1N5396E3 [VISHAY]
DIODE 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Rectifier Diode;型号: | 1N5396E3 |
厂家: | VISHAY |
描述: | DIODE 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Rectifier Diode |
文件: | 总3页 (文件大小:282K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5391 thru 1N5399
Vishay Semiconductors
General Purpose Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
1.5 A
50 V to 1000 V
25 A
1.4 V
IR
5.0 μA
DO-204AL (DO-41)
Tj max.
150 °C
Features
Mechanical Data
• Low forward voltage drop
Case: DO-204AL, molded epoxy body
• Low leakage current
Epoxy meets UL-94V-0 Flammability rating
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Terminals: Matte tin plated (E3 Suffix) leads,
solderable per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit
Maximum repetitive peak reverse
voltage
VRRM
50
100
200
300
400
500
600
800
1000
V
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
210
300
280
400
1.5
350
500
420
600
560
800
700
V
V
A
Maximum DC blocking voltage
100
1000
Maximum average forward
rectified current 0.500" (12.7 mm)
lead length at TL = 70 °C
IF(AV)
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length at TL = 70 °C
IR(AV)
300
µA
Operation junction and storage
temperature range
TJ,TSTG
TA
- 50 to + 150
+ 150
°C
°C
Maximum DC blocking
temperature
Document Number 88514
25-Aug-05
www.vishay.com
1
1N5391 thru 1N5399
Vishay Semiconductors
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Max.
instantaneous
forward voltage
Test condition Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit
at 1.5 A,
TA = 70 °C
VF
1.4
V
Maximum DC
reverse current at
rated DC blocking
voltage
TJ = 25 °C
IR
5.0
300
µA
TJ = 150 °C
Typical reverse
recovery time
at IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
2.0
15
µs
pF
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit
Typical thermal resistance(1)
RθJA
RθJL
55
25
°C/W
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
50
40
30
20
10
0
2.0
1.5
TA = 75 °C
8.3 ms Single Half Sine-Wave
1.0
0.5
0
1
10
100
0
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88514
25-Aug-05
2
1N5391 thru 1N5399
Vishay Semiconductors
80
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
TJ = 150 °C
100
10
10
1
1
TJ = 25 °C
0.1
0.01
0.1
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88514
25-Aug-05
www.vishay.com
3
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