1N5618GP/62-E3
更新时间:2024-11-09 04:10:38
品牌:VISHAY
描述:DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5618GP/62-E3 概述
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5618GP/62-E3 数据手册
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PDF下载1N5614GP thru 1N5622GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
®
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1.0 A
200 V to 1000 V
50 A
0.5 µA
*
VF
1.2 V
d
e
t
n
e
Tj max.
175 °C
t
a
P
DO-204AC (DO-15)
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Features
Mechanical Data
• Superectifier structure for High Reliability
application
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Cavity-free glass-passivated junction
• Low forward voltage drop
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current, I less than 0.1 µA
R
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP Unit
* Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
1.0
800
560
800
1000
700
V
V
V
A
Maximum RMS voltage
* Maximum DC blocking voltage
1000
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV)
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
* Operating junction temperature range
* Storage temperature range
TJ
- 65 to + 175
- 65 to + 175
°C
C
TSTG
Document Number 88520
14-Oct-05
www.vishay.com
1
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
at 50 µA
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
Unit
V
* Minimum reverse
breakdown voltage
VBR
VF
IR
220
440
660
880
1100
* Maximum instantaneous at 1.0 A
forward voltage
1.2
V
* Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
0.5
25
µA
TA =100°C
* Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
25
µs
pF
Maximum junction
capacitance
at 12 V, 1 MHz
CJ
45
35
20
15
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Notes:
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N522GP
RθJA 45
Unit
°C/W
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
*JEDEC registered values
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.0
0.75
0.5
50
40
30
60 Hz
Resistive or
Inductive Load
TJ = TJ max.
8.3 ms Single Half Sine-Wave
20
10
0.25
0
0.375” (9.5 mm) Lead Length
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature, °C
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88520
14-Oct-05
1N5614GP thru 1N5622GP
Vishay General Semiconductor
10
1
30
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 150 °C
10
TJ = 25 °C
0.1
0.01
Pulse Width = 300 µs
1% Duty Cycle
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20
40
80
100
60
Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88520
14-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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