1N5625GP-E3/51 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;


型号：	1N5625GP-E3/51
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
文件：	总4页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5624GP thru 1N5627GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for High Reliability

application

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

DO-201AD

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly by

Patent No. 3,930,306

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power

supplies, inverters, converters and freewheeling

diodes application.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

I_R

3.0 A

200 V to 800 V

125 A

MECHANICAL DATA

Case: DO-201AD, molded epoxy over glass body

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

5.0 µA

V_F

0.95 V

T_jmax.

175 °C

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

1N5624GP

1N5625GP

400

1N5626GP

600

1N5627GP

800

UNIT

* Maximum repetitive peak reverse voltage

* Maximum DC blocking voltage

V_RRM

200

V_DC

200

400

600

800

* Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 70 °C

I_F(AV)

3.0

125

200

* Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

Maximum full load reverse current, full cycle average

0.375" (9.5 mm) lead length at T_A= 70 °C

I_R(AV)

µA

°C

* Operating junction and storage temperature range

* JEDEC registered values

T_J, T_STG

- 65 to + 175

Document Number 88524

23-May-06

www.vishay.com

1N5624GP thru 1N5627GP

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP

UNIT

* Maximum instantaneous

forward voltage ⁽¹⁾

T_A= 25 °C

T_A= 70 °C

1.0

0.95

at 3.0 A

V_F

_A= 25 °C

5.0

Maximum DC reverse current

at rated DC blocking voltage

I_R

µA

T_A= 150 °C

300

200

at I_F= 0.5 A, I_R= 1.0 A,

Typical reverse recovery time

Typical junction capacitance

t_rr

3.0

µs

_rr= 0.25 A

at 4.0 V, 1 MHz

C_J

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

* JEDEC registered values

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

1N5624GP 1N5625GP 1N5626GP 1N5627GP

UNIT

Typical thermal resistance ⁽¹⁾

R_θJA

°C/W

Note:

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

ORDERING INFORMATION

PREFERRED P/N

1N5626GP-E3/54

1N5626GP-E3/73

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

1.28

1400

1000

13" Diameter Paper Tape & Reel

Ammo Pack Packaging

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

200

100

4.0

TJ = TJ max.

8.3 ms Single Half Sine-Wave

60 Hz

Resistive or

Inductive Load

3.0

2.0

1.0

0.375" (9.5 mm) Lead Length

100

125

150

175

100

Ambient Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88524

23-May-06

1N5624GP thru 1N5627GP

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

V^sig= 50 mVp-p

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.1

0.6

100

0.7

0.8

0.9

1.0

1.1

1.2

1.3

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

TJ = 125 °C

T^J= 75 °C

0.1

T^J= 25 °C

0.01

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-201AD

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.052 (1.32)

0.048 (1.22)

DIA.

Document Number 88524

23-May-06

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

1N5625GP-E3/51 [VISHAY]

相关型号：

1N5625GP-E3/73

1N5625GP-HE3/54

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1N5625GP/51

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1N5625GP/54

1N5625GP/68

1N5625GP/70-E3

1N5625GP/72-E3

1N5625GP/90

1N5625GPHE3/54