1N5622/4 [VISHAY]
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N5622/4 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总5页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5614 to 1N5622
VISHAY
Vishay Semiconductors
Sinterglass Medium-Switching Junction Rectifier
Features
• High temperature metallurgically bonded con-
structed rectifiers
• 1.0 ampere operation at T
mal runaway
= 55 °C with no ther-
amb
• Typical I less than 0.1 µA
R
• Hermetically sealed package
• Capable of meeting environmental standards of
MIL-S-19500
• High temperature soldering guaranteed: 350 °C/
10 seconds, 0.375 " (9.5 mm) lead length, 5 lbs.
(2.3 kg) tension
17031
Mechanical Data
Case: JEDEC DO-204AP Solid glass body
Terminals: Solder plated axial leads, solderable per
Parts Table
Part
Type differentiation
MIL-STD-750, Method 2026
1N5614
VRRM = 200 V
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 560 mg
1N5616
1N5618
1N5620
1N5622
VRRM = 400 V
VRRM = 600 V
VRRM = 800 V
VRRM = 1000 V
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type Symbol
Value
200
Unit
V
Maximum repetitive peak reverse voltage
1N5614
1N5616
1N5618
1N5620
1N5622
1N5614
1N5616
1N5618
1N5620
1N5622
1N5614
1N5616
1N5618
1N5620
1N5622
VRRM
VRRM
VRRM
VRRM
VRRM
VRMS
VRMS
VRMS
VRMS
VRMS
VDC
400
600
800
1000
140
280
420
560
700
200
400
600
800
1000
1.0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
Maximum RMS voltage
Maximum DC blocking voltage
VDC
VDC
VDC
VDC
Maximum average forward rectified current
Peak forward surge current
0.375 " (9.5 mm) lead length at Tamb = 55 °C
IF(AV)
IFSM
8.3 ms single half sine-wave superimposed on
rated load (JEDEC Method)
50
Document Number 86088
Rev. 1, 12-Nov-02
www.vishay.com
1
1N5614 to 1N5622
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance 1)
Test condition
Sub type
Symbol
RθJA
Value
55
Unit
°C/W
Operating junction temperature
range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 200
°C
1) Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between
heat sinks.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type Symbol
Min
220
Typ.
Max
Unit
V
Minimum reverse breakdown
voltage
IR = 50 µA
1N5614
V(BR)
IR = 50 µA
IR = 50 µA
IR = 50 µA
IR = 50 µA
IF = 1.0 A
1N5616
1N5618
1N5620
1N5622
V(BR)
V(BR)
V(BR)
V(BR)
VF
440
660
V
V
V
V
V
880
1100
Maximum instantaneous forward
voltage
1.2
0.5
Maximum DC reverse current
at rated DC blocking voltage Tamb
= 25 °C
IR
IR
IR
µA
µA
µA
at rated DC blocking voltage Tamb
= 100 °C
25
at rated DC blocking voltage Tamb
= 200 °C
1500
Maximum junction capacitance
Maximum reverse recovery time
VR = 12 V, f = 1 MHz
1N5614
1N5616
1N5618
1N5620
1N5622
CJ
CJ
CJ
CJ
CJ
trr
45
35
25
20
15
2.0
pF
pF
pF
pF
pF
µs
VR = 12 V, f = 1 MHz
VR = 12 V, f = 1 MHz
VR = 12 V, f = 1 MHz
VR = 12 V, f = 1 MHz
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Characteristics (T
= 25°C unless otherwise specified)
amb
1.0
50
60 Hz Resistive
or Inductive Load
0.375" (9.5mm)
Lead length
T
= T max.
J
J
8.3ms Single Half Sine-Wave
(JEDEC method)
40
30
20
10
0.75
0.5
0.25
0
0
25
50
100
Ambient Temperature (°C)
150
75
125
175
1
100
10
g1n5614_02
g1n5614_01
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Document Number 86088
Rev. 1, 12-Nov-02
www.vishay.com
2
1N5614 to 1N5622
VISHAY
Vishay Semiconductors
10
1
T
J
= 150°C
T
J
= 25°C
0.1
Pulse Width = 300∝s
1% Duty Cycle
0.01
0.4
1.2
0.6
0.8
1.0
1.4
1.6
g1n5614_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
T
J
= 125°C
1
0.1
T
= 75°C
= 25°C
J
T
J
0.01
0
20
Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
40
80
100
60
g1n5614_04
30
T
= 25°C
J
f = 1.0 MHz
Vsig = 50m Vp-p
10
1
1
10
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
g1n5614_05
Document Number 86088
Rev. 1, 12-Nov-02
www.vishay.com
3
1N5614 to 1N5622
Vishay Semiconductors
VISHAY
Package Dimensions in mm
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
17030
Document Number 86088
Rev. 1, 12-Nov-02
www.vishay.com
4
1N5614 to 1N5622
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86088
Rev. 1, 12-Nov-02
www.vishay.com
5
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