C
IF(AV)
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length at TL = 70 °C
IR(AV)
300
µA
Operation junction and storage
temperature range
TJ,TSTG
- 50 to + 150
°C
Document Number 88514
20-Oct-05
www.vishay.com
1
1N5391 thru 1N5399
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Max.
instantaneous
forward voltage
Test condition Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit
at 1.5 A,
TA = 70 °C
VF
1.4
V
Maximum DC
reverse current at
rated DC blocking
voltage
TJ = 25 °C
IR
5.0
300
µA
TJ = 150 °C
Typical reverse
recovery time
at IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
2.0
15
µs
pF
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit
Typical thermal resistance(1)
RθJA
RθJL
55
25
°C/W
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
50
40
30
20
10
0
2.0
1.5
TA = 75 °C
8.3 ms Single Half Sine-Wave
1.0
0.5
0
1
10
100
0
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88514
20-Oct-05
2
1N5391 thru 1N5399
Vishay General Semiconductor
80
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
TJ = 150 °C
100
10
10
1
1
TJ = 25 °C
0.1
0.01
0.1
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88514
20-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
1N5392-E3 相关器件
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1N5392-T3 | SENSITRON | Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2 | 获取价格 | |
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1N5392-TB-LF | WTE | Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2 | 获取价格 | |
1N5392/100 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
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